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SMCJ43A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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ES1B ES1B TAIWAN SEMICONDUCTOR ES1D-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 1A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 4530 Stücke:
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233+0.37 EUR
418+0.2 EUR
605+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
2500+0.11 EUR
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ES1BAL ES1BAL TAIWAN SEMICONDUCTOR ES1BAL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES1BL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; subSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Case: subSMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
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ES1BALH TAIWAN SEMICONDUCTOR ES1BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES1BFS TAIWAN SEMICONDUCTOR ES1BFS SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES1BFSH TAIWAN SEMICONDUCTOR ES1BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES1BH TAIWAN SEMICONDUCTOR ES1AH SERIES_B2112.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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ES1CL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; subSMA; Ufmax: 950mV
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Case: subSMA
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 1A
auf Bestellung 10000 Stücke:
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SMCJ30CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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BC847CW RFG BC847CW RFG TAIWAN SEMICONDUCTOR BC846AW SERIES_C2102.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 100MHz
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TESDL5V0B45P1M3 RWG TESDL5V0B45P1M3 RWG TAIWAN SEMICONDUCTOR TESDL5V0B45P1M3_A2110.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷9.5V; 12A; 130W; bidirectional; ESD; SOD323
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
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TS40P07G TAIWAN SEMICONDUCTOR TS40P07G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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TS50P07G TAIWAN SEMICONDUCTOR TS50P07G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZT52C6V2 RHG BZT52C6V2 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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1.5SMC39CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC39CAH TAIWAN SEMICONDUCTOR 1.5SMCH SERIES_B2207.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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MBRS1045CT TAIWAN SEMICONDUCTOR MBRS1035CT%20SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
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MBRAD1045H TAIWAN SEMICONDUCTOR MBRAD1045H_A2302.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
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MBRAD1045DH TAIWAN SEMICONDUCTOR MBRAD1045DH_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
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SMF43A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_smf_datasheet.pdf.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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MURF1640CTH TAIWAN SEMICONDUCTOR MURF1620CT SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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MURF8L60H TAIWAN SEMICONDUCTOR MURF8L60_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
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BYG20D TAIWAN SEMICONDUCTOR BYG20D SERIES_F2102.pdf byg20d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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BYG20DH TAIWAN SEMICONDUCTOR BYG20DH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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SMCJ18CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ13A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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ES3FH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TSM2314CX RFG TSM2314CX RFG TAIWAN SEMICONDUCTOR TSM2314_E15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
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74+1.15 EUR
109+0.79 EUR
154+0.56 EUR
177+0.48 EUR
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MBRAD20200H TAIWAN SEMICONDUCTOR MBRAD20200H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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P6SMB24A P6SMB24A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 4249 Stücke:
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625+0.13 EUR
705+0.12 EUR
778+0.11 EUR
841+0.1 EUR
881+0.096 EUR
1000+0.087 EUR
3000+0.086 EUR
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P6SMB24CA M4G P6SMB24CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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P6SMB6.8CA P6SMB6.8CA TAIWAN SEMICONDUCTOR P6SMB.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
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P6SMB6.8A P6SMB6.8A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P6SMB
Max. off-state voltage: 5.8V
Leakage current: 2mA
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Peak pulse power dissipation: 0.6kW
auf Bestellung 345 Stücke:
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114+0.75 EUR
181+0.48 EUR
283+0.3 EUR
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BZW06-33 BZW06-33 TAIWAN SEMICONDUCTOR BZW06_SER.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
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BZW06-33 TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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BZW06-33B R0 BZW06-33B R0 TAIWAN SEMICONDUCTOR BZW06-33B-R0.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
auf Bestellung 545 Stücke:
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256+0.33 EUR
317+0.27 EUR
360+0.24 EUR
500+0.23 EUR
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BZW06-33B TAIWAN SEMICONDUCTOR cd00000694.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
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BZW06-13B BZW06-13B TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
auf Bestellung 209 Stücke:
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117+0.73 EUR
128+0.67 EUR
185+0.46 EUR
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SS215 TAIWAN SEMICONDUCTOR SS22 SERIES_N2306.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
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BZX55C4V3 R0G BZX55C4V3 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 803 Stücke:
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358+0.24 EUR
496+0.17 EUR
803+0.11 EUR
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TSCDT20065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT20065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SFF508GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
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TQM138KCU RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S10MCH TAIWAN SEMICONDUCTOR S10GCH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UG54GSH TAIWAN SEMICONDUCTOR UG54GS_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Produkt ist nicht verfügbar
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TUAS8K TAIWAN SEMICONDUCTOR TUAS8D SERIES_C2109.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TUAS8KH TAIWAN SEMICONDUCTOR TUAS8DH%20SERIES_A2111.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMA6J30AH TAIWAN SEMICONDUCTOR SMA6J%20SERIES_E2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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TSM60NE069PW C0G TAIWAN SEMICONDUCTOR TSM60NE069PW_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMAJ75AH SMAJ75AH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMA4F60AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52B12-G RHG BZT52B12-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
440+0.19 EUR
805+0.11 EUR
1010+0.084 EUR
1060+0.081 EUR
Mindestbestellmenge: 440 Stücke
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SFF505GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
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SFS1605GH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UR4KB60-B TAIWAN SEMICONDUCTOR UR4KB100-B_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
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TSM60NE069CIT C0G TAIWAN SEMICONDUCTOR TSM60NE069CIT_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TQM138KCX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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HS5JH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ43A SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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ES1B ES1D-D.PDF
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 1A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 4530 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
233+0.37 EUR
418+0.2 EUR
605+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
2500+0.11 EUR
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ES1BAL ES1BAL SERIES_C2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES1BL ES1AL SERIES_L2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; subSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Case: subSMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
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ES1BALH ES1BALH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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ES1BFS ES1BFS SERIES_C2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES1BFSH ES1BFSH SERIES_B2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES1BH ES1AH SERIES_B2112.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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ES1CL ES1AL SERIES_L2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; subSMA; Ufmax: 950mV
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Case: subSMA
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 1A
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10000+0.18 EUR
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SMCJ30CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30CAH SMCJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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BC847CW RFG BC846AW SERIES_C2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 100MHz
auf Bestellung 87000 Stücke:
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3000+0.044 EUR
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TESDL5V0B45P1M3 RWG TESDL5V0B45P1M3_A2110.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷9.5V; 12A; 130W; bidirectional; ESD; SOD323
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
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48+1.77 EUR
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TS40P07G TS40P07G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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TS50P07G TS50P07G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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BZT52C6V2 RHG BZT52C2V4 SERIES_G1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
465+0.19 EUR
Mindestbestellmenge: 465 Stücke
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1.5SMC39CA littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
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1.5SMC39CAH 1.5SMCH SERIES_B2207.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Produkt ist nicht verfügbar
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MBRS1045CT MBRS1035CT%20SERIES_M2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
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MBRAD1045H MBRAD1045H_A2302.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBRAD1045DH MBRAD1045DH_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMF43A littelfuse_tvs_diode_smf_datasheet.pdf.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MURF1640CTH MURF1620CT SERIES_K2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
Produkt ist nicht verfügbar
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MURF8L60H MURF8L60_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
Produkt ist nicht verfügbar
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BYG20D BYG20D SERIES_F2102.pdf byg20d.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYG20DH BYG20DH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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SMCJ18CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ13A SMBJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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ES3FH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TSM2314CX RFG TSM2314_E15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
109+0.79 EUR
154+0.56 EUR
177+0.48 EUR
Mindestbestellmenge: 74 Stücke
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MBRAD20200H MBRAD20200H_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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P6SMB24A P6SMB_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 4249 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
705+0.12 EUR
778+0.11 EUR
841+0.1 EUR
881+0.096 EUR
1000+0.087 EUR
3000+0.086 EUR
Mindestbestellmenge: 625 Stücke
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P6SMB24CA M4G P6SMB_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
90+0.95 EUR
Mindestbestellmenge: 90 Stücke
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P6SMB6.8CA description P6SMB.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
258+0.32 EUR
Mindestbestellmenge: 258 Stücke
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P6SMB6.8A description P6SMB_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P6SMB
Max. off-state voltage: 5.8V
Leakage current: 2mA
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Peak pulse power dissipation: 0.6kW
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
114+0.75 EUR
181+0.48 EUR
283+0.3 EUR
Mindestbestellmenge: 114 Stücke
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BZW06-33 BZW06_SER.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
Produkt ist nicht verfügbar
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BZW06-33 bzw065v8.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
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BZW06-33B R0 BZW06-33B-R0.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
256+0.33 EUR
317+0.27 EUR
360+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 256 Stücke
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BZW06-33B cd00000694.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
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BZW06-13B bzw065v8.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
117+0.73 EUR
128+0.67 EUR
185+0.46 EUR
Mindestbestellmenge: 97 Stücke
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SS215 SS22 SERIES_N2306.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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BZX55C4V3 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
496+0.17 EUR
803+0.11 EUR
Mindestbestellmenge: 358 Stücke
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TSCDT20065G1 pdf.php?pn=TSCDT20065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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SFF508GH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
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TQM138KCU RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S10MCH S10GCH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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UG54GSH UG54GS_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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TUAS8K TUAS8D SERIES_C2109.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TUAS8KH TUAS8DH%20SERIES_A2111.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMA6J30AH SMA6J%20SERIES_E2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMAJ75AH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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SMA4F60AH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
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Mindestbestellmenge: 5 Stücke
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BZT52B12-G RHG BZT52B2V4-G SERIES_H2002.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
440+0.19 EUR
805+0.11 EUR
1010+0.084 EUR
1060+0.081 EUR
Mindestbestellmenge: 440 Stücke
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SFF505GH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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SFS1605GH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
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UR4KB60-B UR4KB100-B_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TQM138KCX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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HS5JH
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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