Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25566) > Seite 149 nach 427
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RS3B R7G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 100V 3A DO214ABVoltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1B M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P6SMB160A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1GM RSG | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A MICRO SMA Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Micro SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 3pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1GM RSG | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A MICRO SMA Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Micro SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 3pF @ 4V, 1MHz Technology: Standard Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Cut Tape (CT) |
auf Bestellung 1726 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60N380CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 11A TO252 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM60N380CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 11A TO252 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZV55B4V3 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW MINI MELF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA22CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8V 30.6V DO214AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA22CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8V 30.6V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSFML RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 500MA SUB SMA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSFML RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 500MA SUB SMA |
auf Bestellung 1521 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10KC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 10A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10KC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 10A DO214AB |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10JCHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10JCHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10JC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S10JC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SA30CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 10.8A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 64.3V Voltage - Breakdown (Min): 33.3V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SA30CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 64.3V Voltage - Breakdown (Min): 33.3V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 10.8A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SA30CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SA30CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 64.3V Voltage - Breakdown (Min): 33.3V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 10.8A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SA30CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 64.3V Voltage - Breakdown (Min): 33.3V Bidirectional Channels: 1 Supplier Device Package: DO-204AC (DO-15) Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 10.8A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZW06-31B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZW06-31B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZW06-31 B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZW06-31B B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM6968SDCA RVG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM6968SDCA RVG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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S3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
auf Bestellung 1667 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3D V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3DHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S3DHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS3D V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS3D V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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HS3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P6SMB180CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 154VWM 246VC DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P4SMA8.2AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.02V 12.1V DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF6.0A RVG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMF6.0A RVG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL |
auf Bestellung 14850 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ12AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12V 19.9V DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMSZ5261B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 500MW SOD123F |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE STD 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHMHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 800MA SUBSMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHMQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 800MA SUBSMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHMTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHRFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 800MA SUBSMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHRUG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1KLHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 800MA SUBSMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SK315B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AA Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RS3B R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 31+ | 0.68 EUR |
| HS1B M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| P6SMB160A M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| ESH1GM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| ESH1GM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 42+ | 0.51 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| TSM60N380CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO252
Description: MOSFET N-CHANNEL 600V 11A TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| TSM60N380CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO252
Description: MOSFET N-CHANNEL 600V 11A TO252
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZV55B4V3 L0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW MINI MELF
Description: DIODE ZENER 4.3V 500MW MINI MELF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| P4SMA22CA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA22CAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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Stück im Wert von UAH
| RSFML RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 500MA SUB SMA
Description: DIODE GEN PURP 1KV 500MA SUB SMA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| RSFML RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 500MA SUB SMA
Description: DIODE GEN PURP 1KV 500MA SUB SMA
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
| S10KC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Description: DIODE GEN PURP 800V 10A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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Stück im Wert von UAH
| S10KC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Description: DIODE GEN PURP 800V 10A DO214AB
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
| S10JCHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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Stück im Wert von UAH
| S10JCHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
| S10MC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S10MC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S10JC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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Stück im Wert von UAH
| S10JC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA30CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Description: TVS DIODE 30VWM 64.3VC DO204AC
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA30CA B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA30CAHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Description: TVS DIODE 30VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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Stück im Wert von UAH
| SA30CAHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA30CAHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Description: TVS DIODE 30VWM 64.3VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 64.3V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 10.8A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-31B R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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Stück im Wert von UAH
| BZW06-31B A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-31 B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-31B B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM6968SDCA RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 150000 Stücke
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| TSM6968SDCA RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 16+ | 1.32 EUR |
| S3D V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| S3D V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
auf Bestellung 1667 Stücke:
Lieferzeit 10-14 Tag (e)
| S3D V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| S3D R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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Stück im Wert von UAH
| S3D R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S3DHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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Stück im Wert von UAH
| S3DHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| RS3D R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS3D V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS3D V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS3D V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS3D R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB180CA R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
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Stück im Wert von UAH
| P4SMA8.2AHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AC
Description: TVS DIODE 7.02V 12.1V DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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Stück im Wert von UAH
| SMF6.0A RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| SMF6.0A RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
auf Bestellung 14850 Stücke:
Lieferzeit 10-14 Tag (e)
| SMBJ12AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12V 19.9V DO214AA
Description: TVS DIODE 12V 19.9V DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
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Stück im Wert von UAH
| MMSZ5261B RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW SOD123F
Description: DIODE ZENER 47V 500MW SOD123F
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE STD 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Description: DIODE GP 800V 800MA SUB SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GP 800V 800MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Description: DIODE GP 800V 800MA SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHRUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Description: DIODE GP 800V 800MA SUB SMA
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KLHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK315B R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 150V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH