Die Produkte taiwan semiconductor corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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GBPC2508 T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 25A GBPC Packaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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GBPC2508M T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 25A GBPC-M Packaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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GBPC2508W T0G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 25A GBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Tray Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CA A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1V 103V DO201 Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 15A Voltage - Clamping (Max) @ Ipp: 103V Voltage - Breakdown (Min): 71.3V Voltage - Reverse Standoff (Typ): 64.1V Bidirectional Channels: 1 Type: Zener Part Status: Active Supplier Device Package: DO-201 Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CA B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15A Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CAHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1V 103V DO201 Packaging: Tape & Box (TB) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64.1V Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 15A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CAHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1V 103V DO201 Packaging: Bulk Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64.1V Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 15A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CA R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1V 103V DO201 Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 15A Voltage - Clamping (Max) @ Ipp: 103V Voltage - Breakdown (Min): 71.3V Voltage - Reverse Standoff (Typ): 64.1V Bidirectional Channels: 1 Type: Zener Supplier Device Package: DO-201 Part Status: Active Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE75CAHR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO201 Packaging: Tape & Reel (TR) Supplier Device Package: DO-201 Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 15A Voltage - Clamping (Max) @ Ipp: 103V Voltage - Breakdown (Min): 71.3V Voltage - Reverse Standoff (Typ): 64.1V Bidirectional Channels: 1 Type: Zener Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| TSM480P06CZ C0G |
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Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 66W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
.JPG "TSM680P06DPQ56 RLG") |
TSM680P06DPQ56 RLG |
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Taiwan Semiconductor Corporation |
Description: MOSFET 2 P-CH 60V 12A 8PDFN Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.5W Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 6027 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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ABS8 REG |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 1A ABS Supplier Device Package: ABS Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA Current - Average Rectified (Io): 1A Voltage - Peak Reverse (Max): 800V Technology: Standard Diode Type: Single Phase Current - Reverse Leakage @ Vr: 10µA @ 800V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 3286 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6732 Stücke - Preis und Lieferfrist anzeigen
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SR802 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 8A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 8A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MCR100-6 A1G |
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Taiwan Semiconductor Corporation |
Description: SCR 400V 800MA TO92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 800 mA Packaging: Tape & Box (TB) Part Status: Obsolete Supplier Device Package: TO-92 Current - Off State (Max): 10 µA Voltage - On State (Vtm) (Max): 1.7 V Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - Gate Trigger (Igt) (Max): 200 µA Current - Hold (Ih) (Max): 5 mA Operating Temperature: -40°C ~ 125°C (TJ) SCR Type: Sensitive Gate Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5817HR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A DO204AL Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-204AL (DO-41) Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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S3M V7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AB Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 1000V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: S3M |
auf Bestellung 1655 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
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1N4751A R1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751A A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751A B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Tolerance: ±5% Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751AHR1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Part Status: Active Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751AHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751AHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Tolerance: ±5% Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751A R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4751AHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W DO204AL Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V Power - Max: 1 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SS16LHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 400µA @ 60V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZX79C10 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 500MW DO35 Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 200nA @ 7V Impedance (Max) (Zzt): 20 Ohms Power - Max: 500mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 10V Part Status: Active Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18A A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Type: Zener Mounting Type: Through Hole Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Package / Case: DO-201AA, DO-27, Axial Voltage - Clamping (Max) @ Ipp: 25.5V Voltage - Breakdown (Min): 17.1V Packaging: Tape & Box (TB) Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 25.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18AHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 25.5V Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18AHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 25.5V Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18A R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 25.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE18AHR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5VC DO201 Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 25.5V Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 60A Applications: Automotive |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZV55C12 L1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW MINI MELF Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: Mini MELF Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZV55C12 L0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW MINI MELF Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) Tolerance: ±5% Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: Mini MELF Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36A A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Voltage - Breakdown (Min): 34.2V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 31A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 49.9V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36A B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk Part Status: Active Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36AHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 49.9V Voltage - Breakdown (Min): 34.2V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 31A Applications: Automotive |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36AHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Voltage - Clamping (Max) @ Ipp: 49.9V Voltage - Breakdown (Min): 34.2V Unidirectional Channels: 1 Supplier Device Package: DO-201 Part Status: Active Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 31A Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Applications: Automotive Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36A R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 49.9V Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 31A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1.5KE36AHR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8VWM 49.9VC DO201 Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 49.9V Voltage - Breakdown (Min): 34.2V Unidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 31A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZW04-154B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 154VWM 246VC DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 1.6A Voltage - Clamping (Max) @ Ipp: 246V Voltage - Breakdown (Min): 171V Voltage - Reverse Standoff (Typ): 154V Bidirectional Channels: 1 Type: Zener Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748A R1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Power - Max: 1 W Part Status: Discontinued at Digi-Key Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748A A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Power - Max: 1 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748A B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Packaging: Bulk Power - Max: 1 W Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748AHR1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Part Status: Discontinued at Digi-Key Power - Max: 1 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748AHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-204AL (DO-41) Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Package / Case: DO-204AL, DO-41, Axial Part Status: Active Power - Max: 1 W Tolerance: ±5% Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748AHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Power - Max: 1 W Part Status: Discontinued at Digi-Key Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748A R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Power - Max: 1 W Impedance (Max) (Zzt): 23 Ohms Part Status: Active Supplier Device Package: DO-204AL (DO-41) Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N4748AHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Package / Case: DO-201AD, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401GHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401GHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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1N5401GHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Current - Reverse Leakage @ Vr: 5 µA @ 100 V Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR103G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Manufacturer: Taiwan Semiconductor Corporation Packaging: Tape & Box (TB) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: FR103 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Manufacturer: Taiwan Semiconductor Corporation Packaging: Cut Tape (CT) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: FR103 |
auf Bestellung 1730 Stücke Lieferzeit 21-28 Tag (e) |
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FR103G R1G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Manufacturer: Taiwan Semiconductor Corporation Base Part Number: FR103 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR103G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Manufacturer: Taiwan Semiconductor Corporation Base Part Number: FR103 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR103G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: FR103 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e) |
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ES1JLW RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123W Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18584 Stücke - Preis und Lieferfrist anzeigen
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ES1J R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5859 Stücke - Preis und Lieferfrist anzeigen
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ES1JLWHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123W Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1900 Stücke - Preis und Lieferfrist anzeigen
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ES1JL RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 8pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4666 Stücke - Preis und Lieferfrist anzeigen
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz |
auf Bestellung 2275 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4666 Stücke - Preis und Lieferfrist anzeigen
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ES1JL R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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| ES1JF R2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SMAF Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMAF Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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ES1JL RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL MHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL MQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL MTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL RTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JL RUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1J M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 18pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JLHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JLHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JLHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JLHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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ES1JLHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBR1035HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 35V 10A TO220AC Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 35V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
MMSZ5248B RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW SOD123F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 100nA @ 14V Power - Max: 500mW Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOD-123F Package / Case: SOD-123F |
auf Bestellung 644 Stücke Lieferzeit 21-28 Tag (e) |
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1N4148 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 150MA DO35 Diode Type: Standard Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-35 Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed |
auf Bestellung 40000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 802 Stücke - Preis und Lieferfrist anzeigen
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 150MA DO35 Package / Case: DO-204AH, DO-35, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-35 Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Diode Type: Standard |
auf Bestellung 2748 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 802 Stücke - Preis und Lieferfrist anzeigen
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,SC-76,SOD-323.jpg "1N4148W-G RHG") |
1N4148W-G RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 150MA SOD123 Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed |
auf Bestellung 93000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 27306 Stücke - Preis und Lieferfrist anzeigen
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 150MA SOD123 Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123 Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard |
auf Bestellung 96902 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 27306 Stücke - Preis und Lieferfrist anzeigen
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BZV55C18 L1G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW MINI MELF Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: Mini MELF Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZV55C18 L0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW MINI MELF Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V Current - Reverse Leakage @ Vr: 100 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: Mini MELF Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155G A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155G B0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155GHA0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155GHB0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155GHR0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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FR155G R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
MBR745 C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 7.5A TO220AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Current - Reverse Leakage @ Vr: 100 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBR745HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 7.5A TO220AC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| GBPC2508 T0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| GBPC2508M T0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| GBPC2508W T0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Tray
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Tray
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
| 1.5KE75CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1V 103V DO201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-201
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1V 103V DO201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Supplier Device Package: DO-201
Packaging: Tape & Box (TB)
| 1.5KE75CA B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1VWM 103VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
| 1.5KE75CAHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1V 103V DO201
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64.1V
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 15A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1V 103V DO201
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64.1V
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 15A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
| 1.5KE75CAHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1V 103V DO201
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64.1V
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 15A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1V 103V DO201
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64.1V
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 15A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
| 1.5KE75CA R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1V 103V DO201
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Supplier Device Package: DO-201
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1V 103V DO201
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Supplier Device Package: DO-201
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
| 1.5KE75CAHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO201
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64.1VWM 103VC DO201
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
| TSM480P06CZ C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
| TSM680P06DPQ56 RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 P-CH 60V 12A 8PDFN
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6027 Stücke Description: MOSFET 2 P-CH 60V 12A 8PDFN
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| ABS8 REG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A ABS
Supplier Device Package: ABS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
Current - Average Rectified (Io): 1A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10µA @ 800V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3286 Stücke Description: BRIDGE RECT 1PHASE 800V 1A ABS
Supplier Device Package: ABS
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
Current - Average Rectified (Io): 1A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10µA @ 800V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6732 Stücke - Preis und Lieferfrist anzeigen
| SR802 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
| MCR100-6 A1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SCR 400V 800MA TO92
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 800 mA
Packaging: Tape & Box (TB)
Part Status: Obsolete
Supplier Device Package: TO-92
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SCR 400V 800MA TO92
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 800 mA
Packaging: Tape & Box (TB)
Part Status: Obsolete
Supplier Device Package: TO-92
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
| 1N5817HR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
| S3M V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S3M
auf Bestellung 1655 Stücke Description: DIODE GEN PURP 1KV 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S3M
Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
| 1N4751A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
| 1N4751A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
| 1N4751A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
| 1N4751AHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
| 1N4751AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
| 1N4751AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Tolerance: ±5%
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Tolerance: ±5%
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Packaging: Bulk
| 1N4751A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Tolerance: ±5%
Packaging: Tape & Reel (TR)
| 1N4751AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W DO204AL
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 30V 1W DO204AL
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
| SS16LHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
| BZX79C10 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 200nA @ 7V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 10V
Part Status: Active
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 500MW DO35
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 200nA @ 7V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 10V
Part Status: Active
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
| 1.5KE18A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Type: Zener
Mounting Type: Through Hole
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Package / Case: DO-201AA, DO-27, Axial
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Packaging: Tape & Box (TB)
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Type: Zener
Mounting Type: Through Hole
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Package / Case: DO-201AA, DO-27, Axial
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Packaging: Tape & Box (TB)
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
| 1.5KE18A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
| 1.5KE18AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
| 1.5KE18AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
| 1.5KE18A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
| 1.5KE18AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.3VWM 25.5VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 60A
Applications: Automotive
| BZV55C12 L1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW MINI MELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 500MW MINI MELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| BZV55C12 L0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW MINI MELF
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 500MW MINI MELF
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C (TJ)
| 1.5KE36A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
| 1.5KE36A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Active
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
| 1.5KE36AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Automotive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Automotive
| 1.5KE36AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Part Status: Active
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Applications: Automotive
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Part Status: Active
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Applications: Automotive
Packaging: Bulk
| 1.5KE36A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
| 1.5KE36AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8VWM 49.9VC DO201
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
| BZW04-154B R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Voltage - Reverse Standoff (Typ): 154V
Bidirectional Channels: 1
Type: Zener
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 154VWM 246VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Voltage - Reverse Standoff (Typ): 154V
Bidirectional Channels: 1
Type: Zener
Packaging: Tape & Reel (TR)
Part Status: Active
| 1N4748A R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
| 1N4748A A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Active
| 1N4748A B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Packaging: Bulk
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Packaging: Bulk
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
| 1N4748AHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Discontinued at Digi-Key
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Discontinued at Digi-Key
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
| 1N4748AHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Package / Case: DO-204AL, DO-41, Axial
Part Status: Active
Power - Max: 1 W
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Package / Case: DO-204AL, DO-41, Axial
Part Status: Active
Power - Max: 1 W
Tolerance: ±5%
Packaging: Tape & Box (TB)
| 1N4748AHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
| 1N4748A R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Impedance (Max) (Zzt): 23 Ohms
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Power - Max: 1 W
Impedance (Max) (Zzt): 23 Ohms
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
| 1N4748AHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 22V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
| 1N5401G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Package / Case: DO-201AD, Axial
Packaging: Bulk
| 1N5401GHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Bulk
| 1N5401G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
| 1N5401GHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Part Status: Discontinued at Digi-Key
| 1N5401G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
| 1N5401GHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
| FR103G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: FR103
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: FR103
auf Bestellung 1730 Stücke - Preis und Lieferfrist anzeigen
| FR103G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: FR103
auf Bestellung 1730 Stücke Description: DIODE GEN PURP 200V 1A DO204AL
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: FR103
Lieferzeit 21-28 Tag (e)
| FR103G R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
| FR103G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
| FR103G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
auf Bestellung 10000 Stücke Description: DIODE GEN PURP 200V 1A DO204AL
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: FR103
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Lieferzeit 21-28 Tag (e)
| ES1JLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
auf Bestellung 18584 Stücke - Preis und Lieferfrist anzeigen
| ES1J R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 5859 Stücke - Preis und Lieferfrist anzeigen
| ES1JLWHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
auf Bestellung 1900 Stücke - Preis und Lieferfrist anzeigen
| ES1JL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
auf Bestellung 6941 Stücke - Preis und Lieferfrist anzeigen
| ES1JL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
auf Bestellung 2275 Stücke Description: DIODE GEN PURP 600V 1A SUB SMA
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Lieferzeit 21-28 Tag (e)
auf Bestellung 4666 Stücke - Preis und Lieferfrist anzeigen
|
| ES1JL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| ES1JF R2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SMAF
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SMAF
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 1A
| ES1JL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
| ES1JL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
| ES1JL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
| ES1JL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| ES1JL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| ES1JL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
| ES1JL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
| ES1J M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| ES1JLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| ES1JLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
| ES1JLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| ES1JLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| ES1JLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
| MBR1035HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
| MMSZ5248B RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW SOD123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 100nA @ 14V
Power - Max: 500mW
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±5%
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
auf Bestellung 644 Stücke Description: DIODE ZENER 18V 500MW SOD123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 100nA @ 14V
Power - Max: 500mW
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±5%
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOD-123F
Package / Case: SOD-123F
Lieferzeit 21-28 Tag (e)
| 1N4148 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 150MA DO35
Diode Type: Standard
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 40000 Stücke Description: DIODE GEN PURP 100V 150MA DO35
Diode Type: Standard
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Lieferzeit 21-28 Tag (e)
auf Bestellung 3550 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4148 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 150MA DO35
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Diode Type: Standard
auf Bestellung 2748 Stücke Description: DIODE GEN PURP 100V 150MA DO35
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 40802 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4148W-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 150MA SOD123
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 93000 Stücke Description: DIODE GEN PURP 100V 150MA SOD123
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Lieferzeit 21-28 Tag (e)
auf Bestellung 124208 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4148W-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 150MA SOD123
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 96902 Stücke Description: DIODE GEN PURP 100V 150MA SOD123
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 120306 Stücke - Preis und Lieferfrist anzeigen
|
| BZV55C18 L1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW MINI MELF
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
| BZV55C18 L0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW MINI MELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
| FR155G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| FR155G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Packaging: Bulk
| FR155GHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
| FR155GHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
| FR155GHR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| FR155G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.5A DO204AC
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
| MBR745 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 7.5A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Packaging: Tube
| MBR745HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 50V 7.5A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
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