Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160808) > Seite 1104 nach 2681
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGAP2SICD | STMicroelectronics | STGAP2SICD MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICDTR | STMicroelectronics |
 STGAP2SICDTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICS | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: 4A Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Frequency: 1MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSACTR | STMicroelectronics | STGAP2SICSACTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSANCTR | STMicroelectronics | STGAP2SICSANCTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSC | STMicroelectronics |
STGAP2SICSC MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSCTR | STMicroelectronics | STGAP2SICSCTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSNC | STMicroelectronics | STGAP2SICSNC MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSNCTR | STMicroelectronics | STGAP2SICSNCTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSNTR | STMicroelectronics |
STGAP2SICSNTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SICSTR | STMicroelectronics | STGAP2SICSTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SM | STMicroelectronics |
STGAP2SM MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP2SMTR | STMicroelectronics |
STGAP2SMTR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP4S | STMicroelectronics | STGAP4S MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGAP4STR | STMicroelectronics | STGAP4STR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
||||||||||||
| STGB10H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB10M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
STGB10NB37LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 440V Collector current: 20A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
auf Bestellung 671 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
| STGB10NB40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
STGB10NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
| STGB10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
STGB14NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| STGB15H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB15M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB18N40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 30A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB19NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20H65FB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 20A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20N45LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20NB41LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 20A Power dissipation: 200W Case: D2PAK Pulsed collector current: 80A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB20V60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB25N36LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB30H60DFB | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB30H60DLLFBAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB30H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB30M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
STGB30V60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
STGB3NC120HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| STGB40H65FB | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB40V60F | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 283W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 226nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB4M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 86W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB50H65FB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB5H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB6M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB6NC60HDT4 | STMicroelectronics |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB7H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB7NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGB8NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGD10HF60KD | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62.5W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
STGD10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2264 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
 +1 |
STGD18N40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 420V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 420V Collector current: 25A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| STGD19N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGD20N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGD20N45LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGD25N36LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| STGD25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
| STGAP2SICDTR |
|
Hersteller: STMicroelectronics
STGAP2SICDTR MOSFET/IGBT drivers
STGAP2SICDTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICS |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: 4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: 4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSACTR |
Hersteller: STMicroelectronics
STGAP2SICSACTR MOSFET/IGBT drivers
STGAP2SICSACTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSANCTR |
Hersteller: STMicroelectronics
STGAP2SICSANCTR MOSFET/IGBT drivers
STGAP2SICSANCTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSC |
|
Hersteller: STMicroelectronics
STGAP2SICSC MOSFET/IGBT drivers
STGAP2SICSC MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSCTR |
Hersteller: STMicroelectronics
STGAP2SICSCTR MOSFET/IGBT drivers
STGAP2SICSCTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSNC |
Hersteller: STMicroelectronics
STGAP2SICSNC MOSFET/IGBT drivers
STGAP2SICSNC MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSNCTR |
Hersteller: STMicroelectronics
STGAP2SICSNCTR MOSFET/IGBT drivers
STGAP2SICSNCTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSNTR |
|
Hersteller: STMicroelectronics
STGAP2SICSNTR MOSFET/IGBT drivers
STGAP2SICSNTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGAP2SICSTR |
Hersteller: STMicroelectronics
STGAP2SICSTR MOSFET/IGBT drivers
STGAP2SICSTR MOSFET/IGBT drivers
Produkt ist nicht verfügbar
| STGB10H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB10M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB10NB37LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
auf Bestellung 671 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.43 EUR |
| 24+ | 3.09 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.23 EUR |
| STGB10NB40LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB10NC60HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 39+ | 1.87 EUR |
| 50+ | 1.46 EUR |
| 53+ | 1.37 EUR |
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB14NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGB15H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB15M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB18N40LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB19NC60HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20H65FB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20N40LZ |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 20A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 20A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20N45LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20NB41LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB20V60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB25N36LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB25N40LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGB30H60DFB |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB30H60DLLFBAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB30M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB30V60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGB3NC120HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGB40H65FB |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB40V60F |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB4M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB50H65FB2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB5H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB6M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB6NC60HDT4 | |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB7H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB7NC60HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGB8NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD10HF60KD |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD10NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 48+ | 1.5 EUR |
| 55+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| 500+ | 1.19 EUR |
| STGD18N40LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 420V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 420V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 420V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 420V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| STGD19N40LZ |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD20N40LZ |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD20N45LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD25N36LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGD25N40LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar