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STGAP2SICSANCTR STGAP2SICSANCTR STMicroelectronics stgap2sicsan.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.25V
Output voltage: 1.7kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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STGAP2SICSCTR STMicroelectronics stgap2sics.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.2kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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STGAP2SICSN STGAP2SICSN STMicroelectronics stgap2sicsn.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; SO8; Ch: 1; MOSFET
Type of integrated circuit: driver
Case: SO8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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STGAP2SICSNCTR STGAP2SICSNCTR STMicroelectronics stgap2sicsn.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.7kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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1.5KE39CA 1.5KE39CA STMicroelectronics 1.5KE100A.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 28A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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LM339N LM339N STMicroelectronics suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flm339 LM339.pdf en.CD00000460.pdf lm339-d.pdf Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Number of channels: 4
Mounting: THT
Case: DIP14
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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STGAP2SICSANCTR stgap2sicsan.pdf
STGAP2SICSANCTR
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.25V
Output voltage: 1.7kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STGAP2SICSCTR stgap2sics.pdf
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.2kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STGAP2SICSN stgap2sicsn.pdf
STGAP2SICSN
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SO8; Ch: 1; MOSFET
Type of integrated circuit: driver
Case: SO8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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STGAP2SICSNCTR stgap2sicsn.pdf
STGAP2SICSNCTR
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.7kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE39CA 1.5KE100A.pdf
1.5KE39CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 28A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM339N suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flm339 LM339.pdf en.CD00000460.pdf lm339-d.pdf
LM339N
Hersteller: STMicroelectronics
Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Number of channels: 4
Mounting: THT
Case: DIP14
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH