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TSF20H150C C0G TSF20H150C C0G Taiwan Semiconductor Corporation TSF20H100C%20SERIES_I14.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 981 Stücke:
Lieferzeit 21-28 Tag (e)
TSF20H200C C0G TSF20H200C C0G Taiwan Semiconductor Corporation TSF20H100C%20SERIES_I14.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 962 Stücke:
Lieferzeit 21-28 Tag (e)
TSF20L200C C0G TSF20L200C C0G Taiwan Semiconductor Corporation TSF20L100C-TSF20L200C_C2105.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
Produkt ist nicht verfügbar
TSF20L60C C0G TSF20L60C C0G Taiwan Semiconductor Corporation TSF20L45C-TSF20L60C_C2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
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TSF30H150C C0G TSF30H150C C0G Taiwan Semiconductor Corporation TSF30H100C%20SERIES%20_G14.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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TSF30H200C C0G TSF30H200C C0G Taiwan Semiconductor Corporation TSF30H100C%20SERIES%20_G14.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 2286 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30H60C C0G TSF30H60C C0G Taiwan Semiconductor Corporation TSF30H45C%20SERIES_C14.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30L120C C0G TSF30L120C C0G Taiwan Semiconductor Corporation TSF30L100C%20SERIES_B14.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L150C C0G TSF30L150C C0G Taiwan Semiconductor Corporation TSF30L100C%20SERIES_B14.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 581 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L200C C0G TSF30L200C C0G Taiwan Semiconductor Corporation TSF30L100C-TSF30L200C_C2105.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.28 EUR
10+ 4.75 EUR
100+ 3.82 EUR
500+ 3.14 EUR
Mindestbestellmenge: 5
TSF30L60C C0G TSF30L60C C0G Taiwan Semiconductor Corporation TSF30L45C%20SERIES_E14.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30U100C C0G TSF30U100C C0G Taiwan Semiconductor Corporation TSF30U100C%20SERIES_D14.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Produkt ist nicht verfügbar
TSF30U120C C0G TSF30U120C C0G Taiwan Semiconductor Corporation TSF30U100C%20SERIES_D14.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
Produkt ist nicht verfügbar
TSF30U45C C0G TSF30U45C C0G Taiwan Semiconductor Corporation TSF30U45C_F14.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
auf Bestellung 965 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30U60C C0G TSF30U60C C0G Taiwan Semiconductor Corporation TSF30U60C_G2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF40H120C C0G TSF40H120C C0G Taiwan Semiconductor Corporation TSF40H100C-TSF40H200C_C2105.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 980 Stücke:
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TSF40H150C C0G TSF40H150C C0G Taiwan Semiconductor Corporation TSF40H100C%20SERIES_B14.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 962 Stücke:
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TSF40L100C C0G TSF40L100C C0G Taiwan Semiconductor Corporation TSF40L100C%20SERIES_B14.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1473 Stücke:
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TSF40L200C C0G TSF40L200C C0G Taiwan Semiconductor Corporation TSF40H100C-TSF40H200C_C2105.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 12 Stücke:
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5+6.08 EUR
10+ 5.47 EUR
Mindestbestellmenge: 5
TSH248CX RFG TSH248CX RFG Taiwan Semiconductor Corporation Description: MAGNETIC SWITCH TSOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.74 EUR
6000+ 0.68 EUR
9000+ 0.64 EUR
Mindestbestellmenge: 3000
TSH248CX RFG TSH248CX RFG Taiwan Semiconductor Corporation Description: MAGNETIC SWITCH TSOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.87 EUR
19+ 1.43 EUR
25+ 1.23 EUR
50+ 1.19 EUR
100+ 1.01 EUR
500+ 0.88 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 14
TSI10H100CW C0G TSI10H100CW C0G Taiwan Semiconductor Corporation TSI10H100CW%20SERIES_A15.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI10H120CW C0G TSI10H120CW C0G Taiwan Semiconductor Corporation TSI10H100CW%20SERIES_A15.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
TSI10H150CW C0G TSI10H150CW C0G Taiwan Semiconductor Corporation TSI10H100CW%20SERIES_A15.pdf Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Produkt ist nicht verfügbar
TSI10H200CW C0G TSI10H200CW C0G Taiwan Semiconductor Corporation TSI10H100CW%20SERIES_A15.pdf Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Produkt ist nicht verfügbar
TSI10L200CW C0G TSI10L200CW C0G Taiwan Semiconductor Corporation TSI10L200CW_B2104.pdf Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 3980 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
10+ 4.04 EUR
100+ 3.25 EUR
500+ 2.67 EUR
1000+ 2.21 EUR
2000+ 2.06 EUR
Mindestbestellmenge: 6
TSI20H100CW C0G TSI20H100CW C0G Taiwan Semiconductor Corporation TSI20H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 985 Stücke:
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TSI20H120CW C0G TSI20H120CW C0G Taiwan Semiconductor Corporation TSI20H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
TSI20H150CW C0G TSI20H150CW C0G Taiwan Semiconductor Corporation TSI20H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 993 Stücke:
Lieferzeit 21-28 Tag (e)
TSI20H200CW C0G TSI20H200CW C0G Taiwan Semiconductor Corporation TSI20H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)
TSI30H100CW C0G TSI30H100CW C0G Taiwan Semiconductor Corporation TSI30H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI30H120CW C0G TSI30H120CW C0G Taiwan Semiconductor Corporation TSI30H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Produkt ist nicht verfügbar
TSI30H150CW C0G TSI30H150CW C0G Taiwan Semiconductor Corporation TSI30H100CW-TSI30H200CW_E2104.pdf Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 940 Stücke:
Lieferzeit 21-28 Tag (e)
TSI30H200CW C0G TSI30H200CW C0G Taiwan Semiconductor Corporation TSI30H100CW%20SERIES_D15.pdf Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
TSM015NA03CR RLG TSM015NA03CR RLG Taiwan Semiconductor Corporation TSM015NA03CR_A1612.pdf Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM015NA03CR RLG TSM015NA03CR RLG Taiwan Semiconductor Corporation TSM015NA03CR_A1612.pdf Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 4988 Stücke:
Lieferzeit 21-28 Tag (e)
TSM018NA03CR RLG TSM018NA03CR RLG Taiwan Semiconductor Corporation TSM018NA03CR_A1611.pdf Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM018NA03CR RLG TSM018NA03CR RLG Taiwan Semiconductor Corporation TSM018NA03CR_A1611.pdf Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 4815 Stücke:
Lieferzeit 21-28 Tag (e)
TSM020N04LCR RLG TSM020N04LCR RLG Taiwan Semiconductor Corporation TSM020N04LCR_A1608.pdf Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Produkt ist nicht verfügbar
TSM020N04LCR RLG TSM020N04LCR RLG Taiwan Semiconductor Corporation TSM020N04LCR_A1608.pdf Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
TSM024NA04LCR RLG TSM024NA04LCR RLG Taiwan Semiconductor Corporation TSM024NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Produkt ist nicht verfügbar
TSM024NA04LCR RLG TSM024NA04LCR RLG Taiwan Semiconductor Corporation TSM024NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
Mindestbestellmenge: 8
TSM026NA03CR RLG TSM026NA03CR RLG Taiwan Semiconductor Corporation TSM026NA03CR_B1610.pdf Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM026NA03CR RLG TSM026NA03CR RLG Taiwan Semiconductor Corporation TSM026NA03CR_B1610.pdf Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 4850 Stücke:
Lieferzeit 21-28 Tag (e)
TSM033NA03CR RLG TSM033NA03CR RLG Taiwan Semiconductor Corporation TSM033NA03CR_B1610.pdf Description: MOSFET N-CH 30V 129A 8PDFN
Produkt ist nicht verfügbar
TSM033NA03CR RLG TSM033NA03CR RLG Taiwan Semiconductor Corporation TSM033NA03CR_B1610.pdf Description: MOSFET N-CH 30V 129A 8PDFN
auf Bestellung 2340 Stücke:
Lieferzeit 21-28 Tag (e)
TSM033NA04LCR RLG TSM033NA04LCR RLG Taiwan Semiconductor Corporation TSM033NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Produkt ist nicht verfügbar
TSM033NA04LCR RLG TSM033NA04LCR RLG Taiwan Semiconductor Corporation TSM033NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.16 EUR
Mindestbestellmenge: 7
TSM036N03PQ56 RLG TSM036N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Produkt ist nicht verfügbar
TSM036N03PQ56 RLG TSM036N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
auf Bestellung 398 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
16+ 1.66 EUR
100+ 1.29 EUR
Mindestbestellmenge: 13
TSM040N03CP ROG TSM040N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.2 EUR
5000+ 1.15 EUR
Mindestbestellmenge: 2500
TSM040N03CP ROG TSM040N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
11+ 2.38 EUR
100+ 1.85 EUR
500+ 1.57 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 9
TSM042N03CS RLG TSM042N03CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM042N03CS Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.79 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2500
TSM042N03CS RLG TSM042N03CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM042N03CS Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 14282 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.8 EUR
100+ 1.24 EUR
500+ 1.04 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
TSM045NA03CR RLG TSM045NA03CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Produkt ist nicht verfügbar
TSM045NA03CR RLG TSM045NA03CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.95 EUR
16+ 1.68 EUR
100+ 1.16 EUR
Mindestbestellmenge: 14
TSM052N06PQ56 RLG TSM052N06PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM052N06PQ56 RLG TSM052N06PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 115 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.79 EUR
17+ 1.55 EUR
100+ 1.07 EUR
Mindestbestellmenge: 15
TSF20H150C C0G TSF20H100C%20SERIES_I14.pdf
TSF20H150C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 981 Stücke:
Lieferzeit 21-28 Tag (e)
TSF20H200C C0G TSF20H100C%20SERIES_I14.pdf
TSF20H200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 962 Stücke:
Lieferzeit 21-28 Tag (e)
TSF20L200C C0G TSF20L100C-TSF20L200C_C2105.pdf
TSF20L200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Produkt ist nicht verfügbar
TSF20L60C C0G TSF20L45C-TSF20L60C_C2105.pdf
TSF20L60C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30H150C C0G TSF30H100C%20SERIES%20_G14.pdf
TSF30H150C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
TSF30H200C C0G TSF30H100C%20SERIES%20_G14.pdf
TSF30H200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 2286 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30H60C C0G TSF30H45C%20SERIES_C14.pdf
TSF30H60C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30L120C C0G TSF30L100C%20SERIES_B14.pdf
TSF30L120C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L150C C0G TSF30L100C%20SERIES_B14.pdf
TSF30L150C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 581 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L200C C0G TSF30L100C-TSF30L200C_C2105.pdf
TSF30L200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.28 EUR
10+ 4.75 EUR
100+ 3.82 EUR
500+ 3.14 EUR
Mindestbestellmenge: 5
TSF30L60C C0G TSF30L45C%20SERIES_E14.pdf
TSF30L60C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30U100C C0G TSF30U100C%20SERIES_D14.pdf
TSF30U100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Produkt ist nicht verfügbar
TSF30U120C C0G TSF30U100C%20SERIES_D14.pdf
TSF30U120C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Produkt ist nicht verfügbar
TSF30U45C C0G TSF30U45C_F14.pdf
TSF30U45C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
auf Bestellung 965 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30U60C C0G TSF30U60C_G2105.pdf
TSF30U60C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF40H120C C0G TSF40H100C-TSF40H200C_C2105.pdf
TSF40H120C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
TSF40H150C C0G TSF40H100C%20SERIES_B14.pdf
TSF40H150C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 962 Stücke:
Lieferzeit 21-28 Tag (e)
TSF40L100C C0G TSF40L100C%20SERIES_B14.pdf
TSF40L100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1473 Stücke:
Lieferzeit 21-28 Tag (e)
TSF40L200C C0G TSF40H100C-TSF40H200C_C2105.pdf
TSF40L200C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.08 EUR
10+ 5.47 EUR
Mindestbestellmenge: 5
TSH248CX RFG
TSH248CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.74 EUR
6000+ 0.68 EUR
9000+ 0.64 EUR
Mindestbestellmenge: 3000
TSH248CX RFG
TSH248CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.87 EUR
19+ 1.43 EUR
25+ 1.23 EUR
50+ 1.19 EUR
100+ 1.01 EUR
500+ 0.88 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 14
TSI10H100CW C0G TSI10H100CW%20SERIES_A15.pdf
TSI10H100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI10H120CW C0G TSI10H100CW%20SERIES_A15.pdf
TSI10H120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
TSI10H150CW C0G TSI10H100CW%20SERIES_A15.pdf
TSI10H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Produkt ist nicht verfügbar
TSI10H200CW C0G TSI10H100CW%20SERIES_A15.pdf
TSI10H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Produkt ist nicht verfügbar
TSI10L200CW C0G TSI10L200CW_B2104.pdf
TSI10L200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 3980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 4.04 EUR
100+ 3.25 EUR
500+ 2.67 EUR
1000+ 2.21 EUR
2000+ 2.06 EUR
Mindestbestellmenge: 6
TSI20H100CW C0G TSI20H100CW%20SERIES_D15.pdf
TSI20H100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
TSI20H120CW C0G TSI20H100CW%20SERIES_D15.pdf
TSI20H120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
TSI20H150CW C0G TSI20H100CW%20SERIES_D15.pdf
TSI20H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 993 Stücke:
Lieferzeit 21-28 Tag (e)
TSI20H200CW C0G TSI20H100CW%20SERIES_D15.pdf
TSI20H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)
TSI30H100CW C0G TSI30H100CW%20SERIES_D15.pdf
TSI30H100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI30H120CW C0G TSI30H100CW%20SERIES_D15.pdf
TSI30H120CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Produkt ist nicht verfügbar
TSI30H150CW C0G TSI30H100CW-TSI30H200CW_E2104.pdf
TSI30H150CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 940 Stücke:
Lieferzeit 21-28 Tag (e)
TSI30H200CW C0G TSI30H100CW%20SERIES_D15.pdf
TSI30H200CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
TSM015NA03CR RLG TSM015NA03CR_A1612.pdf
TSM015NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM015NA03CR RLG TSM015NA03CR_A1612.pdf
TSM015NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 4988 Stücke:
Lieferzeit 21-28 Tag (e)
TSM018NA03CR RLG TSM018NA03CR_A1611.pdf
TSM018NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM018NA03CR RLG TSM018NA03CR_A1611.pdf
TSM018NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 4815 Stücke:
Lieferzeit 21-28 Tag (e)
TSM020N04LCR RLG TSM020N04LCR_A1608.pdf
TSM020N04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Produkt ist nicht verfügbar
TSM020N04LCR RLG TSM020N04LCR_A1608.pdf
TSM020N04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
TSM024NA04LCR RLG TSM024NA04LCR_B1611.pdf
TSM024NA04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Produkt ist nicht verfügbar
TSM024NA04LCR RLG TSM024NA04LCR_B1611.pdf
TSM024NA04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.69 EUR
10+ 3.02 EUR
Mindestbestellmenge: 8
TSM026NA03CR RLG TSM026NA03CR_B1610.pdf
TSM026NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
TSM026NA03CR RLG TSM026NA03CR_B1610.pdf
TSM026NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 4850 Stücke:
Lieferzeit 21-28 Tag (e)
TSM033NA03CR RLG TSM033NA03CR_B1610.pdf
TSM033NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 129A 8PDFN
Produkt ist nicht verfügbar
TSM033NA03CR RLG TSM033NA03CR_B1610.pdf
TSM033NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 129A 8PDFN
auf Bestellung 2340 Stücke:
Lieferzeit 21-28 Tag (e)
TSM033NA04LCR RLG TSM033NA04LCR_B1611.pdf
TSM033NA04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Produkt ist nicht verfügbar
TSM033NA04LCR RLG TSM033NA04LCR_B1611.pdf
TSM033NA04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.16 EUR
Mindestbestellmenge: 7
TSM036N03PQ56 RLG
TSM036N03PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Produkt ist nicht verfügbar
TSM036N03PQ56 RLG
TSM036N03PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
auf Bestellung 398 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.66 EUR
100+ 1.29 EUR
Mindestbestellmenge: 13
TSM040N03CP ROG
TSM040N03CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.2 EUR
5000+ 1.15 EUR
Mindestbestellmenge: 2500
TSM040N03CP ROG
TSM040N03CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.91 EUR
11+ 2.38 EUR
100+ 1.85 EUR
500+ 1.57 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 9
TSM042N03CS RLG pdf.php?pn=TSM042N03CS
TSM042N03CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.79 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2500
TSM042N03CS RLG pdf.php?pn=TSM042N03CS
TSM042N03CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 14282 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.8 EUR
100+ 1.24 EUR
500+ 1.04 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
TSM045NA03CR RLG
TSM045NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Produkt ist nicht verfügbar
TSM045NA03CR RLG
TSM045NA03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.95 EUR
16+ 1.68 EUR
100+ 1.16 EUR
Mindestbestellmenge: 14
TSM052N06PQ56 RLG
TSM052N06PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM052N06PQ56 RLG
TSM052N06PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG
TSM055N03EPQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG
TSM055N03EPQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 115 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
17+ 1.55 EUR
100+ 1.07 EUR
Mindestbestellmenge: 15
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