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TSM60N750CP ROG TSM60N750CP ROG Taiwan Semiconductor Corporation TSM60N750_A14.pdf Description: MOSFET N-CHANNEL 600V 6A TO252
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TSM60N750CH C5G TSM60N750CH C5G Taiwan Semiconductor Corporation TSM60N750_A14.pdf Description: MOSFET N-CHANNEL 600V 6A TO251
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TSN520M60 TSN520M60 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 20A 8PDFN
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PDFN (5x6)
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
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TSN520M60 S4G TSN520M60 S4G Taiwan Semiconductor Corporation Description: DIODE STANDARD 60V 20A 8PDFN
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PDFN (5x6)
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
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MUR140SH MUR140SH Taiwan Semiconductor Corporation MUR105SH SERIES_A2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Qualification: AEC-Q101
Grade: Automotive
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MUR140S MUR140S Taiwan Semiconductor Corporation MUR105S SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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GBPC25005W T0G GBPC25005W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 50V 25A GBPC-W
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GBPC25005 T0G GBPC25005 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1PHASE 50V 25A GBPC
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GBPC25005M T0G GBPC25005M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 50V 25A GBPC-M
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TS40P06G TS40P06G Taiwan Semiconductor Corporation TS40P05G SERIES_G2203.pdf Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS40P06GH TS40P06GH Taiwan Semiconductor Corporation TS40P05G SERIES_G2203.pdf Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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SA12CAH SA12CAH Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 12VWM 19.9VC DO204AC
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SF1004G SF1004G Taiwan Semiconductor Corporation SF1001G SERIES_K2104.pdf Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SMAJ150CAH SMAJ150CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ150CA R3G SMAJ150CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
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ESH3DFSH ESH3DFSH Taiwan Semiconductor Corporation ESH3DFSH_B2103.pdf Description: DIODE STANDARD 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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ESH3DFSH ESH3DFSH Taiwan Semiconductor Corporation ESH3DFSH_B2103.pdf Description: DIODE STANDARD 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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ESH3D R7G ESH3D R7G Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D V7G ESH3D V7G Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
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SK32AHM2G SK32AHM2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 20V 3A DO214AC
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TSF20U60C TSF20U60C Taiwan Semiconductor Corporation TSF20U45C SERIES_H2105.pdf Description: DIODE ARR SCHOT 60V 10A ITO220AB
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TST20U60CW TST20U60CW Taiwan Semiconductor Corporation TST20U45CW-TST20U60CW_C2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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GBU402H GBU402H Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 100V GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
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GBU403 GBU403 Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 200V GBU
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GBU403H GBU403H Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 200V GBU
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MBRF10H100CT MBRF10H100CT Taiwan Semiconductor Corporation MBRF10H100CT SERIES_I2105.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TS4K60 TS4K60 Taiwan Semiconductor Corporation TS4K40 SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 600V 4A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS20P05G TS20P05G Taiwan Semiconductor Corporation TS20P01G SERIES_O2203.pdf Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS35P05G TS35P05G Taiwan Semiconductor Corporation TS35P05G SERIES_F2203.pdf Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS6P05G TS6P05G Taiwan Semiconductor Corporation TS6P01G%20SERIES_M2203.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P06G TS15P06G Taiwan Semiconductor Corporation TS15P01G SERIES_N2203.pdf Description: BRIDGE RECT 1P 800V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TSI20H100CW TSI20H100CW Taiwan Semiconductor Corporation TSI20H100CW-TSI20H200CW_E2104.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
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TSD20H100CW TSD20H100CW Taiwan Semiconductor Corporation TSD20H100CW%20SERIES_G2103.pdf Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
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TSD20H100CW TSD20H100CW Taiwan Semiconductor Corporation TSD20H100CW%20SERIES_G2103.pdf Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
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SF68G SF68G Taiwan Semiconductor Corporation SF61G%20SERIES_G2105.pdf Description: DIODE STANDARD 600V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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TSM076NH04LDCR RLG TSM076NH04LDCR RLG Taiwan Semiconductor Corporation TSM076NH04LDCR_D2207.pdf Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM076NH04LDCR RLG TSM076NH04LDCR RLG Taiwan Semiconductor Corporation TSM076NH04LDCR_D2207.pdf Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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TSM076NH04DCR RLG TSM076NH04DCR RLG Taiwan Semiconductor Corporation TSM076NH04DCR_D2207.pdf Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM076NH04DCR RLG TSM076NH04DCR RLG Taiwan Semiconductor Corporation TSM076NH04DCR_D2207.pdf Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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MTZJ47S R0G MTZJ47S R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 46.5V 500MW DO34
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MTZJ7V5SA R0G MTZJ7V5SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 7.04V 500MW DO34
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MTZJ4V3SB R0G MTZJ4V3SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.3V 500MW DO34
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MTZJ6V2SB R0G MTZJ6V2SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 6.12V 500MW DO34
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KBP201G C2G Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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KBP201G C2 Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1KSMB15CAH 1KSMB15CAH Taiwan Semiconductor Corporation pdf.php?pn=1KSMB15CAH Description: TVS DIODE 12.8VWM 21.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 47.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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HER301G HER301G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE STANDARD 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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SMCJ18CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BZY55C5V6 RYG BZY55C5V6 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 5.6V 500MW 0805
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BZT55C5V6 L1G BZT55C5V6 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 5.6V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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P4SMA12CAH P4SMA12CAH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMAJ30CAH SMAJ30CAH Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT3904T RSG MMBT3904T RSG Taiwan Semiconductor Corporation MMBT3904T_A2209.pdf Description: TRANS NPN 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MMBT3904T RSG MMBT3904T RSG Taiwan Semiconductor Corporation MMBT3904T_A2209.pdf Description: TRANS NPN 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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TSM043NH04LCR RLG TSM043NH04LCR RLG Taiwan Semiconductor Corporation TSM043NH04LCR_B2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM043NH04LCR RLG TSM043NH04LCR RLG Taiwan Semiconductor Corporation TSM043NH04LCR_B2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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TSM60N750CP ROG TSM60N750_A14.pdf
TSM60N750CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
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TSM60N750CH C5G TSM60N750_A14.pdf
TSM60N750CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO251
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TSN520M60
TSN520M60
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A 8PDFN
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PDFN (5x6)
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSN520M60 S4G
TSN520M60 S4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 60V 20A 8PDFN
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PDFN (5x6)
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MUR140SH MUR105SH SERIES_A2102.pdf
MUR140SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Qualification: AEC-Q101
Grade: Automotive
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AnzahlPrivatkunde
3000+0.19 EUR
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MUR140S MUR105S SERIES_L2102.pdf
MUR140S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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3000+0.19 EUR
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GBPC25005W T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-W
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GBPC25005 T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
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GBPC25005M T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-M
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TS40P06G TS40P05G SERIES_G2203.pdf
TS40P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS40P06GH TS40P05G SERIES_G2203.pdf
TS40P06GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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SA12CAH SA%20SERIES_L2105.pdf
SA12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO204AC
Produkt ist nicht verfügbar
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SF1004G SF1001G SERIES_K2104.pdf
SF1004G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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SMAJ150CAH SMAJH SERIES_A2102.pdf
SMAJ150CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ150CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ150CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESH3DFSH ESH3DFSH_B2103.pdf
ESH3DFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESH3DFSH ESH3DFSH_B2103.pdf
ESH3DFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13773 Stücke:
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21+1 EUR
27+0.79 EUR
100+0.51 EUR
500+0.4 EUR
1000+0.3 EUR
2000+0.29 EUR
5000+0.27 EUR
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ESH3D R7G ESH3B%20SERIES_I2102.pdf
ESH3D R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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ESH3D R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
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ESH3D R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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ESH3D R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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ESH3D V7G ESH3B%20SERIES_I2102.pdf
ESH3D V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
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SK32AHM2G SK32A%20SERIES_V2102.pdf
SK32AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO214AC
Produkt ist nicht verfügbar
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TSF20U60C TSF20U45C SERIES_H2105.pdf
TSF20U60C
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TST20U60CW TST20U45CW-TST20U60CW_C2104.pdf
TST20U60CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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GBU402H GBU401%20SERIES_M2103.pdf
GBU402H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 100V GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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GBU403 GBU401%20SERIES_M2103.pdf
GBU403
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
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GBU403H GBU401%20SERIES_M2103.pdf
GBU403H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
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MBRF10H100CT MBRF10H100CT SERIES_I2105.pdf
MBRF10H100CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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TS4K60 TS4K40 SERIES_F2101.pdf
TS4K60
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 675 Stücke:
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8+2.64 EUR
13+1.67 EUR
50+1.24 EUR
100+1.09 EUR
500+0.86 EUR
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TS20P05G TS20P01G SERIES_O2203.pdf
TS20P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1200 Stücke:
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6+4.14 EUR
15+2.48 EUR
105+1.8 EUR
510+1.44 EUR
1005+1.33 EUR
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TS35P05G TS35P05G SERIES_F2203.pdf
TS35P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 770 Stücke:
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5+4.93 EUR
15+2.96 EUR
105+2.17 EUR
510+1.75 EUR
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TS6P05G TS6P01G%20SERIES_M2203.pdf
TS6P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
auf Bestellung 4 Stücke:
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TS15P06G TS15P01G SERIES_N2203.pdf
TS15P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1057 Stücke:
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6+4.13 EUR
10+2.64 EUR
100+1.8 EUR
500+1.44 EUR
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TSI20H100CW TSI20H100CW-TSI20H200CW_E2104.pdf
TSI20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 956 Stücke:
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4+5.34 EUR
10+4.8 EUR
100+3.93 EUR
500+3.34 EUR
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TSD20H100CW TSD20H100CW%20SERIES_G2103.pdf
TSD20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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TSD20H100CW TSD20H100CW%20SERIES_G2103.pdf
TSD20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.76 EUR
10+4.27 EUR
100+3.44 EUR
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SF68G SF61G%20SERIES_G2105.pdf
SF68G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 1250 Stücke:
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AnzahlPrivatkunde
1250+0.6 EUR
Mindestbestellmenge: 1250 Stücke
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TSM076NH04LDCR RLG TSM076NH04LDCR_D2207.pdf
TSM076NH04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TSM076NH04LDCR RLG TSM076NH04LDCR_D2207.pdf
TSM076NH04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4425 Stücke:
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AnzahlPrivatkunde
6+4.11 EUR
10+2.64 EUR
100+1.8 EUR
500+1.44 EUR
1000+1.39 EUR
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TSM076NH04DCR RLG TSM076NH04DCR_D2207.pdf
TSM076NH04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TSM076NH04DCR RLG TSM076NH04DCR_D2207.pdf
TSM076NH04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 55.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+2.64 EUR
100+1.8 EUR
500+1.44 EUR
1000+1.39 EUR
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MTZJ47S R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ47S R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 46.5V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ7V5SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ7V5SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.04V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ4V3SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V3SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MTZJ6V2SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ6V2SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.12V 500MW DO34
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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KBP201G C2G KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBP201G C2 KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1KSMB15CAH pdf.php?pn=1KSMB15CAH
1KSMB15CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 47.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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HER301G HER301G SERIES_I2105.pdf
HER301G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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SMCJ18CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BZY55C5V6 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C5V6 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT55C5V6 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C5V6 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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P4SMA12CAH P4SMAH SERIES_A2102.pdf
P4SMA12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMAJ30CAH SMAJH%20SERIES_A2102.pdf
SMAJ30CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBT3904T RSG MMBT3904T_A2209.pdf
MMBT3904T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 40V 0.2A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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MMBT3904T RSG MMBT3904T_A2209.pdf
MMBT3904T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 40V 0.2A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 1271 Stücke:
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53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
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TSM043NH04LCR RLG TSM043NH04LCR_B2207.pdf
TSM043NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+1.27 EUR
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TSM043NH04LCR RLG TSM043NH04LCR_B2207.pdf
TSM043NH04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3718 Stücke:
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AnzahlPrivatkunde
5+4.41 EUR
10+2.83 EUR
50+2.14 EUR
100+1.93 EUR
500+1.54 EUR
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