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UF4003HR1G UF4003HR1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4004 R1G UF4004 R1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
UF4004HR1G UF4004HR1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4005 R1G UF4005 R1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
UF4005HR1G UF4005HR1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4006 R1G UF4006 R1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
UF4006HR1G UF4006HR1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4007 R1G UF4007 R1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Produkt ist nicht verfügbar
UF4007HR1G UF4007HR1G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ABS10 RGG ABS10 RGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 1KV 800MA ABS
Produkt ist nicht verfügbar
ABS10HRGG ABS10HRGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 1KV 800MA ABS
Produkt ist nicht verfügbar
ABS15MHRGG ABS15MHRGG Taiwan Semiconductor Corporation ABS15J%20SERIES_E2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
Produkt ist nicht verfügbar
ABS6 RGG ABS6 RGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 600V 800MA ABS
Produkt ist nicht verfügbar
ABS6HRGG ABS6HRGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 600V 800MA ABS
Produkt ist nicht verfügbar
ABS8 RGG ABS8 RGG Taiwan Semiconductor Corporation ABS2%20SERIES_L15.pdf Description: BRIDGE RECT 1P 800V 800MA ABS
Produkt ist nicht verfügbar
ABS8HRGG ABS8HRGG Taiwan Semiconductor Corporation ABS2%20SERIES_L15.pdf Description: BRIDGE RECT 1P 800V 800MA ABS
Produkt ist nicht verfügbar
BZD27C100P RHG BZD27C100P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
BZD27C100PHRHG BZD27C100PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 100V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
BZD27C10PHRHG BZD27C10PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 10V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
Produkt ist nicht verfügbar
BZD27C11PHRHG BZD27C11PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 11V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C120P RHG BZD27C120P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 120.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C120PHRHG BZD27C120PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 120.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C12P RHG BZD27C12P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 12.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C12PHRHG BZD27C12PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 12.05V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.39%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C150P RHG BZD27C150P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 147V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
BZD27C150PHRHG BZD27C150PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 147V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C160P RHG BZD27C160P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C160PHRHG BZD27C160PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C16PHRHG BZD27C16PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C18PHRHG BZD27C18PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C20PHRHG BZD27C20PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRHG BZD27C22PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C27PHRHG BZD27C27PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C30PHRHG BZD27C30PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
ES1BL RHG ES1BL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BLHRHG ES1BLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RHG ES1GL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1JF R2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RHG ES1JL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
ES1JLHRHG ES1JLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HS1KL RHG HS1KL RHG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1ML RHG HS1ML RHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
MBS10HRCG MBS10HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
Produkt ist nicht verfügbar
MBS8HRCG MBS8HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_O15.pdf Description: BRIDGE RECT 1P 800V 500MA MBS
Produkt ist nicht verfügbar
RABS15MHRGG RABS15MHRGG Taiwan Semiconductor Corporation RABS15M_D2103.pdf Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Produkt ist nicht verfügbar
RMB4S RCG RMB4S RCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT 1P 400V 500MA MBS
Produkt ist nicht verfügbar
RMB4SHRCG RMB4SHRCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT 1P 400V 500MA MBS
Produkt ist nicht verfügbar
RS1BL RHG RS1BL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1BLHRHG RS1BLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1KL RHG RS1KL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS1KLHRHG RS1KLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
SBS25 RGG SBS25 RGG Taiwan Semiconductor Corporation SBS24%20SERIES_B15.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
Produkt ist nicht verfügbar
SBS25HRGG SBS25HRGG Taiwan Semiconductor Corporation SBS24%20SERIES_B15.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
Produkt ist nicht verfügbar
SBS34 RGG SBS34 RGG Taiwan Semiconductor Corporation SBS34%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 40V 3A ABS
Produkt ist nicht verfügbar
SBS34HRGG SBS34HRGG Taiwan Semiconductor Corporation SBS34%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 40V 3A ABS
Produkt ist nicht verfügbar
SS110L RHG SS110L RHG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
Produkt ist nicht verfügbar
SS110LHRHG SS110LHRHG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
Produkt ist nicht verfügbar
SS14L RHG SS14L RHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
SS14LHRHG SS14LHRHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS16L RHG SS16L RHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
UF4003HR1G UF4001%20SERIES_P2104.pdf
UF4003HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4004 R1G UF4001%20SERIES_P2104.pdf
UF4004 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
UF4004HR1G UF4001%20SERIES_P2104.pdf
UF4004HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4005 R1G UF4001%20SERIES_P2104.pdf
UF4005 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
UF4005HR1G UF4001%20SERIES_P2104.pdf
UF4005HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4006 R1G UF4001%20SERIES_P2104.pdf
UF4006 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
UF4006HR1G UF4001%20SERIES_P2104.pdf
UF4006HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
UF4007 R1G UF4001%20SERIES_P2104.pdf
UF4007 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Produkt ist nicht verfügbar
UF4007HR1G UF4001%20SERIES_P2104.pdf
UF4007HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ABS10 RGG ABS2%20SERIES_M2103.pdf
ABS10 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 800MA ABS
Produkt ist nicht verfügbar
ABS10HRGG ABS2%20SERIES_M2103.pdf
ABS10HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 800MA ABS
Produkt ist nicht verfügbar
ABS15MHRGG ABS15J%20SERIES_E2103.pdf
ABS15MHRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
Produkt ist nicht verfügbar
ABS6 RGG ABS2%20SERIES_M2103.pdf
ABS6 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 800MA ABS
Produkt ist nicht verfügbar
ABS6HRGG ABS2%20SERIES_M2103.pdf
ABS6HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 800MA ABS
Produkt ist nicht verfügbar
ABS8 RGG ABS2%20SERIES_L15.pdf
ABS8 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 800MA ABS
Produkt ist nicht verfügbar
ABS8HRGG ABS2%20SERIES_L15.pdf
ABS8HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 800MA ABS
Produkt ist nicht verfügbar
BZD27C100P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C100P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
BZD27C100PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C100PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
BZD27C10PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C10PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
Produkt ist nicht verfügbar
BZD27C11PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C11PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C120P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C120P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C120PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C120PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 120.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C12P RHG BZD27C%20SERIES_AA1806.pdf
BZD27C12P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C12PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C12PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.39%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C150P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C150P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 147V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
BZD27C150PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C150PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 147V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.12%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 147 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C160P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C160P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C160PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C160PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 162V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.55%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 162 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Produkt ist nicht verfügbar
BZD27C16PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C16PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.2V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C18PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C18PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17.95V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17.95 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Produkt ist nicht verfügbar
BZD27C20PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C20PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C22PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C27PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
BZD27C30PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
ES1BL RHG ES1AL%20SERIES_L2103.pdf
ES1BL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1BLHRHG ES1AL%20SERIES_L2103.pdf
ES1BLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
ES1GL RHG ES1AL%20SERIES_K15.pdf
ES1GL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Produkt ist nicht verfügbar
ES1JF R2G ES1A%20SERIES_O2112.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1JL RHG ES1AL%20SERIES_L2103.pdf
ES1JL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
ES1JLHRHG ES1AL%20SERIES_L2103.pdf
ES1JLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HS1KL RHG HS1AL SERIES_C2103.pdf
HS1KL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS1ML RHG HS1AL%20SERIES_C2103.pdf
HS1ML RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
MBS10HRCG MBS2%20SERIES_P2103.pdf
MBS10HRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
Produkt ist nicht verfügbar
MBS8HRCG MBS2%20SERIES_O15.pdf
MBS8HRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 500MA MBS
Produkt ist nicht verfügbar
RABS15MHRGG RABS15M_D2103.pdf
RABS15MHRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Produkt ist nicht verfügbar
RMB4S RCG RMB2S%20SERIES_G1708.pdf
RMB4S RCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
Produkt ist nicht verfügbar
RMB4SHRCG RMB2S%20SERIES_G1708.pdf
RMB4SHRCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
Produkt ist nicht verfügbar
RS1BL RHG RS1AL%20SERIES_M15.pdf
RS1BL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1BLHRHG RS1AL%20SERIES_M15.pdf
RS1BLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1KL RHG RS1AL%20SERIES_N2103.pdf
RS1KL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS1KLHRHG RS1AL%20SERIES_N2103.pdf
RS1KLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
SBS25 RGG SBS24%20SERIES_B15.pdf
SBS25 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
Produkt ist nicht verfügbar
SBS25HRGG SBS24%20SERIES_B15.pdf
SBS25HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
Produkt ist nicht verfügbar
SBS34 RGG SBS34%20SERIES_E15.pdf
SBS34 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 40V 3A ABS
Produkt ist nicht verfügbar
SBS34HRGG SBS34%20SERIES_E15.pdf
SBS34HRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 40V 3A ABS
Produkt ist nicht verfügbar
SS110L RHG SS12L%20SERIES_P15.pdf
SS110L RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
Produkt ist nicht verfügbar
SS110LHRHG SS12L%20SERIES_P15.pdf
SS110LHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
Produkt ist nicht verfügbar
SS14L RHG SS12L SERIES_Q2103.pdf
SS14L RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
SS14LHRHG SS12L SERIES_Q2103.pdf
SS14LHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS16L RHG SS12L SERIES_Q2103.pdf
SS16L RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
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