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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZD27C130P R3G BZD27C130P R3G BZD27C%20SERIES_AA1806.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 132.5V 1W SUB SMA
Tolerance: ±6.41%
Voltage - Zener (Nom) (Vz): 132.5V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 100V
Impedance (Max) (Zzt): 300 Ohms
Power - Max: 1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD17C200P R3G BZD17C200P R3G BZD17C%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 200V 800MW SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 200V
Tolerance: ±6%
Power - Max: 800mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 150V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD17C220P R3G BZD17C220P R3G BZD17C%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 220V 800MW SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 220V
Tolerance: ±5.68%
Power - Max: 800mW
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 160V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C10P R3G BZD27C10P R3G BZD27C6V8P_BZD27C220P_Jun2017.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 10V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±6%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 7µA @ 7.5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949 R5G 1SMB5949 R5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 100V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949HR5G 1SMB5949HR5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 100V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949HM4G 1SMB5949HM4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 100V 3W DO214AA
Impedance (Max) (Zzt): 250 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949 M4G 1SMB5949 M4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 100V 3W DO214AA
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 76V
Impedance (Max) (Zzt): 250 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15H45 R0G SK15H45_E13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 15A R-6
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Package / Case: R6, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15H45 A0G SK15H45_E13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 15A R-6
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Package / Case: R6, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15BHR5G SK15BHR5G SK12B%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15B R5G SK15B R5G SK12B%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO214AA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15B M4G SK15B M4G SK12B%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO214AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15BHM4G SK15BHM4G SK12B%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 1A DO214AA
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5238B A0G 1N5238B A0G 1N5221B%20SERIES_G1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 8.7V 500MW DO35
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 8.7V
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939HR5G 1SMB5939HR5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 39V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939 R5G 1SMB5939 R5G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 39V 3W DO214AA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939HM4G 1SMB5939HM4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 39V 3W DO214AA
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939 M4G 1SMB5939 M4G 1SMB5926%20SERIES_K1701.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 39V 3W DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2AHR5G P6SMB8.2AHR5G P6SMB%20SERIES_N1701.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 7.02V 12.1V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 7.02V
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2A R5G P6SMB8.2A R5G P6SMB%20SERIES_N1701.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 7.02V 12.1V DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2AHM4G P6SMB8.2AHM4G P6SMB%20SERIES_N1701.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 7.02V 12.1V DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2A M4G P6SMB8.2A M4G P6SMB%20SERIES_N1701.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 7.02V 12.1V DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM250N02CX RFG TSM250N02CX RFG TSM250N02CX_B1811.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 5.8A SOT23
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
auf Bestellung 150000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 181922 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.77 EUR
6000+ 0.73 EUR
TSM2305CX RFG TSM2305CX RFG TSM2305_E15.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Base Part Number: TSM2305
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 16591 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12532 Stücke - Preis und Lieferfrist anzeigen
Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2305
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
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TSM210N02CX RFG TSM210N02CX RFG TSM210N02CX_B1811.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 6.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 317793 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 340756 Stücke - Preis und Lieferfrist anzeigen
14+ 1.98 EUR
15+ 1.76 EUR
100+ 1.35 EUR
500+ 1.07 EUR
1000+ 0.85 EUR
TSM2309CX RFG TSM2309CX RFG TSM2309_A15.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18855 Stücke - Preis und Lieferfrist anzeigen
TSM2307CX RFG TSM2307CX RFG TSM2307CX_D15.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 3A SOT23
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 3A SOT23
Base Part Number: TSM2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 4173 Stücke
Lieferzeit 21-28 Tag (e)
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TSM2318CX RFG TSM2318CX RFG TSM2318_C15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 40V 3.9A SOT23
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TSM2314CX RFG TSM2314CX RFG TSM2314_E15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: TSM2314
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6561 Stücke - Preis und Lieferfrist anzeigen
Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: TSM2314
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TSM2308CX RFG TSM2308CX RFG TSM2308_C15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 3A SOT23
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7188 Stücke - Preis und Lieferfrist anzeigen
Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 3A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 519 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7188 Stücke - Preis und Lieferfrist anzeigen
12+ 2.29 EUR
14+ 2 EUR
100+ 1.53 EUR
500+ 1.21 EUR
TSM2537CQ RFG TSM2537CQ RFG TSM2537CQ_A1610.pdf Taiwan Semiconductor Corporation Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22308 Stücke - Preis und Lieferfrist anzeigen
Taiwan Semiconductor Corporation Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 11406 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22308 Stücke - Preis und Lieferfrist anzeigen
TSM250N02DCQ RFG TSM250N02DCQ RFG TSM250N02D_B15.pdf Taiwan Semiconductor Corporation Description: MOSFET 2 N-CH 20V 5.8A 6TDFN
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 620mW
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
auf Bestellung 78000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13541 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.09 EUR
6000+ 1.06 EUR
Taiwan Semiconductor Corporation Description: MOSFET 2 N-CH 20V 5.8A 6TDFN
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 620mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
FET Feature: Standard
auf Bestellung 81521 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13541 Stücke - Preis und Lieferfrist anzeigen
11+ 2.57 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.48 EUR
1000+ 1.17 EUR
S1KL R3G S1KL R3G S1A%20SERIES_S2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 4712 Stücke
Lieferzeit 21-28 Tag (e)
S1DFSHMWG S1DFSHMWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 200V, AEC-Q101, SOD-1
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
3500+ 0.28 EUR
Taiwan Semiconductor Corporation Description: DIODE, 1A, 200V, AEC-Q101, SOD-1
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 6414 Stücke
Lieferzeit 21-28 Tag (e)
24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
S1DL RVG S1DL RVG S1AL%20SERIES_O15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
auf Bestellung 3857 Stücke
Lieferzeit 21-28 Tag (e)
S1JLHRVG S1JLHRVG S1AL%20SERIES_O15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
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Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
S1MLHRVG S1MLHRVG S1AL%20SERIES_Q2108.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 72 Stücke
Lieferzeit 21-28 Tag (e)
S1JLHRVG S1JLHRVG S1AL%20SERIES_O15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
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Lieferzeit 21-28 Tag (e)
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S1MLHRVG S1MLHRVG S1AL%20SERIES_Q2108.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 72 Stücke - Preis und Lieferfrist anzeigen
S1ML R3G S1ML R3G S1AL%20SERIES_O15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Base Part Number: S1ML
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1912 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: S1ML
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
S1JFS MWG S1JFS MWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 600V, SOD-128
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
3500+ 0.24 EUR
7000+ 0.23 EUR
10500+ 0.21 EUR
Taiwan Semiconductor Corporation Description: DIODE, 1A, 600V, SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
24+ 1.09 EUR
32+ 0.83 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
S1KFS MWG S1KFS MWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 800V, SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE, 1A, 800V, SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
S1KFSHMWG S1KFSHMWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 800V, AEC-Q101, SOD-1
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE, 1A, 800V, AEC-Q101, SOD-1
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
S1DFS MWG S1DFS MWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 200V, SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE, 1A, 200V, SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 6900 Stücke
Lieferzeit 21-28 Tag (e)
S1GFSHMWG S1GFSHMWG S1DFS%20SERIES_A1708.pdf Taiwan Semiconductor Corporation Description: DIODE, 1A, 400V, AEC-Q101, SOD-1
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE, 1A, 400V, AEC-Q101, SOD-1
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 6980 Stücke
Lieferzeit 21-28 Tag (e)
MTZJ39SF R0G MTZJ39SF R0G MTZJ2V0SA%20SERIES_C1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 39.13V 500MW DO34
Voltage - Zener (Nom) (Vz): 39.13 V
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 85 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23AHM2G SK23AHM2G SK22A%20SERIES_P15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A DO214AC
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Base Part Number: SK23
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23A R3G SK23A R3G SK22A%20SERIES_P15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23AHR3G SK23AHR3G SK22A%20SERIES_P15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23A M2G SK23A M2G SK22A%20SERIES_P15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SK23
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C200P RVG BZD27C200P RVG BZD27C%20SERIES_AA1806.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 200V 1W SUB SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Supplier Device Package: Sub SMA
Current - Reverse Leakage @ Vr: 1µA @ 150V
Impedance (Max) (Zzt): 750 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 200V
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE ZENER 200V 1W SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 150V
Impedance (Max) (Zzt): 750 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 200V
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 32989 Stücke
Lieferzeit 21-28 Tag (e)
BZD27C43P RVG BZD27C43P RVG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C51P RVG BZD27C51P RVG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.28 EUR
6000+ 0.27 EUR
Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 12007 Stücke
Lieferzeit 21-28 Tag (e)
26+ 1.01 EUR
33+ 0.81 EUR
100+ 0.55 EUR
500+ 0.41 EUR
1000+ 0.31 EUR
BZD27C13P RVG BZD27C13P RVG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 5575 Stücke
Lieferzeit 21-28 Tag (e)
BZD27C15P RVG BZD27C15P RVG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 5059 Stücke
Lieferzeit 21-28 Tag (e)
TS50P06G D2G TS50P06G D2G TS50P05G%20SERIES_F15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06G C2G TS40P06G C2G TS40P05G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 40A TS-6P
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Base Part Number: TS40P06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06G D2G TS40P06G D2G TS40P05G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 40A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Base Part Number: TS40P06
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06GHC2G TS40P06GHC2G TS40P05G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 40A TS-6P
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Base Part Number: TS40P06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06GHD2G TS40P06GHD2G TS40P05G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 40A TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TS40P06
Supplier Device Package: TS-6P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06G C2G TS50P06G C2G TS50P05G%20SERIES_F15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06GHC2G TS50P06GHC2G TS50P05G%20SERIES_F15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06GHD2G TS50P06GHD2G TS50P05G%20SERIES_F15.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLW RVG ES15JLW RVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: ES15
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2424 Stücke
Lieferzeit 21-28 Tag (e)
ES15DLWHRVG ES15DLWHRVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Package / Case: SOD-123W
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
auf Bestellung 5710 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
ES15DLW RQG ES15DLW RQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15DLW RVG ES15DLW RVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15DLWHRQG ES15DLWHRQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLW RQG ES15GLW RQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLW RVG ES15GLW RVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLWHRQG ES15GLWHRQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLWHRVG ES15GLWHRVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLW RQG ES15JLW RQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLWHRQG ES15JLWHRQG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLWHRVG ES15JLWHRVG ES15DLW%20SERIES_A1707.pdf Taiwan Semiconductor Corporation Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C130P R3G BZD27C%20SERIES_AA1806.pdf
BZD27C130P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Tolerance: ±6.41%
Voltage - Zener (Nom) (Vz): 132.5V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 100V
Impedance (Max) (Zzt): 300 Ohms
Power - Max: 1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD17C200P R3G BZD17C%20SERIES_K15.pdf
BZD17C200P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 800MW SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 200V
Tolerance: ±6%
Power - Max: 800mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 150V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD17C220P R3G BZD17C%20SERIES_K15.pdf
BZD17C220P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 220V 800MW SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 220V
Tolerance: ±5.68%
Power - Max: 800mW
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 160V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C10P R3G BZD27C6V8P_BZD27C220P_Jun2017.pdf
BZD27C10P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±6%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 7µA @ 7.5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949 R5G 1SMB5926%20SERIES_K1701.pdf
1SMB5949 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949HR5G 1SMB5926%20SERIES_K1701.pdf
1SMB5949HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5949HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 3W DO214AA
Impedance (Max) (Zzt): 250 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1µA @ 76V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5949 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5949 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 3W DO214AA
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 76V
Impedance (Max) (Zzt): 250 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15H45 R0G SK15H45_E13.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A R-6
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Package / Case: R6, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15H45 A0G SK15H45_E13.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A R-6
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: R-6
Package / Case: R6, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15BHR5G SK12B%20SERIES_K1701.pdf
SK15BHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15B R5G SK12B%20SERIES_K1701.pdf
SK15B R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO214AA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15B M4G SK12B%20SERIES_K1701.pdf
SK15B M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO214AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK15BHM4G SK12B%20SERIES_K1701.pdf
SK15BHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO214AA
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5238B A0G 1N5221B%20SERIES_G1804.pdf
1N5238B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.7V 500MW DO35
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 8.7V
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939HR5G 1SMB5926%20SERIES_K1701.pdf
1SMB5939HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 3W DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939 R5G 1SMB5926%20SERIES_K1701.pdf
1SMB5939 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 3W DO214AA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5939HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 3W DO214AA
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1SMB5939 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5939 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 3W DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2AHR5G P6SMB%20SERIES_N1701.pdf
P6SMB8.2AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 7.02V
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2A R5G P6SMB%20SERIES_N1701.pdf
P6SMB8.2A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2AHM4G P6SMB%20SERIES_N1701.pdf
P6SMB8.2AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6SMB8.2A M4G P6SMB%20SERIES_N1701.pdf
P6SMB8.2A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 52A
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM250N02CX RFG TSM250N02CX_B1811.pdf
TSM250N02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 5.8A SOT23
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
auf Bestellung 150000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 181922 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.77 EUR
6000+ 0.73 EUR
TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Base Part Number: TSM2305
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 16591 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24532 Stücke - Preis und Lieferfrist anzeigen
TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2305
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
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TSM210N02CX RFG TSM210N02CX_B1811.pdf
TSM210N02CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 6.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 317793 Stücke
Lieferzeit 21-28 Tag (e)
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14+ 1.98 EUR
15+ 1.76 EUR
100+ 1.35 EUR
500+ 1.07 EUR
1000+ 0.85 EUR
TSM2309CX RFG TSM2309_A15.pdf
TSM2309CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TSM2307CX RFG TSM2307CX_D15.pdf
TSM2307CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TSM2307CX RFG TSM2307CX_D15.pdf
TSM2307CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Base Part Number: TSM2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 4173 Stücke
Lieferzeit 21-28 Tag (e)
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TSM2318CX RFG TSM2318_C15.pdf
TSM2318CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 3.9A SOT23
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TSM2314CX RFG TSM2314_E15.pdf
TSM2314CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: TSM2314
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
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TSM2314CX RFG TSM2314_E15.pdf
TSM2314CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: TSM2314
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TSM2308CX RFG TSM2308_C15.pdf
TSM2308CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TSM2308CX RFG TSM2308_C15.pdf
TSM2308CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
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12+ 2.29 EUR
14+ 2 EUR
100+ 1.53 EUR
500+ 1.21 EUR
TSM2537CQ RFG TSM2537CQ_A1610.pdf
TSM2537CQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
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TSM2537CQ RFG TSM2537CQ_A1610.pdf
TSM2537CQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 11406 Stücke
Lieferzeit 21-28 Tag (e)
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TSM250N02DCQ RFG TSM250N02D_B15.pdf
TSM250N02DCQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 5.8A 6TDFN
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 620mW
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
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Lieferzeit 21-28 Tag (e)
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3000+ 1.09 EUR
6000+ 1.06 EUR
TSM250N02DCQ RFG TSM250N02D_B15.pdf
TSM250N02DCQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 5.8A 6TDFN
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 620mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
FET Feature: Standard
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11+ 2.57 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.48 EUR
1000+ 1.17 EUR
S1KL R3G S1A%20SERIES_S2102.pdf
S1KL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
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S1KL R3G S1A%20SERIES_S2102.pdf
S1KL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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auf Bestellung 3600 Stücke - Preis und Lieferfrist anzeigen
S1DFSHMWG S1DFS%20SERIES_A1708.pdf
S1DFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 200V, AEC-Q101, SOD-1
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
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3500+ 0.28 EUR
S1DFSHMWG S1DFS%20SERIES_A1708.pdf
S1DFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 200V, AEC-Q101, SOD-1
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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24+ 1.12 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
S1DL RVG S1AL%20SERIES_O15.pdf
S1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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S1DL RVG S1AL%20SERIES_O15.pdf
S1DL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
auf Bestellung 3857 Stücke
Lieferzeit 21-28 Tag (e)
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S1JLHRVG S1AL%20SERIES_O15.pdf
S1JLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 9703 Stücke
Lieferzeit 21-28 Tag (e)
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S1MLHRVG S1AL%20SERIES_Q2108.pdf
S1MLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 72 Stücke
Lieferzeit 21-28 Tag (e)
S1JLHRVG S1AL%20SERIES_O15.pdf
S1JLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
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Lieferzeit 21-28 Tag (e)
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S1MLHRVG S1AL%20SERIES_Q2108.pdf
S1MLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 72 Stücke - Preis und Lieferfrist anzeigen
S1ML R3G S1AL%20SERIES_O15.pdf
S1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Base Part Number: S1ML
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1912 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
S1ML R3G S1AL%20SERIES_O15.pdf
S1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: S1ML
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.8µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 1800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1912 Stücke - Preis und Lieferfrist anzeigen
S1JFS MWG S1DFS%20SERIES_A1708.pdf
S1JFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 600V, SOD-128
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
3500+ 0.24 EUR
7000+ 0.23 EUR
10500+ 0.21 EUR
S1JFS MWG S1DFS%20SERIES_A1708.pdf
S1JFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 600V, SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
32+ 0.83 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
S1KFS MWG S1DFS%20SERIES_A1708.pdf
S1KFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 800V, SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
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S1KFS MWG S1DFS%20SERIES_A1708.pdf
S1KFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 800V, SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
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S1KFSHMWG S1DFS%20SERIES_A1708.pdf
S1KFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 800V, AEC-Q101, SOD-1
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 14000 Stücke
Lieferzeit 21-28 Tag (e)
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S1KFSHMWG S1DFS%20SERIES_A1708.pdf
S1KFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 800V, AEC-Q101, SOD-1
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S1K
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
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S1DFS MWG S1DFS%20SERIES_A1708.pdf
S1DFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 200V, SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6900 Stücke - Preis und Lieferfrist anzeigen
S1DFS MWG S1DFS%20SERIES_A1708.pdf
S1DFS MWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 200V, SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 6900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
S1GFSHMWG S1DFS%20SERIES_A1708.pdf
S1GFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 400V, AEC-Q101, SOD-1
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6980 Stücke - Preis und Lieferfrist anzeigen
S1GFSHMWG S1DFS%20SERIES_A1708.pdf
S1GFSHMWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, 1A, 400V, AEC-Q101, SOD-1
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 6980 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
MTZJ39SF R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ39SF R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39.13V 500MW DO34
Voltage - Zener (Nom) (Vz): 39.13 V
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 85 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23AHM2G SK22A%20SERIES_P15.pdf
SK23AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AC
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Base Part Number: SK23
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23A R3G SK22A%20SERIES_P15.pdf
SK23A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23AHR3G SK22A%20SERIES_P15.pdf
SK23AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SK23A M2G SK22A%20SERIES_P15.pdf
SK23A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SK23
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C200P RVG BZD27C%20SERIES_AA1806.pdf
BZD27C200P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1W SUB SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Supplier Device Package: Sub SMA
Current - Reverse Leakage @ Vr: 1µA @ 150V
Impedance (Max) (Zzt): 750 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 200V
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
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BZD27C200P RVG BZD27C%20SERIES_AA1806.pdf
BZD27C200P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1W SUB SMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 150V
Impedance (Max) (Zzt): 750 Ohms
Power - Max: 1W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 200V
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 32989 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
BZD27C43P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C51P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C51P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12007 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.28 EUR
6000+ 0.27 EUR
BZD27C51P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C51P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 12007 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
33+ 0.81 EUR
100+ 0.55 EUR
500+ 0.41 EUR
1000+ 0.31 EUR
BZD27C13P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5575 Stücke - Preis und Lieferfrist anzeigen
BZD27C13P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 5575 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
BZD27C15P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5059 Stücke - Preis und Lieferfrist anzeigen
BZD27C15P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C15P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 5059 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
TS50P06G D2G TS50P05G%20SERIES_F15.pdf
TS50P06G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06G C2G TS40P05G%20SERIES_E15.pdf
TS40P06G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Base Part Number: TS40P06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06G D2G TS40P05G%20SERIES_E15.pdf
TS40P06G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Base Part Number: TS40P06
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06GHC2G TS40P05G%20SERIES_E15.pdf
TS40P06GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Base Part Number: TS40P06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS40P06GHD2G TS40P05G%20SERIES_E15.pdf
TS40P06GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TS40P06
Supplier Device Package: TS-6P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06G C2G TS50P05G%20SERIES_F15.pdf
TS50P06G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06GHC2G TS50P05G%20SERIES_F15.pdf
TS50P06GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS50P06GHD2G TS50P05G%20SERIES_F15.pdf
TS50P06GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A TS-6P
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Average Rectified (Io): 50A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLW RVG ES15DLW%20SERIES_A1707.pdf
ES15JLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Base Part Number: ES15
Manufacturer: Taiwan Semiconductor Corporation
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2424 Stücke
Lieferzeit 21-28 Tag (e)
ES15DLWHRVG ES15DLW%20SERIES_A1707.pdf
ES15DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Package / Case: SOD-123W
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
auf Bestellung 5710 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
ES15DLWHRVG ES15DLW%20SERIES_A1707.pdf
ES15DLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5710 Stücke - Preis und Lieferfrist anzeigen
ES15DLW RQG ES15DLW%20SERIES_A1707.pdf
ES15DLW RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15DLW RVG ES15DLW%20SERIES_A1707.pdf
ES15DLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15DLWHRQG ES15DLW%20SERIES_A1707.pdf
ES15DLWHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLW RQG ES15DLW%20SERIES_A1707.pdf
ES15GLW RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLW RVG ES15DLW%20SERIES_A1707.pdf
ES15GLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLWHRQG ES15DLW%20SERIES_A1707.pdf
ES15GLWHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15GLWHRVG ES15DLW%20SERIES_A1707.pdf
ES15GLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLW RQG ES15DLW%20SERIES_A1707.pdf
ES15JLW RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLWHRQG ES15DLW%20SERIES_A1707.pdf
ES15JLWHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES15JLWHRVG ES15DLW%20SERIES_A1707.pdf
ES15JLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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