Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Idd, A: 110 A
Durchlasswiderstand Rds(on), Ohm: 0,08 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4000/170
Montage: THT

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Idd, A: 110 A
Durchlasswiderstand Rds(on), Ohm: 0,008 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4000/170
Montage: THT

Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 55V; 20V; 8mOhm; 110A; 200W; -55°C ~ 175°C; Equivalent: IRFP064; IRFP064N; SP001554926; IRFP064N JSMICRO TIRFP064n JSM
Anzahl je Verpackung: 10 Stücke

Hersteller: International Rectifier
Transistor N-MOSFET; 55V; 20V; 8mOhm; 110A; 200W; -55°C ~ 175°C; Replacement: IRFP064N; IRFP064N; IRFP064N TIRFP064n
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
Transistor N-MOSFET; 55V; 20V; 8mOhm; 110A; 200W; -55°C ~ 175°C; Replacement: IRFP064N; IRFP064N; IRFP064N TIRFP064n
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
Transistor N-MOSFET; 55V; 20V; 8mOhm; 110A; 200W; -55°C ~ 175°C; Replacement: IRFP064N; IRFP064N; IRFP064N TIRFP064n
Anzahl je Verpackung: 25 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V

Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 98A 8mOhm 113.3nCAC

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: INFINEON
Description: INFINEON - IRFP064NPBF - Leistungs-MOSFET, n-Kanal, 55 V, 98 A, 8000 µohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: YES
Dauer-Drainstrom Id: 98A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 150W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 8000µohm

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: International Rectifier
Description: AUIRFP064 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101

Hersteller: International Rectifier
Транзистори

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 55, Id = 110 А, Ciss, пФ @ Uds, В = 4000 @ 25, Qg, нКл = 170 @ 10 В, Rds = 8 мОм @ 59 A, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 200, Тексп, °C = -55...+175, Тип монт. = Вивідний,... Транзистори Корпус: TO-247AC Од. вим: шт
Anzahl je Verpackung: 25 Stücke

Hersteller: IR
Транз. Пол. ВП N-HEXFET TO247AC Udss=60V; Id=70A; Pdmax=300W; Rds=0,009 Ohm   Транзистори польові

Hersteller: International Rectifier
MOSFET N-CH 55V 160A TO-247-3 Транзистори

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V

Hersteller: STM
(Близкий к IRFP064, замена IRFP064N, IRFP064V) Транзистори