Hersteller: ON
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220
Transitfrequenz fT: 14 MHz
Kollektor-Emitter-Spannung Uceo, V: 400 V
Kollektor-Basis-Spannung Ucbo, V: 700 V
Kollektorstrom Ic, A: 8 A
Stromverstärkung h21: 40
Montage: THT

Hersteller: JSMicro Semiconductor
Transistor NPN; 40; 80W; 400V; 8A; 4MHz; -65°C ~ 150°C; Equivalent: MJE13007G; MJE13007-BP; ST13007; PHE13007,127; FJP13007TU; MJE13007 JSMICRO TMJE13007 JSM
Anzahl je Verpackung: 25 Stücke

Hersteller: LGE
Transistor NPN; 40; 2W, 400V; 8A; 4MHz, -55°C ~ 150°C; Substitute: MJE13007G; MJE13007-BP; ST13007; PHE13007,127; FJP13007TU; MJE13007 LGE TMJE13007 lge
Anzahl je Verpackung: 50 Stücke

Hersteller: onsemi
Bipolar Transistors - BJT 8A 400V 80W NPN

Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ONSEMI
Description: ONSEMI - MJE13007G - Bipolarer Einzeltransistor (BJT), Universal, NPN, 400 V, 8 A, 80 W, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 4hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Verlustleistung: 80W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-220
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 400V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 14MHz
Betriebstemperatur, max.: 150°C

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: REALCHIP
Transistor NPN; 40; 2W; 400V; 5A; -55°C ~ 150°C; Equivalent: MJE13007; MJE13007G; ST13007; FJP13007TU; PHE13007,127; ST13007D; 13007 TO220 REALCHIP TMJE13007 REA
Anzahl je Verpackung: 50 Stücke

Hersteller: OTOMO
Transistor NPN; 40; 2W; 400V; 8A; 4MHz; -55°C ~ 150°C; Equivalent: MJE13007G; MJE13007-BP; ST13007; PHE13007,127; FJP13007TU; MJE13007 OTOMO TMJE13007 OTO
Anzahl je Verpackung: 50 Stücke

Hersteller: ST
NPN 8A 400V 80W 4MHz MJE13007G, ST13007, FJP13007TU, PHE13007,127, ST13007D MJE13007 TMJE13007
Anzahl je Verpackung: 50 Stücke

Hersteller: ST
NPN 8A 400V 80W 4MHz MJE13007G, ST13007, FJP13007TU, PHE13007,127, ST13007D MJE13007 TMJE13007
Anzahl je Verpackung: 50 Stücke

Hersteller: ST
NPN 8A 400V 80W 4MHz MJE13007G, ST13007, FJP13007TU, PHE13007,127, ST13007D MJE13007 TMJE13007
Anzahl je Verpackung: 50 Stücke

Hersteller: YFW
400V 2W 8A TO-220AB Bipolar (BJT) Substitute: MJE13007; ST13007; YFW13007AT TO220 YFW TMJE13007 YFW
Anzahl je Verpackung: 10 Stücke

Hersteller: YFW
400V 2W 8A TO-220AB Bipolar (BJT) Substitute: MJE13007; ST13007; YFW13007AT TO220 YFW TMJE13007 YFW
Anzahl je Verpackung: 10 Stücke

Transistoren > Bipolar-Transistoren NPN

Verschiedene Bauteile > Verschiedene Bauteile 2

Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W

Hersteller: onsemi
Bipolar Transistors - BJT 8A 400V 80W NPN

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W

Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube

Hersteller: On Semiconductor
NPN, Uкэ=400V, Iк=8A (16 имп.), h21=5...40, 4МГц (тип. 14МГц), 80Вт, TO-220AB Транзистори

Hersteller: STM
NPN, Uкэ=400V, Iк=8A (16 имп.), h21=6...40, 4МГц, 80Вт, TO-220AB Транзистори

Hersteller: ON Semiconductor
Транзистор NPN (Uce=400V/700V, Ic=8A, P=80W, B=8-40, -65 to +150C).... Транзистори Корпус: TO-220 Од. вим: шт
Anzahl je Verpackung: 50 Stücke

Hersteller: On Semiconductor
NPN, Uкэ=400V, Iк=8A (16 имп.), h21=5...40, 4МГц (тип. 14МГц), 80Вт, TO-220AB (аналог 2SC4106) Транзистори

Hersteller: On Semiconductor
NPN, Uкэ=400V, Iк=8A (16 имп.), h21=5...40, 4МГц (тип. 14МГц), 80Вт, TO-220AB Транзистори

Hersteller: ONS
Біполярний транзистор NPN, bipolar, 400V, 8A, 80W, TO220   Транзистори біполярні