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TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation TSS54U_C1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 20000 Stücke:
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4000+0.07 EUR
Mindestbestellmenge: 4000
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TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation TSS54U_C1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 24437 Stücke:
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63+0.28 EUR
106+0.17 EUR
140+0.13 EUR
500+0.11 EUR
Mindestbestellmenge: 63
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TSSA3U45 R3G TSSA3U45 R3G Taiwan Semiconductor Corporation TSSA3U45_N1707.pdf Description: DIODE SCHOTTKY 45V 3A DO214AC
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TSSA3U60 R3G TSSA3U60 R3G Taiwan Semiconductor Corporation TSSA3U60_F1612.pdf Description: DIODE SCHOTTKY 60V 3A DO214AC
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TSSA5U50 E3G TSSA5U50 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 50V 5A DO214AC
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TSSA5U60 E3G TSSA5U60 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 60V 5A DO214AC
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TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
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TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
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TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSSE3U60 RVG TSSE3U60 RVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSSE3U60 RVG TSSE3U60 RVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TST10H150CW C0G TST10H150CW C0G Taiwan Semiconductor Corporation TST10H100CW%20SERIES_A14.pdf Description: DIODE SCHOTTKY 150V 5A TO220AB
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TST10L200CW C0G TST10L200CW C0G Taiwan Semiconductor Corporation TST10H100CW-TST10H200CW_B2104.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 901 Stücke:
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6+3.36 EUR
10+3.01 EUR
100+2.42 EUR
500+1.99 EUR
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TST10L60CW C0G TST10L60CW C0G Taiwan Semiconductor Corporation TST10L60CW_A1601.pdf Description: DIODE SCHOTTKY 60V 5A TO220AB
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TST20H120CW C0G TST20H120CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 120V 10A TO220AB
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TST20H150CW C0G TST20H150CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 150V 10A TO220AB
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TST20H200CW C0G TST20H200CW C0G Taiwan Semiconductor Corporation TST20H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
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TST20L200CW C0G TST20L200CW C0G Taiwan Semiconductor Corporation TST20L100CW-TST20L200CW%20_C2104.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 902 Stücke:
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6+3.24 EUR
10+2.92 EUR
100+2.35 EUR
500+1.93 EUR
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TST30H150CW C0G TST30H150CW C0G Taiwan Semiconductor Corporation TST30H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 929 Stücke:
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TST30H200CW C0G TST30H200CW C0G Taiwan Semiconductor Corporation TST30H100CW-TST30H200CW_F2104.pdf Description: DIODE SCHOTTKY 200V 15A TO220AB
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TST30L100CW C0G TST30L100CW C0G Taiwan Semiconductor Corporation TST30L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 100V 15A TO220AB
auf Bestellung 906 Stücke:
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TST30L120CW C0G TST30L120CW C0G Taiwan Semiconductor Corporation TST30L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 120V 15A TO220AB
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TST30L150CW C0G TST30L150CW C0G Taiwan Semiconductor Corporation TST30L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 609 Stücke:
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TST30L200CW C0G TST30L200CW C0G Taiwan Semiconductor Corporation TST30H100CW-TST30H200CW_F2104.pdf Description: DIODE SCHOTTKY 200V 15A TO220AB
auf Bestellung 624 Stücke:
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5+3.89 EUR
10+3.48 EUR
100+2.8 EUR
500+2.3 EUR
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TST30L60CW C0G TST30L60CW C0G Taiwan Semiconductor Corporation TST30L45CW%20SERIES_B15.pdf Description: DIODE SCHOTTKY 60V 15A TO220AB
auf Bestellung 890 Stücke:
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TST30U60C C0G TST30U60C C0G Taiwan Semiconductor Corporation TST30U45C%20SERIES_E2104.pdf Description: DIODE SCHOTTKY 60V 15A TO220AB
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TST30U60CW C0G TST30U60CW C0G Taiwan Semiconductor Corporation TST30L45CW-TST30L60CW_D2104.pdf Description: DIODE SCHOTTKY 60V 15A TO220AB
auf Bestellung 980 Stücke:
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TST40L100CW C0G TST40L100CW C0G Taiwan Semiconductor Corporation TST40L100CW%20SERIES_B14.pdf Description: DIODE SCHOTTKY 100V 20A TO220AB
auf Bestellung 929 Stücke:
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TST40L200CW C0G TST40L200CW C0G Taiwan Semiconductor Corporation TST40L100CW-TST40L200CW%20C2104.pdf Description: DIODE SCHOTTKY 200V 20A TO220AB
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UDZS15B RRG UDZS15B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 15V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 11 V
auf Bestellung 3000 Stücke:
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3000+0.062 EUR
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UDZS15B RRG UDZS15B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 15V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 11 V
auf Bestellung 7570 Stücke:
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56+0.32 EUR
94+0.19 EUR
152+0.12 EUR
500+0.085 EUR
1000+0.075 EUR
Mindestbestellmenge: 56
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UG8J C0G UG8J C0G Taiwan Semiconductor Corporation UG8J_H1511.pdf Description: DIODE GEN PURP 600V 8A TO220AC
auf Bestellung 989 Stücke:
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UGF1008G C0G UGF1008G C0G Taiwan Semiconductor Corporation UGF1004G%20SERIES_E15.pdf Description: DIODE GEN PURP 600V 10A ITO220AB
auf Bestellung 1408 Stücke:
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US1B R3G US1B R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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US1B R3G US1B R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 134 Stücke:
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18+1.02 EUR
26+0.69 EUR
100+0.47 EUR
Mindestbestellmenge: 18
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US1D R3G US1D R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1800 Stücke:
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1800+0.31 EUR
Mindestbestellmenge: 1800
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US1D R3G US1D R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2562 Stücke:
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15+1.2 EUR
24+0.75 EUR
100+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 15
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US1G R3G US1G R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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US1G R3G US1G R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 141 Stücke:
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33+0.55 EUR
43+0.41 EUR
Mindestbestellmenge: 33
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US1J R3G US1J R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3600 Stücke:
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1800+0.29 EUR
3600+0.26 EUR
Mindestbestellmenge: 1800
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US1J R3G US1J R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 4349 Stücke:
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19+0.95 EUR
28+0.63 EUR
100+0.43 EUR
500+0.34 EUR
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US1K R3G US1K R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
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US1K R3G US1K R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
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US1M R3G US1M R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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US1M R3G US1M R3G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13732 Stücke:
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22+0.83 EUR
31+0.57 EUR
100+0.43 EUR
500+0.31 EUR
Mindestbestellmenge: 22
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LL4001G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 50V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4001G R1G 1N4001G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4001GHR1G 1N4001GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4002G R1G 1N4002G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4002GHR1G 1N4002GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4003G R1G 1N4003G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4003GHR1G 1N4003GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4004G R1G 1N4004G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4004GHR1G 1N4004GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4005G R1G 1N4005G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4005GHR1G 1N4005GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4006G R1G 1N4006G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4006GHR1G 1N4006GHR1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4007G R1G 1N4007G R1G Taiwan Semiconductor Corporation 1N4001G%20SERIES_P2104.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSS54U RGG TSS54U_C1601.pdf
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.07 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
TSS54U RGG TSS54U_C1601.pdf
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 24437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
106+0.17 EUR
140+0.13 EUR
500+0.11 EUR
Mindestbestellmenge: 63
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TSSA3U45 R3G TSSA3U45_N1707.pdf
TSSA3U45 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A DO214AC
auf Bestellung 21638 Stücke:
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TSSA3U60 R3G TSSA3U60_F1612.pdf
TSSA3U60 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AC
auf Bestellung 6496 Stücke:
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TSSA5U50 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U50 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AC
auf Bestellung 4662 Stücke:
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TSSA5U60 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U60 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AC
auf Bestellung 2414 Stücke:
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TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 3000 Stücke:
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TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 1054 Stücke:
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TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 297000 Stücke:
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TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 299431 Stücke:
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TSSE3U60 RVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Produkt ist nicht verfügbar
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TSSE3U60 RVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 6 Stücke:
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TST10H150CW C0G TST10H100CW%20SERIES_A14.pdf
TST10H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A TO220AB
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
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TST10L200CW C0G TST10H100CW-TST10H200CW_B2104.pdf
TST10L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+3.01 EUR
100+2.42 EUR
500+1.99 EUR
Mindestbestellmenge: 6
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TST10L60CW C0G TST10L60CW_A1601.pdf
TST10L60CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A TO220AB
auf Bestellung 950 Stücke:
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TST20H120CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 10A TO220AB
auf Bestellung 970 Stücke:
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TST20H150CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A TO220AB
auf Bestellung 936 Stücke:
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TST20H200CW C0G TST20H100CW%20SERIES_E14.pdf
TST20H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 955 Stücke:
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TST20L200CW C0G TST20L100CW-TST20L200CW%20_C2104.pdf
TST20L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.92 EUR
100+2.35 EUR
500+1.93 EUR
Mindestbestellmenge: 6
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TST30H150CW C0G TST30H100CW%20SERIES_E14.pdf
TST30H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 929 Stücke:
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TST30H200CW C0G TST30H100CW-TST30H200CW_F2104.pdf
TST30H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO220AB
auf Bestellung 1000 Stücke:
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TST30L100CW C0G TST30L100CW%20SERIES_B14.pdf
TST30L100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO220AB
auf Bestellung 906 Stücke:
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TST30L120CW C0G TST30L100CW%20SERIES_B14.pdf
TST30L120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO220AB
auf Bestellung 1000 Stücke:
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TST30L150CW C0G TST30L100CW%20SERIES_B14.pdf
TST30L150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO220AB
auf Bestellung 609 Stücke:
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TST30L200CW C0G TST30H100CW-TST30H200CW_F2104.pdf
TST30L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO220AB
auf Bestellung 624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+3.48 EUR
100+2.8 EUR
500+2.3 EUR
Mindestbestellmenge: 5
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TST30L60CW C0G TST30L45CW%20SERIES_B15.pdf
TST30L60CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A TO220AB
auf Bestellung 890 Stücke:
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TST30U60C C0G TST30U45C%20SERIES_E2104.pdf
TST30U60C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A TO220AB
auf Bestellung 815 Stücke:
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TST30U60CW C0G TST30L45CW-TST30L60CW_D2104.pdf
TST30U60CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A TO220AB
auf Bestellung 980 Stücke:
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TST40L100CW C0G TST40L100CW%20SERIES_B14.pdf
TST40L100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A TO220AB
auf Bestellung 929 Stücke:
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TST40L200CW C0G TST40L100CW-TST40L200CW%20C2104.pdf
TST40L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 20A TO220AB
Produkt ist nicht verfügbar
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UDZS15B RRG UDZS3V6B SERIES_H2212.pdf
UDZS15B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 11 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
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UDZS15B RRG UDZS3V6B SERIES_H2212.pdf
UDZS15B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 11 V
auf Bestellung 7570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
94+0.19 EUR
152+0.12 EUR
500+0.085 EUR
1000+0.075 EUR
Mindestbestellmenge: 56
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UG8J C0G UG8J_H1511.pdf
UG8J C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
auf Bestellung 989 Stücke:
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UGF1008G C0G UGF1004G%20SERIES_E15.pdf
UGF1008G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AB
auf Bestellung 1408 Stücke:
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US1B R3G US1A%20SERIES_N2102.pdf
US1B R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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US1B R3G US1A%20SERIES_N2102.pdf
US1B R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
26+0.69 EUR
100+0.47 EUR
Mindestbestellmenge: 18
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US1D R3G US1A%20SERIES_N2102.pdf
US1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.31 EUR
Mindestbestellmenge: 1800
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US1D R3G US1A%20SERIES_N2102.pdf
US1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
24+0.75 EUR
100+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 15
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US1G R3G US1A%20SERIES_N2102.pdf
US1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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US1G R3G US1A%20SERIES_N2102.pdf
US1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
43+0.41 EUR
Mindestbestellmenge: 33
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US1J R3G US1A%20SERIES_N2102.pdf
US1J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.29 EUR
3600+0.26 EUR
Mindestbestellmenge: 1800
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US1J R3G US1A%20SERIES_N2102.pdf
US1J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 4349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
28+0.63 EUR
100+0.43 EUR
500+0.34 EUR
Mindestbestellmenge: 19
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US1K R3G US1A%20SERIES_N2102.pdf
US1K R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
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US1K R3G US1A%20SERIES_N2102.pdf
US1K R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
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US1M R3G US1A%20SERIES_N2102.pdf
US1M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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US1M R3G US1A%20SERIES_N2102.pdf
US1M R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.57 EUR
100+0.43 EUR
500+0.31 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
LL4001G L0 LL4001G%20SERIES_E15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4001G R1G 1N4001G%20SERIES_P2104.pdf
1N4001G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4001GHR1G 1N4001G%20SERIES_P2104.pdf
1N4001GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4002G R1G 1N4001G%20SERIES_P2104.pdf
1N4002G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4002GHR1G 1N4001G%20SERIES_P2104.pdf
1N4002GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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1N4003G R1G 1N4001G%20SERIES_P2104.pdf
1N4003G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4003GHR1G 1N4001G%20SERIES_P2104.pdf
1N4003GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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1N4004G R1G 1N4001G%20SERIES_P2104.pdf
1N4004G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4004GHR1G 1N4001G%20SERIES_P2104.pdf
1N4004GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4005G R1G 1N4001G%20SERIES_P2104.pdf
1N4005G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4005GHR1G 1N4001G%20SERIES_P2104.pdf
1N4005GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4006G R1G 1N4001G%20SERIES_P2104.pdf
1N4006G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4006GHR1G 1N4001G%20SERIES_P2104.pdf
1N4006GHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4007G R1G 1N4001G%20SERIES_P2104.pdf
1N4007G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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