Suchergebnisse für "f7309" : 29

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IRF7309PBF IRF7309PBF
Produktcode: 36562
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IR irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
auf Bestellung 231 Stück:
Lieferzeit 21-28 Tag (e)
1+0.57 EUR
10+0.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309TRPBF (Transistoren Feld N-Kanal) IRF7309TRPBF (Transistoren Feld N-Kanal)
Produktcode: 45192
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IR irf7309pbf-1-datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
1+0.35 EUR
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F7309 IOR 01+ SOP
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
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IRF7309 Infineon description N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+1.91 EUR
Mindestbestellmenge: 15
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 50/100mΩ
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 50/100mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2465 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
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IRF7309TRPBF IRF7309TRPBF Infineon Technologies infineon-irf7309-datasheet-en.pdf description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 74980 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
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IRF7309TRPBF IRF7309TRPBF Infineon Technologies Infineon-IRF7309-DataSheet-v01_01-EN.pdf description MOSFETs MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 15931 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.71 EUR
10+1.14 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
4000+0.45 EUR
Mindestbestellmenge: 2
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IRF7309TRPBF IRF7309TRPBF Infineon Technologies infineon-irf7309-datasheet-en.pdf description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.46 EUR
8000+0.44 EUR
12000+0.43 EUR
Mindestbestellmenge: 4000
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UMWIRF7309TR UMWIRF7309TR UMW 5bdf270d5998f3d9041514c41a5d523f.pdf Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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Транзистор IRF7309PBF IR Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
1+1.86 EUR
10+1.65 EUR
100+1.48 EUR
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IRF7309QTRPBF IOR IRF7309QPBF.pdf
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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IRF7309TRPBF International Rectifier Corporation infineon-irf7309-datasheet-en.pdf description (SO-8)
auf Bestellung 4455 Stücke:
Lieferzeit 14-21 Tag (e)
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IRF7309TRPBF International Rectifier/Infineon infineon-irf7309-datasheet-en.pdf description Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
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IRF7309TRPBF/IR IR 08+;
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
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S6040RTP S6040RTP Littelfuse Inc. littelfuse_thyristor_sxx40x_datasheet.pdf?assetguid=3e6dc21e-4511-421f-834b-b78fdf51f5e3 Description: SCR 600V 40A TO-220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
50+4.03 EUR
100+3.68 EUR
500+3.25 EUR
Mindestbestellmenge: 3
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IRF7309 IRF7309
Produktcode: 19215
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IR IRF7309.pdf description Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
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F73090-000 TE Connectivity Multi-Conductor Cables 55PC0214-20-6CS2502 PRICE PER FOOT
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AUIRF7309Q AUIRF7309Q Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D741EF1A6F5005056AB5A8F&compId=auirf7309q.pdf?ci_sign=22ef9c2ac4bfdc45d4b48d901ef86cafc5fe8476 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 16.7nC
On-state resistance: 50/100mΩ
Produkt ist nicht verfügbar
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AUIRF7309QTR AUIRF7309QTR Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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AUIRF7309QTR AUIRF7309QTR Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRF7309PBF IRF7309PBF Infineon Technologies irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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UMWIRF7309TR UMWIRF7309TR UMW 5bdf270d5998f3d9041514c41a5d523f.pdf Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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55PC0214-20-6CS2502 TE Connectivity Raychem Cable Protection Description: 55PC0214-20-6CS2502
Packaging: Bulk
Produkt ist nicht verfügbar
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7309 BECBP SKF SKF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9E02371D33320D2&compId=7309_BECBP.pdf?ci_sign=dabb5c938717a66f51a2147786349edd66744f89 Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
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IRF7309PBF
Produktcode: 36562
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description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309PBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
auf Bestellung 231 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+0.57 EUR
10+0.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309TRPBF (Transistoren Feld N-Kanal)
Produktcode: 45192
zu Favoriten hinzufügen Lieblingsprodukt

irf7309pbf-1-datasheet.pdf
IRF7309TRPBF (Transistoren Feld N-Kanal)
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
Anzahl Preis
1+0.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F7309
Hersteller: IOR
01+ SOP
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309 description
Hersteller: Infineon
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+1.91 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309TRPBF description pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 50/100mΩ
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
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IRF7309TRPBF description pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 50/100mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2465 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309TRPBF description infineon-irf7309-datasheet-en.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 74980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
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IRF7309TRPBF description Infineon-IRF7309-DataSheet-v01_01-EN.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
MOSFETs MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 15931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.71 EUR
10+1.14 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
4000+0.45 EUR
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IRF7309TRPBF description infineon-irf7309-datasheet-en.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.46 EUR
8000+0.44 EUR
12000+0.43 EUR
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UMWIRF7309TR 5bdf270d5998f3d9041514c41a5d523f.pdf
UMWIRF7309TR
Hersteller: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
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Транзистор IRF7309PBF
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+1.86 EUR
10+1.65 EUR
100+1.48 EUR
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IRF7309QTRPBF IRF7309QPBF.pdf
Hersteller: IOR
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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IRF7309TRPBF description infineon-irf7309-datasheet-en.pdf
auf Bestellung 4455 Stücke:
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IRF7309TRPBF description infineon-irf7309-datasheet-en.pdf
Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
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IRF7309TRPBF/IR
Hersteller: IR
08+;
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
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S6040RTP littelfuse_thyristor_sxx40x_datasheet.pdf?assetguid=3e6dc21e-4511-421f-834b-b78fdf51f5e3
S6040RTP
Hersteller: Littelfuse Inc.
Description: SCR 600V 40A TO-220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
50+4.03 EUR
100+3.68 EUR
500+3.25 EUR
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IRF7309
Produktcode: 19215
zu Favoriten hinzufügen Lieblingsprodukt

description IRF7309.pdf
IRF7309
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
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F73090-000
Hersteller: TE Connectivity
Multi-Conductor Cables 55PC0214-20-6CS2502 PRICE PER FOOT
Produkt ist nicht verfügbar
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AUIRF7309Q auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309Q
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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AUIRF7309QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D741EF1A6F5005056AB5A8F&compId=auirf7309q.pdf?ci_sign=22ef9c2ac4bfdc45d4b48d901ef86cafc5fe8476
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Power dissipation: 1.4W
Drain current: 4/-3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 16.7nC
On-state resistance: 50/100mΩ
Produkt ist nicht verfügbar
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AUIRF7309QTR auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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AUIRF7309QTR auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRF7309PBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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UMWIRF7309TR 5bdf270d5998f3d9041514c41a5d523f.pdf
UMWIRF7309TR
Hersteller: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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55PC0214-20-6CS2502
Hersteller: TE Connectivity Raychem Cable Protection
Description: 55PC0214-20-6CS2502
Packaging: Bulk
Produkt ist nicht verfügbar
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7309 BECBP SKF pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9E02371D33320D2&compId=7309_BECBP.pdf?ci_sign=dabb5c938717a66f51a2147786349edd66744f89
Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
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