Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25493) > Seite 140 nach 425
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SMAJ8.0AHR3G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 8VWM 13.6VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 29.4A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMAJ9.0AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| KBPF207G C8G | Taiwan Semiconductor Corporation |
Description: 2A 1000V STANDARD BRIDGE RECTIFI |
auf Bestellung 4066 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TS10K40-A D3G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 10A D3 |
auf Bestellung 3392 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TSM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM250NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 7A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM250NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 7A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSUP10M45SH S1G | Taiwan Semiconductor Corporation |
Description: 10A, 45V, SCHOTTKY RECTIFIER |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSUP10M45SH S1G | Taiwan Semiconductor Corporation |
Description: 10A, 45V, SCHOTTKY RECTIFIER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TQM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 9A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TQM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 9A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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DBLS204G RDG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 2A DBLS |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DBLS106G RDG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 1A DBLS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS1MAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS1MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS1MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 6728 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS1MAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 6950 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1DFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1JFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 600V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1JAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 600V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1GAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1BAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1GFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1BFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1DAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1BAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1JFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 600V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1BFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 100V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1JAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 600V, SUPER FAST RECOV |
auf Bestellung 6771 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1DAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1GAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1GFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 6853 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES1DFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TQM150NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM150NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR2060CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 60V TO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR2060CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 60V TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TST30L45CW C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 15A TO220AB |
auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TST30L45C C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 15A TO220AB |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSF30L45C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 45V ITO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SK54C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 5A DO214AB Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1SMA4746 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Discontinued at Digi-Key Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SK320A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM60NB600CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 7A TO252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NB600CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 7A TO252 |
auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDJ70A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 113V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 26.5A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMDJ70AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA20CA M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA20CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA20CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA20CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF9.0A RQG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF9.0A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC SOD123W Current - Peak Pulse (10/1000µs): 13A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 15.4V Voltage - Breakdown (Min): 10V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF90A RQG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF90A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 90VWM 146VC SOD123W Type: Zener Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 146V Voltage - Breakdown (Min): 100V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 90V Current - Peak Pulse (10/1000µs): 1.05A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF9.0AHRQG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF9.0AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC SOD123W Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 15.4V Voltage - Breakdown (Min): 10V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 9V Current - Peak Pulse (10/1000µs): 13A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF90AHRQG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF90AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 90VWM 146VC SOD123W Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 146V Voltage - Breakdown (Min): 100V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 90V Current - Peak Pulse (10/1000µs): 1.05A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMAJ8.0AHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ9.0AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPF207G C8G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 2A 1000V STANDARD BRIDGE RECTIFI
Description: 2A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 4066 Stücke:
Lieferzeit 10-14 Tag (e)
| TS10K40-A D3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A D3
Description: BRIDGE RECT 1PHASE 400V 10A D3
auf Bestellung 3392 Stücke:
Lieferzeit 10-14 Tag (e)
| TSM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM250NB06DCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 7A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.87 EUR |
| 5000+ | 0.81 EUR |
| TSM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 13+ | 1.65 EUR |
| 100+ | 1.29 EUR |
| TSM250NB06DCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 7A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| TSUP10M45SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
Description: 10A, 45V, SCHOTTKY RECTIFIER
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| TSUP10M45SH S1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
Description: 10A, 45V, SCHOTTKY RECTIFIER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TQM150NB04DCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Description: MOSFET 2N-CH 40V 9A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TQM150NB04DCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Description: MOSFET 2N-CH 40V 9A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| DBLS204G RDG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| DBLS106G RDG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1MFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1MFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6728 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6950 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1DFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1JFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES1JAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1GAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1BAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1GFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1BFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1DAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1BAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1BFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 6771 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1DAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1GAL M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1GFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 6853 Stücke:
Lieferzeit 10-14 Tag (e)
| ES1DFS M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| TQM150NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.74 EUR |
| TQM150NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.82 EUR |
| MBR2060CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MBR2060CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TST30L45CW C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
| TST30L45C C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| TSF30L45C C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SK54C V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 1SMA4746 R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK320A R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TSM60NB600CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.64 EUR |
| TSM60NB600CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.1 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.21 EUR |
| 500+ | 4.44 EUR |
| 1000+ | 3.75 EUR |
| SMDJ70A R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ70AHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA20CA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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Stück im Wert von UAH
| P4SMA20CA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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| P4SMA20CAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA20CAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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| SMF9.0A RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMF9.0A RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Current - Peak Pulse (10/1000µs): 13A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Description: TVS DIODE 9VWM 15.4VC SOD123W
Current - Peak Pulse (10/1000µs): 13A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF90A RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMF90A RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC SOD123W
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.05A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Description: TVS DIODE 90VWM 146VC SOD123W
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.05A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF9.0AHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMF9.0AHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 13A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: TVS DIODE 9VWM 15.4VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 15.4V
Voltage - Breakdown (Min): 10V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 13A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF90AHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMF90AHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC SOD123W
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.05A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: TVS DIODE 90VWM 146VC SOD123W
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.05A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH