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TSM80N950CP ROG TSM80N950CP ROG Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CHANNEL 800V 6A TO252
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TSM80N950CP ROG TSM80N950CP ROG Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CHANNEL 800V 6A TO252
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TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor Corporation TSM850N06CX_C1811.pdf Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
auf Bestellung 21000 Stücke:
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3000+0.19 EUR
9000+0.17 EUR
21000+0.16 EUR
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TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor Corporation TSM850N06CX_C1811.pdf Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
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500+0.29 EUR
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TSM8568CS RLG TSM8568CS RLG Taiwan Semiconductor Corporation TSM8568CS_B1611.pdf Description: MOSFET N/P-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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TSM8568CS RLG TSM8568CS RLG Taiwan Semiconductor Corporation TSM8568CS_B1611.pdf Description: MOSFET N/P-CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 21149 Stücke:
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TSM85N10CZ C0G TSM85N10CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 81A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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TSM8N50CH C5G TSM8N50CH C5G Taiwan Semiconductor Corporation TSM8N50_C15.pdf Description: MOSFET N-CH 500V 7.2A TO251
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TSM8N50CP ROG TSM8N50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N50CP ROG TSM8N50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N70CI C0G TSM8N70CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N80CI C0G TSM8N80CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N80CZ C0G TSM8N80CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
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TSM900N06CH X0G TSM900N06CH X0G Taiwan Semiconductor Corporation TSM900N06CH_A2205.pdf Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 19343 Stücke:
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12+1.5 EUR
75+0.64 EUR
150+0.57 EUR
525+0.46 EUR
1050+0.42 EUR
2025+0.38 EUR
5025+0.34 EUR
10050+0.32 EUR
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TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Produkt ist nicht verfügbar
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TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 1368 Stücke:
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500+0.32 EUR
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TSM900N10CH X0G TSM900N10CH X0G Taiwan Semiconductor Corporation TSM900N10_A15.pdf Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Produkt ist nicht verfügbar
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TSM900N10CP ROG TSM900N10CP ROG Taiwan Semiconductor Corporation TSM900N10_A15.pdf Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 20000 Stücke:
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2500+0.46 EUR
5000+0.41 EUR
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12500+0.39 EUR
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TSM900N10CP ROG TSM900N10CP ROG Taiwan Semiconductor Corporation TSM900N10_A15.pdf Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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500+0.57 EUR
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TSM9435CS RLG TSM9435CS RLG Taiwan Semiconductor Corporation TSM9435CS_D1602.pdf Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
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TSM9435CS RLG TSM9435CS RLG Taiwan Semiconductor Corporation TSM9435CS_D1602.pdf Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
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TSM950N10CW RPG TSM950N10CW RPG Taiwan Semiconductor Corporation TSM950N10_D1807.pdf Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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TSM950N10CW RPG TSM950N10CW RPG Taiwan Semiconductor Corporation TSM950N10_D1807.pdf Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 9154 Stücke:
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100+0.69 EUR
500+0.55 EUR
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TSM9N90ECI C0G TSM9N90ECI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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TSM9N90ECZ C0G TSM9N90ECZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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TSP10H200S S1G TSP10H200S S1G Taiwan Semiconductor Corporation TSP10H200S_D15.pdf Description: DIODE SCHOTTKY 200V 10A TO277A
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TSP10H45S S1G TSP10H45S S1G Taiwan Semiconductor Corporation TSP10H45S%20SERIES_E2103.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
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TSP10H45S S1G TSP10H45S S1G Taiwan Semiconductor Corporation TSP10H45S%20SERIES_E2103.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
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TSP10U100S S1G TSP10U100S S1G Taiwan Semiconductor Corporation TSP10U100S%20SERIES_E15.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
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TSP10U100S S1G TSP10U100S S1G Taiwan Semiconductor Corporation TSP10U100S%20SERIES_E15.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
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TSP10U45S S1G TSP10U45S S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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TSP10U45S S1G TSP10U45S S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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TSP12U120S S1G TSP12U120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
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TSP12U120S S1G TSP12U120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
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TSP15H120S S1G TSP15H120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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TSP15H120S S1G TSP15H120S S1G Taiwan Semiconductor Corporation TSP12U120S_F2103.pdf Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
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TSP15H150S S1G TSP15H150S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_C2103.pdf Description: DIODE SCHOTTKY 150V 15A TO277A
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TSP15H150S S1G TSP15H150S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_C2103.pdf Description: DIODE SCHOTTKY 150V 15A TO277A
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TSP15H200S S1G TSP15H200S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_B15.pdf Description: DIODE SCHOTTKY 200V 15A TO277A
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TSP15H200S S1G TSP15H200S S1G Taiwan Semiconductor Corporation TSP15H120S%20SERIES_B15.pdf Description: DIODE SCHOTTKY 200V 15A TO277A
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TSP15U100S S1G TSP15U100S S1G Taiwan Semiconductor Corporation TSP15U100S_E2103.pdf Description: DIODE SCHOTTKY 100V 15A TO277A
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TSP15U100S S1G TSP15U100S S1G Taiwan Semiconductor Corporation TSP15U100S_E2103.pdf Description: DIODE SCHOTTKY 100V 15A TO277A
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TSP15U50S S1G TSP15U50S S1G Taiwan Semiconductor Corporation TSP15U50S_H2103.pdf Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
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TSP15U50S S1G TSP15U50S S1G Taiwan Semiconductor Corporation TSP15U50S_H2103.pdf Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
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10+2.06 EUR
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TSP20U60S S1G TSP20U60S S1G Taiwan Semiconductor Corporation TSP20U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 20A TO277A
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TSP20U60S S1G TSP20U60S S1G Taiwan Semiconductor Corporation TSP20U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 20A TO277A
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TSPB10U45S S1G TSPB10U45S S1G Taiwan Semiconductor Corporation TSPB10U45S_G15.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.0
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TSPB10U45S S1G TSPB10U45S S1G Taiwan Semiconductor Corporation TSPB10U45S_G15.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.0
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TSS4B03G D2G TSS4B03G D2G Taiwan Semiconductor Corporation TSS4B01G%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 200V 4A TS4B
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TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation TSS54U_C1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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TSS54U RGG TSS54U RGG Taiwan Semiconductor Corporation TSS54U_C1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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TSSA3U45 R3G TSSA3U45 R3G Taiwan Semiconductor Corporation TSSA3U45_N1707.pdf Description: DIODE SCHOTTKY 45V 3A DO214AC
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TSSA3U60 R3G TSSA3U60 R3G Taiwan Semiconductor Corporation TSSA3U60_F1612.pdf Description: DIODE SCHOTTKY 60V 3A DO214AC
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TSSA5U50 E3G TSSA5U50 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 50V 5A DO214AC
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TSSA5U60 E3G TSSA5U60 E3G Taiwan Semiconductor Corporation TSSA5U50%20SERIES_D1512.pdf Description: DIODE SCHOTTKY 60V 5A DO214AC
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TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
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TSSE3H45 RVG TSSE3H45 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 45V 3A SOD123HE
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TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSSE3H60 RVG TSSE3H60 RVG Taiwan Semiconductor Corporation TSSE3H45%20SERIES_B1707.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSSE3U60 RVG TSSE3U60 RVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
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TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
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TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
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TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
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3000+0.19 EUR
9000+0.17 EUR
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TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
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500+0.29 EUR
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TSM8568CS RLG TSM8568CS_B1611.pdf
TSM8568CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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TSM8568CS RLG TSM8568CS_B1611.pdf
TSM8568CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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9+2.16 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
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TSM85N10CZ C0G
TSM85N10CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 81A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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TSM8N50CH C5G TSM8N50_C15.pdf
TSM8N50CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO251
Produkt ist nicht verfügbar
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TSM8N50CP ROG
TSM8N50CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N50CP ROG
TSM8N50CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Produkt ist nicht verfügbar
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TSM8N70CI C0G
TSM8N70CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM8N80CI C0G
TSM8N80CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM8N80CZ C0G
TSM8N80CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CH X0G TSM900N06CH_A2205.pdf
TSM900N06CH X0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 19343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
75+0.64 EUR
150+0.57 EUR
525+0.46 EUR
1050+0.42 EUR
2025+0.38 EUR
5025+0.34 EUR
10050+0.32 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 1368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
31+0.57 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N10CH X0G TSM900N10_A15.pdf
TSM900N10CH X0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Produkt ist nicht verfügbar
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TSM900N10CP ROG TSM900N10_A15.pdf
TSM900N10CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
5000+0.41 EUR
7500+0.4 EUR
12500+0.39 EUR
17500+0.38 EUR
Mindestbestellmenge: 2500
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TSM900N10CP ROG TSM900N10_A15.pdf
TSM900N10CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 22417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.01 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 13
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TSM9435CS RLG TSM9435CS_D1602.pdf
TSM9435CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM9435CS RLG TSM9435CS_D1602.pdf
TSM9435CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 5.3A 8SOP
auf Bestellung 2562 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM950N10CW RPG TSM950N10_D1807.pdf
TSM950N10CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TSM950N10CW RPG TSM950N10_D1807.pdf
TSM950N10CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 9154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
19+0.95 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.46 EUR
Mindestbestellmenge: 14
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TSM9N90ECI C0G
TSM9N90ECI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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TSM9N90ECZ C0G
TSM9N90ECZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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TSP10H200S S1G TSP10H200S_D15.pdf
TSP10H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP10H45S S1G TSP10H45S%20SERIES_E2103.pdf
TSP10H45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP10H45S S1G TSP10H45S%20SERIES_E2103.pdf
TSP10H45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP10U100S S1G TSP10U100S%20SERIES_E15.pdf
TSP10U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP10U100S S1G TSP10U100S%20SERIES_E15.pdf
TSP10U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO277A
auf Bestellung 37890 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP10U45S S1G
TSP10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSP10U45S S1G
TSP10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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TSP12U120S S1G TSP12U120S_F2103.pdf
TSP12U120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP12U120S S1G TSP12U120S_F2103.pdf
TSP12U120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 12A TO277A
auf Bestellung 7370 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP15H120S S1G TSP12U120S_F2103.pdf
TSP15H120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
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TSP15H120S S1G TSP12U120S_F2103.pdf
TSP15H120S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Produkt ist nicht verfügbar
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TSP15H150S S1G TSP15H120S%20SERIES_C2103.pdf
TSP15H150S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP15H150S S1G TSP15H120S%20SERIES_C2103.pdf
TSP15H150S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 15A TO277A
auf Bestellung 5732 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP15H200S S1G TSP15H120S%20SERIES_B15.pdf
TSP15H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TSP15H200S S1G TSP15H120S%20SERIES_B15.pdf
TSP15H200S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO277A
auf Bestellung 7105 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP15U100S S1G TSP15U100S_E2103.pdf
TSP15U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO277A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSP15U100S S1G TSP15U100S_E2103.pdf
TSP15U100S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 15A TO277A
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
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TSP15U50S S1G TSP15U50S_H2103.pdf
TSP15U50S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.98 EUR
3000+0.91 EUR
Mindestbestellmenge: 1500
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TSP15U50S S1G TSP15U50S_H2103.pdf
TSP15U50S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
auf Bestellung 3368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.06 EUR
100+1.64 EUR
500+1.39 EUR
Mindestbestellmenge: 8
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TSP20U60S S1G TSP20U60S_F2103.pdf
TSP20U60S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 34500 Stücke:
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TSP20U60S S1G TSP20U60S_F2103.pdf
TSP20U60S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO277A
auf Bestellung 37426 Stücke:
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TSPB10U45S S1G TSPB10U45S_G15.pdf
TSPB10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
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TSPB10U45S S1G TSPB10U45S_G15.pdf
TSPB10U45S S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.0
Produkt ist nicht verfügbar
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TSS4B03G D2G TSS4B01G%20SERIES_E15.pdf
TSS4B03G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A TS4B
Produkt ist nicht verfügbar
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TSS54U RGG TSS54U_C1601.pdf
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.07 EUR
Mindestbestellmenge: 4000
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TSS54U RGG TSS54U_C1601.pdf
TSS54U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 23427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
106+0.17 EUR
140+0.13 EUR
500+0.11 EUR
Mindestbestellmenge: 63
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TSSA3U45 R3G TSSA3U45_N1707.pdf
TSSA3U45 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A DO214AC
auf Bestellung 21638 Stücke:
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TSSA3U60 R3G TSSA3U60_F1612.pdf
TSSA3U60 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AC
auf Bestellung 6496 Stücke:
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TSSA5U50 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U50 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AC
auf Bestellung 4662 Stücke:
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TSSA5U60 E3G TSSA5U50%20SERIES_D1512.pdf
TSSA5U60 E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AC
auf Bestellung 2414 Stücke:
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TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 3000 Stücke:
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TSSE3H45 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H45 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 3A SOD123HE
auf Bestellung 1054 Stücke:
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TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 297000 Stücke:
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TSSE3H60 RVG TSSE3H45%20SERIES_B1707.pdf
TSSE3H60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
auf Bestellung 299431 Stücke:
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TSSE3U60 RVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60 RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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