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Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
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TSM850N06CX RFG TSM850N06CX RFG TSM850N06CX_C1811.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 3A SOT23
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 5645 Stücke
Lieferzeit 21-28 Tag (e)
BYG20J R3G BYG20J R3G BYG20D%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 935 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 590 Stücke - Preis und Lieferfrist anzeigen
MBR10100CTC0 MBR10100CTC0 MBR10xxCT_Rev.N1512_Dec16,2015.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 100V TO220AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR10100HC0G MBR10100HC0G MBR1035%20SERIES_M2103.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 100V 10A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC30A 1.5SMC30A littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf 1.5SMC.pdf DO-214AB-SMC-TVS-1.5SMC-Series.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5868 Stücke - Preis und Lieferfrist anzeigen
P6KE250CAHR0G P6KE250CAHR0G P6KE%20SERIES_M1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 214VWM 344VC DO204AC
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Voltage - Reverse Standoff (Typ): 214V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Applications: Automotive
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Clamping (Max) @ Ipp: 344V
Voltage - Breakdown (Min): 237V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA P6KE15CA P6KE SERIES_M1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO15
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 47239 Stücke - Preis und Lieferfrist anzeigen
Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO15
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2374 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47239 Stücke - Preis und Lieferfrist anzeigen
13+ 2.16 EUR
14+ 1.91 EUR
100+ 1.46 EUR
500+ 1.16 EUR
1000+ 0.93 EUR
P6KE15CA R0G P6KE15CA R0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA A0G P6KE15CA A0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: General Purpose
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHR0G P6KE15CAHR0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Type: Zener
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHA0G P6KE15CAHA0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA B0G P6KE15CA B0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHB0G P6KE15CAHB0G P6KE%20SERIES_O2109.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JBHR5G ES3JBHR5G ES3AB%20SERIES_C2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 2550 Stücke
Lieferzeit 21-28 Tag (e)
850+ 0.99 EUR
1700+ 0.79 EUR
2550+ 0.71 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
auf Bestellung 2851 Stücke
Lieferzeit 21-28 Tag (e)
15+ 1.85 EUR
16+ 1.63 EUR
100+ 1.25 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 10µA @ 600V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
Current - Average Rectified (Io): 3A
auf Bestellung 2889 Stücke
Lieferzeit 21-28 Tag (e)
ES3JB R5G ES3JB R5G ES3AB%20SERIES_C2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
auf Bestellung 155 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.26 EUR
13+ 2.03 EUR
100+ 1.58 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
Current - Average Rectified (Io): 3A
auf Bestellung 448 Stücke
Lieferzeit 21-28 Tag (e)
ES3J V7G ES3J V7G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
850+ 1.66 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 2112 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.89 EUR
11+ 2.58 EUR
100+ 2.02 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 844 Stücke
Lieferzeit 21-28 Tag (e)
ES3J R7G ES3J R7G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
ES3JB M4G ES3JB M4G ES3AB%20SERIES_C2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JBHM4G ES3JBHM4G ES3AB%20SERIES_C2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3J V6G ES3J V6G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JHR7G ES3JHR7G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3J M6G ES3J M6G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JHM6G ES3JHM6G ES3A%20SERIES_L1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS23M RSG SS23M RSG SS22M%20SERIES_L1810.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A MICRO SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18550 Stücke
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auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
SS23MHRSG SS23MHRSG SS22M%20SERIES_L1810.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A MICRO SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18010 Stücke
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SS23L RVG SS23L RVG SS22L%20SERIES_N15.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 2A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Operating Temperature - Junction: -55°C ~ 125°C
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2170 Stücke
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auf Bestellung 2145 Stücke - Preis und Lieferfrist anzeigen
HER107G A0G HER107G A0G HER101G%20SERIES_L2104.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HER107G R1G HER107G R1G HER101G%20SERIES_L2104.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1A DO204AL
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HER107G B0G HER107G B0G HER101G%20SERIES_L2104.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817A C9G TPC817A C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS 4DIP
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817D C9G TPC817D C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS 4DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 300% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MB C9G TPC817MB C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS DIP-4M
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 260% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 130% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TPC817MC C9G TPC817MC C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS DIP-4M
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MA C9G TPC817MA C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS DIP-4M
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 160% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 80% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MD C9G TPC817MD C9G TPC817%20SERIES_C1612.pdf Taiwan Semiconductor Corporation Description: OPTOISO 5KV TRANS DIP-4M
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Packaging: Tube
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 300% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B R0G BZW06-13B R0G BZW06%20SERIES_J1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8V 27.2V DO204AC
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 27.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B A0G BZW06-13B A0G BZW06%20SERIES_J1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8V 27.2V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13 B0G BZW06-13 B0G BZW06%20SERIES_J1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8V 27.2V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Voltage - Clamping (Max) @ Ipp: 27.2V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B B0G BZW06-13B B0G BZW06%20SERIES_J1602.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 12.8V 27.2V DO204AC
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR420S V7G MUR420S V7G MUR420S%20SERIES_D1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 4A DO214AB
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
auf Bestellung 1083 Stücke
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MUR420S R7G MUR420S R7G MUR420S%20SERIES_D1708.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 4A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320 A0G SR320 A0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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SR320 R0G SR320 R0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HR0G SR320HR0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HA0G SR320HA0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320 B0G SR320 B0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HB0G SR320HB0G SR302%20SERIES_J2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 200V 3A DO201AD
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM2307CX RFG TSM2307CX RFG TSM2307CX_D15.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 3A SOT23
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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TSC4505CX RFG TSC4505CX RFG TSC4505_C15.pdf Taiwan Semiconductor Corporation Description: TRANSISTOR NPN 400V 0.3A
Base Part Number: TSC4505
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 225mW
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector (Ic) (Max): 300mA
Part Status: Active
Transistor Type: NPN
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
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Lieferzeit 21-28 Tag (e)
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Taiwan Semiconductor Corporation Description: TRANSISTOR NPN 400V 0.3A
Frequency - Transition: 20MHz
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 300mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
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TSC497CX RFG TSC497CX RFG TSC497CX_A1811.pdf Taiwan Semiconductor Corporation Description: SOT-23, 300V, 500A, NPN BIPOLAR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 250mA
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: SOT-23, 300V, 500A, NPN BIPOLAR
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 75MHz
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
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SMBJ26A SMBJ26A SMBJ%20SERIES_P1812.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Supplier Device Package: DO-214AA (SMB)
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 14.3A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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auf Bestellung 294852 Stücke - Preis und Lieferfrist anzeigen
MBR1060CT C0G MBR1060CT C0G MBR1035CT%20SERIES_O2104.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR1060CTHC0G MBR1060CTHC0G MBR1035CT%20SERIES_O2104.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ24CAHR3G SMAJ24CAHR3G SMAJ%20SERIES_S1901.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 24V 38.9V DO214AC
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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PGSMAJ24CA E3G PGSMAJ24CA E3G PGSMAJ%20SERIES_B1805.pdf Taiwan Semiconductor Corporation Description: DIODE, TVS, BIDIRECTIONAL
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 24V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
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LL4001G L0 LL4001G%20SERIES_E15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1A MELF
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55B15 A0G BZX55B15 A0G BZX55B2V4%20SERIES_F1610.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BZT52C3V6 RHG BZT52C3V6 RHG BZT52C2V4%20SERIES_G1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 3.6V 500MW SOD123F
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 4.5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
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1N5822 R0G 1N5822 R0G 1N5820%20SERIES_I2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5822 A0G 1N5822 A0G 1N5820%20SERIES_I2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 3A DO201AD
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5822HR0G 1N5822HR0G 1N5820%20SERIES_I2105.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 3A DO201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ20A SMBJ20A SMBJ%20SERIES_P1812.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 20V 32.4V DO214AA
Type: Zener
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Unidirectional Channels: 1
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SMBJ20A R5G SMBJ20A R5G SMBJ%20SERIES_P1812.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 20V 32.4V DO214AA
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Applications: General Purpose
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM160P02CS RLG TSM160P02CS RLG TSM160P02_A15.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 11A 8SOP
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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TSM160N10LCR RLG TSM160N10LCR RLG TSM160N10LCR_A1610.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 46A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 4431pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5592 Stücke
Lieferzeit 21-28 Tag (e)
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TSM160N10CZ C0G TSM160N10CZ C0G TSM160N10_C15.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 160A TO220
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM160
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
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TSM160P04LCRHRLG TSM160P04LCRHRLG TSM160P04LCRH_B1707.pdf Taiwan Semiconductor Corporation Description: MOSFET P-CH 40V 51A 8PDFN
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: TSM160
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V
Vgs (Max): ±20V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: MOSFET P-CH 40V 51A 8PDFN
FET Type: P-Channel
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM160
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Discontinued at Digi-Key
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
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MBR735 C0G MBR735 C0G MBR735%20SERIES_J13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 35V 7.5A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR735HC0G MBR735HC0G MBR735%20SERIES_J13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 35V 7.5A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ70A SMBJ70A SMBJ%20SERIES_P1812.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 70V 113V DO214AA
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
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TSM085N03PQ33 RGG TSM085N03PQ33 RGG TSM085N03PQ33_D1608.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 52A 8PDFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V
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TSM230N06PQ56 RLG TSM230N06PQ56 RLG TSM230N06PQ56_B1710.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 44A 8PDFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 20V
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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TSM230N06CP ROG TSM230N06CP ROG TSM230N06_D1802.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 34A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
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GBU805HD2G GBU805HD2G GBU801%20SERIES_K1705.pdf Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 600V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1MFL HS1MFL HS1AFL%20SERIES_B2103.pdf Taiwan Semiconductor Corporation Description: 75NS 1A 1000V HIGH EFFICIENT REC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
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3000+ 0.23 EUR
6000+ 0.22 EUR
15000+ 0.2 EUR
30000+ 0.19 EUR
Taiwan Semiconductor Corporation Description: 75NS 1A 1000V HIGH EFFICIENT REC
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123F
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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25+ 1.04 EUR
33+ 0.79 EUR
100+ 0.49 EUR
500+ 0.34 EUR
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Taiwan Semiconductor Corporation Description: 75NS 1A 1000V HIGH EFFICIENT REC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A (DC)
Diode Type: Standard
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Lieferzeit 21-28 Tag (e)
HS1MLW RVG HS1MLW RVG HS1DLW%20SERIES_C2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SOD123W
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: HS1M
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1ML R3G HS1ML R3G HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
1800+ 0.58 EUR
3600+ 0.53 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 3600 Stücke
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21+ 1.28 EUR
100+ 0.96 EUR
500+ 0.75 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
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Lieferzeit 21-28 Tag (e)
HS1ML RVG HS1ML RVG HS1AL%20SERIES_B14.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
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TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 5645 Stücke
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BYG20J R3G BYG20D%20SERIES_E15.pdf
BYG20J R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 935 Stücke
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MBR10100CTC0 MBR10xxCT_Rev.N1512_Dec16,2015.pdf
MBR10100CTC0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V TO220AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR10100HC0G MBR1035%20SERIES_M2103.pdf
MBR10100HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC30A littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf 1.5SMC.pdf DO-214AB-SMC-TVS-1.5SMC-Series.pdf
1.5SMC30A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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P6KE250CAHR0G P6KE%20SERIES_M1602.pdf
P6KE250CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 214VWM 344VC DO204AC
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Voltage - Reverse Standoff (Typ): 214V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Applications: Automotive
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Clamping (Max) @ Ipp: 344V
Voltage - Breakdown (Min): 237V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA P6KE SERIES_M1602.pdf
P6KE15CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO15
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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P6KE15CA P6KE SERIES_M1602.pdf
P6KE15CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO15
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2374 Stücke
Lieferzeit 21-28 Tag (e)
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13+ 2.16 EUR
14+ 1.91 EUR
100+ 1.46 EUR
500+ 1.16 EUR
1000+ 0.93 EUR
P6KE15CA R0G P6KE%20SERIES_O2109.pdf
P6KE15CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA A0G P6KE%20SERIES_O2109.pdf
P6KE15CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: General Purpose
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHR0G P6KE%20SERIES_O2109.pdf
P6KE15CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Type: Zener
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHA0G P6KE%20SERIES_O2109.pdf
P6KE15CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CA B0G P6KE%20SERIES_O2109.pdf
P6KE15CA B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE15CAHB0G P6KE%20SERIES_O2109.pdf
P6KE15CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AC
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 21.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 29A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JBHR5G ES3AB%20SERIES_C2102.pdf
ES3JBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 2550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5740 Stücke - Preis und Lieferfrist anzeigen
850+ 0.99 EUR
1700+ 0.79 EUR
2550+ 0.71 EUR
ES3JBHR5G ES3AB%20SERIES_C2102.pdf
ES3JBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
auf Bestellung 2851 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5439 Stücke - Preis und Lieferfrist anzeigen
15+ 1.85 EUR
16+ 1.63 EUR
100+ 1.25 EUR
ES3JBHR5G ES3AB%20SERIES_B1706.pdf
ES3JBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 10µA @ 600V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
Current - Average Rectified (Io): 3A
auf Bestellung 2889 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5401 Stücke - Preis und Lieferfrist anzeigen
ES3JB R5G ES3AB%20SERIES_C2102.pdf
ES3JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 603 Stücke - Preis und Lieferfrist anzeigen
ES3JB R5G ES3AB%20SERIES_C2102.pdf
ES3JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
auf Bestellung 155 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 448 Stücke - Preis und Lieferfrist anzeigen
12+ 2.26 EUR
13+ 2.03 EUR
100+ 1.58 EUR
ES3JB R5G ES3AB%20SERIES_B1706.pdf
ES3JB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
Current - Average Rectified (Io): 3A
auf Bestellung 448 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 155 Stücke - Preis und Lieferfrist anzeigen
ES3J V7G ES3A%20SERIES_L1708.pdf
ES3J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2956 Stücke - Preis und Lieferfrist anzeigen
850+ 1.66 EUR
ES3J V7G ES3A%20SERIES_L1708.pdf
ES3J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 2112 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1694 Stücke - Preis und Lieferfrist anzeigen
10+ 2.89 EUR
11+ 2.58 EUR
100+ 2.02 EUR
ES3J V7G ES3A%20SERIES_L1708.pdf
ES3J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 844 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2962 Stücke - Preis und Lieferfrist anzeigen
ES3J R7G ES3A%20SERIES_L1708.pdf
ES3J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 48 Stücke - Preis und Lieferfrist anzeigen
ES3J R7G ES3A%20SERIES_L1708.pdf
ES3J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Not For New Designs
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
ES3JB M4G ES3AB%20SERIES_C2102.pdf
ES3JB M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JBHM4G ES3AB%20SERIES_C2102.pdf
ES3JBHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3J V6G ES3A%20SERIES_L1708.pdf
ES3J V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JHR7G ES3A%20SERIES_L1708.pdf
ES3JHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3J M6G ES3A%20SERIES_L1708.pdf
ES3J M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3JHM6G ES3A%20SERIES_L1708.pdf
ES3JHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS23M RSG SS22M%20SERIES_L1810.pdf
SS23M RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A MICRO SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
SS23MHRSG SS22M%20SERIES_L1810.pdf
SS23MHRSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A MICRO SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18010 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2395 Stücke - Preis und Lieferfrist anzeigen
SS23L RVG SS22L%20SERIES_N15.pdf
SS23L RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Operating Temperature - Junction: -55°C ~ 125°C
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 400µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2170 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2145 Stücke - Preis und Lieferfrist anzeigen
HER107G A0G HER101G%20SERIES_L2104.pdf
HER107G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HER107G R1G HER101G%20SERIES_L2104.pdf
HER107G R1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HER107G B0G HER101G%20SERIES_L2104.pdf
HER107G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817A C9G TPC817%20SERIES_C1612.pdf
TPC817A C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS 4DIP
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817D C9G TPC817%20SERIES_C1612.pdf
TPC817D C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS 4DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 300% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MB C9G TPC817%20SERIES_C1612.pdf
TPC817MB C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS DIP-4M
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 260% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 130% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2048 Stücke - Preis und Lieferfrist anzeigen
TPC817MC C9G TPC817%20SERIES_C1612.pdf
TPC817MC C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS DIP-4M
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MA C9G TPC817%20SERIES_C1612.pdf
TPC817MA C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS DIP-4M
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 160% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 80% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TPC817MD C9G TPC817%20SERIES_C1612.pdf
TPC817MD C9G
Hersteller: Taiwan Semiconductor Corporation
Description: OPTOISO 5KV TRANS DIP-4M
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Packaging: Tube
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 300% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B R0G BZW06%20SERIES_J1602.pdf
BZW06-13B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 27.2V
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B A0G BZW06%20SERIES_J1602.pdf
BZW06-13B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.2V
Voltage - Breakdown (Min): 14.3V
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13 B0G BZW06%20SERIES_J1602.pdf
BZW06-13 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 14.3V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Voltage - Clamping (Max) @ Ipp: 27.2V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZW06-13B B0G BZW06%20SERIES_J1602.pdf
BZW06-13B B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 12.8V
Current - Peak Pulse (10/1000µs): 147A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 27.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR420S V7G MUR420S%20SERIES_D1708.pdf
MUR420S V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
auf Bestellung 1083 Stücke
Lieferzeit 21-28 Tag (e)
MUR420S R7G MUR420S%20SERIES_D1708.pdf
MUR420S R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320 A0G SR302%20SERIES_J2105.pdf
SR320 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SR320 A0G SR302%20SERIES_J2105.pdf
SR320 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
SR320 R0G SR302%20SERIES_J2105.pdf
SR320 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HR0G SR302%20SERIES_J2105.pdf
SR320HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HA0G SR302%20SERIES_J2105.pdf
SR320HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320 B0G SR302%20SERIES_J2105.pdf
SR320 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR320HB0G SR302%20SERIES_J2105.pdf
SR320HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM2307CX RFG TSM2307CX_D15.pdf
TSM2307CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 39542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4173 Stücke - Preis und Lieferfrist anzeigen
TSC4505CX RFG TSC4505_C15.pdf
TSC4505CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANSISTOR NPN 400V 0.3A
Base Part Number: TSC4505
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 225mW
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector (Ic) (Max): 300mA
Part Status: Active
Transistor Type: NPN
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 19956 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30706 Stücke - Preis und Lieferfrist anzeigen
TSC4505CX RFG TSC4505_C15.pdf
TSC4505CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANSISTOR NPN 400V 0.3A
Frequency - Transition: 20MHz
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 300mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
auf Bestellung 11590 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39072 Stücke - Preis und Lieferfrist anzeigen
TSC497CX RFG TSC497CX_A1811.pdf
TSC497CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-23, 300V, 500A, NPN BIPOLAR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 250mA
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11880 Stücke - Preis und Lieferfrist anzeigen
TSC497CX RFG TSC497CX_A1811.pdf
TSC497CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-23, 300V, 500A, NPN BIPOLAR
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 75MHz
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
auf Bestellung 11880 Stücke
Lieferzeit 21-28 Tag (e)
SMBJ26A SMBJ%20SERIES_P1812.pdf
SMBJ26A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Supplier Device Package: DO-214AA (SMB)
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 14.3A
Voltage - Clamping (Max) @ Ipp: 42.1V
Voltage - Breakdown (Min): 28.9V
Voltage - Reverse Standoff (Typ): 26V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6570 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 294852 Stücke - Preis und Lieferfrist anzeigen
MBR1060CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR1060CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR1060CTHC0G MBR1035CT%20SERIES_O2104.pdf
MBR1060CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ24CAHR3G SMAJ%20SERIES_S1901.pdf
SMAJ24CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AC
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5267 Stücke - Preis und Lieferfrist anzeigen
PGSMAJ24CA E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ24CA E3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, BIDIRECTIONAL
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 24V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
auf Bestellung 3415 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5181 Stücke - Preis und Lieferfrist anzeigen
LL4001G L0 LL4001G%20SERIES_E15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A MELF
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55B15 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B15 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
BZT52C3V6 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C3V6 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW SOD123F
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 4.5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
auf Bestellung 3433 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
1N5822 R0G 1N5820%20SERIES_I2105.pdf
1N5822 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5822 A0G 1N5820%20SERIES_I2105.pdf
1N5822 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5822HR0G 1N5820%20SERIES_I2105.pdf
1N5822HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ20A SMBJ%20SERIES_P1812.pdf
SMBJ20A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20V 32.4V DO214AA
Type: Zener
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Unidirectional Channels: 1
auf Bestellung 15668 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 131344 Stücke - Preis und Lieferfrist anzeigen
SMBJ20A R5G SMBJ%20SERIES_P1812.pdf
SMBJ20A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20V 32.4V DO214AA
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Applications: General Purpose
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM160P02CS RLG TSM160P02_A15.pdf
TSM160P02CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 11A 8SOP
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5507 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2859 Stücke - Preis und Lieferfrist anzeigen
TSM160N10LCR RLG TSM160N10LCR_A1610.pdf
TSM160N10LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 46A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 4431pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5592 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 158 Stücke - Preis und Lieferfrist anzeigen
TSM160N10CZ C0G TSM160N10_C15.pdf
TSM160N10CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 160A TO220
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM160
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
TSM160P04LCRHRLG TSM160P04LCRH_B1707.pdf
TSM160P04LCRHRLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 40V 51A 8PDFN
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: TSM160
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V
Vgs (Max): ±20V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17 Stücke - Preis und Lieferfrist anzeigen
TSM160P04LCRHRLG TSM160P04LCRH_B1707.pdf
TSM160P04LCRHRLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 40V 51A 8PDFN
FET Type: P-Channel
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: TSM160
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Discontinued at Digi-Key
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
auf Bestellung 17 Stücke
Lieferzeit 21-28 Tag (e)
MBR735 C0G MBR735%20SERIES_J13.pdf
MBR735 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 7.5A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR735HC0G MBR735%20SERIES_J13.pdf
MBR735HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 7.5A TO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 35V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ70A SMBJ%20SERIES_P1812.pdf
SMBJ70A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70V 113V DO214AA
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
auf Bestellung 4973 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40827 Stücke - Preis und Lieferfrist anzeigen
TSM085N03PQ33 RGG TSM085N03PQ33_D1608.pdf
TSM085N03PQ33 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 52A 8PDFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V
auf Bestellung 4109 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34488 Stücke - Preis und Lieferfrist anzeigen
TSM230N06PQ56 RLG TSM230N06PQ56_B1710.pdf
TSM230N06PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 44A 8PDFN
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 20V
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1190 Stücke
Lieferzeit 21-28 Tag (e)
TSM230N06CP ROG TSM230N06_D1802.pdf
TSM230N06CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
auf Bestellung 7455 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
GBU805HD2G GBU801%20SERIES_K1705.pdf
GBU805HD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1MFL HS1AFL%20SERIES_B2103.pdf
HS1MFL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS 1A 1000V HIGH EFFICIENT REC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
auf Bestellung 33000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43550 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.23 EUR
6000+ 0.22 EUR
15000+ 0.2 EUR
30000+ 0.19 EUR
HS1MFL HS1AFL%20SERIES_B2103.pdf
HS1MFL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS 1A 1000V HIGH EFFICIENT REC
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123F
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 35535 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 41015 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
33+ 0.79 EUR
100+ 0.49 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
HS1MFL HS1AFL%20SERIES_A1804.pdf
HS1MFL
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS 1A 1000V HIGH EFFICIENT REC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A (DC)
Diode Type: Standard
auf Bestellung 8015 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 68535 Stücke - Preis und Lieferfrist anzeigen
HS1MLW RVG HS1DLW%20SERIES_C2103.pdf
HS1MLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123W
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: HS1M
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1ML R3G HS1AL%20SERIES_B14.pdf
HS1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6690 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.58 EUR
3600+ 0.53 EUR
HS1ML R3G HS1AL%20SERIES_B14.pdf
HS1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6690 Stücke - Preis und Lieferfrist anzeigen
18+ 1.51 EUR
21+ 1.28 EUR
100+ 0.96 EUR
500+ 0.75 EUR
HS1ML R3G HS1AL%20SERIES_B14.pdf
HS1ML R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
auf Bestellung 3090 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7200 Stücke - Preis und Lieferfrist anzeigen
HS1ML RVG HS1AL%20SERIES_B14.pdf
HS1ML RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2108 Stücke - Preis und Lieferfrist anzeigen
HS1ML RVG HS1AL%20SERIES_B14.pdf
HS1ML RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2092 Stücke - Preis und Lieferfrist anzeigen
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