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ES3JBH ES3JBH Taiwan Semiconductor Corporation ES3ABH SERIES_A2102.pdf Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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ES3JH ES3JH Taiwan Semiconductor Corporation ES3AH SERIES_A2102.pdf Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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MUR120SH MUR120SH Taiwan Semiconductor Corporation MUR105SH SERIES_A2102.pdf Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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SS14H SS14H Taiwan Semiconductor Corporation SS12H SERIES_B2305.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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SS14LH SS14LH Taiwan Semiconductor Corporation SS12LH SERIES_A2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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UF4006H UF4006H Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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1.5KE7.5CAH 1.5KE7.5CAH Taiwan Semiconductor Corporation Description: TVS 1500W 7.5V 5% BIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BAS70-05 RFG BAS70-05 RFG Taiwan Semiconductor Corporation BAS70 SERIES_F2001.pdf Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BAS70-05 RFG BAS70-05 RFG Taiwan Semiconductor Corporation BAS70 SERIES_F2001.pdf Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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SK15H45 SK15H45 Taiwan Semiconductor Corporation pdf.php?pn=SK15H45 Description: DIODE SCHOTTKY 45V 15A R-6
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
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SK15H45H SK15H45H Taiwan Semiconductor Corporation pdf.php?pn=SK15H45 Description: 15A, 45V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 200°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
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SK15H45 B0G SK15H45 B0G Taiwan Semiconductor Corporation SK15H45_F2104.pdf Description: DIODE SCHOTTKY 45V 15A R-6
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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BC857A RFG BC857A RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC857A RFG BC857A RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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KBP151G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP151G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP153G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 200V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP153G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 200V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP154G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP154G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP155G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP155G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP156G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 800V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP156G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 800V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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RS3MFSH RS3MFSH Taiwan Semiconductor Corporation RS3MFSH_B2304.pdf Description: DIODE STANDARD 1000V 3A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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RS3MFS RS3MFS Taiwan Semiconductor Corporation RS3MFS_D2304.pdf Description: DIODE STANDARD 1000V 3A SOD128
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
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RS3MH RS3MH Taiwan Semiconductor Corporation RS3AH SERIES_B2304.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S1KLS S1KLS Taiwan Semiconductor Corporation S1DLS SERIES_H2103.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KLS S1KLS Taiwan Semiconductor Corporation S1DLS SERIES_H2103.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KLSH S1KLSH Taiwan Semiconductor Corporation S1DLSH SERIES_A2103.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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S1KLSH S1KLSH Taiwan Semiconductor Corporation S1DLSH SERIES_A2103.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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RS1KLSH RS1KLSH Taiwan Semiconductor Corporation RS1JLSH SERIES_B2304.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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RS1KLSH RS1KLSH Taiwan Semiconductor Corporation RS1JLSH SERIES_B2304.pdf Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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TSM038N03PQ33 Taiwan Semiconductor Corporation Description: 30V, 78A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Produkt ist nicht verfügbar
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SMBJ90AH SMBJ90AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SF26GH SF26GH Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SMBJ85A SMBJ85A Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ85A SMBJ85A Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
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BZT52C24S R9G BZT52C24S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24S R9G BZT52C24S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24 RHG BZT52C24 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24 RHG BZT52C24 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24-G RHG BZT52C24-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 24V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
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BZT52C24-G RHG BZT52C24-G RHG Taiwan Semiconductor Corporation BZT52C2V4%20-%20BZT52C75.pdf Description: DIODE ZENER 24V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
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BZT52C24K RKG BZT52C24K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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BZT52C24K RKG BZT52C24K RKG Taiwan Semiconductor Corporation BZT52C2V7K SERIES_G2402.pdf Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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BZT52C24S BZT52C24S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 24V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24-G BZT52C24-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 24V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24K BZT52C24K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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SMCJ78CAH SMCJ78CAH Taiwan Semiconductor Corporation pdf.php?pn=SMCJ78CAH Description: TVS DIODE 78VWM 126VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 126V
Voltage - Breakdown (Min): 86.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 12.5A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMB6SH RMB6SH Taiwan Semiconductor Corporation RMB2S SERIES_I2103.pdf Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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1N5240B A0G 1N5240B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8 V
Produkt ist nicht verfügbar
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BC858C RFG BC858C RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BC858C RFG BC858C RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BC858A RFG BC858A RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BC858A RFG BC858A RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BC858B RFG BC858B RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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BC858B RFG BC858B RFG Taiwan Semiconductor Corporation BC856A SERIES_I2001.pdf Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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UF4004H UF4004H Taiwan Semiconductor Corporation UF4001 SERIES_P2104.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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MBRF2080CTH MBRF2080CTH Taiwan Semiconductor Corporation pdf.php?pn=MBRF2080CT Description: DIODE ARR SCHOT 80V 20A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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ES3JBH ES3ABH SERIES_A2102.pdf
ES3JBH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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ES3JH ES3AH SERIES_A2102.pdf
ES3JH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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MUR120SH MUR105SH SERIES_A2102.pdf
MUR120SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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SS14H SS12H SERIES_B2305.pdf
SS14H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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SS14LH SS12LH SERIES_A2103.pdf
SS14LH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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UF4006H UF4001%20SERIES_P2104.pdf
UF4006H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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1.5KE7.5CAH
1.5KE7.5CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 1500W 7.5V 5% BIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BAS70-05 RFG BAS70 SERIES_F2001.pdf
BAS70-05 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BAS70-05 RFG BAS70 SERIES_F2001.pdf
BAS70-05 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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SK15H45 pdf.php?pn=SK15H45
SK15H45
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A R-6
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
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SK15H45H pdf.php?pn=SK15H45
SK15H45H
Hersteller: Taiwan Semiconductor Corporation
Description: 15A, 45V, SCHOTTKY RECTIFIER
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 200°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SK15H45 B0G SK15H45_F2104.pdf
SK15H45 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A R-6
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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BC857A RFG BC856A SERIES_I2001.pdf
BC857A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC857A RFG BC856A SERIES_I2001.pdf
BC857A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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KBP151G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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KBP151G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP153G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Produkt ist nicht verfügbar
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KBP153G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP154G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Produkt ist nicht verfügbar
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KBP154G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP155G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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KBP155G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Produkt ist nicht verfügbar
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KBP156G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1.5A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Produkt ist nicht verfügbar
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KBP156G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1.5A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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RS3MFSH RS3MFSH_B2304.pdf
RS3MFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A SOD128
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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RS3MFS RS3MFS_D2304.pdf
RS3MFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A SOD128
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
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RS3MH RS3AH SERIES_B2304.pdf
RS3MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S1KLS S1DLS SERIES_H2103.pdf
S1KLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KLS S1DLS SERIES_H2103.pdf
S1KLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1KLSH S1DLSH SERIES_A2103.pdf
S1KLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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S1KLSH S1DLSH SERIES_A2103.pdf
S1KLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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RS1KLSH RS1JLSH SERIES_B2304.pdf
RS1KLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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RS1KLSH RS1JLSH SERIES_B2304.pdf
RS1KLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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35+0.61 EUR
57+0.37 EUR
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TSM038N03PQ33
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 78A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Produkt ist nicht verfügbar
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SMBJ90AH SMBJH SERIES_A2102.pdf
SMBJ90AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SF26GH SF21G SERIES_H2105.pdf
SF26GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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23+0.92 EUR
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SMBJ85A SMBJ SERIES_R2104.pdf
SMBJ85A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ85A SMBJ SERIES_R2104.pdf
SMBJ85A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
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BZT52C24S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C24S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C24S R9G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C24 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C24 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
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BZT52C24-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C24-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
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BZT52C24-G RHG BZT52C2V4%20-%20BZT52C75.pdf
BZT52C24-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 350MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
auf Bestellung 5960 Stücke:
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BZT52C24K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C24K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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3000+0.089 EUR
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BZT52C24K RKG BZT52C2V7K SERIES_G2402.pdf
BZT52C24K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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48+0.44 EUR
78+0.27 EUR
125+0.17 EUR
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BZT52C24S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C24S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C24-G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Produkt ist nicht verfügbar
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BZT52C24K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C24K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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SMCJ78CAH pdf.php?pn=SMCJ78CAH
SMCJ78CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 126V
Voltage - Breakdown (Min): 86.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 12.5A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMB6SH RMB2S SERIES_I2103.pdf
RMB6SH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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12+1.76 EUR
20+1.11 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
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1N5240B A0G 1N5221B SERIES_H2301.pdf
1N5240B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8 V
Produkt ist nicht verfügbar
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BC858C RFG BC856A SERIES_I2001.pdf
BC858C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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6000+0.055 EUR
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BC858C RFG BC856A SERIES_I2001.pdf
BC858C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 8900 Stücke:
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67+0.31 EUR
109+0.19 EUR
177+0.12 EUR
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BC858A RFG BC856A SERIES_I2001.pdf
BC858A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
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3000+0.062 EUR
6000+0.055 EUR
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BC858A RFG BC856A SERIES_I2001.pdf
BC858A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 8978 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
109+0.19 EUR
177+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
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BC858B RFG BC856A SERIES_I2001.pdf
BC858B RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.063 EUR
6000+0.056 EUR
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BC858B RFG BC856A SERIES_I2001.pdf
BC858B RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 8970 Stücke:
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67+0.31 EUR
108+0.19 EUR
176+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
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UF4004H UF4001 SERIES_P2104.pdf
UF4004H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
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27+0.8 EUR
43+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
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MBRF2080CTH pdf.php?pn=MBRF2080CT
MBRF2080CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 80V 20A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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