Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170498) > Seite 2746 nach 2842
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TDA7269A | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 28W Integrated circuit features: stereo Mounting: THT Supply voltage: 5...20V DC Number of channels: 2 Amplifier class: AB Case: MULTIWATT11 Impedance: 8Ω Kind of package: tube |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7293V | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω Type of integrated circuit: audio amplifier Output power: 100W Mounting: THT Supply voltage: 12...50V DC Number of channels: 1 Amplifier class: AB Case: MULTIWATT15 Impedance: 4Ω Kind of package: tube |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7294V | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω Type of integrated circuit: audio amplifier Output power: 100W Mounting: THT Supply voltage: 10...40V DC Number of channels: 1 Amplifier class: AB Case: MULTIWATT15 Impedance: 4Ω Kind of package: tube |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA749213TR | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω Type of integrated circuit: audio amplifier Output power: 50W Mounting: SMD Supply voltage: 8...26V DC Number of channels: 2 Amplifier class: D Case: PowerSSO36 Impedance: 60Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TDA7561 | STMicroelectronics |
![]() Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4 Type of integrated circuit: audio amplifier Output power: 60W Interface: I2C Integrated circuit features: stereo Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω Frequency: 400kHz |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7564B | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 72W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
TDA7575B | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 75W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 2 Amplifier class: AB Case: FLEXIWATT27 Impedance: 2Ω |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7850 | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4 Type of integrated circuit: audio amplifier Output power: 80W Integrated circuit features: MOSFET; rail-to-rail output Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C16-FDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
M24C16-FMC5TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
M24C16-FMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
M24C16-FMH6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -20...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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M24C16-FMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
M24C16-RDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
M24C16-RMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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M24C16-RMN6P | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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M24C16-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Memory organisation: 2kx8bit |
auf Bestellung 11260 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C16-WMN6P | STMicroelectronics |
![]() ![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Memory organisation: 2kx8bit |
auf Bestellung 1086 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C16-WMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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STB13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 993 Stücke: Lieferzeit 14-21 Tag (e) |
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STD13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STD13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1946 Stücke: Lieferzeit 14-21 Tag (e) |
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STF13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19nC Pulsed drain current: 44A |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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STF13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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STF33N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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STF33N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
STP13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1.5KE440A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE440CA | STMicroelectronics |
![]() Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA |
auf Bestellung 903 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904AHYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.6V/μs Operating temperature: -40...150°C Input offset voltage: 6mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LM2904AYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power Kind of package: reel; tape |
auf Bestellung 51212 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA25-600B | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 25A; RD91; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: RD91 Gate current: 50mA Mounting: THT Kind of package: bulk |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA41-600BRG | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 41A; TOP3; Igt: 50mA Case: TOP3 Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 41A Gate current: 50mA Kind of package: tube Type of thyristor: triac |
auf Bestellung 2436 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA41-700BRG | STMicroelectronics |
![]() ![]() Description: Triac; 700V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822RL | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.475V Max. forward impulse current: 80A Kind of package: reel Max. load current: 10A |
auf Bestellung 2168 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400ARL | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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LM358D | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube Integrated circuit features: low power Kind of package: tube Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
auf Bestellung 3384 Stücke: Lieferzeit 14-21 Tag (e) |
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LM358DT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Integrated circuit features: low power Kind of package: reel; tape Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
auf Bestellung 139289 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE200A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Tolerance: ±5% |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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LM234DT | STMicroelectronics |
![]() Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3% Type of integrated circuit: current source Operating voltage: 1...40V Mounting: SMD Case: SO8 Operating temperature: -25...100°C Kind of package: reel; tape Tolerance: ±3% Output current: 10mA |
auf Bestellung 1462 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400CA | STMicroelectronics |
![]() Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack Max. off-state voltage: 342V Semiconductor structure: bidirectional Max. forward impulse current: 4A Breakdown voltage: 400V Leakage current: 1µA Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO201 |
auf Bestellung 2284 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5819RL | STMicroelectronics |
![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel Max. load current: 10A |
auf Bestellung 2199 Stücke: Lieferzeit 14-21 Tag (e) |
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USBLC6-2P6 | STMicroelectronics |
![]() ![]() Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT666 Max. off-state voltage: 5V Leakage current: 10nA Kind of package: reel; tape Application: Ethernet; USB Version: ESD |
auf Bestellung 5489 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE15CA | STMicroelectronics |
![]() Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack |
auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) |
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STM3240G-EVAL | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F407IGH6 Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM32429I-EVAL1 | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F429NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM32439I-EVAL2 | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F439NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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T1235-600G | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: tube Technology: Snubberless™ |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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T1235-600G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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T1235H-6G | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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T1235H-6G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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T1235H-6T | STMicroelectronics |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube Technology: Snubberless™ |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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ULN2804A | STMicroelectronics |
![]() Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP18 Output current: 0.5A Output voltage: 50V Number of channels: 8 Mounting: THT Operating temperature: -20...85°C Application: 6-15V PMOS/CMOS; for inductive load Input voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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Z0107MA 1AA2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5mA Mounting: THT Case: TO92 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Kind of package: bulk Type of thyristor: triac |
auf Bestellung 568 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0107MA 5AL2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5mA Mounting: THT Case: TO92 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Kind of package: tape Type of thyristor: triac |
auf Bestellung 2042 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0107MN 5AA4 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; SOT223; Igt: 5mA Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Kind of package: reel; tape Type of thyristor: triac |
auf Bestellung 5648 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0107MN 6AA4 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; SOT223; Igt: 5mA Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Kind of package: reel; tape Type of thyristor: triac |
auf Bestellung 2603 Stücke: Lieferzeit 14-21 Tag (e) |
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STB45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Case: D2PAK On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhancement Power dissipation: 210W Gate-source voltage: ±25V Pulsed drain current: 140A Drain current: 22A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STF35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 40W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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STF45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 40W Version: ESD Gate-source voltage: ±25V Drain current: 22A |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7269A |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 28W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 5...20V DC
Number of channels: 2
Amplifier class: AB
Case: MULTIWATT11
Impedance: 8Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 28W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 5...20V DC
Number of channels: 2
Amplifier class: AB
Case: MULTIWATT11
Impedance: 8Ω
Kind of package: tube
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.04 EUR |
13+ | 5.56 EUR |
100+ | 5.35 EUR |
TDA7293V |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.58 EUR |
10+ | 7.36 EUR |
11+ | 6.96 EUR |
100+ | 6.69 EUR |
TDA7294V |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 10...40V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 10...40V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.74 EUR |
11+ | 6.65 EUR |
TDA749213TR |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω
Type of integrated circuit: audio amplifier
Output power: 50W
Mounting: SMD
Supply voltage: 8...26V DC
Number of channels: 2
Amplifier class: D
Case: PowerSSO36
Impedance: 60Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω
Type of integrated circuit: audio amplifier
Output power: 50W
Mounting: SMD
Supply voltage: 8...26V DC
Number of channels: 2
Amplifier class: D
Case: PowerSSO36
Impedance: 60Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TDA7561 |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Frequency: 400kHz
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Frequency: 400kHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
TDA7564B |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TDA7575B |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 75W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 2
Amplifier class: AB
Case: FLEXIWATT27
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 75W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 2
Amplifier class: AB
Case: FLEXIWATT27
Impedance: 2Ω
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.49 EUR |
6+ | 12 EUR |
7+ | 11.34 EUR |
TDA7850 |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.78 EUR |
8+ | 8.94 EUR |
M24C16-FDW6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-FMC5TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-FMC6TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-FMH6TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-FMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-RDW6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-RMC6TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-RMN6P |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M24C16-RMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
auf Bestellung 11260 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
451+ | 0.16 EUR |
550+ | 0.13 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
1000+ | 0.096 EUR |
2500+ | 0.094 EUR |
M24C16-WMN6P | ![]() |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
311+ | 0.23 EUR |
329+ | 0.22 EUR |
M24C16-WMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STB13N60M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.27 EUR |
41+ | 1.76 EUR |
43+ | 1.67 EUR |
200+ | 1.62 EUR |
STD13N60DM2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STD13N60M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1946 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
37+ | 1.97 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
500+ | 1.34 EUR |
STF13N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 44A
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.36 EUR |
42+ | 1.73 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
STF13N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.72 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
59+ | 1.22 EUR |
61+ | 1.19 EUR |
100+ | 1.16 EUR |
STF33N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STF33N60M6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP13N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE440A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
58+ | 1.24 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
1.5KE440CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.5 EUR |
62+ | 1.16 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
LM2904AHYPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2904AYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
auf Bestellung 51212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
417+ | 0.17 EUR |
463+ | 0.15 EUR |
496+ | 0.14 EUR |
BTA25-600B | ![]() |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.87 EUR |
9+ | 8.44 EUR |
BTA41-600BRG | ![]() |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Case: TOP3
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 41A
Gate current: 50mA
Kind of package: tube
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Case: TOP3
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 41A
Gate current: 50mA
Kind of package: tube
Type of thyristor: triac
auf Bestellung 2436 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.09 EUR |
19+ | 3.93 EUR |
20+ | 3.62 EUR |
21+ | 3.42 EUR |
300+ | 3.33 EUR |
BTA41-700BRG | ![]() |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.84 EUR |
10+ | 7.35 EUR |
1N5822RL |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
auf Bestellung 2168 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
343+ | 0.21 EUR |
447+ | 0.16 EUR |
705+ | 0.1 EUR |
736+ | 0.097 EUR |
1900+ | 0.096 EUR |
1.5KE400ARL |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
63+ | 1.14 EUR |
68+ | 1.06 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
LM358D |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
auf Bestellung 3384 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
582+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
2500+ | 0.09 EUR |
LM358DT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
auf Bestellung 139289 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
532+ | 0.13 EUR |
633+ | 0.11 EUR |
736+ | 0.097 EUR |
758+ | 0.094 EUR |
782+ | 0.092 EUR |
807+ | 0.089 EUR |
1000+ | 0.084 EUR |
P6KE200A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
114+ | 0.63 EUR |
130+ | 0.55 EUR |
319+ | 0.22 EUR |
336+ | 0.21 EUR |
LM234DT |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
41+ | 1.74 EUR |
93+ | 0.77 EUR |
99+ | 0.73 EUR |
1.5KE400CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Max. off-state voltage: 342V
Semiconductor structure: bidirectional
Max. forward impulse current: 4A
Breakdown voltage: 400V
Leakage current: 1µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Max. off-state voltage: 342V
Semiconductor structure: bidirectional
Max. forward impulse current: 4A
Breakdown voltage: 400V
Leakage current: 1µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201
auf Bestellung 2284 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
64+ | 1.13 EUR |
129+ | 0.55 EUR |
137+ | 0.52 EUR |
1200+ | 0.5 EUR |
1N5819RL | ![]() |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
auf Bestellung 2199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
400+ | 0.18 EUR |
451+ | 0.16 EUR |
534+ | 0.13 EUR |
1241+ | 0.058 EUR |
1313+ | 0.054 EUR |
USBLC6-2P6 | ![]() |
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Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 10nA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 10nA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
204+ | 0.35 EUR |
232+ | 0.31 EUR |
256+ | 0.28 EUR |
491+ | 0.15 EUR |
521+ | 0.14 EUR |
P6KE15CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
140+ | 0.51 EUR |
424+ | 0.17 EUR |
451+ | 0.16 EUR |
STM3240G-EVAL |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F407IGH6
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F407IGH6
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32429I-EVAL1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32439I-EVAL2 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T1235-600G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Technology: Snubberless™
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
T1235-600G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
T1235H-6G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
56+ | 1.27 EUR |
T1235H-6G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
54+ | 1.34 EUR |
60+ | 1.2 EUR |
64+ | 1.13 EUR |
100+ | 1.1 EUR |
T1235H-6T |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
41+ | 1.74 EUR |
ULN2804A |
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Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: 6-15V PMOS/CMOS; for inductive load
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: 6-15V PMOS/CMOS; for inductive load
Input voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
Z0107MA 1AA2 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: bulk
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: bulk
Type of thyristor: triac
auf Bestellung 568 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
307+ | 0.23 EUR |
468+ | 0.15 EUR |
568+ | 0.13 EUR |
Z0107MA 5AL2 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: tape
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: tape
Type of thyristor: triac
auf Bestellung 2042 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
148+ | 0.49 EUR |
229+ | 0.31 EUR |
582+ | 0.12 EUR |
Z0107MN 5AA4 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: reel; tape
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: reel; tape
Type of thyristor: triac
auf Bestellung 5648 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
196+ | 0.37 EUR |
291+ | 0.25 EUR |
350+ | 0.2 EUR |
463+ | 0.15 EUR |
511+ | 0.14 EUR |
Z0107MN 6AA4 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: reel; tape
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Kind of package: reel; tape
Type of thyristor: triac
auf Bestellung 2603 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
200+ | 0.36 EUR |
280+ | 0.26 EUR |
428+ | 0.17 EUR |
455+ | 0.16 EUR |
2000+ | 0.15 EUR |
STB45N65M5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Case: D2PAK
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 210W
Gate-source voltage: ±25V
Pulsed drain current: 140A
Drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Case: D2PAK
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 210W
Gate-source voltage: ±25V
Pulsed drain current: 140A
Drain current: 22A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STF35N65DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.28 EUR |
13+ | 5.71 EUR |
14+ | 5.39 EUR |
STF45N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.58 EUR |
10+ | 7.34 EUR |
50+ | 7.06 EUR |