Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 25 V
Drain-Strom Idd, A: 3,5 (2,3) A
Durchlasswiderstand Rds(on), Ohm: 0,1(0,25) Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 330/9,4
Bemerkung: Zwei Transistoren N+P in einem Gehäuse
Montage: SMD

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 25 В
Drain-Strom Idd, A: 2,3 А
Durchlasswiderstand Rds(on), Ohm: 0,25 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 330/9.4
Bemerkung: Zwei Transistoren N+P in einem Gehäuse
Montage: SMD

Hersteller: IOR
01+ SOP

Hersteller: HXY MOSFET
Transistor N/P-Channel MOSFET; 30V; 20V; 30mOhm/77mOhm; 6A/5,5A; 2W; -55°C ~ 150°C; Equivalent: IRF7105; IRF7105TR; SP001561994; SP001577206; IRF7105TR HXY MOSFET TIRF7105 HXY
Anzahl je Verpackung: 50 Stücke

Hersteller: JSMSEMI
Transistor N/P-Channel MOSFET; 30V; 20V; 36mOhm/58mOhm; 7,2A/6,8A; 2W; -55°C ~ 150°C; Equivalent: IRF7105; IRF7105TR; SP001561994; SP001577206; IRF7105TR JSMICRO TIRF7105 JSM
Anzahl je Verpackung: 25 Stücke

Hersteller: UMW
Transistor N/P-Channel MOSFET; 25V; 20V; 160mOhm/400mOhm; 3,5A/2,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7105; IRF7105TR; SP001561994; SP001577206; IRF7105TR UMW TIRF7105 UMW
Anzahl je Verpackung: 50 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®

Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active

Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active

Hersteller: Infineon Technologies
MOSFETs MOSFT DUAL N/PCh 25V 3.5A

Hersteller: UMW
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP

Hersteller: IRC
07+;

Hersteller: IR
08+;

IRF7105TRPBF Транзисторы HEXFET

Verschiedene Bauteile > Other components 3

Hersteller: Glenair
Circular MIL Spec Tools, Hardware & Accessories PROTECTIVE COVER

Hersteller: Glenair
Circular MIL Spec Tools, Hardware & Accessories PROTECTIVE COVER

Hersteller: IFM ELECTRONIC
Category: DC Cylindrical Inductive Sensors
Description: Sensor: inductive
Type of sensor: inductive

Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key

Hersteller: Amphenol Positronic
Description: PLB3W3F7105A1
Packaging: Bulk
Connector Type: Housing for Female Sockets
Color: Blue
Mounting Type: Free Hanging (In-Line)
Number of Positions: 3
Pitch: 0.540" (13.72mm)
Number of Rows: 2
Connector Usage: Receptacle
Connector Style: Backplane

Hersteller: Amphenol Positronic
Power to the Board Power Input Connector, 3 size 12 contacts, Socket (Female), Screw Termination

Hersteller: Amphenol Positronic
Description: PLB3W3F7105A1/AA
Features: Board Lock
Packaging: Bulk
Connector Type: Receptacle, Female Sockets
Contact Finish: Gold
Color: Blue
Mounting Type: Free Hanging (In-Line)
Number of Positions: 3
Pitch: 0.552" (14.02mm)
Number of Rows: 2
Number of Positions Loaded: All
Termination: Screw
Connector Usage: Daughtercard-to-Motherboard
Connector Style: Power
Contact Finish Thickness: FLASH
Number of Columns: 3

Hersteller: Amphenol Positronic
Power to the Board Power Input Connector, 3 size 12 contacts, Socket (Female), Screw Termination

Hersteller: ITT Cannon
Circular MIL Spec Connector

Hersteller: UMW
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP

Hersteller: Infineon
Транз. Пол. МП N&P-HEXFET logik SO8 Udss=(25; -25)V; Id=(3,5; -2,3)A; Pdmax=2W; Rds=(0,1; 0,25) Ohm Транзистори польові

Hersteller: Infineon
Транз. Пол. МП N&P-HEXFET logik SO8 Udss=(25; -25)V; Id=(3,5; -2,3)A; Pdmax=2W; Rds=(0,1; 0,25) Ohm Транзистори польові

Hersteller: International Rectifier/Infineon
Транзистор польовий N+P, Udss, В = 25, Id = 3,5 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 330 @ 15, Qg, нКл = 27 @ 10 В, Rds = 100 мОм @ 1 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА, Id2 = 2,3 А,... Транзистори Корпус: SOICN-8 О
Anzahl je Verpackung: 95 Stücke

Hersteller: International Rectifier/Infineon
Транзистор польовий N+P, Udss, В = 25, Id = 3,5 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 330 @ 15, Qg, нКл = 27 @ 10 В, Rds = 100 мОм @ 1 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА, Id2 = 2,3 A,... Транзистори Корпус: SOICN-8 О
Anzahl je Verpackung: 95 Stücke

Hersteller: International Rectifier/Infineon
Транзистор польовий N+P, Udss, В = 25, Id = 3,5 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 330 @ 15, Qg, нКл = 27 @ 10 В, Rds = 100 мОм @ 1 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА, I2 = 2,3 А,... Транзистори Корпус: SOICN-8 Од
Anzahl je Verpackung: 95 Stücke

Hersteller: International Rectifier
(HEXFET,DUAL,N+P-CH,LL,2W,25V,2A,SO-8) Транзистори

Hersteller: International Rectifier
(HEXFET,DUAL,N+P-CH,LL,2W,25V,2A,SO-8) Транзистори

Hersteller: Littelfuse Inc.
Description: SENSOR REED SW SPST-NC W LEADS
Packaging: Box
Package / Case: Barrel (Plastic Housed), Wire Leads
Output Type: SPST-NC
Type: Reed Switch
Operating Temperature: -40°C ~ 105°C
Termination Style: Wire Leads with Connector
Must Operate: 9.30mm
Actuator Material: Magnet
Part Status: Obsolete