Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (129398) > Seite 333 nach 2157
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STD65N3LLH5 | STMicroelectronics |
Description: MOSFET N CH 30V 65A DPAK |
Produkt ist nicht verfügbar |
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STD9NM40N | STMicroelectronics |
Description: MOSFET N-CH 400V 5.6A DPAKInput Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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STTH810GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1000V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
Produkt ist nicht verfügbar |
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| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
Produkt ist nicht verfügbar |
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STN9360 | STMicroelectronics |
Description: TRANS PNP 600V 0.5A SOT-223Power - Max: 1.6 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: SOT-223 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 5057 Stücke: Lieferzeit 10-14 Tag (e) |
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STTH1003SBY-TR | STMicroelectronics |
Description: DIODE STANDARD 300V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Qualification: AEC-Q101 |
auf Bestellung 4962 Stücke: Lieferzeit 10-14 Tag (e) |
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STPS20L60CGY-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 60V 10A D2PAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 350 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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STF15N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 14A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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STI34N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 28A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB15N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 14A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP15N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 14A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
Produkt ist nicht verfügbar |
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STPSC4H065D | STMicroelectronics |
Description: DIODE SCHOTTKY 650V 4A TO220AC |
auf Bestellung 1178 Stücke: Lieferzeit 10-14 Tag (e) |
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STPS340SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 8025 Stücke: Lieferzeit 10-14 Tag (e) |
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STPS340UY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC4H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC8H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC8H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC10H065D | STMicroelectronics |
Description: 650 V 10 A power Schottky silicoPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC20H065CW | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 650V TO247 |
auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC8H065D | STMicroelectronics |
Description: DIODE SCHOTTKY 650V 8A TO220AC |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 4553 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC4H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 926 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC8H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 13528 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC8H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
Produkt ist nicht verfügbar |
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EV-VND5E160AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5E160AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E160AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
Produkt ist nicht verfügbar |
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EV-VND5T100AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5T100AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5T100AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
Produkt ist nicht verfügbar |
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EV-VND5E050AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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EV-VND5E160J | STMicroelectronics |
Description: EVAL BOARD FOR VND5E160JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VND5E160J Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
Produkt ist nicht verfügbar |
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EV-VN5E050J | STMicroelectronics |
Description: BOARD EVAL FOR VN5E050JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VN5E050J Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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EV-VN5E050AJ | STMicroelectronics |
Description: BOARD EVAL FOR VN5E050AJ |
Produkt ist nicht verfügbar |
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EV-VN5E025AJ | STMicroelectronics |
Description: BOARD EVAL FOR VN5E025AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VN5E025AJ Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active |
Produkt ist nicht verfügbar |
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EV-VND5E050K | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050K Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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EV-VND5E050J | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050J Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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EV-VN5016AJ | STMicroelectronics |
Description: EVAL BOARD FOR VN5016AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VN5016AJ Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active |
Produkt ist nicht verfügbar |
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EV-VNQ5E050AK | STMicroelectronics |
Description: EVAL BOARD FOR VNQ5E050AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VNQ5E050AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) |
Produkt ist nicht verfügbar |
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EV-VNQ5E160AK | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E160AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E160AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) |
Produkt ist nicht verfügbar |
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EV-VND5E025AK | STMicroelectronics |
Description: EVAL BOARD FOR VND5E025AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VND5E025AK Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
Produkt ist nicht verfügbar |
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EV-VND5T035AK | STMicroelectronics |
Description: EVAL BOARD FOR VND5T035AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VND5T035AK Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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EV-VNQ5027AK | STMicroelectronics |
Description: EVAL BOARD FOR VNQ5027AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: VNQ5027AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) |
Produkt ist nicht verfügbar |
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EV-VNQ5E050K | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E050KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E050K Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Part Status: Active |
Produkt ist nicht verfügbar |
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EV-VNQ5E160K | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E160KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E160K Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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EMIF03-SIM05F3 | STMicroelectronics |
Description: FILTER RC(PI) 47 OHMS ESD SMD Number of Channels: 3 Part Status: Obsolete ESD Protection: Yes Resistance - Channel (Ohms): 47, 100 Technology: RC (Pi) Applications: Data Lines for Mobile Devices Filter Order: 2nd Height: 0.022" (0.55mm) Values: R = 47Ohms, 100Ohms, C = 12pF Operating Temperature: -30°C ~ 85°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm) Package / Case: 9-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
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74LCX00YTTR | STMicroelectronics |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 10 µA Qualification: AEC-Q100 |
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74LCX07YMTR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 3.6V 14-SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
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74LCX07YTTR | STMicroelectronics |
Description: IC BUFF NON-INVERT 3.6V 14-TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 14-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
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74LCX125YMTR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 3.6V 14-SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHC14YMTR | STMicroelectronics |
Description: IC INVERT SCHMITT 6CH 1-INP 14SOFeatures: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-SO Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
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74VHC14YTTR | STMicroelectronics |
Description: IC INVERTER 6CH 1-INP 14TSSOPFeatures: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
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L6482HTR | STMicroelectronics |
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (4) Voltage - Supply: 3.3V, 5V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: 38-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/16 Part Status: Active |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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LDK120C11R | STMicroelectronics |
Description: IC REG LIN 1.1V 200MA SOT323-5Supplier Device Package: SOT-323-5 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) Current - Supply (Max): 100 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.3V @ 200mA PSRR: 55dB (120Hz ~ 10kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.1V |
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LDK120C12R | STMicroelectronics |
Description: IC REG LIN 1.2V 200MA SOT-323-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
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LDK120C15R | STMicroelectronics |
Description: IC REG LIN 1.5V 200MA SOT323-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LDK120C18R | STMicroelectronics |
Description: IC REG LIN 1.8V 200MA SOT-323-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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LDK120C25R | STMicroelectronics |
Description: IC REG LIN 2.5V 200MA SOT323-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
auf Bestellung 1441 Stücke: Lieferzeit 10-14 Tag (e) |
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LDK120C28R | STMicroelectronics |
Description: IC REG LIN 2.8V 200MA SOT323-5Current - Supply (Max): 100 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.3V @ 200mA PSRR: 55dB (120Hz ~ 10kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: SOT-323-5 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
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| STD65N3LLH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD9NM40N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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Stück im Wert von UAH
| STTH810GY-TR |
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Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| STL10DN15F3 |
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Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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| STL10DN15F3 |
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Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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| STN9360 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 600V 0.5A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 5057 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| STTH1003SBY-TR |
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Hersteller: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| STPS20L60CGY-TR |
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Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.75 EUR |
| 100+ | 1.37 EUR |
| STF15N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STI34N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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| STB15N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.96 EUR |
| 50+ | 4.7 EUR |
| 100+ | 4.29 EUR |
| STL10DN15F3 |
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Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPSC4H065D |
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Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A TO220AC
Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STPS340SY |
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Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 8025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| STPS340UY |
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Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| STPSC10H065B-TR |
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Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.53 EUR |
| STPSC10H065G-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPSC4H065B-TR |
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Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPSC8H065B-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.62 EUR |
| STPSC8H065G-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPSC10H065D |
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Hersteller: STMicroelectronics
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPSC20H065CW |
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Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 650V TO247
Description: DIODE ARRAY SCHOTTKY 650V TO247
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STPSC8H065D |
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Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 8A TO220AC
Description: DIODE SCHOTTKY 650V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STPSC10H065G-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.62 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.81 EUR |
| STPSC10H065B-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 4553 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.86 EUR |
| 10+ | 3.16 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.87 EUR |
| STPSC4H065B-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.8 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.56 EUR |
| STPSC8H065B-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 13528 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 10+ | 2.83 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.98 EUR |
| STPSC8H065G-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5E160AJ |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5T100AJ |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5E050AJ |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.28 EUR |
| EV-VND5E160J |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VN5E050J |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.07 EUR |
| EV-VN5E050AJ |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E050AJ
Description: BOARD EVAL FOR VN5E050AJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VN5E025AJ |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5E050K |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.41 EUR |
| EV-VND5E050J |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.28 EUR |
| EV-VN5016AJ |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VN5016AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VN5016AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Description: EVAL BOARD FOR VN5016AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VN5016AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VNQ5E050AK |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VNQ5E050AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VNQ5E050AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Description: EVAL BOARD FOR VNQ5E050AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VNQ5E050AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VNQ5E160AK |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E160AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Description: BOARD EVAL FOR VNQ5E160AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5E025AK |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VND5E025AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E025AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: EVAL BOARD FOR VND5E025AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E025AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VND5T035AK |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VND5T035AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5T035AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: EVAL BOARD FOR VND5T035AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5T035AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.11 EUR |
| EV-VNQ5027AK |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VNQ5027AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VNQ5027AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Description: EVAL BOARD FOR VNQ5027AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VNQ5027AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VNQ5E050K |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
Description: BOARD EVAL FOR VNQ5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EV-VNQ5E160K |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E160K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
Description: BOARD EVAL FOR VNQ5E160K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.18 EUR |
| EMIF03-SIM05F3 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 47 OHMS ESD SMD
Number of Channels: 3
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 47, 100
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Height: 0.022" (0.55mm)
Values: R = 47Ohms, 100Ohms, C = 12pF
Operating Temperature: -30°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm)
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: FILTER RC(PI) 47 OHMS ESD SMD
Number of Channels: 3
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 47, 100
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Height: 0.022" (0.55mm)
Values: R = 47Ohms, 100Ohms, C = 12pF
Operating Temperature: -30°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm)
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX00YTTR |
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Hersteller: STMicroelectronics
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX07YMTR |
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Hersteller: STMicroelectronics
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX07YTTR |
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Hersteller: STMicroelectronics
Description: IC BUFF NON-INVERT 3.6V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUFF NON-INVERT 3.6V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX125YMTR |
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Hersteller: STMicroelectronics
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.47 EUR |
| 74VHC14YMTR |
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Hersteller: STMicroelectronics
Description: IC INVERT SCHMITT 6CH 1-INP 14SO
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC INVERT SCHMITT 6CH 1-INP 14SO
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC14YTTR |
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Hersteller: STMicroelectronics
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| L6482HTR |
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Hersteller: STMicroelectronics
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/16
Part Status: Active
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/16
Part Status: Active
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| LDK120C11R |
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Hersteller: STMicroelectronics
Description: IC REG LIN 1.1V 200MA SOT323-5
Supplier Device Package: SOT-323-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 200mA
PSRR: 55dB (120Hz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.1V
Description: IC REG LIN 1.1V 200MA SOT323-5
Supplier Device Package: SOT-323-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 200mA
PSRR: 55dB (120Hz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LDK120C12R |
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Hersteller: STMicroelectronics
Description: IC REG LIN 1.2V 200MA SOT-323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.2V 200MA SOT-323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Produkt ist nicht verfügbar
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| LDK120C15R |
![]() |
Hersteller: STMicroelectronics
Description: IC REG LIN 1.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LDK120C18R |
![]() |
Hersteller: STMicroelectronics
Description: IC REG LIN 1.8V 200MA SOT-323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.8V 200MA SOT-323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 38+ | 0.47 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.33 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| LDK120C25R |
![]() |
Hersteller: STMicroelectronics
Description: IC REG LIN 2.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 2.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
auf Bestellung 1441 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 25+ | 0.71 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| LDK120C28R |
![]() |
Hersteller: STMicroelectronics
Description: IC REG LIN 2.8V 200MA SOT323-5
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 200mA
PSRR: 55dB (120Hz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-323-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC REG LIN 2.8V 200MA SOT323-5
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 200mA
PSRR: 55dB (120Hz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-323-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
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