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MUR840HC0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR860HC0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR8L60 C0G MUR8L60 C0G Taiwan Semiconductor Corporation MUR8L60_B2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MUR8L60HC0G MUR8L60HC0G Taiwan Semiconductor Corporation MUR8L60_B2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Produkt ist nicht verfügbar
MURF10L60 C0G MURF10L60 C0G Taiwan Semiconductor Corporation MURF10L60_A1601.pdf Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MURF1640CT C0G MURF1640CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 400V ITO-220AB
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MURF1660CT C0G MURF1660CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 600V ITO-220AB
Produkt ist nicht verfügbar
MURF1660CTHC0G MURF1660CTHC0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 600V ITO-220AB
Produkt ist nicht verfügbar
MURF8L60 C0G MURF8L60 C0G Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RDBLS207G C1G RDBLS207G C1G Taiwan Semiconductor Corporation RDBLS207G_A15.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Produkt ist nicht verfügbar
RDBLS207GHC1G RDBLS207GHC1G Taiwan Semiconductor Corporation RDBLS207G_A15.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Produkt ist nicht verfügbar
SF1003G C0G SF1003G C0G Taiwan Semiconductor Corporation SF1001G%20SERIES_J15.pdf Description: DIODE GEN PURP 150V 10A TO220AB
Produkt ist nicht verfügbar
SF1004G C0G SF1004G C0G Taiwan Semiconductor Corporation SF1001G%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SF1004GHC0G SF1004GHC0G Taiwan Semiconductor Corporation SF1001G%20SERIES_K2104.pdf Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SF1601PTHC0G SF1601PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SF1602PTHC0G SF1602PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SF1603PTHC0G SF1603PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1604G C0G SF1604G C0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 16A TO220AB
Produkt ist nicht verfügbar
SF1604PTHC0G SF1604PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 200V 16A TO247AD
Produkt ist nicht verfügbar
SF1605G C0G SF1605G C0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 300V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SF1605GHC0G SF1605GHC0G Taiwan Semiconductor Corporation SF1601G%20SERIES_H1511.pdf Description: DIODE GEN PURP 300V 16A TO220AB
Produkt ist nicht verfügbar
SF1605PTHC0G SF1605PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 300V 16A TO247AD
Produkt ist nicht verfügbar
SF1606PTHC0G SF1606PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 400V 16A TO247AD
Produkt ist nicht verfügbar
SF1607PTHC0G SF1607PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 500V 16A TO247AD
Produkt ist nicht verfügbar
SF1608PTHC0G SF1608PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 600V 16A TO247AD
Produkt ist nicht verfügbar
SF2001PTHC0G SF2001PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 50V 20A TO247AD
Produkt ist nicht verfügbar
SF2002PTHC0G SF2002PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 100V 20A TO247AD
Produkt ist nicht verfügbar
SF2003PTHC0G SF2003PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 150V 20A TO247AD
Produkt ist nicht verfügbar
SF2004PT C0G SF2004PT C0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 200V 20A TO247AD
Produkt ist nicht verfügbar
SF2004PTHC0G SF2004PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 200V 20A TO247AD
Produkt ist nicht verfügbar
SF2005PTHC0G SF2005PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 300V 20A TO247AD
Produkt ist nicht verfügbar
SF2006PTHC0G SF2006PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 400V 20A TO247AD
Produkt ist nicht verfügbar
SF2007PTHC0G SF2007PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 500V 20A TO247AD
Produkt ist nicht verfügbar
SF2008PTHC0G SF2008PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 600V 20A TO247AD
Produkt ist nicht verfügbar
SF3001PTHC0G SF3001PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 50V 30A TO247AD
Produkt ist nicht verfügbar
SF3002PT C0G SF3002PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SF3002PTHC0G SF3002PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF3003PTHC0G SF3003PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE GEN PURP 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF3004PTHC0G SF3004PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 200V 30A TO247AD
Produkt ist nicht verfügbar
SF3006PT C0G SF3006PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 400V 30A TO247AD
Produkt ist nicht verfügbar
SF3006PTHC0G SF3006PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 400V 30A TO247AD
Produkt ist nicht verfügbar
SF3008PTHC0G SF3008PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Produkt ist nicht verfügbar
SFA1001G C0G SFA1001G C0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SFA1001GHC0G SFA1001GHC0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFA1003G C0G SFA1003G C0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_J1511.pdf Description: DIODE GEN PURP 150V 10A TO220AC
Produkt ist nicht verfügbar
SFAF1003G C0G SFAF1003G C0G Taiwan Semiconductor Corporation SFAF1001G%20SERIES_H2105.pdf Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SFAF1605G C0G SFAF1605G C0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SFAF1605GHC0G SFAF1605GHC0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SFAF502G C0G SFAF502G C0G Taiwan Semiconductor Corporation SFAF501G%20SERIES_H1512.pdf Description: DIODE GEN PURP 100V 5A ITO220AC
Produkt ist nicht verfügbar
SFF1003G C0G SFF1003G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_L14.pdf Description: DIODE GEN PURP 150V 10A ITO220AB
Produkt ist nicht verfügbar
SFF1605G C0G SFF1605G C0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1605GHC0G SFF1605GHC0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1606GHC0G SFF1606GHC0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 400V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1608G C0G SFF1608G C0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 600V 16A ITO220AB
Produkt ist nicht verfügbar
SFF502G C0G SFF502G C0G Taiwan Semiconductor Corporation SFF501G%20SERIES_H1511.pdf Description: DIODE GEN PURP 100V 5A ITO220AB
Produkt ist nicht verfügbar
SR1040 C0G SR1040 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 40V 10A TO220AB
Produkt ist nicht verfügbar
SR1040HC0G SR1040HC0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 40V 10A TO220AB
Produkt ist nicht verfügbar
SR1060 C0G SR1060 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
Produkt ist nicht verfügbar
SR1060HC0G SR1060HC0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR1090 C0G SR1090 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_K13.pdf Description: DIODE SCHOTTKY 90V 10A TO220AB
Produkt ist nicht verfügbar
MUR840HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR860HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MUR8L60 C0G MUR8L60_B2103.pdf
MUR8L60 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MUR8L60HC0G MUR8L60_B2103.pdf
MUR8L60HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Produkt ist nicht verfügbar
MURF10L60 C0G MURF10L60_A1601.pdf
MURF10L60 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MURF1640CT C0G MURF1620CT%20SERIES_J1511.pdf
MURF1640CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
auf Bestellung 435 Stücke:
Lieferzeit 21-28 Tag (e)
MURF1660CT C0G MURF1620CT%20SERIES_J1511.pdf
MURF1660CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
Produkt ist nicht verfügbar
MURF1660CTHC0G MURF1620CT%20SERIES_J1511.pdf
MURF1660CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
Produkt ist nicht verfügbar
MURF8L60 C0G MURF8L60_C2105.pdf
MURF8L60 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RDBLS207G C1G RDBLS207G_A15.pdf
RDBLS207G C1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Produkt ist nicht verfügbar
RDBLS207GHC1G RDBLS207G_A15.pdf
RDBLS207GHC1G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Produkt ist nicht verfügbar
SF1003G C0G SF1001G%20SERIES_J15.pdf
SF1003G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A TO220AB
Produkt ist nicht verfügbar
SF1004G C0G SF1001G%20SERIES_J15.pdf
SF1004G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SF1004GHC0G SF1001G%20SERIES_K2104.pdf
SF1004GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SF1601PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1601PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SF1602PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1602PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SF1603PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1603PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF1604G C0G SF1601G%20SERIES_I2104.pdf
SF1604G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO220AB
Produkt ist nicht verfügbar
SF1604PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1604PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO247AD
Produkt ist nicht verfügbar
SF1605G C0G SF1601G%20SERIES_I2104.pdf
SF1605G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SF1605GHC0G SF1601G%20SERIES_H1511.pdf
SF1605GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO220AB
Produkt ist nicht verfügbar
SF1605PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1605PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO247AD
Produkt ist nicht verfügbar
SF1606PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1606PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO247AD
Produkt ist nicht verfügbar
SF1607PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1607PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 16A TO247AD
Produkt ist nicht verfügbar
SF1608PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1608PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO247AD
Produkt ist nicht verfügbar
SF2001PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2001PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 20A TO247AD
Produkt ist nicht verfügbar
SF2002PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2002PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 20A TO247AD
Produkt ist nicht verfügbar
SF2003PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2003PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 20A TO247AD
Produkt ist nicht verfügbar
SF2004PT C0G SF2001PT%20SERIES_H1601.pdf
SF2004PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
Produkt ist nicht verfügbar
SF2004PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2004PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
Produkt ist nicht verfügbar
SF2005PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2005PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 20A TO247AD
Produkt ist nicht verfügbar
SF2006PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2006PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A TO247AD
Produkt ist nicht verfügbar
SF2007PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2007PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 20A TO247AD
Produkt ist nicht verfügbar
SF2008PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2008PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A TO247AD
Produkt ist nicht verfügbar
SF3001PTHC0G SF3001PT%20SERIES_H15.pdf
SF3001PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 30A TO247AD
Produkt ist nicht verfügbar
SF3002PT C0G SF3001PT%20SERIES_J2103.pdf
SF3002PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SF3002PTHC0G SF3001PT%20SERIES_J2103.pdf
SF3002PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF3003PTHC0G SF3001PT%20SERIES_J2103.pdf
SF3003PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF3004PTHC0G SF3001PT%20SERIES_H15.pdf
SF3004PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 30A TO247AD
Produkt ist nicht verfügbar
SF3006PT C0G SF3001PT%20SERIES_H15.pdf
SF3006PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 30A TO247AD
Produkt ist nicht verfügbar
SF3006PTHC0G SF3001PT%20SERIES_H15.pdf
SF3006PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 30A TO247AD
Produkt ist nicht verfügbar
SF3008PTHC0G SF3001PT%20SERIES_H15.pdf
SF3008PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO247AD
Produkt ist nicht verfügbar
SFA1001G C0G SFA1001G%20SERIES_K2103.pdf
SFA1001G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SFA1001GHC0G SFA1001G%20SERIES_K2103.pdf
SFA1001GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SFA1003G C0G SFA1001G%20SERIES_J1511.pdf
SFA1003G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A TO220AC
Produkt ist nicht verfügbar
SFAF1003G C0G SFAF1001G%20SERIES_H2105.pdf
SFAF1003G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
SFAF1605G C0G SFAF1601G%20SERIES_H2105.pdf
SFAF1605G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SFAF1605GHC0G SFAF1601G%20SERIES_H2105.pdf
SFAF1605GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
SFAF502G C0G SFAF501G%20SERIES_H1512.pdf
SFAF502G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A ITO220AC
Produkt ist nicht verfügbar
SFF1003G C0G SFF1001G%20SERIES_L14.pdf
SFF1003G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AB
Produkt ist nicht verfügbar
SFF1605G C0G SFF1601G%20SERIES_H14.pdf
SFF1605G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1605GHC0G SFF1601G%20SERIES_H14.pdf
SFF1605GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1606GHC0G SFF1601G%20SERIES_H14.pdf
SFF1606GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A ITO220AB
Produkt ist nicht verfügbar
SFF1608G C0G SFF1601G%20SERIES_H14.pdf
SFF1608G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AB
Produkt ist nicht verfügbar
SFF502G C0G SFF501G%20SERIES_H1511.pdf
SFF502G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A ITO220AB
Produkt ist nicht verfügbar
SR1040 C0G SR1020%20SERIES_L2104.pdf
SR1040 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
Produkt ist nicht verfügbar
SR1040HC0G SR1020%20SERIES_L2104.pdf
SR1040HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
Produkt ist nicht verfügbar
SR1060 C0G SR1020%20SERIES_L2104.pdf
SR1060 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Produkt ist nicht verfügbar
SR1060HC0G SR1020%20SERIES_L2104.pdf
SR1060HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR1090 C0G SR1020%20SERIES_K13.pdf
SR1090 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A TO220AB
Produkt ist nicht verfügbar
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