Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (158381) > Seite 1093 nach 2640
Foto | Bezeichnung | Hersteller | Beschreibung |
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STBR6012W | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STBR6012WY | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STC3100IST | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC Type of integrated circuit: PMIC Kind of integrated circuit: battery monitor Integrated circuit features: Li-Ion Mounting: SMD Case: TSSOP8 Supply voltage: 2.7...5.5V DC Operating temperature: -40...85°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STC3115AIJT | STMicroelectronics | STC3115AIJT Battery and battery cells controllers |
Produkt ist nicht verfügbar |
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STC4054GR | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Integrated circuit features: Li-Ion Mounting: SMD Output current: 0.8A Output voltage: 4.2V Case: SOT23-5 Supply voltage: 4.25...6.5V DC Operating temperature: -40...85°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1620 Stücke: Lieferzeit 7-14 Tag (e) |
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STCC2540IQTR | STMicroelectronics |
Category: Integrated circuits - others Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC Type of integrated circuit: power switch Kind of integrated circuit: USB switch Case: VFQFPN16 Mounting: SMD Kind of package: reel; tape Output current: 2.8A Supply voltage: 4.5...5.5V DC Number of channels: 1 On-state resistance: 65mΩ Kind of output: N-Channel Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STCN75DS2F | STMicroelectronics |
Category: Temperature transducers Description: IC: temperature sensor; -55÷125°C; MSOP8; SMD; Accur: ±2°C; 9bit Type of integrated circuit: temperature sensor Temperature measuring range: -55...125°C Case: MSOP8 Mounting: SMD Interface: I2C; SMBus Temperature measurement accuracy: ±2°C Kind of package: reel; tape Converter resolution: 9bit Supply voltage: 2.7...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STCS05DR | STMicroelectronics |
Category: LED drivers Description: IC: driver; LED driver; SO8; 0.5A; Ch: 1; PWM; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO8 Output current: 0.5A Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating temperature: -40...125°C Input voltage: 4.5...40V Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STCS1APHR | STMicroelectronics | STCS1APHR LED drivers |
Produkt ist nicht verfügbar |
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STCS1APUR | STMicroelectronics | STCS1APUR LED drivers |
Produkt ist nicht verfügbar |
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STCS1PHR | STMicroelectronics | STCS1PHR LED drivers |
Produkt ist nicht verfügbar |
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STCS1PUR | STMicroelectronics | STCS1PUR LED drivers |
Produkt ist nicht verfügbar |
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STCS2ASPR | STMicroelectronics | STCS2ASPR LED drivers |
auf Bestellung 2224 Stücke: Lieferzeit 7-14 Tag (e) |
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STCS2SPR | STMicroelectronics | STCS2SPR LED drivers |
auf Bestellung 557 Stücke: Lieferzeit 7-14 Tag (e) |
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STD100N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK Mounting: SMD Drain-source voltage: 100V Drain current: 62A On-state resistance: 8mΩ Case: DPAK Polarisation: unipolar Kind of channel: enhanced Power dissipation: 120W Pulsed drain current: 320A Gate-source voltage: ±20V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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STD10N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.9A Power dissipation: 85W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2433 Stücke: Lieferzeit 7-14 Tag (e) |
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STD10NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK Mounting: SMD Features of semiconductor devices: ESD protected gate Case: DPAK Power dissipation: 50W Technology: SuperMesh™ Kind of package: reel; tape Drain-source voltage: 100V Drain current: 9A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1305 Stücke: Lieferzeit 7-14 Tag (e) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2458 Stücke: Lieferzeit 7-14 Tag (e) |
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STD10NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 32A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD10P6F6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.2A Power dissipation: 35W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1786 Stücke: Lieferzeit 7-14 Tag (e) |
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STD11NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD12NF06L-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK Mounting: THT Case: IPAK Kind of package: tube Polarisation: unipolar Technology: STripFET™ II Drain current: 12A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 90mΩ Power dissipation: 30W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD12NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Polarisation: unipolar Technology: SuperMesh™ Features of semiconductor devices: ESD protected gate Drain current: 8.5A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.1Ω Power dissipation: 30W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1889 Stücke: Lieferzeit 7-14 Tag (e) |
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STD130N6F7 | STMicroelectronics | STD130N6F7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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STD13N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD13N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2479 Stücke: Lieferzeit 7-14 Tag (e) |
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STD13NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD15NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 70W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Drain-source voltage: 100V Drain current: 16A On-state resistance: 65mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD16NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 40W Case: DPAK Gate-source voltage: ±18V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD16NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD16NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Power dissipation: 85W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK Drain-source voltage: 30V Drain current: 12A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3532 Stücke: Lieferzeit 7-14 Tag (e) |
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STD17NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Power dissipation: 90W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD1802T4 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1366 Stücke: Lieferzeit 7-14 Tag (e) |
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STD18N55M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 192mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD18N60M6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 38A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: SMD Gate charge: 16.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2473 Stücke: Lieferzeit 7-14 Tag (e) |
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STD18N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2186 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1HN60K3 | STMicroelectronics | STD1HN60K3 SMD N channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1NK60-1 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.63A Power dissipation: 30W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD1NK60T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1A Power dissipation: 30W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5421 Stücke: Lieferzeit 7-14 Tag (e) |
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STD1NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD20NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 60W Case: DPAK Gate-source voltage: ±18V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1636 Stücke: Lieferzeit 7-14 Tag (e) |
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STD20NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD20NF20 | STMicroelectronics | STD20NF20 SMD N channel transistors |
Produkt ist nicht verfügbar |
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STD25NF10LA | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 100W Case: DPAK Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2226 Stücke: Lieferzeit 7-14 Tag (e) |
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STD25NF10LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK Power dissipation: 100W Case: DPAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Polarisation: unipolar Drain current: 25A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 40mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD25NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD25NF20 | STMicroelectronics | STD25NF20 SMD N channel transistors |
Produkt ist nicht verfügbar |
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STD26P3LLH6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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STD2HNK60Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2LN60K3 | STMicroelectronics | STD2LN60K3 SMD N channel transistors |
auf Bestellung 556 Stücke: Lieferzeit 7-14 Tag (e) |
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STD2N105K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 0.95A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 259 Stücke: Lieferzeit 7-14 Tag (e) |
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STD2N62K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 1A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Drain current: 1.3A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω Power dissipation: 45W Polarisation: unipolar Technology: SuperMesh™ Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2N95K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Technology: SuperMesh™ Features of semiconductor devices: ESD protected gate Drain current: 1.3A Kind of channel: enhanced Drain-source voltage: 950V Type of transistor: N-MOSFET On-state resistance: 5Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2NK100Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK Mounting: SMD Case: DPAK Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 8.5Ω Power dissipation: 70W Polarisation: unipolar Technology: SuperMesh™ Features of semiconductor devices: ESD protected gate Drain current: 1.16A Kind of channel: enhanced Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2NK90ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.3A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 6500mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 885 Stücke: Lieferzeit 7-14 Tag (e) |
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STD30NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD35NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK Kind of package: reel; tape Mounting: SMD Power dissipation: 80W Polarisation: unipolar Technology: STripFET™ II Drain current: 35A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Case: DPAK On-state resistance: 17mΩ Gate-source voltage: ±16V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4565 Stücke: Lieferzeit 7-14 Tag (e) |
|
STBR6012W |
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STBR6012WY |
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STC3100IST |
Hersteller: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: battery monitor
Integrated circuit features: Li-Ion
Mounting: SMD
Case: TSSOP8
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Category: Battery and battery cells controllers
Description: IC: PMIC; battery monitor; Li-Ion; TSSOP8; 2.7÷5.5VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: battery monitor
Integrated circuit features: Li-Ion
Mounting: SMD
Case: TSSOP8
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STC3115AIJT |
Hersteller: STMicroelectronics
STC3115AIJT Battery and battery cells controllers
STC3115AIJT Battery and battery cells controllers
Produkt ist nicht verfügbar
STC4054GR |
Hersteller: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: Li-Ion
Mounting: SMD
Output current: 0.8A
Output voltage: 4.2V
Case: SOT23-5
Supply voltage: 4.25...6.5V DC
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion; Iout: 800mA; 4.2V
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: Li-Ion
Mounting: SMD
Output current: 0.8A
Output voltage: 4.2V
Case: SOT23-5
Supply voltage: 4.25...6.5V DC
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1620 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.92 EUR |
42+ | 1.73 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
STCC2540IQTR |
Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Output current: 2.8A
Supply voltage: 4.5...5.5V DC
Number of channels: 1
On-state resistance: 65mΩ
Kind of output: N-Channel
Anzahl je Verpackung: 3000 Stücke
Category: Integrated circuits - others
Description: IC: power switch; USB switch; VFQFPN16; reel,tape; 4.5÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Output current: 2.8A
Supply voltage: 4.5...5.5V DC
Number of channels: 1
On-state resistance: 65mΩ
Kind of output: N-Channel
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
STCN75DS2F |
Hersteller: STMicroelectronics
Category: Temperature transducers
Description: IC: temperature sensor; -55÷125°C; MSOP8; SMD; Accur: ±2°C; 9bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -55...125°C
Case: MSOP8
Mounting: SMD
Interface: I2C; SMBus
Temperature measurement accuracy: ±2°C
Kind of package: reel; tape
Converter resolution: 9bit
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Temperature transducers
Description: IC: temperature sensor; -55÷125°C; MSOP8; SMD; Accur: ±2°C; 9bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -55...125°C
Case: MSOP8
Mounting: SMD
Interface: I2C; SMBus
Temperature measurement accuracy: ±2°C
Kind of package: reel; tape
Converter resolution: 9bit
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STCS05DR |
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO8; 0.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 4.5...40V
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO8; 0.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 4.5...40V
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STCS2ASPR |
Hersteller: STMicroelectronics
STCS2ASPR LED drivers
STCS2ASPR LED drivers
auf Bestellung 2224 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.86 EUR |
26+ | 2.85 EUR |
27+ | 2.69 EUR |
600+ | 2.6 EUR |
STCS2SPR |
Hersteller: STMicroelectronics
STCS2SPR LED drivers
STCS2SPR LED drivers
auf Bestellung 557 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.82 EUR |
26+ | 2.82 EUR |
27+ | 2.66 EUR |
100+ | 2.65 EUR |
STD100N10F7 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Mounting: SMD
Drain-source voltage: 100V
Drain current: 62A
On-state resistance: 8mΩ
Case: DPAK
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 120W
Pulsed drain current: 320A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Mounting: SMD
Drain-source voltage: 100V
Drain current: 62A
On-state resistance: 8mΩ
Case: DPAK
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 120W
Pulsed drain current: 320A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
STD10N60M2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2433 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 1.72 EUR |
47+ | 1.54 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
STD10NF10T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: DPAK
Power dissipation: 50W
Technology: SuperMesh™
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: DPAK
Power dissipation: 50W
Technology: SuperMesh™
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1305 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
118+ | 0.61 EUR |
130+ | 0.55 EUR |
179+ | 0.4 EUR |
189+ | 0.38 EUR |
STD10NM60N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
71+ | 1.02 EUR |
86+ | 0.84 EUR |
91+ | 0.79 EUR |
500+ | 0.77 EUR |
STD10NM60ND |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 32A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STD10P6F6 |
Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.2A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.2A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1786 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.08 EUR |
74+ | 0.97 EUR |
103+ | 0.7 EUR |
107+ | 0.67 EUR |
STD11NM60ND |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD12NF06L-1 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 12A; 30W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD12NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 8.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 8.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1889 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
127+ | 0.57 EUR |
141+ | 0.51 EUR |
188+ | 0.38 EUR |
198+ | 0.36 EUR |
STD130N6F7 |
Hersteller: STMicroelectronics
STD130N6F7 SMD N channel transistors
STD130N6F7 SMD N channel transistors
Produkt ist nicht verfügbar
STD13N60DM2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STD13N60M2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.02 EUR |
40+ | 1.82 EUR |
50+ | 1.46 EUR |
52+ | 1.39 EUR |
500+ | 1.34 EUR |
STD13NM60N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD15NF10T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 70W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 70W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
96+ | 0.75 EUR |
106+ | 0.68 EUR |
137+ | 0.52 EUR |
145+ | 0.49 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD16NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD16NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD16NF25 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STD17NF03LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3532 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
145+ | 0.49 EUR |
166+ | 0.43 EUR |
227+ | 0.32 EUR |
241+ | 0.3 EUR |
2500+ | 0.29 EUR |
STD17NF25 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STD1802T4 |
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1366 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.93 EUR |
85+ | 0.84 EUR |
120+ | 0.6 EUR |
125+ | 0.57 EUR |
STD18N55M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STD18N60M6 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 38A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2473 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3.02 EUR |
27+ | 2.72 EUR |
37+ | 1.96 EUR |
39+ | 1.86 EUR |
STD18N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2186 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4 EUR |
19+ | 3.79 EUR |
25+ | 2.95 EUR |
26+ | 2.77 EUR |
500+ | 2.75 EUR |
1000+ | 2.66 EUR |
STD1HN60K3 |
Hersteller: STMicroelectronics
STD1HN60K3 SMD N channel transistors
STD1HN60K3 SMD N channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
51+ | 1.4 EUR |
139+ | 0.51 EUR |
500+ | 0.34 EUR |
STD1NK60-1 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.63A
Power dissipation: 30W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD1NK60T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5421 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
129+ | 0.56 EUR |
136+ | 0.53 EUR |
192+ | 0.37 EUR |
203+ | 0.35 EUR |
STD1NK80ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD20NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1636 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.44 EUR |
55+ | 1.3 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
STD20NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD20NF20 |
Hersteller: STMicroelectronics
STD20NF20 SMD N channel transistors
STD20NF20 SMD N channel transistors
Produkt ist nicht verfügbar
STD25NF10LA |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2226 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.23 EUR |
38+ | 1.93 EUR |
46+ | 1.59 EUR |
48+ | 1.5 EUR |
STD25NF10LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD25NF10T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD25NF20 |
Hersteller: STMicroelectronics
STD25NF20 SMD N channel transistors
STD25NF20 SMD N channel transistors
Produkt ist nicht verfügbar
STD26P3LLH6 |
Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
STD2HNK60Z |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD2LN60K3 |
Hersteller: STMicroelectronics
STD2LN60K3 SMD N channel transistors
STD2LN60K3 SMD N channel transistors
auf Bestellung 556 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.35 EUR |
160+ | 0.45 EUR |
170+ | 0.42 EUR |
500+ | 0.41 EUR |
STD2N105K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 259 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.5 EUR |
31+ | 2.35 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
500+ | 1.63 EUR |
STD2N62K3 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD2N80K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD2N95K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 950V
Type of transistor: N-MOSFET
On-state resistance: 5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 1.3A; 45W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 950V
Type of transistor: N-MOSFET
On-state resistance: 5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD2NK100Z |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 8.5Ω
Power dissipation: 70W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 1.16A
Kind of channel: enhanced
Drain-source voltage: 1kV
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 8.5Ω
Power dissipation: 70W
Polarisation: unipolar
Technology: SuperMesh™
Features of semiconductor devices: ESD protected gate
Drain current: 1.16A
Kind of channel: enhanced
Drain-source voltage: 1kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD2NK90ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6500mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6500mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 885 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.41 EUR |
80+ | 0.9 EUR |
100+ | 0.72 EUR |
119+ | 0.6 EUR |
126+ | 0.57 EUR |
STD30NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD35NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 80W
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 35A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: DPAK
On-state resistance: 17mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 80W
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 35A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: DPAK
On-state resistance: 17mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4565 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.6 EUR |
50+ | 1.44 EUR |
60+ | 1.2 EUR |
64+ | 1.13 EUR |