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MBRF20H150CTH Taiwan Semiconductor Corporation MBRF20H100CT%20SERIES_I2105.pdf Description: 20A, 150V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRS20H150CT MBRS20H150CT Taiwan Semiconductor Corporation MBRS20H100CT SERIES_J2103.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRF10H150CTH Taiwan Semiconductor Corporation MBRF10H100CT%20SERIES_I2105.pdf Description: 10A, 150V, SCHOTTKY RECTIFIER
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
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MBR20H150CTH MBR20H150CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 20A TO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBRF10H150CT MBRF10H150CT Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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TSM070NH04CR RLG TSM070NH04CR RLG Taiwan Semiconductor Corporation TSM070NH04CR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
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TSM070NH04CR RLG TSM070NH04CR RLG Taiwan Semiconductor Corporation TSM070NH04CR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
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TSM019NH04CR RLG TSM019NH04CR RLG Taiwan Semiconductor Corporation TSM019NH04CR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
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TSM019NH04CR RLG TSM019NH04CR RLG Taiwan Semiconductor Corporation TSM019NH04CR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
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TSM032NH04CR RLG TSM032NH04CR RLG Taiwan Semiconductor Corporation TSM032NH04CR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
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TSM032NH04CR RLG TSM032NH04CR RLG Taiwan Semiconductor Corporation TSM032NH04CR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
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FR204GH FR204GH Taiwan Semiconductor Corporation FR201G SERIES_H2105.pdf Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SMCJ9.0A M6G SMCJ9.0A M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMCJ9.0A R7G SMCJ9.0A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMCJ9.0AHR7G SMCJ9.0AHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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SMCJ9.0AHM6G SMCJ9.0AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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TSM055N03PQ56 Taiwan Semiconductor Corporation Description: 30V, 80A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM055N03EPQ56 Taiwan Semiconductor Corporation TSM055N03EPQ56_B1710.pdf Description: 30V, 80A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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SMCJ150AH SMCJ150AH Taiwan Semiconductor Corporation Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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P4KE300AH P4KE300AH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 256VWM 414VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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TSM900N06CW Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 6A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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RB520SM5-40 RB520SM5-40 Taiwan Semiconductor Corporation RB520SM540A2004.pdf Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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P4KE13AH P4KE13AH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 11.1VWM 18.2VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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HS1JLW HS1JLW Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1JF-T HS1JF-T Taiwan Semiconductor Corporation HS1DF-T SERIES_B2103.pdf Description: DIODE STANDARD 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JLWH HS1JLWH Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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HS1JH Taiwan Semiconductor Corporation HS1AH%20SERIES_A2102.pdf Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JALH Taiwan Semiconductor Corporation HS1DALH%20SERIES_B2103.pdf Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1JFSH HS1JFSH Taiwan Semiconductor Corporation HS1DFSH SERIES_B2103.pdf Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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HS1JL HS1JL Taiwan Semiconductor Corporation pdf.php?pn=HS1JL Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JLH HS1JLH Taiwan Semiconductor Corporation HS1ALH%20SERIES_A2103.pdf Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MTZJ36SC MTZJ36SC Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_D2301.pdf Description: DIODE ZENER 34.27V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 34.27 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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MTZJ36SB Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_D2301.pdf Description: DO-34, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 75 Ohms
Voltage - Zener (Nom) (Vz): 33.64 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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MTZJ39SA Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_D2301.pdf Description: DO-34, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 35.58 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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MTZJ30SA MTZJ30SA Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_D2301.pdf Description: DIODE ZENER 27.69V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27.69 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 23 V
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RS1KF-T RS1KF-T Taiwan Semiconductor Corporation RS1DF-T SERIES_B2103.pdf Description: DIODE STANDARD 800V 1A SMAF
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
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BZV55C62 BZV55C62 Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 62V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1.5KE350CH 1.5KE350CH Taiwan Semiconductor Corporation Description: TVS DIODE 284VWM 504VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC7.5CA 1.5SMC7.5CA Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: TVS DIODE 6.4VWM 11.3V DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CAHM6G 1.5SMC7.5CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CAHR7G 1.5SMC7.5CAHR7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CA M6G 1.5SMC7.5CA M6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC7.5CA R7G 1.5SMC7.5CA R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE27CH Taiwan Semiconductor Corporation Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM950N10CW Taiwan Semiconductor Corporation TSM950N10_D1807.pdf Description: 100V, 6.5A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 9W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
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1.5KE12 1.5KE12 Taiwan Semiconductor Corporation pdf.php?pn=1.5KE12 Description: 1500W, 12V, 10%, UNIDIRECTIONAL,
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 17.3V
Voltage - Breakdown (Min): 10.8V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 9.72V
Current - Peak Pulse (10/1000µs): 91A
Qualification: AEC-Q101
Grade: Automotive
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
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SMF6.5AH SMF6.5AH Taiwan Semiconductor Corporation pdf.php?pn=SMF6.5AH Description: 200W, 7.6V, 5%, UNIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 17.9A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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HER203G HER203G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SMBJ6.0 SMBJ6.0 Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: 600W, 7.4V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P4KE12CAH Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P4KE12CAHB0G P4KE12CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CAHR1G P4KE12CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CAHA0G P4KE12CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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BC338-25-B0 A1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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P6SMB36CAH P6SMB36CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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100+0.52 EUR
500+0.39 EUR
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ABS15LJ ABS15LJ Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS15LJ REG ABS15LJ REG Taiwan Semiconductor Corporation ABS15J%20SERIES_E2103.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ABS15JH ABS15JH Taiwan Semiconductor Corporation ABS15J SERIES_E2103.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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ABS15JHREG ABS15JHREG Taiwan Semiconductor Corporation ABS15J%20SERIES_E2103.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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TSM6866SDCA Taiwan Semiconductor Corporation TSM6866SD_C15.pdf Description: 20V, 6A, DUAL N-CHANNEL POWER MO
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 0.6V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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MBRF20H150CTH MBRF20H100CT%20SERIES_I2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 20A, 150V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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MBRS20H150CT MBRS20H100CT SERIES_J2103.pdf
MBRS20H150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRF10H150CTH MBRF10H100CT%20SERIES_I2105.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 150V, SCHOTTKY RECTIFIER
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
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MBR20H150CTH
MBR20H150CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBRF10H150CT MBRF1035CT%20SERIES_M2105.pdf
MBRF10H150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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TSM070NH04CR RLG TSM070NH04CR_E2207.pdf
TSM070NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
Produkt ist nicht verfügbar
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TSM070NH04CR RLG TSM070NH04CR_E2207.pdf
TSM070NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
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100+1.23 EUR
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TSM019NH04CR RLG TSM019NH04CR_E2207.pdf
TSM019NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
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2500+2.36 EUR
5000+2.28 EUR
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TSM019NH04CR RLG TSM019NH04CR_E2207.pdf
TSM019NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
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3+7.38 EUR
10+4.83 EUR
100+3.39 EUR
500+2.8 EUR
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TSM032NH04CR RLG TSM032NH04CR_D2207.pdf
TSM032NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
auf Bestellung 5000 Stücke:
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2500+1.38 EUR
5000+1.29 EUR
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TSM032NH04CR RLG TSM032NH04CR_D2207.pdf
TSM032NH04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
auf Bestellung 5000 Stücke:
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5+4.71 EUR
10+3.02 EUR
100+2.07 EUR
500+1.65 EUR
1000+1.52 EUR
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FR204GH FR201G SERIES_H2105.pdf
FR204GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3500+0.14 EUR
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SMCJ9.0A M6G SMCJ SERIES_R2004.pdf
SMCJ9.0A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMCJ9.0A R7G SMCJ SERIES_R2004.pdf
SMCJ9.0A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMCJ9.0AHR7G SMCJ SERIES_R2004.pdf
SMCJ9.0AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMCJ9.0AHM6G SMCJ SERIES_R2004.pdf
SMCJ9.0AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TSM055N03PQ56
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 80A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSM055N03EPQ56 TSM055N03EPQ56_B1710.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 80A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCJ150AH
SMCJ150AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P4KE300AH P4KE%20SERIES_N2104.pdf
P4KE300AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 256VWM 414VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TSM900N06CW
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar
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RB520SM5-40 RB520SM540A2004.pdf
RB520SM5-40
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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P4KE13AH P4KE%20SERIES_N2104.pdf
P4KE13AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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HS1JLW
HS1JLW
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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AnzahlPrivatkunde
10000+0.13 EUR
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HS1JF-T HS1DF-T SERIES_B2103.pdf
HS1JF-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JLWH
HS1JLWH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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10000+0.13 EUR
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HS1JH HS1AH%20SERIES_A2102.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JALH HS1DALH%20SERIES_B2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JFSH HS1DFSH SERIES_B2103.pdf
HS1JFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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14000+0.14 EUR
28000+0.13 EUR
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HS1JL pdf.php?pn=HS1JL
HS1JL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AnzahlPrivatkunde
10000+0.17 EUR
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HS1JLH HS1ALH%20SERIES_A2103.pdf
HS1JLH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MTZJ36SC MTZJ2V0SA%20SERIES_D2301.pdf
MTZJ36SC
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 34.27V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 34.27 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Produkt ist nicht verfügbar
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MTZJ36SB MTZJ2V0SA%20SERIES_D2301.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DO-34, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 75 Ohms
Voltage - Zener (Nom) (Vz): 33.64 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MTZJ39SA MTZJ2V0SA%20SERIES_D2301.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DO-34, 500MW, 2%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 35.58 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MTZJ30SA MTZJ2V0SA%20SERIES_D2301.pdf
MTZJ30SA
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27.69V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27.69 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 23 V
Produkt ist nicht verfügbar
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RS1KF-T RS1DF-T SERIES_B2103.pdf
RS1KF-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SMAF
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar
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BZV55C62 BZV55C2V4%20SERIES_H2301.pdf
BZV55C62
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE350CH
1.5KE350CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 284VWM 504VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC7.5CA 1.5SMC SERIES_S2207.pdf
1.5SMC7.5CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3V DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CAHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC7.5CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CAHR7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC7.5CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC7.5CA M6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC7.5CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC7.5CA R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC7.5CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5KE27CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM950N10CW TSM950N10_D1807.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 6.5A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 9W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar
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1.5KE12 pdf.php?pn=1.5KE12
1.5KE12
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 12V, 10%, UNIDIRECTIONAL,
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 17.3V
Voltage - Breakdown (Min): 10.8V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 9.72V
Current - Peak Pulse (10/1000µs): 91A
Qualification: AEC-Q101
Grade: Automotive
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF6.5AH pdf.php?pn=SMF6.5AH
SMF6.5AH
Hersteller: Taiwan Semiconductor Corporation
Description: 200W, 7.6V, 5%, UNIDIRECTIONAL,
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 17.9A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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HER203G HER201G SERIES_G2105.pdf
HER203G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SMBJ6.0 SMBJ SERIES_R2104.pdf
SMBJ6.0
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 7.4V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P4KE12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4KE12CAHB0G P4KE%20SERIES_N2104.pdf
P4KE12CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CAHR1G P4KE%20SERIES_N2104.pdf
P4KE12CAHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CAHA0G P4KE%20SERIES_N2104.pdf
P4KE12CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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BC338-25-B0 A1G BC337_thru_BC338-16_25_40_VerB14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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P6SMB36CAH P6SMBH SERIES_A2102.pdf
P6SMB36CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 22534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.81 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.36 EUR
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ABS15LJ
ABS15LJ
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ABS15LJ REG ABS15J%20SERIES_E2103.pdf
ABS15LJ REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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ABS15JH ABS15J SERIES_E2103.pdf
ABS15JH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ABS15JHREG ABS15J%20SERIES_E2103.pdf
ABS15JHREG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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TSM6866SDCA TSM6866SD_C15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 20V, 6A, DUAL N-CHANNEL POWER MO
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 0.6V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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