Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66369) > Seite 1087 nach 1107
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BZT52B5V6S RR | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R |
Produkt ist nicht verfügbar |
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SFAF1606G | Taiwan Semiconductor |
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC |
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SA45A A0G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R |
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SMDJ33A | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R |
Produkt ist nicht verfügbar |
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SMDJ33AHR7G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R |
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SMDJ33A R6G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R |
Produkt ist nicht verfügbar |
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| SMDJ33AHV7G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R |
Produkt ist nicht verfügbar |
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| HER307G | Taiwan Semiconductor |
Diode Switching 800V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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TS19721ACS RLG | Taiwan Semiconductor |
LED Driver 2600uA SupplyCurrent 8-Pin SOP |
Produkt ist nicht verfügbar |
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1.5KE43A | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201 |
Produkt ist nicht verfügbar |
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BZY55B36 RYG | Taiwan Semiconductor |
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B3V6 RYG | Taiwan Semiconductor |
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B4V7 RYG | Taiwan Semiconductor |
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B5V1 RYG | Taiwan Semiconductor |
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B18 RYG | Taiwan Semiconductor |
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B20 RYG | Taiwan Semiconductor |
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B24 RYG | Taiwan Semiconductor |
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B27 RYG | Taiwan Semiconductor |
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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BZY55B2V7 RYG | Taiwan Semiconductor |
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
Produkt ist nicht verfügbar |
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SMAJ43AHM2G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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SMAJ43A M2G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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SMAJ43A M2 | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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SMAJ43A | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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SMAJ43A R3G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA |
Produkt ist nicht verfügbar |
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| SMAJ43AHR3G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BC548C B1G | TAIWAN SEMICONDUCTOR |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 420...800 Mounting: THT Kind of package: bulk Pulsed collector current: 0.2A |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM850N06CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.3A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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RMB6S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE100CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 137V Breakdown voltage: 100V Max. forward impulse current: 11.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSS54U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Load current: 0.2A Max. forward impulse current: 0.3A Max. forward voltage: 1V Max. off-state voltage: 30V Case: 0603 |
Produkt ist nicht verfügbar |
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| TSM60N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM60N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM60N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MBR20100CT C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A |
Produkt ist nicht verfügbar |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
Produkt ist nicht verfügbar |
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| TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
Produkt ist nicht verfügbar |
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BZX55C12 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 1180 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT3906 RFG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 1609 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CS RLG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOP8 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CX RFG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOT23 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
Produkt ist nicht verfügbar |
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LL4148 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
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LL4148 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Kind of package: Ammo Pack Power dissipation: 0.5W |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.5W |
auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2222A RFG | TAIWAN SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23-3 Mounting: SMD Frequency: 300MHz Kind of package: reel; tape |
auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2N7002KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 910pC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SK36A R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1.5KE27A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE Case: DO201 Mounting: THT Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Tolerance: ±5% Max. forward impulse current: 42A Max. off-state voltage: 37.5V Breakdown voltage: 27.1V Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 70A Kind of package: tape Capacitance: 200pF |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Tolerance: ±5% |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE15CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Kind of package: tape Zener current: 20mA |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C5V1 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 5.1V; 45mA; tape; DO41; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 45mA Leakage current: 1µA |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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TS9015CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1V Output voltage: 0.9...7V Output current: 0.3A Case: SOT23-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...7V |
Produkt ist nicht verfügbar |
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MMBT2907A RFG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23-3 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
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SS12L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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US1M M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 30A Max. off-state voltage: 1kV Features of semiconductor devices: ultrafast switching Capacitance: 10pF Reverse recovery time: 75ns |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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TS4148 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: 1206 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.5W |
auf Bestellung 9625 Stücke: Lieferzeit 14-21 Tag (e) |
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UF4007 R0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Capacitance: 17pF |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZT52B5V6S RR |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFAF1606G |
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Hersteller: Taiwan Semiconductor
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA45A A0G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ33A |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ33AHR7G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ33A R6G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ33AHV7G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HER307G |
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Hersteller: Taiwan Semiconductor
Diode Switching 800V 3A 2-Pin DO-201AD T/R
Diode Switching 800V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS19721ACS RLG |
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Hersteller: Taiwan Semiconductor
LED Driver 2600uA SupplyCurrent 8-Pin SOP
LED Driver 2600uA SupplyCurrent 8-Pin SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE43A |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B36 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B3V6 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B4V7 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
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| BZY55B5V1 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B18 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B20 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B24 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B27 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZY55B2V7 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43AHM2G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43A M2G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43A M2 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43A |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43A R3G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ43AHR3G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC548C B1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 420+ | 0.17 EUR |
| TSM850N06CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 222+ | 0.32 EUR |
| 264+ | 0.27 EUR |
| RMB6S |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 1.5KE100CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| TSS54U RGG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.2A
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: 0603
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.2A
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N600CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N600CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N600CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR20100CT C0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM10N80CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM10N80CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C12 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BZX55C12 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 625+ | 0.11 EUR |
| 995+ | 0.072 EUR |
| 1180+ | 0.06 EUR |
| MMBT3906 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 1609 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 685+ | 0.1 EUR |
| 1244+ | 0.057 EUR |
| 1609+ | 0.044 EUR |
| TS78L09CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 104+ | 0.69 EUR |
| TS78L09CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LL4148 L0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LL4148 L1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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| 1N4448 A0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.5W
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 145+ | 0.49 EUR |
| 1N4448 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 349+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 590+ | 0.12 EUR |
| 657+ | 0.11 EUR |
| 1177+ | 0.061 EUR |
| 1306+ | 0.055 EUR |
| 1573+ | 0.045 EUR |
| MMBT2222A RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Frequency: 300MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Frequency: 300MHz
Kind of package: reel; tape
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 556+ | 0.13 EUR |
| 899+ | 0.08 EUR |
| TSM2N7002KCX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SK36A R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE27A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Case: DO201
Mounting: THT
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 42A
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Case: DO201
Mounting: THT
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 42A
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 1N5822 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 1.5KE400A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 107+ | 0.67 EUR |
| 132+ | 0.54 EUR |
| P6KE15CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| BZX85C12 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: tape
Zener current: 20mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: tape
Zener current: 20mA
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 341+ | 0.21 EUR |
| 616+ | 0.12 EUR |
| 735+ | 0.097 EUR |
| BZX85C5V1 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; 45mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 45mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; 45mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 45mA
Leakage current: 1µA
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 257+ | 0.28 EUR |
| 451+ | 0.16 EUR |
| 677+ | 0.11 EUR |
| TS9015CX5 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1V
Output voltage: 0.9...7V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...7V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1V
Output voltage: 0.9...7V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2907A RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS12L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| US1M M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Reverse recovery time: 75ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 230+ | 0.31 EUR |
| TS4148 RAG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 1206
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 1206
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 9625 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 926+ | 0.077 EUR |
| 1042+ | 0.069 EUR |
| 1413+ | 0.051 EUR |
| 1629+ | 0.044 EUR |
| 1977+ | 0.036 EUR |
| 2305+ | 0.031 EUR |
| 2718+ | 0.026 EUR |
| 5000+ | 0.017 EUR |
| UF4007 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |





















