Suchergebnisse für "rf630" : 107
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Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 33
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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P25RF6300F003 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
PBRF6300 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
PBRF6300BZSL | TI | BGA |
auf Bestellung 3068 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
PRF6301AA |
auf Bestellung 2287 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
PRF6302AA |
auf Bestellung 4120 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TRF6301 |
auf Bestellung 1410 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
Транзистор полевой IRF630; 200V 9A; 75W; 0,4R; N-канальный; корпус: ТО220; STM (шт) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
Транзистор польовий IRF630N 9A 200V N-ch TO-220 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF640PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Case: TO220AB Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 125W Mounting: THT Polarisation: unipolar Kind of package: tube Gate charge: 70nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A |
auf Bestellung 3131 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630 Produktcode: 3058
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() ![]() Gehäuse: TO-220AB Uds,V: 200 Idd,A: 9 Rds(on), Ohm: 01.04.2000 Ciss, pF/Qg, nC: 600/19 JHGF: THT |
Produkt ist nicht verfügbar
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IRF6302 Produktcode: 31879
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IRF630A Produktcode: 18853
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: TO-220 Uds,V: 200 Idd,A: 9 Rds(on), Ohm: 01.04.2000 JHGF: THT |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | |||||||||
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ERF6-30-03.5-L-DV-A-K-TR | Samtec Inc. |
![]() Features: Board Guide, Pick and Place Packaging: Tape & Reel (TR) Connector Type: Socket, Outer Shroud Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 60 Pitch: 0.025" (0.64mm) Height Above Board: 0.127" (3.23mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ERF6-30-03.5-L-DV-A-WT-K-TR | Samtec |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ERF6-30-03.5-S-DV-A-K-FR | Samtec |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ERF6-30-03.5-S-DV-A-K-TR | Samtec |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630BTSTU_FP001 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630B_FP001 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630FP | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630L | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NL | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NLPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NS | Infineon Technologies |
![]() ![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NSPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NSTRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NSTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NSTRR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630NSTRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630S | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRF630STRL | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IRF630STRR | Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IRF630STRRPBF | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MRF 630-AMMO | Bel Fuse Inc. |
![]() Packaging: Tape & Box (TB) Package / Case: Radial, Can, Vertical Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Fast Blow Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE Breaking Capacity @ Rated Voltage: 35A Current Rating (Amps): 630 mA Voltage Rating - AC: 250 V Melting I²t: 0.15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MRF 630-BULK | Bel Fuse Inc. |
![]() Packaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Fast Blow Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE Breaking Capacity @ Rated Voltage: 35A Part Status: Active Current Rating (Amps): 630 mA Voltage Rating - AC: 250 V Melting I²t: 0.15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MRF 630-BULK SHORT | Bel Fuse Inc. |
![]() Packaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Fast Blow Breaking Capacity @ Rated Voltage: 35A Current Rating (Amps): 630 mA Voltage Rating - AC: 250 V Melting I²t: 0.15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
MRF630 | Mersen USA Newburyport-MA L.L.C. |
Description: 250V 630mA FA MICRO FUSE Packaging: Bulk Package / Case: Radial, Can, Vertical Fuse Type: Board Mount (Cartridge Style Excluded) Current Rating (Amps): 630mA Mounting Type: Through Hole Response Time: Fast Blow Applications: Electrical, Industrial Breaking Capacity @ Rated Voltage: 50A Voltage Rating - AC: 250 VAC Size / Dimension: 0.329" Dia x 0.303" L (8.35mm x 7.70mm) Approval Agency: CE, CSA, cURus, MITI, UR, VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
VRF-06-30-50-00-N | AirBorn |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
VRF-06-30-50-03-N | AirBorn |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
P25RF6300F003 |
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PBRF6300BZSL |
Hersteller: TI
BGA
BGA
auf Bestellung 3068 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PRF6301AA |
auf Bestellung 2287 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PRF6302AA |
auf Bestellung 4120 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
Транзистор полевой IRF630; 200V 9A; 75W; 0,4R; N-канальный; корпус: ТО220; STM (шт) |
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
Транзистор польовий IRF630N 9A 200V N-ch TO-220 |
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
auf Bestellung 3131 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
38+ | 1.93 EUR |
114+ | 0.63 EUR |
120+ | 0.6 EUR |
IRF630 Produktcode: 3058
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Lieblingsprodukt
|
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Uds,V: 200
Idd,A: 9
Rds(on), Ohm: 01.04.2000
Ciss, pF/Qg, nC: 600/19
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Uds,V: 200
Idd,A: 9
Rds(on), Ohm: 01.04.2000
Ciss, pF/Qg, nC: 600/19
JHGF: THT
Produkt ist nicht verfügbar
Anzahl | Preis |
---|---|
1+ | 0.4 EUR |
10+ | 0.37 EUR |
IRF6302 Produktcode: 31879
zu Favoriten hinzufügen
Lieblingsprodukt
|
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630A Produktcode: 18853
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 200
Idd,A: 9
Rds(on), Ohm: 01.04.2000
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 200
Idd,A: 9
Rds(on), Ohm: 01.04.2000
JHGF: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ERF6-30-03.5-L-DV-A-K-TR |
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Hersteller: Samtec Inc.
Description: CONN SKT 0.635MM 60POS SMD
Features: Board Guide, Pick and Place
Packaging: Tape & Reel (TR)
Connector Type: Socket, Outer Shroud Contacts
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 60
Pitch: 0.025" (0.64mm)
Height Above Board: 0.127" (3.23mm)
Contact Finish Thickness: 10.0µin (0.25µm)
Mated Stacking Heights: 5mm
Part Status: Active
Number of Rows: 2
Description: CONN SKT 0.635MM 60POS SMD
Features: Board Guide, Pick and Place
Packaging: Tape & Reel (TR)
Connector Type: Socket, Outer Shroud Contacts
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 60
Pitch: 0.025" (0.64mm)
Height Above Board: 0.127" (3.23mm)
Contact Finish Thickness: 10.0µin (0.25µm)
Mated Stacking Heights: 5mm
Part Status: Active
Number of Rows: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
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ERF6-30-03.5-L-DV-A-WT-K-TR |
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Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Produkt ist nicht verfügbar
Im Einkaufswagen
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ERF6-30-03.5-S-DV-A-K-FR |
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Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Produkt ist nicht verfügbar
Im Einkaufswagen
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ERF6-30-03.5-S-DV-A-K-TR |
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Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Board to Board & Mezzanine Connectors 0.635 mm Edge Rate(R) Rugged High Speed Socket
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF630BTSTU_FP001 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF630B_FP001 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF630FP |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 200V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF630L |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NS | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NSPBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NSTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NSTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630NSTRR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630NSTRRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
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IRF630S |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630STRL |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Produkt ist nicht verfügbar
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IRF630STRR |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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MRF 630-AMMO |
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Hersteller: Bel Fuse Inc.
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Produkt ist nicht verfügbar
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MRF 630-BULK |
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Hersteller: Bel Fuse Inc.
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE
Breaking Capacity @ Rated Voltage: 35A
Part Status: Active
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Approval Agency: AEC-Q200, CE, CSA, cULus, SEMKO, VDE
Breaking Capacity @ Rated Voltage: 35A
Part Status: Active
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Produkt ist nicht verfügbar
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MRF 630-BULK SHORT |
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Hersteller: Bel Fuse Inc.
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Description: FUSE BRD MNT 630MA 250VAC RADIAL
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.329" Dia x 0.303" H (8.35mm x 7.70mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 630 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.15
Produkt ist nicht verfügbar
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MRF630 |
Hersteller: Mersen USA Newburyport-MA L.L.C.
Description: 250V 630mA FA MICRO FUSE
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Fuse Type: Board Mount (Cartridge Style Excluded)
Current Rating (Amps): 630mA
Mounting Type: Through Hole
Response Time: Fast Blow
Applications: Electrical, Industrial
Breaking Capacity @ Rated Voltage: 50A
Voltage Rating - AC: 250 VAC
Size / Dimension: 0.329" Dia x 0.303" L (8.35mm x 7.70mm)
Approval Agency: CE, CSA, cURus, MITI, UR, VDE
Description: 250V 630mA FA MICRO FUSE
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Fuse Type: Board Mount (Cartridge Style Excluded)
Current Rating (Amps): 630mA
Mounting Type: Through Hole
Response Time: Fast Blow
Applications: Electrical, Industrial
Breaking Capacity @ Rated Voltage: 50A
Voltage Rating - AC: 250 VAC
Size / Dimension: 0.329" Dia x 0.303" L (8.35mm x 7.70mm)
Approval Agency: CE, CSA, cURus, MITI, UR, VDE
Produkt ist nicht verfügbar
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IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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VRF-06-30-50-00-N |
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Hersteller: AirBorn
Board to Board & Mezzanine Connectors
Board to Board & Mezzanine Connectors
Produkt ist nicht verfügbar
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VRF-06-30-50-03-N |
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Hersteller: AirBorn
Board to Board & Mezzanine Connectors
Board to Board & Mezzanine Connectors
Produkt ist nicht verfügbar
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