Suchergebnisse für "FL024N" : 19

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IRFL024NPBF IRFL024NPBF
Produktcode: 88893
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IR irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description Transistoren > MOSFET N-CH
Uds,V: 55 V
Idd,A: 2,8 A
Rds(on), Ohm: 0,075 Ohm
Ciss, pF/Qg, nC: 400/18,3
JHGF: SMD
auf Bestellung 153 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NPBF International Rectifier/Infineon irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description N-канальний ПТ; Udss, В = 55; Id = 2,8 A; Ptot, Вт = 1; Тип монт. = smd; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18,3 @ 10 В; Rds = 75 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; SOT-223
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+1.32 EUR
10+1.14 EUR
100+1.00 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTR International Rectifier irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae Transistor N-Channel MOSFET; 55V; 20V; 75mOhm; 4A; 2,1W; -55°C ~ 150°C; IRFL024N TIRFL024n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.88 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF International Rectifier/Infineon irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae N-канальний ПТ; Udss, В = 55; Id = 2,8 А; Ptot, Вт = 1; Тип монт. = smd; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18,3 @ 10 В; Rds = 75 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; SOT-223
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
6+1.21 EUR
10+1.04 EUR
100+0.92 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024N International Rectifier Corporation irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description MOSFET N-CH 55V 2.8A SOT-223
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NQ IR 07+ SOT-223
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NQ IR SOT-223
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024N IRFL024N
Produktcode: 45963
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irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AUIRFL024N AUIRFL024N Infineon Technologies auirfl024n.pdf?fileId=5546d462533600a4015355b151af1434 Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFL024NTR AUIRFL024NTR Infineon Technologies AUIRFL024N.pdf Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFL024N IRFL024N Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL024NPBF IRFL024NPBF Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL024NTR IRFL024NTR Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES irfl024npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies Infineon_IRFL024N_DataSheet_v01_01_EN-3363062.pdf MOSFETs MOSFT 55V 4A 75mOhm 12.2nC
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES irfl024npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NPBF
Produktcode: 88893
zu Favoriten hinzufügen Lieblingsprodukt

description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NPBF
Hersteller: IR
Transistoren > MOSFET N-CH
Uds,V: 55 V
Idd,A: 2,8 A
Rds(on), Ohm: 0,075 Ohm
Ciss, pF/Qg, nC: 400/18,3
JHGF: SMD
auf Bestellung 153 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NPBF description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
Hersteller: International Rectifier/Infineon
N-канальний ПТ; Udss, В = 55; Id = 2,8 A; Ptot, Вт = 1; Тип монт. = smd; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18,3 @ 10 В; Rds = 75 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; SOT-223
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+1.32 EUR
10+1.14 EUR
100+1.00 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTR irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 55V; 20V; 75mOhm; 4A; 2,1W; -55°C ~ 150°C; IRFL024N TIRFL024n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.88 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
Hersteller: International Rectifier/Infineon
N-канальний ПТ; Udss, В = 55; Id = 2,8 А; Ptot, Вт = 1; Тип монт. = smd; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18,3 @ 10 В; Rds = 75 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; SOT-223
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+1.21 EUR
10+1.04 EUR
100+0.92 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024N description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
Hersteller: International Rectifier Corporation
MOSFET N-CH 55V 2.8A SOT-223
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
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IRFL024NQ
Hersteller: IR
07+ SOT-223
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
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IRFL024NQ
Hersteller: IR
SOT-223
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024N
Produktcode: 45963
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description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024N
Produkt ist nicht verfügbar
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AUIRFL024N auirfl024n.pdf?fileId=5546d462533600a4015355b151af1434
AUIRFL024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFL024NTR AUIRFL024N.pdf
AUIRFL024NTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024N description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NPBF description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL024NTR irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL024NTRPBF irfl024npbf.pdf
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFL024NTRPBF irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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IRFL024NTRPBF Infineon_IRFL024N_DataSheet_v01_01_EN-3363062.pdf
IRFL024NTRPBF
Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 4A 75mOhm 12.2nC
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IRFL024NTRPBF irfl024npbf.pdf
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
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