Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66401) > Seite 1089 nach 1107
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HER307G | Taiwan Semiconductor |
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TS19721ACS RLG | Taiwan Semiconductor |
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1.5KE43A | Taiwan Semiconductor |
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BZY55B36 RYG | Taiwan Semiconductor |
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BZY55B3V6 RYG | Taiwan Semiconductor |
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BZY55B4V7 RYG | Taiwan Semiconductor |
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BZY55B5V1 RYG | Taiwan Semiconductor |
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BZY55B18 RYG | Taiwan Semiconductor |
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BZY55B20 RYG | Taiwan Semiconductor |
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BZY55B24 RYG | Taiwan Semiconductor |
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BZY55B27 RYG | Taiwan Semiconductor |
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BZY55B2V7 RYG | Taiwan Semiconductor |
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SMAJ43AHM2G | Taiwan Semiconductor |
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SMAJ43A M2G | Taiwan Semiconductor |
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SMAJ43A M2 | Taiwan Semiconductor |
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SMAJ43A | Taiwan Semiconductor |
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SMAJ43A R3G | Taiwan Semiconductor |
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SMAJ43AHR3G | Taiwan Semiconductor |
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BC548C B1G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 420...800 Mounting: THT Kind of package: bulk Pulsed collector current: 0.2A |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM850N06CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.3A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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RMB6S | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE100CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 137V Breakdown voltage: 100V Max. forward impulse current: 11.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Tolerance: ±5% |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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TSS54U RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Mounting: SMD Case: 0603 Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.3A Kind of package: reel; tape Type of diode: Schottky switching |
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TSM60N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
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TSM60N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
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TSM60N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement |
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MBR20100CT C0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.75V Max. load current: 20A |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SS16 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16L R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT3906 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 1840 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOP8 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOT23 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
Produkt ist nicht verfügbar |
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RS1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel; tape |
auf Bestellung 5405 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Power dissipation: 0.5W Kind of package: Ammo Pack Type of diode: switching Case: DO35 Mounting: THT Capacitance: 4pF Max. off-state voltage: 100V Max. load current: 0.45A Max. forward voltage: 1V Load current: 0.15A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching Case: DO35 Mounting: THT Capacitance: 4pF Max. off-state voltage: 100V Max. forward voltage: 1V Load current: 0.15A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A |
auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2222A RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2N7002KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 910pC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SK36A R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE27A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Max. off-state voltage: 37.5V Breakdown voltage: 27.1V Max. forward impulse current: 42A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5822 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 70A Kind of package: tape Capacitance: 200pF |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C3V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 2µA |
auf Bestellung 1653 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5819 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Capacitance: 55pF Max. off-state voltage: 40V Max. forward voltage: 0.6V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: tape Type of diode: Schottky rectifying Mounting: THT Case: DO41 |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE15CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C12 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 12V; 20mA; reel,tape; DO41; single diode Type of diode: Zener Case: DO41 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 12V Zener current: 20mA Leakage current: 0.5µA Power dissipation: 1.3W Kind of package: reel; tape Mounting: THT |
auf Bestellung 647 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C5V1 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 5.1V; 45mA; reel,tape; DO41; single diode Type of diode: Zener Case: DO41 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 5.1V Zener current: 45mA Leakage current: 1µA Power dissipation: 1.3W Kind of package: reel; tape Mounting: THT |
auf Bestellung 1106 Stücke: Lieferzeit 14-21 Tag (e) |
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TS9015CX5 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1V Output voltage: 0.9...7V Output current: 0.3A Case: SOT23-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...7V |
Produkt ist nicht verfügbar |
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BZX55C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2907A RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23-3 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
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SS12L R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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US1M M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Max. forward voltage: 1.7V |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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TS4148 RAG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: 1206 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.5W |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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TS4148 RYG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 0805; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: 0805 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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UF4007 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Capacitance: 17pF |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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HER307G |
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Hersteller: Taiwan Semiconductor
Diode Switching 800V 3A 2-Pin DO-201AD T/R
Diode Switching 800V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TS19721ACS RLG |
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Hersteller: Taiwan Semiconductor
LED Driver 2600uA SupplyCurrent 8-Pin SOP
LED Driver 2600uA SupplyCurrent 8-Pin SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE43A |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B36 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B3V6 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B4V7 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B5V1 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B18 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B20 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B24 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZY55B27 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
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BZY55B2V7 RYG |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43AHM2G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43A M2G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43A M2 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43A |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43A R3G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ43AHR3G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC548C B1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
675+ | 0.11 EUR |
TSM850N06CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
RMB6S |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
1.5KE100CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
TSS54U RGG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM60N600CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM60N600CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM60N600CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR20100CT C0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM10N80CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM10N80CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS16 M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SS16L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
BZX55C12 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BZX55C12 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
562+ | 0.13 EUR |
890+ | 0.08 EUR |
1310+ | 0.05 EUR |
MMBT3906 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
589+ | 0.12 EUR |
1000+ | 0.07 EUR |
1433+ | 0.05 EUR |
1840+ | 0.04 EUR |
TS78L09CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
104+ | 0.69 EUR |
TS78L09CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
152+ | 0.47 EUR |
LL4148 L0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
auf Bestellung 5405 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
848+ | 0.08 EUR |
1296+ | 0.06 EUR |
2119+ | 0.03 EUR |
2243+ | 0.03 EUR |
LL4148 L1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4448 A0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Power dissipation: 0.5W
Kind of package: Ammo Pack
Type of diode: switching
Case: DO35
Mounting: THT
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.15A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Power dissipation: 0.5W
Kind of package: Ammo Pack
Type of diode: switching
Case: DO35
Mounting: THT
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.15A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
165+ | 0.43 EUR |
1N4448 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Case: DO35
Mounting: THT
Capacitance: 4pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.15A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Case: DO35
Mounting: THT
Capacitance: 4pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.15A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
313+ | 0.23 EUR |
350+ | 0.20 EUR |
528+ | 0.14 EUR |
588+ | 0.12 EUR |
1053+ | 0.07 EUR |
1169+ | 0.06 EUR |
2620+ | 0.03 EUR |
MMBT2222A RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
486+ | 0.15 EUR |
676+ | 0.11 EUR |
783+ | 0.09 EUR |
1499+ | 0.05 EUR |
TSM2N7002KCX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SK36A R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.90 EUR |
141+ | 0.51 EUR |
205+ | 0.35 EUR |
304+ | 0.24 EUR |
325+ | 0.21 EUR |
1.5KE27A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
1N5822 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
1.5KE400A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
107+ | 0.67 EUR |
132+ | 0.54 EUR |
BZX55C3V6 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
auf Bestellung 1653 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
481+ | 0.15 EUR |
749+ | 0.10 EUR |
1013+ | 0.07 EUR |
1330+ | 0.05 EUR |
1493+ | 0.05 EUR |
1653+ | 0.04 EUR |
1N5819 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Capacitance: 55pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Capacitance: 55pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P6KE15CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
BZX85C12 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; reel,tape; DO41; single diode
Type of diode: Zener
Case: DO41
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 20mA
Leakage current: 0.5µA
Power dissipation: 1.3W
Kind of package: reel; tape
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; reel,tape; DO41; single diode
Type of diode: Zener
Case: DO41
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 20mA
Leakage current: 0.5µA
Power dissipation: 1.3W
Kind of package: reel; tape
Mounting: THT
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
307+ | 0.23 EUR |
365+ | 0.20 EUR |
554+ | 0.13 EUR |
647+ | 0.11 EUR |
BZX85C5V1 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Case: DO41
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 5.1V
Zener current: 45mA
Leakage current: 1µA
Power dissipation: 1.3W
Kind of package: reel; tape
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Case: DO41
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 5.1V
Zener current: 45mA
Leakage current: 1µA
Power dissipation: 1.3W
Kind of package: reel; tape
Mounting: THT
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
230+ | 0.31 EUR |
403+ | 0.18 EUR |
873+ | 0.08 EUR |
923+ | 0.08 EUR |
TS9015CX5 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1V
Output voltage: 0.9...7V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...7V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1V
Output voltage: 0.9...7V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX55C8V2 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1140+ | 0.06 EUR |
1300+ | 0.05 EUR |
MMBT2907A RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS12L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
US1M M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
260+ | 0.27 EUR |
TS4148 RAG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 1206
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 1206; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 1206
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.12 EUR |
TS4148 RYG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 0805; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 0805
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; 0805; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: 0805
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
UF4007 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
104+ | 0.69 EUR |