Suchergebnisse für "f7309" : 32
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Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 20
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Im Einkaufswagen
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Mindestbestellmenge: 3000
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Mindestbestellmenge: 73
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 73
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Mindestbestellmenge: 4000
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Mindestbestellmenge: 9
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Mindestbestellmenge: 3
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Mindestbestellmenge: 8
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Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRF7309PBF Produktcode: 36562
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() Gehäuse: SO-8 Uds,V: 30 Idd,A: 4.7(3.5) Rds(on), Ohm: 0.05(0.1) Ciss, pF/Qg, nC: 520/25 Bem.: N+P JHGF: SMD |
auf Bestellung 230 Stück: Lieferzeit 21-28 Tag (e) |
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IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: SO-8 Uds,V: 30 Idd,A: 4 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 520/25 Bem.: P/N Kanal 2 in 1 JHGF: SMD ZCODE: 8541290010 |
verfügbar: 12 Stück
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F7309 | IOR | 01+ SOP |
auf Bestellung 232 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF7309 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7309PBF | IR |
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auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 3147 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3147 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 16547 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
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auf Bestellung 6432 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | International Rectifier/Infineon |
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auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309QTRPBF | IOR |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF7309TRPBF | International Rectifier Corporation |
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auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF7309TRPBF/IR | IR | 08+; |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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S6040RTP | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB-R Part Status: Active Current - On State (It (RMS)) (Max): 40 A Voltage - Off State: 600 V |
auf Bestellung 578 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309 Produktcode: 19215
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() Gehäuse: SO-8 Uds,V: 30 Idd,A: 4 Rds(on), Ohm: 01.05.2000 Bem.: N+P (3A) JHGF: SMD |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7309Q | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7309QTR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7309QTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7309PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7309QTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7309TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7309TR | UMW |
![]() Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
55PC0214-20-6CS2502 | TE Connectivity Raychem Cable Protection |
Description: 55PC0214-20-6CS2502 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
7309 BECBP SKF | SKF |
![]() Description: Bearing: single row deep groove ball; angular contact; W: 45mm Type of bearing: single row deep groove ball Version: angular contact Internal diameter: 45mm Outside diameter: 100mm Width: 45mm Rolling element material: bearing steel Cage material: polyamide Race material: bearing steel Kind of Bearing: rolling |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
7309 BECBP SKF | SKF |
![]() Description: Bearing: single row deep groove ball; angular contact; W: 45mm Type of bearing: single row deep groove ball Version: angular contact Internal diameter: 45mm Outside diameter: 100mm Width: 45mm Rolling element material: bearing steel Cage material: polyamide Race material: bearing steel Kind of Bearing: rolling Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRF7309PBF Produktcode: 36562
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
auf Bestellung 230 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
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1+ | 0.57 EUR |
10+ | 0.42 EUR |
IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
Anzahl | Preis |
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1+ | 0.35 EUR |
F7309 |
Hersteller: IOR
01+ SOP
01+ SOP
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF7309 | ![]() |
Hersteller: Infineon
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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20+ | 2.02 EUR |
IRF7309PBF | ![]() |
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Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1+ | 2.07 EUR |
10+ | 1.83 EUR |
100+ | 1.66 EUR |
IRF7309TR |
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Hersteller: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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3000+ | 0.43 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3147 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
85+ | 0.85 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
2000+ | 0.45 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3147 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
85+ | 0.85 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
2000+ | 0.45 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.52 EUR |
8000+ | 0.50 EUR |
12000+ | 0.48 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16547 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.16 EUR |
15+ | 1.21 EUR |
100+ | 0.88 EUR |
500+ | 0.70 EUR |
1000+ | 0.63 EUR |
2000+ | 0.58 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: Infineon Technologies
MOSFETs MOSFT DUAL N/PCh 30V 4.0A
MOSFETs MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 6432 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 1.36 EUR |
10+ | 1.04 EUR |
100+ | 0.80 EUR |
500+ | 0.69 EUR |
1000+ | 0.63 EUR |
2000+ | 0.58 EUR |
4000+ | 0.49 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 0.90 EUR |
10+ | 0.77 EUR |
100+ | 0.68 EUR |
IRF7309QTRPBF |
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Hersteller: IOR
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF7309TRPBF | ![]() |
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Hersteller: International Rectifier Corporation
(SO-8)
(SO-8)
auf Bestellung 4580 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF7309TRPBF/IR |
Hersteller: IR
08+;
08+;
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
S6040RTP |
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Hersteller: Littelfuse Inc.
Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.13 EUR |
50+ | 4.58 EUR |
100+ | 4.22 EUR |
500+ | 3.63 EUR |
IRF7309 Produktcode: 19215
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7309Q |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7309QTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7309QTR |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7309QTR |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7309PBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7309QTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7309TR |
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Hersteller: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7309TR |
![]() |
Hersteller: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7309QTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
7309 BECBP SKF |
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Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
7309 BECBP SKF |
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Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH