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STGP3HF60HD STGP3HF60HD STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8381251CC70500D2&compId=STGx3HF60hd.pdf?ci_sign=bb6fe0dd1647498e510241c883fdc7513f2fa398 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGP8M120DF3 STMicroelectronics stgp8m120df3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGP6M65DF2 STMicroelectronics en.DM00249613.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 21.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGP20H65FB2 STMicroelectronics stgp20h65fb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGP20M65DF2 STMicroelectronics en.DM00245294.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGP30H65F STMicroelectronics en.DM00102085.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
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STGP4M65DF2 STMicroelectronics en.DM00248842.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: THT
Gate charge: 15.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32U5G9BJY6QTR STMicroelectronics stm32u5g9zj.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; WLCSP208; 1.71÷3.6VDC
Kind of architecture: Cortex M33
Case: WLCSP208
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: reel; tape
Mounting: SMD
Family: STM32U5
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 12bit D/A converters: 2
Number of 32bit timers: 4
Number of 16bit timers: 11
Number of 12bit A/D converters: 24
Number of inputs/outputs: 145
Memory: 3MB SRAM; 4Mb FLASH
Clock frequency: 160MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Interface: DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
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STM32U5A9BJY6QTR STMicroelectronics stm32u5a5aj.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; WLCSP208; 1.71÷3.6VDC
Kind of architecture: Cortex M33
Case: WLCSP208
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: reel; tape
Mounting: SMD
Family: STM32U5
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 12bit D/A converters: 2
Number of 32bit timers: 4
Number of 16bit timers: 11
Number of 12bit A/D converters: 24
Number of inputs/outputs: 145
Memory: 2.5MB SRAM; 4MB FLASH
Clock frequency: 160MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
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TIP29C TIP29C STMicroelectronics tip29c.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 509 Stücke:
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69+1.04 EUR
119+0.6 EUR
137+0.52 EUR
152+0.47 EUR
168+0.43 EUR
500+0.34 EUR
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TIP29A TIP29A STMicroelectronics tip29c.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
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68+1.06 EUR
136+0.53 EUR
147+0.49 EUR
162+0.44 EUR
175+0.41 EUR
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1.5KE15CA 1.5KE15CA STMicroelectronics 1.5KE100A.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 71A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
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TSV6291AICT STMicroelectronics tsv6291a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SC70-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV6291AILT TSV6291AILT STMicroelectronics tsv6291a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV6291ICT STMicroelectronics tsv6291.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SC70-5
Slew rate: 0.5V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV6291ILT TSV6291ILT STMicroelectronics tsv6291.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TDA7265 TDA7265 STMicroelectronics en.CD00000145.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
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2N2222A 2N2222A STMicroelectronics 15258.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 800mA; 500mW; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO18
Mounting: THT
Frequency: 250MHz
Power: 0.5W
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TIP42C TIP42C STMicroelectronics TIP42C.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 115V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220AB
Mounting: THT
Power dissipation: 65W
Kind of package: tube
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ST7540 STMicroelectronics en.CD00096923.pdf Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 4.8kbps; TSSOP28; CMOS; 16MHz
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 4.8kbps
Mounting: SMD
Case: TSSOP28
Number of receivers: 1
Number of transmitters: 1
Operating temperature: -40...85°C
DC supply current: 5mA
Integrated circuit features: differential
Technology: CMOS
Frequency: 16MHz
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50+14.67 EUR
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X-NUCLEO-IHM17M1 X-NUCLEO-IHM17M1 STMicroelectronics en.DM00477243.pdf Category: Add-on boards
Description: Expansion board; Comp: STSPIN233; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN233
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
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X-NUCLEO-IHM04A1 X-NUCLEO-IHM04A1 STMicroelectronics X-NUCLEO-IHM04A1.pdf Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
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X-NUCLEO-IHM11M1
+1
 		X-NUCLEO-IHM11M1 STMicroelectronics x-nucleo-ihm11m1.pdf Category: Add-on boards
Description: Expansion board; Comp: STSPIN230; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN230
Associated circuits: STM32
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
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X-NUCLEO-IHM13A1 X-NUCLEO-IHM13A1 STMicroelectronics X-NUCLEO-IHM13A1.pdf Category: Add-on boards
Description: Expansion board; Comp: STSPIN250; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN250
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brush DC motor driver
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X-NUCLEO-IHM05A1 X-NUCLEO-IHM05A1 STMicroelectronics X-NUCLEO-IHM05A1.pdf Category: Add-on boards
Description: Expansion board; Comp: L6208; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6208
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: stepper motor driver
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X-NUCLEO-IHM09M2 STMicroelectronics x-nucleo-ihm09m2.pdf Category: Development kits - Unclassified
Description: X-NUCLEO-IHM09M2
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.91 EUR
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MMBTA42 MMBTA42 STMicroelectronics MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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L6208Q STMicroelectronics L6208Q.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; VFQFPN48; 2.5A
Operating temperature: -25...125°C
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Type of integrated circuit: driver
Mounting: SMD
Application: universal
Kind of package: in-tray
Case: VFQFPN48
On-state resistance: 0.3Ω
Output current: 2.5A
Number of channels: 4
Supply voltage: 8...52V
Frequency: 0.1MHz
Produkt ist nicht verfügbar
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STD35P6LLF6 STD35P6LLF6 STMicroelectronics STD35P6LLF6.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1147 Stücke:
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35+2.09 EUR
60+1.2 EUR
68+1.06 EUR
82+0.87 EUR
Mindestbestellmenge: 35
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BAT30SWFILM BAT30SWFILM STMicroelectronics bat30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 3950 Stücke:
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625+0.11 EUR
705+0.1 EUR
804+0.089 EUR
867+0.083 EUR
1064+0.067 EUR
1180+0.061 EUR
3000+0.056 EUR
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HSP061-2M6 STMicroelectronics en.DM00047940.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 3A; unidirectional; UQFN6; Ch: 2; reel,tape
Kind of package: reel; tape
Version: ESD
Application: Ethernet
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Case: UQFN6
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Breakdown voltage: 6V
auf Bestellung 2317 Stücke:
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179+0.4 EUR
220+0.33 EUR
241+0.3 EUR
298+0.24 EUR
323+0.22 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 179
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SMAJ188CA-TR SMAJ188CA-TR STMicroelectronics SMAJxxX_ser.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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455+0.16 EUR
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SMAJ188A-TR SMAJ188A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 460 Stücke:
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193+0.37 EUR
246+0.29 EUR
290+0.25 EUR
355+0.2 EUR
447+0.16 EUR
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STW56N60M2 STMicroelectronics stw56n60m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
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STW56N60M2-4 STMicroelectronics stw56n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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STB140NF55T4 STB140NF55T4 STMicroelectronics stb140nf55.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
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STB141NF55 STMicroelectronics STx141ND55(-1)_Rev1_Aug2007.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 80A; 300W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 142nC
auf Bestellung 13000 Stücke:
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1000+2.23 EUR
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L5974D L5974D STMicroelectronics Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; SO8; SMD; 280kHz; -25÷125°C; tube
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: SO8
Mounting: SMD
Frequency: 280kHz
Operating temperature: -25...125°C
Kind of package: tube
Operating voltage: 4.4...36V DC
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L6384E L6384E STMicroelectronics L6384E.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; DIP8; 0.4A; 580V; Ch: 2; 400kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: DIP8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 14.6...16.6V
Produkt ist nicht verfügbar
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LM324N LM324N STMicroelectronics LM324N.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; DIP14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: quad; 4
Produkt ist nicht verfügbar
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STTH8S06D STMicroelectronics en.CD00180034.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
Produkt ist nicht verfügbar
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STGP3HF60HD pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8381251CC70500D2&compId=STGx3HF60hd.pdf?ci_sign=bb6fe0dd1647498e510241c883fdc7513f2fa398
STGP3HF60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGP8M120DF3 stgp8m120df3.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGP6M65DF2 en.DM00249613.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 21.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGP20H65FB2 stgp20h65fb2.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGP20M65DF2 en.DM00245294.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGP30H65F en.DM00102085.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGP4M65DF2 en.DM00248842.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: THT
Gate charge: 15.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STM32U5G9BJY6QTR stm32u5g9zj.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; WLCSP208; 1.71÷3.6VDC
Kind of architecture: Cortex M33
Case: WLCSP208
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: reel; tape
Mounting: SMD
Family: STM32U5
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 12bit D/A converters: 2
Number of 32bit timers: 4
Number of 16bit timers: 11
Number of 12bit A/D converters: 24
Number of inputs/outputs: 145
Memory: 3MB SRAM; 4Mb FLASH
Clock frequency: 160MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Interface: DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Produkt ist nicht verfügbar
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STM32U5A9BJY6QTR stm32u5a5aj.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; WLCSP208; 1.71÷3.6VDC
Kind of architecture: Cortex M33
Case: WLCSP208
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: reel; tape
Mounting: SMD
Family: STM32U5
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 12bit D/A converters: 2
Number of 32bit timers: 4
Number of 16bit timers: 11
Number of 12bit A/D converters: 24
Number of inputs/outputs: 145
Memory: 2.5MB SRAM; 4MB FLASH
Clock frequency: 160MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Produkt ist nicht verfügbar
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TIP29C tip29c.pdf
TIP29C
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
119+0.6 EUR
137+0.52 EUR
152+0.47 EUR
168+0.43 EUR
500+0.34 EUR
Mindestbestellmenge: 69
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TIP29A tip29c.pdf
TIP29A
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
136+0.53 EUR
147+0.49 EUR
162+0.44 EUR
175+0.41 EUR
Mindestbestellmenge: 68
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1.5KE15CA 1.5KE100A.pdf
1.5KE15CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 71A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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TSV6291AICT tsv6291a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SC70-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV6291AILT tsv6291a.pdf
TSV6291AILT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV6291ICT tsv6291.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SC70-5
Slew rate: 0.5V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV6291ILT tsv6291.pdf
TSV6291ILT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 0.5V/μs
Quiescent current: 38µA
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: micropower; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TDA7265 en.CD00000145.pdf
TDA7265
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
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2N2222A 15258.pdf
2N2222A
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 800mA; 500mW; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO18
Mounting: THT
Frequency: 250MHz
Power: 0.5W
Produkt ist nicht verfügbar
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TIP42C TIP42C.pdf
TIP42C
Hersteller: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 115V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220AB
Mounting: THT
Power dissipation: 65W
Kind of package: tube
Produkt ist nicht verfügbar
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ST7540 en.CD00096923.pdf
Hersteller: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 4.8kbps; TSSOP28; CMOS; 16MHz
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 4.8kbps
Mounting: SMD
Case: TSSOP28
Number of receivers: 1
Number of transmitters: 1
Operating temperature: -40...85°C
DC supply current: 5mA
Integrated circuit features: differential
Technology: CMOS
Frequency: 16MHz
auf Bestellung 10784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+14.67 EUR
Mindestbestellmenge: 50
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X-NUCLEO-IHM17M1 en.DM00477243.pdf
X-NUCLEO-IHM17M1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN233; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN233
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
Produkt ist nicht verfügbar
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X-NUCLEO-IHM04A1 X-NUCLEO-IHM04A1.pdf
X-NUCLEO-IHM04A1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
Produkt ist nicht verfügbar
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X-NUCLEO-IHM11M1 x-nucleo-ihm11m1.pdf
X-NUCLEO-IHM11M1
+1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN230; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN230
Associated circuits: STM32
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
Produkt ist nicht verfügbar
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X-NUCLEO-IHM13A1 X-NUCLEO-IHM13A1.pdf
X-NUCLEO-IHM13A1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN250; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN250
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brush DC motor driver
Produkt ist nicht verfügbar
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X-NUCLEO-IHM05A1 X-NUCLEO-IHM05A1.pdf
X-NUCLEO-IHM05A1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: L6208; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6208
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: stepper motor driver
Produkt ist nicht verfügbar
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X-NUCLEO-IHM09M2 x-nucleo-ihm09m2.pdf
Hersteller: STMicroelectronics
Category: Development kits - Unclassified
Description: X-NUCLEO-IHM09M2
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.91 EUR
Mindestbestellmenge: 2
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MMBTA42 MMBTA42.pdf
MMBTA42
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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L6208Q L6208Q.pdf
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; VFQFPN48; 2.5A
Operating temperature: -25...125°C
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Type of integrated circuit: driver
Mounting: SMD
Application: universal
Kind of package: in-tray
Case: VFQFPN48
On-state resistance: 0.3Ω
Output current: 2.5A
Number of channels: 4
Supply voltage: 8...52V
Frequency: 0.1MHz
Produkt ist nicht verfügbar
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STD35P6LLF6 STD35P6LLF6.pdf
STD35P6LLF6
Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
60+1.2 EUR
68+1.06 EUR
82+0.87 EUR
Mindestbestellmenge: 35
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BAT30SWFILM bat30.pdf
BAT30SWFILM
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
705+0.1 EUR
804+0.089 EUR
867+0.083 EUR
1064+0.067 EUR
1180+0.061 EUR
3000+0.056 EUR
Mindestbestellmenge: 625
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HSP061-2M6 en.DM00047940.pdf
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 3A; unidirectional; UQFN6; Ch: 2; reel,tape
Kind of package: reel; tape
Version: ESD
Application: Ethernet
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Case: UQFN6
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Breakdown voltage: 6V
auf Bestellung 2317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
220+0.33 EUR
241+0.3 EUR
298+0.24 EUR
323+0.22 EUR
360+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 179
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SMAJ188CA-TR description SMAJxxX_ser.pdf
SMAJ188CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 455
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SMAJ188A-TR SMAJxxX_ser.pdf
SMAJ188A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
246+0.29 EUR
290+0.25 EUR
355+0.2 EUR
447+0.16 EUR
Mindestbestellmenge: 193
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STW56N60M2 stw56n60m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STW56N60M2-4 stw56n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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STB140NF55T4 stb140nf55.pdf
STB140NF55T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
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STB141NF55 STx141ND55(-1)_Rev1_Aug2007.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 80A; 300W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 142nC
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1000+2.23 EUR
Mindestbestellmenge: 1000
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L5974D
L5974D
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; SO8; SMD; 280kHz; -25÷125°C; tube
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: SO8
Mounting: SMD
Frequency: 280kHz
Operating temperature: -25...125°C
Kind of package: tube
Operating voltage: 4.4...36V DC
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L6384E L6384E.pdf
L6384E
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; DIP8; 0.4A; 580V; Ch: 2; 400kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: DIP8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 14.6...16.6V
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LM324N LM324N.pdf
LM324N
Hersteller: STMicroelectronics
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; DIP14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: quad; 4
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STTH8S06D en.CD00180034.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
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