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TSM8N80CZ C0G TSM8N80CZ C0G Taiwan Semiconductor Corporation TSM8N80_D15.pdf Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
TSM900N06CH X0G TSM900N06CH X0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 48594 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
75+ 1.18 EUR
150+ 0.86 EUR
525+ 0.72 EUR
1050+ 0.61 EUR
2025+ 0.54 EUR
5025+ 0.52 EUR
10050+ 0.48 EUR
Mindestbestellmenge: 19
TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.34 EUR
5000+ 0.33 EUR
Mindestbestellmenge: 2500
TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 10020 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
30+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
TSM900N10CH X0G TSM900N10CH X0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Produkt ist nicht verfügbar
TSM900N10CP ROG TSM900N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.7 EUR
5000+ 0.66 EUR
12500+ 0.61 EUR
Mindestbestellmenge: 2500
TSM900N10CP ROG TSM900N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 29089 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.85 EUR
17+ 1.59 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
TSM9435CS RLG TSM9435CS RLG Taiwan Semiconductor Corporation TSM9435CS_D1602.pdf Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM9435CS RLG TSM9435CS RLG Taiwan Semiconductor Corporation TSM9435CS_D1602.pdf Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2562 Stücke:
Lieferzeit 21-28 Tag (e)
TSM950N10CW RPG TSM950N10CW RPG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.56 EUR
5000+ 0.53 EUR
Mindestbestellmenge: 2500
TSM950N10CW RPG TSM950N10CW RPG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 14762 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
TSM9N90ECI C0G TSM9N90ECI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
TSM9N90ECZ C0G TSM9N90ECZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
TSP10H200S S1G TSP10H200S S1G Taiwan Semiconductor Corporation TSP10H200S_D15.pdf Description: DIODE SCHOTTKY 200V 10A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10H45S S1G TSP10H45S S1G Taiwan Semiconductor Corporation TSP10H45S%20SERIES_E2103.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10H45S S1G TSP10H45S S1G Taiwan Semiconductor Corporation TSP10H45S%20SERIES_E2103.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U100S S1G TSP10U100S S1G Taiwan Semiconductor Corporation TSP10U100S%20SERIES_E15.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U100S S1G TSP10U100S S1G Taiwan Semiconductor Corporation TSP10U100S%20SERIES_E15.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 37890 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U45S S1G TSP10U45S S1G Taiwan Semiconductor Corporation TSP10U45S_F15.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Produkt ist nicht verfügbar
TSP10U45S S1G TSP10U45S S1G Taiwan Semiconductor Corporation TSP10U45S_F15.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Produkt ist nicht verfügbar
TSP12U120S S1G TSP12U120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP12U120S S1G TSP12U120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 7370 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H120S S1G TSP15H120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
TSP15H120S S1G TSP15H120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
TSP15H150S S1G TSP15H150S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_C2103.pdf Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H150S S1G TSP15H150S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_C2103.pdf Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 5732 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H200S S1G TSP15H200S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_B15.pdf Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H200S S1G TSP15H200S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_B15.pdf Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 7105 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15U100S S1G TSP15U100S S1G Taiwan Semiconductor Corporation TSP15U100S_E2103.pdf Description: DIODE SCHOTTKY 100V 15A TO277A
Produkt ist nicht verfügbar
TSP15U100S S1G TSP15U100S S1G Taiwan Semiconductor Corporation TSP15U100S_E2103.pdf Description: DIODE SCHOTTKY 100V 15A TO277A
auf Bestellung 1040 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15U50S S1G TSP15U50S S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+1.79 EUR
3000+ 1.7 EUR
Mindestbestellmenge: 1500
TSP15U50S S1G TSP15U50S S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3392 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.11 EUR
Mindestbestellmenge: 7
TSP20U60S S1G TSP20U60S S1G Taiwan Semiconductor Corporation TSP20U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 34500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP20U60S S1G TSP20U60S S1G Taiwan Semiconductor Corporation TSP20U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 37426 Stücke:
Lieferzeit 21-28 Tag (e)
TSPB10U45S S1G TSPB10U45S S1G Taiwan Semiconductor Corporation TSPB10U45S_G15.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
TSPB10U45S S1G TSPB10U45S S1G Taiwan Semiconductor Corporation TSPB10U45S_G15.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
TSS4B03G D2G TSS4B03G D2G Taiwan Semiconductor Corporation TSS4B01G%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 200V 4A TS4B
Produkt ist nicht verfügbar
TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.17 EUR
12000+ 0.14 EUR
Mindestbestellmenge: 4000
TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 29190 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
39+ 0.68 EUR
100+ 0.34 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
TSSA3U45 R3G TSSA3U45 R3G Taiwan Semiconductor Corporation TSSA3U45_N1707.pdf Description: DIODE SCHOTTKY 45V 3A DO214AC
auf Bestellung 21638 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA3U60 R3G TSSA3U60 R3G Taiwan Semiconductor Corporation TSSA3U60_F1612.pdf Description: DIODE SCHOTTKY 60V 3A DO214AC
auf Bestellung 6496 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA5U50 E3G TSSA5U50 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 50V 5A DO214AC
auf Bestellung 4662 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA5U60 E3G TSSA5U60 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 60V 5A DO214AC
auf Bestellung 2414 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 1054 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 297000 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 299431 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3U60 RVG TSSE3U60 RVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
Produkt ist nicht verfügbar
TSSE3U60 RVG TSSE3U60 RVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
TST10H150CW C0G TST10H150CW C0G Taiwan Semiconductor Corporation TST10H100CW%20SERIES_A14.pdf Description: DIODE SCHOTTKY 150V 5A TO220AB
auf Bestellung 956 Stücke:
Lieferzeit 21-28 Tag (e)
TST10L200CW C0G TST10L200CW C0G Taiwan Semiconductor Corporation TST10H100CW-TST10H200CW_B2104.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.97 EUR
10+ 4.45 EUR
100+ 3.57 EUR
500+ 2.94 EUR
Mindestbestellmenge: 6
TST10L60CW C0G TST10L60CW C0G Taiwan Semiconductor Corporation TST10L60CW_A1601.pdf Description: DIODE SCHOTTKY 60V 5A TO220AB
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H120CW C0G TST20H120CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 120V 10A TO220AB
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H150CW C0G TST20H150CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 150V 10A TO220AB
auf Bestellung 936 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H200CW C0G TST20H200CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 955 Stücke:
Lieferzeit 21-28 Tag (e)
TST20L200CW C0G TST20L200CW C0G Taiwan Semiconductor Corporation TST20L100CW-TST20L200CW%20_C2104.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 902 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.78 EUR
10+ 4.31 EUR
100+ 3.47 EUR
500+ 2.85 EUR
Mindestbestellmenge: 6
TST30H150CW C0G TST30H150CW C0G Taiwan Semiconductor Corporation TST30H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 929 Stücke:
Lieferzeit 21-28 Tag (e)
TST30H200CW C0G TST30H200CW C0G Taiwan Semiconductor Corporation TST30H100CW-TST30H200CW_F2104.pdf Description: DIODE SCHOTTKY 200V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L100CW C0G TST30L100CW C0G Taiwan Semiconductor Corporation TST30L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 100V 15A TO220AB
auf Bestellung 906 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L120CW C0G TST30L120CW C0G Taiwan Semiconductor Corporation TST30L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 120V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TSM8N80CZ C0G TSM8N80_D15.pdf
TSM8N80CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
TSM900N06CH X0G
TSM900N06CH X0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 48594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
75+ 1.18 EUR
150+ 0.86 EUR
525+ 0.72 EUR
1050+ 0.61 EUR
2025+ 0.54 EUR
5025+ 0.52 EUR
10050+ 0.48 EUR
Mindestbestellmenge: 19
TSM900N06CW RPG
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.34 EUR
5000+ 0.33 EUR
Mindestbestellmenge: 2500
TSM900N06CW RPG
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 10020 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
TSM900N10CH X0G
TSM900N10CH X0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Produkt ist nicht verfügbar
TSM900N10CP ROG
TSM900N10CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.66 EUR
12500+ 0.61 EUR
Mindestbestellmenge: 2500
TSM900N10CP ROG
TSM900N10CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 29089 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.85 EUR
17+ 1.59 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
TSM9435CS RLG TSM9435CS_D1602.pdf
TSM9435CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM9435CS RLG TSM9435CS_D1602.pdf
TSM9435CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2562 Stücke:
Lieferzeit 21-28 Tag (e)
TSM950N10CW RPG
TSM950N10CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.56 EUR
5000+ 0.53 EUR
Mindestbestellmenge: 2500
TSM950N10CW RPG
TSM950N10CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 14762 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
TSM9N90ECI C0G
TSM9N90ECI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
TSM9N90ECZ C0G
TSM9N90ECZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
TSP10H200S S1G TSP10H200S_D15.pdf
TSP10H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10H45S S1G TSP10H45S%20SERIES_E2103.pdf
TSP10H45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10H45S S1G TSP10H45S%20SERIES_E2103.pdf
TSP10H45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U100S S1G TSP10U100S%20SERIES_E15.pdf
TSP10U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U100S S1G TSP10U100S%20SERIES_E15.pdf
TSP10U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 37890 Stücke:
Lieferzeit 21-28 Tag (e)
TSP10U45S S1G TSP10U45S_F15.pdf
TSP10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
Produkt ist nicht verfügbar
TSP10U45S S1G TSP10U45S_F15.pdf
TSP10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
Produkt ist nicht verfügbar
TSP12U120S S1G TSP12U120S_F2103.pdf
TSP12U120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP12U120S S1G TSP12U120S_F2103.pdf
TSP12U120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 7370 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H120S S1G TSP12U120S_F2103.pdf
TSP15H120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
TSP15H120S S1G TSP12U120S_F2103.pdf
TSP15H120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
TSP15H150S S1G TSP15H120S%20SERIES_C2103.pdf
TSP15H150S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H150S S1G TSP15H120S%20SERIES_C2103.pdf
TSP15H150S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 5732 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H200S S1G TSP15H120S%20SERIES_B15.pdf
TSP15H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15H200S S1G TSP15H120S%20SERIES_B15.pdf
TSP15H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 7105 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15U100S S1G TSP15U100S_E2103.pdf
TSP15U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO277A
Produkt ist nicht verfügbar
TSP15U100S S1G TSP15U100S_E2103.pdf
TSP15U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO277A
auf Bestellung 1040 Stücke:
Lieferzeit 21-28 Tag (e)
TSP15U50S S1G
TSP15U50S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.79 EUR
3000+ 1.7 EUR
Mindestbestellmenge: 1500
TSP15U50S S1G
TSP15U50S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3392 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.11 EUR
Mindestbestellmenge: 7
TSP20U60S S1G TSP20U60S_F2103.pdf
TSP20U60S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 34500 Stücke:
Lieferzeit 21-28 Tag (e)
TSP20U60S S1G TSP20U60S_F2103.pdf
TSP20U60S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 37426 Stücke:
Lieferzeit 21-28 Tag (e)
TSPB10U45S S1G TSPB10U45S_G15.pdf
TSPB10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
TSPB10U45S S1G TSPB10U45S_G15.pdf
TSPB10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
TSS4B03G D2G TSS4B01G%20SERIES_E15.pdf
TSS4B03G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A TS4B
Produkt ist nicht verfügbar
TSS54U RGG
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.17 EUR
12000+ 0.14 EUR
Mindestbestellmenge: 4000
TSS54U RGG
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 29190 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
39+ 0.68 EUR
100+ 0.34 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
TSSA3U45 R3G TSSA3U45_N1707.pdf
TSSA3U45 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A DO214AC
auf Bestellung 21638 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA3U60 R3G TSSA3U60_F1612.pdf
TSSA3U60 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AC
auf Bestellung 6496 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA5U50 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U50 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AC
auf Bestellung 4662 Stücke:
Lieferzeit 21-28 Tag (e)
TSSA5U60 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U60 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AC
auf Bestellung 2414 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 1054 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 297000 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 299431 Stücke:
Lieferzeit 21-28 Tag (e)
TSSE3U60 RVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Produkt ist nicht verfügbar
TSSE3U60 RVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
TST10H150CW C0G TST10H100CW%20SERIES_A14.pdf
TST10H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A TO220AB
auf Bestellung 956 Stücke:
Lieferzeit 21-28 Tag (e)
TST10L200CW C0G TST10H100CW-TST10H200CW_B2104.pdf
TST10L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.97 EUR
10+ 4.45 EUR
100+ 3.57 EUR
500+ 2.94 EUR
Mindestbestellmenge: 6
TST10L60CW C0G TST10L60CW_A1601.pdf
TST10L60CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A TO220AB
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H120CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 10A TO220AB
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H150CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A TO220AB
auf Bestellung 936 Stücke:
Lieferzeit 21-28 Tag (e)
TST20H200CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 955 Stücke:
Lieferzeit 21-28 Tag (e)
TST20L200CW C0G TST20L100CW-TST20L200CW%20_C2104.pdf
TST20L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 902 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.78 EUR
10+ 4.31 EUR
100+ 3.47 EUR
500+ 2.85 EUR
Mindestbestellmenge: 6
TST30H150CW C0G TST30H100CW%20SERIES_E14.pdf
TST30H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 929 Stücke:
Lieferzeit 21-28 Tag (e)
TST30H200CW C0G TST30H100CW-TST30H200CW_F2104.pdf
TST30H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L100CW C0G TST30L100CW%20SERIES_B14.pdf
TST30L100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO220AB
auf Bestellung 906 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L120CW C0G TST30L100CW%20SERIES_B14.pdf
TST30L120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
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