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STB43N65M5 STB43N65M5 STMicroelectronics en.DM00217114.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+12.38 EUR
2000+ 11.6 EUR
Mindestbestellmenge: 1000
STF23N80K5 STF23N80K5 STMicroelectronics en.DM00225383.pdf Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 978 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.66 EUR
50+ 10.02 EUR
100+ 8.59 EUR
500+ 7.63 EUR
Mindestbestellmenge: 3
STFU28N65M2 STFU28N65M2 STMicroelectronics en.DM00167986.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
STGIPQ3H60T-HL STGIPQ3H60T-HL STMicroelectronics en.DM00149104.pdf Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.22 EUR
10+ 20.97 EUR
100+ 17.37 EUR
Mindestbestellmenge: 2
STGIPQ3H60T-HZ STGIPQ3H60T-HZ STMicroelectronics en.DM00149104.pdf Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Produkt ist nicht verfügbar
STGIPQ5C60T-HZ STGIPQ5C60T-HZ STMicroelectronics en.DM00131764.pdf Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 345 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.14 EUR
15+ 21.55 EUR
105+ 17.96 EUR
Mindestbestellmenge: 2
STHVDAC-253MTGF3 STHVDAC-253MTGF3 STMicroelectronics Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
auf Bestellung 2304 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.46 EUR
10+ 3.09 EUR
25+ 2.93 EUR
100+ 2.4 EUR
250+ 2.25 EUR
500+ 1.99 EUR
1000+ 1.57 EUR
Mindestbestellmenge: 8
STHVDAC-253MTGF3 STHVDAC-253MTGF3 STMicroelectronics Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
Produkt ist nicht verfügbar
STL135N8F7AG STL135N8F7AG STMicroelectronics en.DM00224699.pdf Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8796 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.51 EUR
10+ 6.31 EUR
100+ 5.1 EUR
500+ 4.53 EUR
1000+ 3.88 EUR
Mindestbestellmenge: 4
STL135N8F7AG STL135N8F7AG STMicroelectronics en.DM00224699.pdf Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.66 EUR
6000+ 3.51 EUR
Mindestbestellmenge: 3000
STP23N80K5 STP23N80K5 STMicroelectronics en.DM00235958.pdf Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 1105 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.1 EUR
50+ 10.38 EUR
100+ 8.9 EUR
500+ 7.91 EUR
1000+ 6.77 EUR
Mindestbestellmenge: 2
STPSC10H065GY-TR STPSC10H065GY-TR STMicroelectronics en.DM00123401.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1922 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.87 EUR
10+ 7.44 EUR
100+ 6.02 EUR
500+ 5.35 EUR
Mindestbestellmenge: 3
STPSC10H065GY-TR STPSC10H065GY-TR STMicroelectronics en.DM00123401.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+4.58 EUR
Mindestbestellmenge: 1000
STPTIC-15G2C5 STPTIC-15G2C5 STMicroelectronics Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
STPTIC-15G2C5 STPTIC-15G2C5 STMicroelectronics Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
STPTIC-33G2C5 STPTIC-33G2C5 STMicroelectronics en.DM00217090.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
STPTIC-39G2C5 STPTIC-39G2C5 STMicroelectronics en.DM00214174.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
auf Bestellung 2654 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.25 EUR
10+ 2.88 EUR
25+ 2.6 EUR
100+ 2.27 EUR
250+ 2 EUR
500+ 1.76 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 8
STPTIC-47G2C5 STPTIC-47G2C5 STMicroelectronics en.DM00217233.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.09 EUR
10+ 2.74 EUR
25+ 2.47 EUR
Mindestbestellmenge: 9
STPTIC-56G2C5 STPTIC-56G2C5 STMicroelectronics Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
STPTIC-68G2C5 STPTIC-68G2C5 STMicroelectronics en.DM00214259.pdf Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
STTH30ACS06W STTH30ACS06W STMicroelectronics en.DM00231434.pdf Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 215 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.43 EUR
10+ 4.51 EUR
100+ 3.59 EUR
Mindestbestellmenge: 5
STW23N80K5 STW23N80K5 STMicroelectronics en.DM00225098.pdf Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.42 EUR
30+ 12.22 EUR
120+ 10.47 EUR
510+ 9.31 EUR
Mindestbestellmenge: 2
STW65N80K5 STW65N80K5 STMicroelectronics en.DM00175110.pdf Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
auf Bestellung 463 Stücke:
Lieferzeit 21-28 Tag (e)
1+42.85 EUR
30+ 34.69 EUR
120+ 32.65 EUR
STW88N65M5-4 STW88N65M5-4 STMicroelectronics en.DM00177200.pdf Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 585 Stücke:
Lieferzeit 21-28 Tag (e)
1+41.05 EUR
30+ 33.24 EUR
120+ 31.29 EUR
510+ 28.35 EUR
STWA40N95K5 STWA40N95K5 STMicroelectronics en.DM00220988.pdf Description: MOSFET N-CH 950V 38A TO247-3
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1+45.6 EUR
ESDAVLC5-1BF4 ESDAVLC5-1BF4 STMicroelectronics en.DM00223541.pdf Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 133641 Stücke:
Lieferzeit 21-28 Tag (e)
44+0.6 EUR
63+ 0.41 EUR
129+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.094 EUR
Mindestbestellmenge: 44
SM30T42AY SM30T42AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T42CAY SM30T42CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6379 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.38 EUR
10+ 2.77 EUR
100+ 2.16 EUR
500+ 1.83 EUR
1000+ 1.49 EUR
Mindestbestellmenge: 8
SM30T47AY SM30T47AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.25 EUR
10+ 2.65 EUR
100+ 2.07 EUR
500+ 1.75 EUR
1000+ 1.43 EUR
Mindestbestellmenge: 8
SM30T47CAY SM30T47CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2364 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.38 EUR
10+ 2.77 EUR
100+ 2.16 EUR
500+ 1.83 EUR
1000+ 1.49 EUR
Mindestbestellmenge: 8
SM30T56AY SM30T56AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 2490 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.2 EUR
100+ 2.5 EUR
500+ 2.06 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 8
SM30T56CAY SM30T56CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2419 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.64 EUR
10+ 3.26 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 8
STD10P10F6 STD10P10F6 STMicroelectronics en.DM00116775.pdf Description: MOSFET P-CH 100V 10A DPAK
Produkt ist nicht verfügbar
STD28P3LLH6AG STD28P3LLH6AG STMicroelectronics DM00231309.pdf Description: MOSFET P-CH 30V 12A
Produkt ist nicht verfügbar
STD30N6LF6AG STD30N6LF6AG STMicroelectronics en.DM00210369.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
auf Bestellung 2420 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
10+ 2.87 EUR
100+ 2.24 EUR
500+ 1.85 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 9
STD47N10F7AG STD47N10F7AG STMicroelectronics en.DM00148114.pdf Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Produkt ist nicht verfügbar
STD64N4F6AG STD64N4F6AG STMicroelectronics en.DM00185474.pdf Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1460 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.73 EUR
11+ 2.46 EUR
100+ 1.91 EUR
500+ 1.58 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
STH140N6F7-2 STH140N6F7-2 STMicroelectronics STH140N6F7-2%2C6.pdf Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
STH145N8F7-2AG STH145N8F7-2AG STMicroelectronics en.DM00189800.pdf Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1775 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.85 EUR
10+ 6.58 EUR
100+ 5.33 EUR
500+ 4.73 EUR
Mindestbestellmenge: 4
STH6N95K5-2 STH6N95K5-2 STMicroelectronics en.DM00156940.pdf Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 3532 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.94 EUR
10+ 5.76 EUR
100+ 4.59 EUR
500+ 3.88 EUR
Mindestbestellmenge: 4
STPS4S200S STPS4S200S STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
STPS5L60U STPS5L60U STMicroelectronics en.CD00002924.pdf Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 1930 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
20+ 1.3 EUR
100+ 0.9 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
ESDAVLC5-1BF4 ESDAVLC5-1BF4 STMicroelectronics en.DM00223541.pdf Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
15000+0.078 EUR
30000+ 0.077 EUR
75000+ 0.069 EUR
105000+ 0.06 EUR
Mindestbestellmenge: 15000
SM30T42AY SM30T42AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T42CAY SM30T42CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.4 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 2500
SM30T47AY SM30T47AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T47CAY SM30T47CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T56AY SM30T56AY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SM30T56CAY SM30T56CAY STMicroelectronics en.DM00035136.pdf Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STD10P10F6 STD10P10F6 STMicroelectronics en.DM00116775.pdf Description: MOSFET P-CH 100V 10A DPAK
Produkt ist nicht verfügbar
STD28P3LLH6AG STD28P3LLH6AG STMicroelectronics DM00231309.pdf Description: MOSFET P-CH 30V 12A
Produkt ist nicht verfügbar
STD30N6LF6AG STD30N6LF6AG STMicroelectronics en.DM00210369.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Produkt ist nicht verfügbar
STD47N10F7AG STD47N10F7AG STMicroelectronics en.DM00148114.pdf Description: MOSFET N-CH 100V 45A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Produkt ist nicht verfügbar
STD64N4F6AG STD64N4F6AG STMicroelectronics en.DM00185474.pdf Description: MOSFET N-CH 40V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH145N8F7-2AG STH145N8F7-2AG STMicroelectronics en.DM00189800.pdf Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+4.05 EUR
Mindestbestellmenge: 1000
STH6N95K5-2 STH6N95K5-2 STMicroelectronics en.DM00156940.pdf Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.29 EUR
2000+ 3.13 EUR
Mindestbestellmenge: 1000
STPS4S200S STPS4S200S STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
STPS5L60U STPS5L60U STMicroelectronics en.CD00002924.pdf Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
STFU18N65M2 STFU18N65M2 STMicroelectronics en.DM00164802.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
STFW3N170 STFW3N170 STMicroelectronics en.DM00071176.pdf Description: MOSFET N-CH 1700V 2.6A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
STB43N65M5 en.DM00217114.pdf
STB43N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+12.38 EUR
2000+ 11.6 EUR
Mindestbestellmenge: 1000
STF23N80K5 en.DM00225383.pdf
STF23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 978 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.66 EUR
50+ 10.02 EUR
100+ 8.59 EUR
500+ 7.63 EUR
Mindestbestellmenge: 3
STFU28N65M2 en.DM00167986.pdf
STFU28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
STGIPQ3H60T-HL en.DM00149104.pdf
STGIPQ3H60T-HL
Hersteller: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+23.22 EUR
10+ 20.97 EUR
100+ 17.37 EUR
Mindestbestellmenge: 2
STGIPQ3H60T-HZ en.DM00149104.pdf
STGIPQ3H60T-HZ
Hersteller: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Produkt ist nicht verfügbar
STGIPQ5C60T-HZ en.DM00131764.pdf
STGIPQ5C60T-HZ
Hersteller: STMicroelectronics
Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 345 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.14 EUR
15+ 21.55 EUR
105+ 17.96 EUR
Mindestbestellmenge: 2
STHVDAC-253MTGF3
STHVDAC-253MTGF3
Hersteller: STMicroelectronics
Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
auf Bestellung 2304 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
10+ 3.09 EUR
25+ 2.93 EUR
100+ 2.4 EUR
250+ 2.25 EUR
500+ 1.99 EUR
1000+ 1.57 EUR
Mindestbestellmenge: 8
STHVDAC-253MTGF3
STHVDAC-253MTGF3
Hersteller: STMicroelectronics
Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
Produkt ist nicht verfügbar
STL135N8F7AG en.DM00224699.pdf
STL135N8F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8796 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.51 EUR
10+ 6.31 EUR
100+ 5.1 EUR
500+ 4.53 EUR
1000+ 3.88 EUR
Mindestbestellmenge: 4
STL135N8F7AG en.DM00224699.pdf
STL135N8F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.66 EUR
6000+ 3.51 EUR
Mindestbestellmenge: 3000
STP23N80K5 en.DM00235958.pdf
STP23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 1105 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.1 EUR
50+ 10.38 EUR
100+ 8.9 EUR
500+ 7.91 EUR
1000+ 6.77 EUR
Mindestbestellmenge: 2
STPSC10H065GY-TR en.DM00123401.pdf
STPSC10H065GY-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1922 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.87 EUR
10+ 7.44 EUR
100+ 6.02 EUR
500+ 5.35 EUR
Mindestbestellmenge: 3
STPSC10H065GY-TR en.DM00123401.pdf
STPSC10H065GY-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+4.58 EUR
Mindestbestellmenge: 1000
STPTIC-15G2C5
STPTIC-15G2C5
Hersteller: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
STPTIC-15G2C5
STPTIC-15G2C5
Hersteller: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Produkt ist nicht verfügbar
STPTIC-33G2C5 en.DM00217090.pdf
STPTIC-33G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
STPTIC-39G2C5 en.DM00214174.pdf
STPTIC-39G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
auf Bestellung 2654 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.25 EUR
10+ 2.88 EUR
25+ 2.6 EUR
100+ 2.27 EUR
250+ 2 EUR
500+ 1.76 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 8
STPTIC-47G2C5 en.DM00217233.pdf
STPTIC-47G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.09 EUR
10+ 2.74 EUR
25+ 2.47 EUR
Mindestbestellmenge: 9
STPTIC-56G2C5
STPTIC-56G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
STPTIC-68G2C5 en.DM00214259.pdf
STPTIC-68G2C5
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Produkt ist nicht verfügbar
STTH30ACS06W en.DM00231434.pdf
STTH30ACS06W
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 215 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.43 EUR
10+ 4.51 EUR
100+ 3.59 EUR
Mindestbestellmenge: 5
STW23N80K5 en.DM00225098.pdf
STW23N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.42 EUR
30+ 12.22 EUR
120+ 10.47 EUR
510+ 9.31 EUR
Mindestbestellmenge: 2
STW65N80K5 en.DM00175110.pdf
STW65N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
auf Bestellung 463 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+42.85 EUR
30+ 34.69 EUR
120+ 32.65 EUR
STW88N65M5-4 en.DM00177200.pdf
STW88N65M5-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 585 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+41.05 EUR
30+ 33.24 EUR
120+ 31.29 EUR
510+ 28.35 EUR
STWA40N95K5 en.DM00220988.pdf
STWA40N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 38A TO247-3
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+45.6 EUR
ESDAVLC5-1BF4 en.DM00223541.pdf
ESDAVLC5-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 133641 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
44+0.6 EUR
63+ 0.41 EUR
129+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.094 EUR
Mindestbestellmenge: 44
SM30T42AY en.DM00035136.pdf
SM30T42AY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T42CAY en.DM00035136.pdf
SM30T42CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6379 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.38 EUR
10+ 2.77 EUR
100+ 2.16 EUR
500+ 1.83 EUR
1000+ 1.49 EUR
Mindestbestellmenge: 8
SM30T47AY en.DM00035136.pdf
SM30T47AY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.25 EUR
10+ 2.65 EUR
100+ 2.07 EUR
500+ 1.75 EUR
1000+ 1.43 EUR
Mindestbestellmenge: 8
SM30T47CAY en.DM00035136.pdf
SM30T47CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2364 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.38 EUR
10+ 2.77 EUR
100+ 2.16 EUR
500+ 1.83 EUR
1000+ 1.49 EUR
Mindestbestellmenge: 8
SM30T56AY en.DM00035136.pdf
SM30T56AY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 2490 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.2 EUR
100+ 2.5 EUR
500+ 2.06 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 8
SM30T56CAY en.DM00035136.pdf
SM30T56CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2419 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 3.26 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 8
STD10P10F6 en.DM00116775.pdf
STD10P10F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 100V 10A DPAK
Produkt ist nicht verfügbar
STD28P3LLH6AG DM00231309.pdf
STD28P3LLH6AG
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 12A
Produkt ist nicht verfügbar
STD30N6LF6AG en.DM00210369.pdf
STD30N6LF6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
auf Bestellung 2420 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.87 EUR
100+ 2.24 EUR
500+ 1.85 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 9
STD47N10F7AG en.DM00148114.pdf
STD47N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Produkt ist nicht verfügbar
STD64N4F6AG en.DM00185474.pdf
STD64N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1460 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.73 EUR
11+ 2.46 EUR
100+ 1.91 EUR
500+ 1.58 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
STH140N6F7-2 STH140N6F7-2%2C6.pdf
STH140N6F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
STH145N8F7-2AG en.DM00189800.pdf
STH145N8F7-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1775 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.85 EUR
10+ 6.58 EUR
100+ 5.33 EUR
500+ 4.73 EUR
Mindestbestellmenge: 4
STH6N95K5-2 en.DM00156940.pdf
STH6N95K5-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 3532 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.94 EUR
10+ 5.76 EUR
100+ 4.59 EUR
500+ 3.88 EUR
Mindestbestellmenge: 4
STPS4S200S en.DM00136818.pdf
STPS4S200S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
STPS5L60U en.CD00002924.pdf
STPS5L60U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 1930 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
20+ 1.3 EUR
100+ 0.9 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
ESDAVLC5-1BF4 en.DM00223541.pdf
ESDAVLC5-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 120000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15000+0.078 EUR
30000+ 0.077 EUR
75000+ 0.069 EUR
105000+ 0.06 EUR
Mindestbestellmenge: 15000
SM30T42AY en.DM00035136.pdf
SM30T42AY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T42CAY en.DM00035136.pdf
SM30T42CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.4 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 2500
SM30T47AY en.DM00035136.pdf
SM30T47AY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T47CAY en.DM00035136.pdf
SM30T47CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SM30T56AY en.DM00035136.pdf
SM30T56AY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SM30T56CAY en.DM00035136.pdf
SM30T56CAY
Hersteller: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STD10P10F6 en.DM00116775.pdf
STD10P10F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 100V 10A DPAK
Produkt ist nicht verfügbar
STD28P3LLH6AG DM00231309.pdf
STD28P3LLH6AG
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 12A
Produkt ist nicht verfügbar
STD30N6LF6AG en.DM00210369.pdf
STD30N6LF6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Produkt ist nicht verfügbar
STD47N10F7AG en.DM00148114.pdf
STD47N10F7AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Produkt ist nicht verfügbar
STD64N4F6AG en.DM00185474.pdf
STD64N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH145N8F7-2AG en.DM00189800.pdf
STH145N8F7-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+4.05 EUR
Mindestbestellmenge: 1000
STH6N95K5-2 en.DM00156940.pdf
STH6N95K5-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+3.29 EUR
2000+ 3.13 EUR
Mindestbestellmenge: 1000
STPS4S200S en.DM00136818.pdf
STPS4S200S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMC
Produkt ist nicht verfügbar
STPS5L60U en.CD00002924.pdf
STPS5L60U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Produkt ist nicht verfügbar
STFU18N65M2 en.DM00164802.pdf
STFU18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
STFW3N170 en.DM00071176.pdf
STFW3N170
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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