Die Produkte taiwan semiconductor corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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SMBJ18A R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 18VWM 29.2VC DO214AA Current - Peak Pulse (10/1000µs): 21.5A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 29.2V Voltage - Breakdown (Min): 20V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 18V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 832 Stücke - Preis und Lieferfrist anzeigen
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SMCJ15CA V7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Reverse Standoff (Typ): 15V Bidirectional Channels: 1 Type: Zener Part Status: Active Applications: Telecom Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 64A Voltage - Clamping (Max) @ Ipp: 24.4V Voltage - Breakdown (Min): 16.7V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1335 Stücke - Preis und Lieferfrist anzeigen
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SR30100PT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BAW56 RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 70V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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BZD27C27PHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 1W SUB SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±7.03% |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZD27C27PHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±7.03% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.JPG "BC547A B1G") |
BC547A B1G |
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Taiwan Semiconductor Corporation |
Description: TRANSISTOR, NPN, 45V, 0.1A, 110A Supplier Device Package: TO-92 DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Power - Max: 500 mW Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BC547B B1G |
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Taiwan Semiconductor Corporation |
Description: TRANSISTOR, NPN, 45V, 0.1A, 200A Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-92 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PGSMAJ5.0CAHM2G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5VWM 9.2VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 9.2V Voltage - Breakdown (Min): 6.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 43.5A Type: Zener Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PGSMAJ5.0CA E3G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5VWM 9.2VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 9.2V Voltage - Breakdown (Min): 6.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 43.5A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PGSMAJ5.0CAHE3G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5VWM 9.2VC DO214AC Voltage - Breakdown (Min): 6.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 43.5A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 9.2V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PGSMAJ5.0CA E2G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 5VWM 9.2VC DO214AC Power Line Protection: No Part Status: Obsolete Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 9.2V Voltage - Breakdown (Min): 6.4V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 43.5A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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HER303G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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HER303G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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HER303G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBRF10100CT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 10A ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 800 Stücke Lieferzeit 21-28 Tag (e) |
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MBRF10100CTHC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBRF10100CTC0 |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
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MBRF20200CT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 20A ITO220AB Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Diode Type: Schottky |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBRF20200CT C0 |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 200V ITO220AB Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBRF20200CTHC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 200V ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1MLW RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123W Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Supplier Device Package: SOD-123W Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2934 Stücke - Preis und Lieferfrist anzeigen
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123W Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
auf Bestellung 8644 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2934 Stücke - Preis und Lieferfrist anzeigen
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RS1MFS MWG |
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Taiwan Semiconductor Corporation |
Description: DIODE Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Taiwan Semiconductor Corporation |
Description: DIODE Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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RS1MFSHMWG |
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Taiwan Semiconductor Corporation |
Description: DIODE Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Reverse Recovery Time (trr): 500 ns Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 |
auf Bestellung 14000 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Part Status: Active Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 1A |
auf Bestellung 14002 Stücke Lieferzeit 21-28 Tag (e) |
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RS1MLWHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123W Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2897 Stücke - Preis und Lieferfrist anzeigen
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123W Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
auf Bestellung 10540 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2897 Stücke - Preis und Lieferfrist anzeigen
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RS1MLS RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1.2A SOD123HE Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 1.2A Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5279 Stücke - Preis und Lieferfrist anzeigen
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RS1MLSHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1.2A SOD123HE Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 1.2A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4734 Stücke - Preis und Lieferfrist anzeigen
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RS1MFS |
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Taiwan Semiconductor Corporation |
Description: DIODE, FAST, 1A, 1000V Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1M R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AC, SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 15 Stücke Lieferzeit 21-28 Tag (e) |
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RS1JFSHMWG |
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Taiwan Semiconductor Corporation |
Description: DIODE Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 1246 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6800 Stücke - Preis und Lieferfrist anzeigen
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RS1JLSHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.2A SOD123 Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 1.2A Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123H Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1B R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Manufacturer: Taiwan Semiconductor Corporation Base Part Number: RS1B Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) |
auf Bestellung 1800 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: RS1B Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) |
auf Bestellung 3858 Stücke Lieferzeit 21-28 Tag (e) |
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RS1BL RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: RS1B Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Current - Average Rectified (Io): 800mA Voltage - DC Reverse (Vr) (Max): 100V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Base Part Number: RS1B Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Current - Average Rectified (Io): 800mA Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation |
auf Bestellung 11500 Stücke Lieferzeit 21-28 Tag (e) |
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RS1BL RTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL MHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL MQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL MTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL RUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1B M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL RQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BLHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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RS1BL R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 800MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1KSMB62CAHR5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 53V Voltage - Breakdown (Min): 58.9V Voltage - Clamping (Max) @ Ipp: 85V Current - Peak Pulse (10/1000µs): 11.8A Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1KSMB62CA R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 53V Voltage - Breakdown (Min): 58.9V Voltage - Clamping (Max) @ Ipp: 85V Current - Peak Pulse (10/1000µs): 11.8A Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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P6SMB62CAHR5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 53V Voltage - Breakdown (Min): 58.9V Voltage - Clamping (Max) @ Ipp: 85V Current - Peak Pulse (10/1000µs): 7.4A Power - Peak Pulse: 600W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1KSMB62CAHM4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 1000W (1kW) Current - Peak Pulse (10/1000µs): 11.8A Voltage - Clamping (Max) @ Ipp: 85V Voltage - Breakdown (Min): 58.9V Voltage - Reverse Standoff (Typ): 53V Bidirectional Channels: 1 Type: Zener |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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P6SMB62CAHM4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 600W Current - Peak Pulse (10/1000µs): 7.4A Voltage - Clamping (Max) @ Ipp: 85V Voltage - Breakdown (Min): 58.9V Voltage - Reverse Standoff (Typ): 53V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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P6SMB62CA M4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 600W Current - Peak Pulse (10/1000µs): 7.4A Voltage - Clamping (Max) @ Ipp: 85V Voltage - Breakdown (Min): 58.9V Voltage - Reverse Standoff (Typ): 53V Bidirectional Channels: 1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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TSM80N08CZ C0G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 75V 80A TO220 Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Power Dissipation (Max): 113.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V |
auf Bestellung 695 Stücke Lieferzeit 21-28 Tag (e) |
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P6SMB62CA R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Power - Peak Pulse: 600W Current - Peak Pulse (10/1000µs): 7.4A Voltage - Clamping (Max) @ Ipp: 85V Voltage - Breakdown (Min): 58.9V Voltage - Reverse Standoff (Typ): 53V Bidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: P6SMB62 Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No |
auf Bestellung 2550 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
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1.5KE120A A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 102VWM 165VC DO201 Voltage - Reverse Standoff (Typ): 102V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Box (TB) Supplier Device Package: DO-201 Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 9.5A Voltage - Clamping (Max) @ Ipp: 165V Voltage - Breakdown (Min): 114V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE12A A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO201 Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 10.2V Current - Peak Pulse (10/1000µs): 94A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE120A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 102VWM 165VC DO201 Type: Zener Part Status: Active Packaging: Bulk Supplier Device Package: DO-201 Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 9.5A Voltage - Clamping (Max) @ Ipp: 165V Voltage - Breakdown (Min): 114V Voltage - Reverse Standoff (Typ): 102V Unidirectional Channels: 1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE12A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO201 Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 10.2V Current - Peak Pulse (10/1000µs): 94A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE120CA A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 102VWM 165VC DO201 Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 165V Voltage - Breakdown (Min): 114V Bidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 102V Current - Peak Pulse (10/1000µs): 9.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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P4KE51A R1G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 43.6V 70.1V DO204AL Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 43.6V Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Current - Peak Pulse (10/1000µs): 6A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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P6SMB62CA R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 53VWM 85VC DO214AA Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 600W Current - Peak Pulse (10/1000µs): 7.4A Voltage - Clamping (Max) @ Ipp: 85V Voltage - Breakdown (Min): 58.9V Voltage - Reverse Standoff (Typ): 53V Bidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: P6SMB62 Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2550 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
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BZX85C13 R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 1.3W DO204AL Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -65°C ~ 200°C (TJ) Tolerance: ±5% Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500 nA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 920 Stücke - Preis und Lieferfrist anzeigen
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BZX85C13 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 1.3W DO204AL Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 500 nA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Power - Max: 1.3 W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZD27C33PWH |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SOD123W Supplier Device Package: SOD-123W Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Current - Reverse Leakage @ Vr: 1µA @ 24V Impedance (Max) (Zzt): 15 Ohms Power - Max: 1W Tolerance: ±5% Voltage - Zener (Nom) (Vz): 33V Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 11800 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SOD123W Supplier Device Package: SOD-123W Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Current - Reverse Leakage @ Vr: 1µA @ 24V Impedance (Max) (Zzt): 15 Ohms Power - Max: 1W Tolerance: ±5% Voltage - Zener (Nom) (Vz): 33V Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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BZD27C33PW |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SOD123W Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Voltage - Zener (Nom) (Vz): 33V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 24V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Manufacturer: Taiwan Semiconductor Corporation Base Part Number: BZD27 |
auf Bestellung 2745 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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BZD27C33P RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 33 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 24 V |
auf Bestellung 1871 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ30AHM6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AB Part Status: Active Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Voltage - Clamping (Max) @ Ipp: 48.4V Voltage - Breakdown (Min): 33.3V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 103A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
auf Bestellung 2480 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ30A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AB Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 48.4V Voltage - Breakdown (Min): 33.3V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 103A Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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.jpg "TSM2N60ECP ROG") |
TSM2N60ECP ROG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 2A TO252 Base Part Number: TSM2 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 52.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 2A TO252 Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: TSM2 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 52.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 2487 Stücke Lieferzeit 21-28 Tag (e) |
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| KBP206G C2 |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 2A KBP Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: KBP Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBP Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| KBP206G C2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 2A KBP Current - Reverse Leakage @ Vr: 10 µA @ 800 V Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: KBP Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBP Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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1N5406G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard |
auf Bestellung 25 Stücke Lieferzeit 21-28 Tag (e) |
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| SMBJ18A R5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC DO214AA
Current - Peak Pulse (10/1000µs): 21.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 18V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 18VWM 29.2VC DO214AA
Current - Peak Pulse (10/1000µs): 21.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 18V
auf Bestellung 832 Stücke - Preis und Lieferfrist anzeigen
| SMCJ15CA V7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 15V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Applications: Telecom
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 64A
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15V 24.4V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 15V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Applications: Telecom
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 64A
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
auf Bestellung 1335 Stücke - Preis und Lieferfrist anzeigen
| SR30100PT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
| BAW56 RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| BZD27C27PHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±7.03%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±7.03%
| BZD27C27PHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
| BC547A B1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TRANSISTOR, NPN, 45V, 0.1A, 110A
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Power - Max: 500 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANSISTOR, NPN, 45V, 0.1A, 110A
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Power - Max: 500 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
| BC547B B1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TRANSISTOR, NPN, 45V, 0.1A, 200A
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANSISTOR, NPN, 45V, 0.1A, 200A
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
| PGSMAJ5.0CAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 9.2VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Type: Zener
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 9.2VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Type: Zener
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
| PGSMAJ5.0CA E3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 9.2VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 9.2VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
| PGSMAJ5.0CAHE3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 9.2VC DO214AC
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 9.2VC DO214AC
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
| PGSMAJ5.0CA E2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 9.2VC DO214AC
Power Line Protection: No
Part Status: Obsolete
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 9.2VC DO214AC
Power Line Protection: No
Part Status: Obsolete
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 43.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
| HER303G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A DO201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| HER303G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A DO201AD
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
| HER303G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A DO201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
| MBRF10100CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 800 Stücke Description: DIODE SCHOTTKY 100V 10A ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| MBRF10100CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| MBRF10100CTC0 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 100V ITO220AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| MBRF20200CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 20A ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 200V 20A ITO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Diode Type: Schottky
| MBRF20200CT C0 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 200V ITO220AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
| MBRF20200CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
| RS1MLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: SOD-123W
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: SOD-123W
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11578 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
auf Bestellung 8644 Stücke Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8934 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MFS MWG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| RS1MFS MWG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
auf Bestellung 2500 Stücke Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Lieferzeit 21-28 Tag (e)
|
| RS1MFSHMWG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
auf Bestellung 14000 Stücke Description: DIODE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Lieferzeit 21-28 Tag (e)
auf Bestellung 14002 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MFSHMWG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Active
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
auf Bestellung 14002 Stücke Description: DIODE
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Active
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Lieferzeit 21-28 Tag (e)
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MLWHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 9000 Stücke Description: DIODE GEN PURP 1KV 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13437 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MLWHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 10540 Stücke Description: DIODE GEN PURP 1KV 1A SOD123W
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 11897 Stücke - Preis und Lieferfrist anzeigen
|
| RS1MLS RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1.2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1.2A SOD123HE
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1.2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
auf Bestellung 5279 Stücke - Preis und Lieferfrist anzeigen
| RS1MLSHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1.2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1.2A SOD123HE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1.2A
auf Bestellung 4734 Stücke - Preis und Lieferfrist anzeigen
| RS1MFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE, FAST, 1A, 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
| RS1M R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
| RS1M R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 15 Stücke Description: DIODE GEN PURP 1KV 1A DO214AC
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
| RS1JFSHMWG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 1246 Stücke Description: DIODE
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6800 Stücke - Preis und Lieferfrist anzeigen
|
| RS1JLSHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.2A SOD123
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1.2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.2A SOD123
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1.2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123H
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| RS1B R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke Description: DIODE GEN PURP 100V 1A DO214AC
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3858 Stücke - Preis und Lieferfrist anzeigen
| RS1B R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 3858 Stücke Description: DIODE GEN PURP 100V 1A DO214AC
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
| RS1BL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - DC Reverse (Vr) (Max): 100V
auf Bestellung 6000 Stücke Description: DIODE GEN PURP 100V 800MA SUBSMA
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - DC Reverse (Vr) (Max): 100V
Lieferzeit 21-28 Tag (e)
auf Bestellung 11500 Stücke - Preis und Lieferfrist anzeigen
| RS1BL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 11500 Stücke Description: DIODE GEN PURP 100V 800MA SUBSMA
Base Part Number: RS1B
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| RS1BL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1B M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
| RS1BL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 800MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| 1KSMB62CAHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 11.8A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 11.8A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| 1KSMB62CA R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 11.8A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 11.8A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| P6SMB62CAHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.4A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 53V
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Current - Peak Pulse (10/1000µs): 7.4A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| 1KSMB62CAHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
| P6SMB62CAHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| P6SMB62CA M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 53VWM 85VC DO214AA
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
| TSM80N08CZ C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 75V 80A TO220
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
auf Bestellung 695 Stücke Description: MOSFET N-CHANNEL 75V 80A TO220
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
Lieferzeit 21-28 Tag (e)
|
| P6SMB62CA R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: P6SMB62
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
auf Bestellung 2550 Stücke Description: TVS DIODE 53VWM 85VC DO214AA
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: P6SMB62
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
| 1.5KE120A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO201
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 102VWM 165VC DO201
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
| 1.5KE12A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 94A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 10.2VWM 16.7VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 94A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
| 1.5KE120A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO201
Type: Zener
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 102VWM 165VC DO201
Type: Zener
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
| 1.5KE12A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO201
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 94A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 10.2VWM 16.7VC DO201
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 94A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
| 1.5KE120CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO201
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 9.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 102VWM 165VC DO201
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 9.5A
| P4KE51A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6V 70.1V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43.6V
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Current - Peak Pulse (10/1000µs): 6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 43.6V 70.1V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43.6V
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Current - Peak Pulse (10/1000µs): 6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| P6SMB62CA R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: P6SMB62
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2550 Stücke Description: TVS DIODE 53VWM 85VC DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 85V
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: P6SMB62
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
| BZX85C13 R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.3W DO204AL
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Tolerance: ±5%
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 13V 1.3W DO204AL
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Tolerance: ±5%
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 920 Stücke - Preis und Lieferfrist anzeigen
| BZX85C13 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.3W DO204AL
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 13V 1.3W DO204AL
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
| BZD27C33PWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SOD123W
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 24V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 11800 Stücke Description: DIODE ZENER 33V 1W SOD123W
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 24V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| BZD27C33PWH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SOD123W
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 24V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke Description: DIODE ZENER 33V 1W SOD123W
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 24V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11800 Stücke - Preis und Lieferfrist anzeigen
| BZD27C33PW |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SOD123W
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 24V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: BZD27
auf Bestellung 2745 Stücke Description: DIODE ZENER 33V 1W SOD123W
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 24V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: BZD27
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| BZD27C33P RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
auf Bestellung 1871 Stücke Description: DIODE ZENER 33V 1W SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ30AHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 103A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
auf Bestellung 2480 Stücke Description: TVS DIODE 30VWM 48.4VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 103A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ30A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 103A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
auf Bestellung 3000 Stücke Description: TVS DIODE 30VWM 48.4VC DO214AB
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 103A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| TSM2N60ECP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 2A TO252
Base Part Number: TSM2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 600V 2A TO252
Base Part Number: TSM2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 2487 Stücke - Preis und Lieferfrist anzeigen
| TSM2N60ECP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 2A TO252
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2487 Stücke Description: MOSFET N-CHANNEL 600V 2A TO252
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
| KBP206G C2 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 2A KBP
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
| KBP206G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 2A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 25 Stücke Description: DIODE GEN PURP 600V 3A DO201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
|
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