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HS1JL RVG HS1JL RVG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6955 Stücke
Lieferzeit 21-28 Tag (e)
HS1JFL HS1JFL HS1AFL%20SERIES_B2103.pdf Taiwan Semiconductor Corporation Description: 75NS 1A 600V HIGH EFFICIENT RECO
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: HS1J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A (DC)
Manufacturer: Taiwan Semiconductor Corporation
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 75NS 1A 600V HIGH EFFICIENT RECO
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1J
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 15023 Stücke
Lieferzeit 21-28 Tag (e)
HS1JFS M3G HS1JFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
HS1JAL M3G HS1JAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6200 Stücke
Lieferzeit 21-28 Tag (e)
HS1JLW RVG HS1JLW RVG HS1DLW%20SERIES_A1512.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max): 600V
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SOD123W
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2719 Stücke
Lieferzeit 21-28 Tag (e)
HS1J M2G HS1J M2G HS1A%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RQG HS1JL RQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL R3G HS1JL R3G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RHG HS1JL RHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL M2G HS1JL M2G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MHG HS1JL MHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MQG HS1JL MQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MTG HS1JL MTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RTG HS1JL RTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RFG HS1JL RFG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RUG HS1JL RUG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DFL HS1DFL HS1AFL SERIES_A1804.pdf Taiwan Semiconductor Corporation Description: 50NS 1A 200V HIGH EFFICIENT RECO
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: HS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 50NS 1A 200V HIGH EFFICIENT RECO
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: HS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5558 Stücke
Lieferzeit 21-28 Tag (e)
HS1DFS M3G HS1DFS M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6790 Stücke
Lieferzeit 21-28 Tag (e)
HS1DAL M3G HS1DAL M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
HS1DL RVG HS1DL RVG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
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auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
HS1DLW RVG HS1DLW RVG HS1DLW%20SERIES_A1512.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SOD123W
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SOD123W
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
HS1D M2G HS1D M2G HS1A%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
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HS1DL RQG HS1DL RQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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HS1DL R3G HS1DL R3G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
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HS1DL RHG HS1DL RHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Part Status: Active
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL M2G HS1DL M2G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL MHG HS1DL MHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL MQG HS1DL MQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL MTG HS1DL MTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL RTG HS1DL RTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL RFG HS1DL RFG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1DL RUG HS1DL RUG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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MTZJ2V7SB R0G MTZJ2V7SB R0G MTZJ2V0SA%20SERIES_C1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 2.8V 500MW DO34
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 100µA @ 1V
Impedance (Max) (Zzt): 110 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 2.8V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MTZJ2
Supplier Device Package: DO-34
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1KSMB10CA M4G 1KSMB10CA M4G 1KSMB SERIES_A2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 8.55V
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 69A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: 1KSMB10
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MBRF1560CT C0G MBRF1560CT C0G MBRF1535CT%20SERIES_I13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 60V ITO220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 300µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
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MBRS1560CT MNG MBRS1560CT MNG MBRS1535CT%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tape & Reel (TR)
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MBRS1560CTHMNG MBRS1560CTHMNG MBRS1535CT%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tape & Reel (TR)
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MBRS1560CT-Y MNG MBRS1560CT-Y MNG MBRS1545CT-Y%20SERIES_C15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBRF1560CTHC0G MBRF1560CTHC0G MBRF1535CT%20SERIES_I13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 60V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
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BZY55C6V2 RYG BZY55C2V4%20SERIES_D1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.2V 500MW 0805
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
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BZY55C8V2 RYG BZY55C2V4%20SERIES_D1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 8.2V 500MW 0805
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 0805
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 500mW
Tolerance: ±5%
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZY55B6V2 RYG BZY55B2V4%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 6.2V 500MW 0805
Supplier Device Package: 0805
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 2V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 6.2V
Part Status: Active
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BZY55B8V2 RYG BZY55B2V4%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 8.2V 500MW 0805
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
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RS2BA R3G RS2BA R3G RS2AA%20SERIES_H2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 1.5A DO214AC
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
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auf Bestellung 1598 Stücke
Lieferzeit 21-28 Tag (e)
6A100G R0G 6A05G%20SERIES_E14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 6A R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL RVG HS1AL RVG HS1AL%20SERIES_C2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1A
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auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2970 Stücke
Lieferzeit 21-28 Tag (e)
HS1A M2G HS1A M2G HS1A%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RQG HS1AL RQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1A R3G HS1A R3G HS1A%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL R3G HS1AL R3G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL RHG HS1AL RHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL M2G HS1AL M2G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL MHG HS1AL MHG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL MQG HS1AL MQG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL MTG HS1AL MTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL RTG HS1AL RTG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL RFG HS1AL RFG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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HS1AL RUG HS1AL RUG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
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SR502HR0G SR502HR0G SR502%20SERIES_I13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR502HA0G SR502HA0G SR502%20SERIES_I13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR502HB0G SR502HB0G SR502%20SERIES_I13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZX55B5V6 A0G BZX55B5V6 A0G BZX55B2V4%20SERIES_F1610.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
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BZW06-31B R0G BZW06-31B R0G BZW06%20SERIES_K2105.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 62A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBU801 D2G GBU801 D2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 50V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU802 D2G GBU802 D2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 100V 8A GBU
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 100V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 100V
Technology: Standard
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GBU803 D2G GBU803 D2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 200V 8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 200V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
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GBU804 D2G GBU804 D2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 400V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBU802HD2G GBU802HD2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 100V 8A GBU
Part Status: Active
Packaging: Tube
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBU803HD2G GBU803HD2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
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GBU804HD2G GBU804HD2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 400V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SA78A R0G SA78A R0G SA%20SERIES_K1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 78V 126V DO204AC
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 78V
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1KSMB12CA M4G 1KSMB12CA M4G 1KSMB SERIES_H1902.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 10.2V 16.7V DO214AA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 10.2V
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Current - Peak Pulse (10/1000µs): 59.9A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: 1KSMB12
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SMAJ7.0AHR3G SMAJ7.0AHR3G SMAJ%20SERIES_U2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 7VWM 12VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Unidirectional Channels: 1
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Applications: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SFAS804G MNG SFAS804G MNG SFAS801G%20SERIES_M15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
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SFAS804GHMNG SFAS804GHMNG SFAS801G%20SERIES_M15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
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S1JR2 S1JR2 Taiwan Semiconductor Corporation Description: 1A, 600V, GLASS PASSIVATED SMD R
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1J
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
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MBRS2545CT MNG MBRS2545CT MNG MBRS2535CT%20SERIES_M15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRS2545CTHMNG MBRS2545CTHMNG MBRS2535CT%20SERIES_M15.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZD27C24PW BZD27C24PW BZD27C11PW%20SERIES_A1612.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 24V 1W SOD123W
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 18V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM052NB03CR RLG TSM052NB03CR RLG TSM052NB03CR_A1910.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 17A/90A 8PDFN
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM052
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2294pF @ 15V
Vgs (Max): ±20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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TSM130NB06LCR TSM130NB06LCR TSM130NB06LCR_B1804.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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P4SMA30A R3G P4SMA30A R3G P4SMA%20SERIES_Q1705.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6V 41.4V DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10A
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: TVS DIODE 25.6V 41.4V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10A
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2187 Stücke
Lieferzeit 21-28 Tag (e)
DBLS206G RDG DBLS206G RDG DBLS201G%20SERIES_I15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Base Part Number: DBLS206
Supplier Device Package: DBLS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 2µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
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Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Current - Reverse Leakage @ Vr: 2µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: DBLS206
Supplier Device Package: DBLS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 563 Stücke
Lieferzeit 21-28 Tag (e)
MBRF2080CT C0G MBRF2080CT C0G MBRF2035CT%20SERIES_N13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 80V 20A ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 80V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBRF2080
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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HS1JL RVG HS1AL%20SERIES_B14.pdf
HS1JL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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HS1JL RVG HS1AL%20SERIES_B14.pdf
HS1JL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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HS1JFL HS1AFL%20SERIES_B2103.pdf
HS1JFL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS 1A 600V HIGH EFFICIENT RECO
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: HS1J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A (DC)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
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HS1JFL HS1AFL%20SERIES_B2103.pdf
HS1JFL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS 1A 600V HIGH EFFICIENT RECO
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1J
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Lieferzeit 21-28 Tag (e)
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HS1JFS M3G
HS1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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HS1JFS M3G
HS1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
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HS1JAL M3G
HS1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Lieferzeit 21-28 Tag (e)
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HS1JAL M3G
HS1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1JLW RVG HS1DLW%20SERIES_A1512.pdf
HS1JLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max): 600V
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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HS1JLW RVG HS1DLW%20SERIES_A1512.pdf
HS1JLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
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HS1J M2G HS1A%20SERIES_K15.pdf
HS1J M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RQG HS1AL%20SERIES_B14.pdf
HS1JL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL R3G HS1AL%20SERIES_B14.pdf
HS1JL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RHG HS1AL%20SERIES_B14.pdf
HS1JL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL M2G HS1AL%20SERIES_B14.pdf
HS1JL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MHG HS1AL%20SERIES_B14.pdf
HS1JL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MQG HS1AL%20SERIES_B14.pdf
HS1JL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL MTG HS1AL%20SERIES_B14.pdf
HS1JL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RTG HS1AL%20SERIES_B14.pdf
HS1JL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RFG HS1AL%20SERIES_B14.pdf
HS1JL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1JL RUG HS1AL%20SERIES_B14.pdf
HS1JL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DFL HS1AFL SERIES_A1804.pdf
HS1DFL
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS 1A 200V HIGH EFFICIENT RECO
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: HS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5558 Stücke - Preis und Lieferfrist anzeigen
HS1DFL HS1AFL%20SERIES_B2103.pdf
HS1DFL
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS 1A 200V HIGH EFFICIENT RECO
Package / Case: SOD-123F
Mounting Type: Surface Mount
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: HS1D
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 5558 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
HS1DFS M3G
HS1DFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6790 Stücke - Preis und Lieferfrist anzeigen
HS1DFS M3G
HS1DFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 6790 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
HS1DAL M3G
HS1DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
HS1DAL M3G
HS1DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
HS1DL RVG HS1AL%20SERIES_B14.pdf
HS1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
HS1DL RVG HS1AL%20SERIES_B14.pdf
HS1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
HS1DLW RVG HS1DLW%20SERIES_A1512.pdf
HS1DLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
HS1DLW RVG HS1DLW%20SERIES_A1512.pdf
HS1DLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
HS1D M2G HS1A%20SERIES_K15.pdf
HS1D M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL RQG HS1AL%20SERIES_B14.pdf
HS1DL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL R3G HS1AL%20SERIES_B14.pdf
HS1DL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL RHG HS1AL%20SERIES_B14.pdf
HS1DL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Part Status: Active
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL M2G HS1AL%20SERIES_B14.pdf
HS1DL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL MHG HS1AL%20SERIES_B14.pdf
HS1DL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL MQG HS1AL%20SERIES_B14.pdf
HS1DL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL MTG HS1AL%20SERIES_B14.pdf
HS1DL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL RTG HS1AL%20SERIES_B14.pdf
HS1DL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL RFG HS1AL%20SERIES_B14.pdf
HS1DL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1DL RUG HS1AL%20SERIES_B14.pdf
HS1DL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MTZJ2V7SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ2V7SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.8V 500MW DO34
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 100µA @ 1V
Impedance (Max) (Zzt): 110 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 2.8V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MTZJ2
Supplier Device Package: DO-34
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1KSMB10CA M4G 1KSMB SERIES_A2102.pdf
1KSMB10CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 8.55V
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 69A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: 1KSMB10
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1560CT C0G MBRF1535CT%20SERIES_I13.pdf
MBRF1560CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 300µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS1560CT MNG MBRS1535CT%20SERIES_K15.pdf
MBRS1560CT MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS1560CTHMNG MBRS1535CT%20SERIES_K15.pdf
MBRS1560CTHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS1560CT-Y MNG MBRS1545CT-Y%20SERIES_C15.pdf
MBRS1560CT-Y MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1560CTHC0G MBRF1535CT%20SERIES_I13.pdf
MBRF1560CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 60V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZY55C6V2 RYG BZY55C2V4%20SERIES_D1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 0805
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZY55C8V2 RYG BZY55C2V4%20SERIES_D1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 0805
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 0805
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 500mW
Tolerance: ±5%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZY55B6V2 RYG BZY55B2V4%20SERIES_C1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 0805
Supplier Device Package: 0805
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 2V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 6.2V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZY55B8V2 RYG BZY55B2V4%20SERIES_C1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 0805
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1960 Stücke - Preis und Lieferfrist anzeigen
RS2BA R3G RS2AA%20SERIES_H2102.pdf
RS2BA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1598 Stücke - Preis und Lieferfrist anzeigen
RS2BA R3G RS2AA%20SERIES_H2102.pdf
RS2BA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS2B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
auf Bestellung 1598 Stücke
Lieferzeit 21-28 Tag (e)
6A100G R0G 6A05G%20SERIES_E14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 6A R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RVG HS1AL%20SERIES_C2103.pdf
HS1AL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2970 Stücke - Preis und Lieferfrist anzeigen
HS1AL RVG HS1AL%20SERIES_C2103.pdf
HS1AL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: HS1A
auf Bestellung 2970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
HS1A M2G HS1A%20SERIES_K15.pdf
HS1A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RQG HS1AL%20SERIES_B14.pdf
HS1AL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1A R3G HS1A%20SERIES_K15.pdf
HS1A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL R3G HS1AL%20SERIES_B14.pdf
HS1AL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RHG HS1AL%20SERIES_B14.pdf
HS1AL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL M2G HS1AL%20SERIES_B14.pdf
HS1AL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL MHG HS1AL%20SERIES_B14.pdf
HS1AL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL MQG HS1AL%20SERIES_B14.pdf
HS1AL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL MTG HS1AL%20SERIES_B14.pdf
HS1AL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RTG HS1AL%20SERIES_B14.pdf
HS1AL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RFG HS1AL%20SERIES_B14.pdf
HS1AL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1AL RUG HS1AL%20SERIES_B14.pdf
HS1AL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR502HR0G SR502%20SERIES_I13.pdf
SR502HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR502HA0G SR502%20SERIES_I13.pdf
SR502HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR502HB0G SR502%20SERIES_I13.pdf
SR502HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 50V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: SR502
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55B5V6 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B5V6 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 760 Stücke - Preis und Lieferfrist anzeigen
BZW06-31B R0G BZW06%20SERIES_K2105.pdf
BZW06-31B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 62A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU801 D2G GBU801%20SERIES_K1705.pdf
GBU801 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU802 D2G GBU801%20SERIES_K1705.pdf
GBU802 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 100V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 100V
Technology: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU803 D2G GBU801%20SERIES_K1705.pdf
GBU803 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 200V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU804 D2G GBU801%20SERIES_K1705.pdf
GBU804 D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU802HD2G GBU801%20SERIES_K1705.pdf
GBU802HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Part Status: Active
Packaging: Tube
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU803HD2G GBU801%20SERIES_K1705.pdf
GBU803HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU804HD2G GBU801%20SERIES_K1705.pdf
GBU804HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SA78A R0G SA%20SERIES_K1602.pdf
SA78A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78V 126V DO204AC
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 78V
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Current - Peak Pulse (10/1000µs): 4.1A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1KSMB12CA M4G 1KSMB SERIES_H1902.pdf
1KSMB12CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO214AA
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 10.2V
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Current - Peak Pulse (10/1000µs): 59.9A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: 1KSMB12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ7.0AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ7.0AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Unidirectional Channels: 1
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Applications: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SFAS804G MNG SFAS801G%20SERIES_M15.pdf
SFAS804G MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SFAS804GHMNG SFAS801G%20SERIES_M15.pdf
SFAS804GHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1JR2
S1JR2
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 600V, GLASS PASSIVATED SMD R
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1J
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS2545CT MNG MBRS2535CT%20SERIES_M15.pdf
MBRS2545CT MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRS2545CTHMNG MBRS2535CT%20SERIES_M15.pdf
MBRS2545CTHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C24PW BZD27C11PW%20SERIES_A1612.pdf
BZD27C24PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 1W SOD123W
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 18V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM052NB03CR RLG TSM052NB03CR_A1910.pdf
TSM052NB03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 17A/90A 8PDFN
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM052
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2294pF @ 15V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
TSM130NB06LCR TSM130NB06LCR_B1804.pdf
TSM130NB06LCR
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P4SMA30A R3G P4SMA%20SERIES_Q1705.pdf
P4SMA30A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.4V DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10A
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2187 Stücke - Preis und Lieferfrist anzeigen
P4SMA30A R3G P4SMA%20SERIES_Q1705.pdf
P4SMA30A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.4V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10A
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
auf Bestellung 2187 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
DBLS206G RDG DBLS201G%20SERIES_I15.pdf
DBLS206G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Base Part Number: DBLS206
Supplier Device Package: DBLS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 2µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 563 Stücke - Preis und Lieferfrist anzeigen
DBLS206G RDG DBLS201G%20SERIES_I15.pdf
DBLS206G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Current - Reverse Leakage @ Vr: 2µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: DBLS206
Supplier Device Package: DBLS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 563 Stücke
Lieferzeit 21-28 Tag (e)
MBRF2080CT C0G MBRF2035CT%20SERIES_N13.pdf
MBRF2080CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 80V 20A ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 80V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: MBRF2080
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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