Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171814) > Seite 2860 nach 2864
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VIPER0PLDTR | STMicroelectronics |
![]() Description: IC: driver |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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T1235T-6I | STMicroelectronics |
![]() Description: Triac Type of thyristor: triac |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NUCLEO-L432KC | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board; Comp: STM32L432KCT6 Components: STM32L432KCT6 Kind of connector: pin strips; USB B micro Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Type of development kit: STM32 Kit contents: base board |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STW68N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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L6472PD | STMicroelectronics |
![]() Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45VDC; 800kHz; 55V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: PowerSO36 Output current: 3A DC supply current: 1.4mA Mounting: SMD Operating temperature: -40...150°C Operating voltage: 8...45V DC Frequency: 800kHz Supply voltage: 55V |
auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) |
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X-NUCLEO-67W61M1 | STMicroelectronics |
Category: Add-on boards Description: X-NUCLEO-67W61M1 |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ5.0A-TR | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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STB140NF75T4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
auf Bestellung 1095 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F207ZCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Memory: 128kB RAM; 256kB FLASH Operating temperature: -40...85°C Family: STM32F2 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG |
Produkt ist nicht verfügbar |
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STPS8H100D | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V Kind of package: tube Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Case: TO220AC Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.56V Load current: 8A Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
auf Bestellung 416 Stücke: Lieferzeit 14-21 Tag (e) |
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STM8L052R8T6TR | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Number of inputs/outputs: 54 Case: LQFP64 Kind of architecture: STM8 Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART Operating temperature: -40...85°C Number of 16bit timers: 5 Family: STM8L |
auf Bestellung 163950 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.0CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7.05V Max. forward impulse current: 61A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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LSM303AHTR | STMicroelectronics |
![]() Description: Sensor: accelerometer Type of sensor: accelerometer |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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X-NUCLEO-IKA01A1 | STMicroelectronics |
![]() Description: Expansion board; Comp: TSU104,TSZ124 Type of accessories for development kits: expansion board Components: TSU104; TSZ124 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips development kits accessories features: operational amplifier |
Produkt ist nicht verfügbar |
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TSZ124IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Bandwidth: 400kHz Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: TSSOP14 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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TSZ124IQ4T | STMicroelectronics |
![]() Description: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Bandwidth: 400kHz Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: QFN16 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TSZ124IYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Application: automotive industry Bandwidth: 400kHz Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: TSSOP14 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
X-NUCLEO-PLC01A1 | STMicroelectronics |
![]() Description: Expansion board; Comp: CLT01-38SQ7,VNI8200XP Type of accessories for development kits: expansion board Components: CLT01-38SQ7; VNI8200XP Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips development kits accessories features: I/O expander |
Produkt ist nicht verfügbar |
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STDS75DS2F | STMicroelectronics |
![]() Description: IC: temperature sensor |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STEVAL-POE003V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A Interface: Ethernet Kind of connector: power supply; RJ45 x2 Components: PM8804; PM8805 Additional functions: Power over Ethernet (PoE) Kit contents: prototype board Output voltage 3: 5V DC Output current: 20A Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SMAJ130CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 144V; 9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 130V Breakdown voltage: 144V Max. forward impulse current: 9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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STM32F103VEH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1 Family: STM32F1 Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Supply voltage: 2...3.6V DC Number of 12bit A/D converters: 16 Number of inputs/outputs: 80 Memory: 64kB SRAM; 512kB FLASH Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB Clock frequency: 72MHz Kind of architecture: Cortex M3 Integrated circuit features: DMA; internal temperature sensor; PoR; PWM Case: LFBGA100 Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller |
Produkt ist nicht verfügbar |
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P6KE30CA | STMicroelectronics |
![]() Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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STD26P3LLH6 | STMicroelectronics |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TS391AILT | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; SOT23; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: SOT23 Operating temperature: -40...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Input bias current: 0.25µA |
Produkt ist nicht verfügbar |
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ISM330DLCTR | STMicroelectronics |
![]() Description: Sensor: accelerometer; SMD,SMT; -40÷85°C Type of sensor: accelerometer Mounting: SMD; SMT Operating temperature: -40...85°C |
auf Bestellung 20161 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH810D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Reverse recovery time: 47ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Max. forward voltage: 1.3V Max. forward impulse current: 80A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH810FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Reverse recovery time: 47ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FPAC Max. forward voltage: 2V Max. load current: 30A Max. forward impulse current: 60A Leakage current: 5µA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STTH810G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Reverse recovery time: 47ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 2V Max. load current: 30A Max. forward impulse current: 60A Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STTH810DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Reverse recovery time: 85ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220ACIns Max. forward voltage: 2V Max. load current: 20A Max. forward impulse current: 60A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STTH810GY-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Reverse recovery time: 47ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 2V Max. load current: 30A Max. forward impulse current: 60A Leakage current: 5µA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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LD1117S33C | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Manufacturer series: LD1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 0...15V |
Produkt ist nicht verfügbar |
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STP8NM50N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 790mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK70Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 115W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.7A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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L6201PSTR | STMicroelectronics |
![]() Description: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: PowerSO20 Operating temperature: -25...125°C Kind of package: reel; tape Kind of integrated circuit: motor controller On-state resistance: 0.3Ω Output current: 1A Topology: H-bridge Supply voltage: 12...48V Frequency: 0.1MHz |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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ST33HTPH2X32AHD8 | STMicroelectronics |
Category: Unclassified Description: ST33HTPH2X32AHD8 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM103WIDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 900kHz; 3÷32V; Ch: 2; SO8; reel,tape Operating temperature: -40...105°C Mounting: SMT Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SO8 Input offset voltage: 1mV Slew rate: 0.4V/μs Number of channels: 2 Operating voltage: 3...32V Bandwidth: 0.9MHz |
auf Bestellung 2398 Stücke: Lieferzeit 14-21 Tag (e) |
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TS3021AILT | STMicroelectronics |
![]() Description: IC: comparator; fast; Cmp: 1; 2÷5V; SMT; SOT23; reel,tape; Iio: 100nA Type of integrated circuit: comparator Kind of comparator: fast Number of comparators: 1 Operating voltage: 2...5V Mounting: SMT Case: SOT23 Operating temperature: -40...125°C Input offset voltage: 4mV Kind of package: reel; tape Kind of output: push-pull Input offset current: 100nA Input bias current: 0.3µA |
Produkt ist nicht verfügbar |
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LF120ABDT-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 12V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: LFXX Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 13...16V Kind of package: reel; tape |
auf Bestellung 777 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH100N65G2-7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 95A; Idm: 260A; 360W; H2PAK7 Mounting: SMD Case: H2PAK7 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 162nC On-state resistance: 26mΩ Drain current: 95A Drain-source voltage: 650V Power dissipation: 360W Pulsed drain current: 260A |
Produkt ist nicht verfügbar |
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STF33N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; 600V; 26A; 35W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Drain-source voltage: 600V Drain current: 26A Power dissipation: 35W Case: TO220FP Gate-source voltage: 25V On-state resistance: 108mΩ Mounting: THT Gate charge: 45.5nC Kind of channel: enhancement |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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X-NUCLEO-IHM04A1 | STMicroelectronics |
![]() Description: Expansion board; Comp: L6206; 8÷50VDC Type of accessories for development kits: expansion board Components: L6206 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips; screw terminal Supply voltage: 8...50V DC development kits accessories features: brush DC motor driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
M95640-DFDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: TSSOP8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-DFMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: MLP8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-DFMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: SO8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-RDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: TSSOP8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-RMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; MLP8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: MLP8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-RMN6P | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: SO8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: SO8 Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
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M95640-DRMN3TP/K | STMicroelectronics |
![]() Description: IC: EEPROM memory; 8kx8bit; 1.8÷5.5V; 20MHz; 20MHz; SOIC8; serial Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Operating voltage: 1.8...5.5V Clock frequency: 20MHz Memory organisation: 8kx8bit Frequency: 20MHz |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N50M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; N; 500V; 13A; 110W; DPAK; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 500V Drain current: 13A Power dissipation: 110W Case: DPAK Gate-source voltage: 25V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 19.5nC Kind of channel: enhancement Electrical mounting: SMT Technology: MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA30IH65DF | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 30A; 180W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 180W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 80nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STGWA30HP65FB2 | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STGWA30H60DFB | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STGWA30M65DF2 | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32L4R5QII6P | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; UFBGA132; 1.71÷3.6VDC Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG Mounting: SMD Case: UFBGA132 Type of integrated circuit: STM32 ARM microcontroller Family: STM32L4+ Supply voltage: 1.71...3.6V DC Number of inputs/outputs: 110 Memory: 640kB SRAM; 2MB FLASH Clock frequency: 120MHz Kind of architecture: Cortex M4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STM32L4R7VIT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.71÷3.6VDC Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG Mounting: SMD Case: LQFP100 Type of integrated circuit: STM32 ARM microcontroller Family: STM32L4+ Supply voltage: 1.71...3.6V DC Number of inputs/outputs: 83 Memory: 640kB SRAM; 2MB FLASH Clock frequency: 120MHz Kind of architecture: Cortex M4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STTH3006PI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; DOP3I; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: DOP3I Max. forward voltage: 1.1V Reverse recovery time: 50ns |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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STM8L151K6T6TR | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP32 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI; USART Integrated circuit features: Beeper; IWDG; RTC; WWDG Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH Number of 12bit A/D converters: 22 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Family: STM8L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
VIPER0PLDTR |
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auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.89 EUR |
T1235T-6I |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
NUCLEO-L432KC |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L432KCT6
Components: STM32L432KCT6
Kind of connector: pin strips; USB B micro
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Type of development kit: STM32
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L432KCT6
Components: STM32L432KCT6
Kind of connector: pin strips; USB B micro
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Type of development kit: STM32
Kit contents: base board
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
STW68N65DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
L6472PD |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45VDC; 800kHz; 55V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
DC supply current: 1.4mA
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...45V DC
Frequency: 800kHz
Supply voltage: 55V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45VDC; 800kHz; 55V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
DC supply current: 1.4mA
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...45V DC
Frequency: 800kHz
Supply voltage: 55V
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.01 EUR |
12+ | 6.09 EUR |
31+ | 5.86 EUR |
X-NUCLEO-67W61M1 |
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 72.56 EUR |
SMCJ5.0A-TR | ![]() |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
241+ | 0.3 EUR |
254+ | 0.28 EUR |
STB100NF04T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.5 EUR |
24+ | 3.06 EUR |
26+ | 2.83 EUR |
STB140NF75T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.85 EUR |
38+ | 1.89 EUR |
40+ | 1.79 EUR |
STM32F207ZCT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Memory: 128kB RAM; 256kB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Memory: 128kB RAM; 256kB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPS8H100D |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO220AC
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.56V
Load current: 8A
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO220AC
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.56V
Load current: 8A
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
96+ | 0.75 EUR |
110+ | 0.65 EUR |
129+ | 0.56 EUR |
131+ | 0.55 EUR |
STM8L052R8T6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 54
Case: LQFP64
Kind of architecture: STM8
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART
Operating temperature: -40...85°C
Number of 16bit timers: 5
Family: STM8L
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 54
Case: LQFP64
Kind of architecture: STM8
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART
Operating temperature: -40...85°C
Number of 16bit timers: 5
Family: STM8L
auf Bestellung 163950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.46 EUR |
SMBJ6.0CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
207+ | 0.35 EUR |
241+ | 0.3 EUR |
271+ | 0.26 EUR |
305+ | 0.23 EUR |
642+ | 0.11 EUR |
LSM303AHTR |
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Hersteller: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer
Type of sensor: accelerometer
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer
Type of sensor: accelerometer
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8000+ | 3.33 EUR |
X-NUCLEO-IKA01A1 |
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Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: TSU104,TSZ124
Type of accessories for development kits: expansion board
Components: TSU104; TSZ124
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: operational amplifier
Category: Add-on boards
Description: Expansion board; Comp: TSU104,TSZ124
Type of accessories for development kits: expansion board
Components: TSU104; TSZ124
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: operational amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSZ124IPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSZ124IQ4T |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: QFN16
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: QFN16
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSZ124IYPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Application: automotive industry
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Application: automotive industry
Bandwidth: 400kHz
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
X-NUCLEO-PLC01A1 |
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Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: CLT01-38SQ7,VNI8200XP
Type of accessories for development kits: expansion board
Components: CLT01-38SQ7; VNI8200XP
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: I/O expander
Category: Add-on boards
Description: Expansion board; Comp: CLT01-38SQ7,VNI8200XP
Type of accessories for development kits: expansion board
Components: CLT01-38SQ7; VNI8200XP
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: I/O expander
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STDS75DS2F |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.5 EUR |
STEVAL-POE003V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ130CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 144V; 9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 144V; 9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32F103VEH6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1
Family: STM32F1
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 16
Number of inputs/outputs: 80
Memory: 64kB SRAM; 512kB FLASH
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Clock frequency: 72MHz
Kind of architecture: Cortex M3
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Case: LFBGA100
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1
Family: STM32F1
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 16
Number of inputs/outputs: 80
Memory: 64kB SRAM; 512kB FLASH
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Clock frequency: 72MHz
Kind of architecture: Cortex M3
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Case: LFBGA100
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Produkt ist nicht verfügbar
Im Einkaufswagen
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P6KE30CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
135+ | 0.53 EUR |
STD26P3LLH6 |
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Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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TS391AILT |
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Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; SOT23; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: SOT23
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.25µA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; SOT23; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: SOT23
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.25µA
Produkt ist nicht verfügbar
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ISM330DLCTR |
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Hersteller: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
Operating temperature: -40...85°C
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
Operating temperature: -40...85°C
auf Bestellung 20161 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 7.35 EUR |
STTH810D |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
71+ | 1.02 EUR |
97+ | 0.74 EUR |
100+ | 0.72 EUR |
STTH810FP |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: tube
Produkt ist nicht verfügbar
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STTH810G-TR |
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Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STTH810DI |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 85ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 60A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 85ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 60A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STTH810GY-TR |
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Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Reverse recovery time: 47ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Max. forward impulse current: 60A
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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LD1117S33C |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: LD1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 0...15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: LD1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 0...15V
Produkt ist nicht verfügbar
Im Einkaufswagen
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STP8NM50N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
STP9NK70Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 115W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 115W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
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L6201PSTR |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: PowerSO20
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Output current: 1A
Topology: H-bridge
Supply voltage: 12...48V
Frequency: 0.1MHz
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: PowerSO20
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Output current: 1A
Topology: H-bridge
Supply voltage: 12...48V
Frequency: 0.1MHz
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.91 EUR |
11+ | 6.64 EUR |
12+ | 6.28 EUR |
ST33HTPH2X32AHD8 |
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 3.66 EUR |
TSM103WIDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; 3÷32V; Ch: 2; SO8; reel,tape
Operating temperature: -40...105°C
Mounting: SMT
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO8
Input offset voltage: 1mV
Slew rate: 0.4V/μs
Number of channels: 2
Operating voltage: 3...32V
Bandwidth: 0.9MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; 3÷32V; Ch: 2; SO8; reel,tape
Operating temperature: -40...105°C
Mounting: SMT
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO8
Input offset voltage: 1mV
Slew rate: 0.4V/μs
Number of channels: 2
Operating voltage: 3...32V
Bandwidth: 0.9MHz
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
85+ | 0.85 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
250+ | 0.62 EUR |
TS3021AILT |
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Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 2÷5V; SMT; SOT23; reel,tape; Iio: 100nA
Type of integrated circuit: comparator
Kind of comparator: fast
Number of comparators: 1
Operating voltage: 2...5V
Mounting: SMT
Case: SOT23
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Kind of output: push-pull
Input offset current: 100nA
Input bias current: 0.3µA
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 2÷5V; SMT; SOT23; reel,tape; Iio: 100nA
Type of integrated circuit: comparator
Kind of comparator: fast
Number of comparators: 1
Operating voltage: 2...5V
Mounting: SMT
Case: SOT23
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Kind of output: push-pull
Input offset current: 100nA
Input bias current: 0.3µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LF120ABDT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: LFXX
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 13...16V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: LFXX
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 13...16V
Kind of package: reel; tape
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
106+ | 0.68 EUR |
114+ | 0.63 EUR |
191+ | 0.37 EUR |
202+ | 0.35 EUR |
SCTH100N65G2-7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 95A; Idm: 260A; 360W; H2PAK7
Mounting: SMD
Case: H2PAK7
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 162nC
On-state resistance: 26mΩ
Drain current: 95A
Drain-source voltage: 650V
Power dissipation: 360W
Pulsed drain current: 260A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 95A; Idm: 260A; 360W; H2PAK7
Mounting: SMD
Case: H2PAK7
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 162nC
On-state resistance: 26mΩ
Drain current: 95A
Drain-source voltage: 650V
Power dissipation: 360W
Pulsed drain current: 260A
Produkt ist nicht verfügbar
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STF33N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: 25V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: 25V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 2.67 EUR |
200+ | 2.42 EUR |
X-NUCLEO-IHM04A1 |
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Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
Produkt ist nicht verfügbar
Im Einkaufswagen
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M95640-DFDW6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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M95640-DFMC6TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: MLP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: MLP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M95640-DFMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
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M95640-RDW6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
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M95640-RMC6TG |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; MLP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: MLP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; MLP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: MLP8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
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M95640-RMN6P |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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M95640-RMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SO8
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
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M95640-DRMN3TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kx8bit; 1.8÷5.5V; 20MHz; 20MHz; SOIC8; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kx8bit; 1.8÷5.5V; 20MHz; 20MHz; SOIC8; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Frequency: 20MHz
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.78 EUR |
STD16N50M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 13A; 110W; DPAK; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 25V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 13A; 110W; DPAK; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 25V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.06 EUR |
STGWA30IH65DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 180W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 180W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
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STGWA30HP65FB2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA30H60DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STGWA30M65DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32L4R5QII6P |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; UFBGA132; 1.71÷3.6VDC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG
Mounting: SMD
Case: UFBGA132
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32L4+
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 110
Memory: 640kB SRAM; 2MB FLASH
Clock frequency: 120MHz
Kind of architecture: Cortex M4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; UFBGA132; 1.71÷3.6VDC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG
Mounting: SMD
Case: UFBGA132
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32L4+
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 110
Memory: 640kB SRAM; 2MB FLASH
Clock frequency: 120MHz
Kind of architecture: Cortex M4
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STM32L4R7VIT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG
Mounting: SMD
Case: LQFP100
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32L4+
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 83
Memory: 640kB SRAM; 2MB FLASH
Clock frequency: 120MHz
Kind of architecture: Cortex M4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; MMC; QSPI; SAI; SD; SPI; USART; USB OTG
Mounting: SMD
Case: LQFP100
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32L4+
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 83
Memory: 640kB SRAM; 2MB FLASH
Clock frequency: 120MHz
Kind of architecture: Cortex M4
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STTH3006PI |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; DOP3I; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: DOP3I
Max. forward voltage: 1.1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; DOP3I; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: DOP3I
Max. forward voltage: 1.1V
Reverse recovery time: 50ns
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.21 EUR |
21+ | 3.56 EUR |
22+ | 3.36 EUR |
STM8L151K6T6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 12bit A/D converters: 22
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8L
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 12bit A/D converters: 22
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8L
Produkt ist nicht verfügbar
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