Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (49610) > Seite 827 nach 827
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| SMBJ13A | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 29A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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| ES3FH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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TSM2314CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Kind of package: tape Polarisation: unipolar Gate charge: 14nC On-state resistance: 33mΩ Power dissipation: 0.8W Drain current: 4.9A Gate-source voltage: ±12V Drain-source voltage: 20V |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRAD20200H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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P6SMB24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 4279 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB24CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB6.8CA | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 318 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Capacitance: 10pF Features of semiconductor devices: glass passivated |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB6.8A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW06-33 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 33V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO204AC Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: BZW06 |
Produkt ist nicht verfügbar |
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| BZW06-33 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 |
Produkt ist nicht verfügbar |
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BZW06-33B R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO204AC Mounting: THT Leakage current: 1µA |
auf Bestellung 545 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZW06-33B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 |
Produkt ist nicht verfügbar |
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BZW06-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Max. forward impulse current: 28A |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS215 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.95V Type of diode: Schottky rectifying Kind of package: reel; tape Load current: 2A Max. off-state voltage: 150V Case: SMB Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZX55C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
auf Bestellung 803 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSCDT20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
Produkt ist nicht verfügbar |
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| SFF508GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 2.5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 5A Reverse recovery time: 35ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| TQM138KCU RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| S10MCH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 10A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| UG54GSH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 65A Case: DO15; DO204AC Max. forward voltage: 1.1V Reverse recovery time: 20ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| TUAS8K | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277A Max. forward voltage: 1.1V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TUAS8KH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277A Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMA6J30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Manufacturer series: SMA6J |
Produkt ist nicht verfügbar |
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| TSM60NE069PW C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SMAJ75AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMA4F60AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 67.1...74.1V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Manufacturer series: SMA4F Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZT52B12-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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| SFF505GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 2.5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 5A Reverse recovery time: 35ns Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFS1605GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: D2PAK Max. forward voltage: 1.3V Max. load current: 16A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| UR4KB60-B | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 135A Version: flat Case: D3K Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
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| TSM60NE069CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 89W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TQM138KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| HS5JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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TESD5V0V4UCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4 Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 6A Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Leakage current: 3µA Number of channels: 4 Application: Ethernet; USB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| GBPC3506 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| GBPC3506W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| ABS6 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V Max. forward impulse current: 30A Case: ABS Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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ABS6 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V Max. forward impulse current: 30A Case: ABS Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSP15U50S | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape Case: TO277A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.56V Load current: 15A Max. off-state voltage: 50V Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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TS2940CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD Manufacturer series: TS2940 Case: SOT223 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 10...26V Output current: 0.8A Tolerance: ±2% Voltage drop: 0.8V Number of channels: 1 Output voltage: 5V Mounting: SMD |
auf Bestellung 887 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CP33 ROG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2% Manufacturer series: TS2940 Case: DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 0...26V Output current: 1A Tolerance: ±0.2% Voltage drop: 0.6V Number of channels: 1 Output voltage: 3.3V Mounting: SMD |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Manufacturer series: TS2940 Case: SOT223 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 8.3...26V Output current: 0.8A Tolerance: ±2% Voltage drop: 0.8V Number of channels: 1 Output voltage: 3.3V Mounting: SMD |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Kind of package: tube Manufacturer series: TS2940 Case: TO220 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 8.3...26V Output current: 0.8A Tolerance: ±2% Voltage drop: 0.8V Number of channels: 1 Output voltage: 3.3V Mounting: THT |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube Kind of package: tube Manufacturer series: TS2940 Case: TO220 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 10...26V Output current: 0.8A Tolerance: ±2% Voltage drop: 0.8V Number of channels: 1 Output voltage: 5V Mounting: THT |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Manufacturer series: TS2940 Case: D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Input voltage: 10...26V Output current: 0.8A Tolerance: ±2% Voltage drop: 0.8V Number of channels: 1 Output voltage: 5V Mounting: SMD |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2N7002AKCU RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 298mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TSM2N7002AKDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.24W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BAS316WS RRG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Case: SOD323F Max. forward voltage: 1.25V Max. forward impulse current: 4A |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SMBJ13A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES3FH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM2314CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 109+ | 0.66 EUR |
| 154+ | 0.47 EUR |
| 177+ | 0.4 EUR |
| MBRAD20200H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB24A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 4279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 778+ | 0.092 EUR |
| 841+ | 0.085 EUR |
| 881+ | 0.081 EUR |
| 1000+ | 0.073 EUR |
| 3000+ | 0.072 EUR |
| P6SMB24CA M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| P6SMB6.8CA | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 318+ | 0.23 EUR |
| 1N4007G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 128+ | 0.56 EUR |
| P6SMB6.8A | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 181+ | 0.4 EUR |
| 283+ | 0.25 EUR |
| BZW06-33 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-33 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-33B R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 256+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 360+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| BZW06-33B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-13B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 117+ | 0.61 EUR |
| 128+ | 0.56 EUR |
| 185+ | 0.39 EUR |
| SS215 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C4V3 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 496+ | 0.14 EUR |
| 803+ | 0.089 EUR |
| TSCDT20065G1 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFF508GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TQM138KCU RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S10MCH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UG54GSH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TUAS8K |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
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| TUAS8KH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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| SMA6J30AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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| TSM60NE069PW C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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| SMAJ75AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
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| SMA4F60AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
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| BZT52B12-G RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 440+ | 0.16 EUR |
| 805+ | 0.089 EUR |
| 1010+ | 0.071 EUR |
| 1045+ | 0.068 EUR |
| SFF505GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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| SFS1605GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| UR4KB60-B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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| TSM60NE069CIT C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| TQM138KCX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| HS5JH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TESD5V0V4UCU6 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| GBPC3506 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| GBPC3506W |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ABS6 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ABS6 RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| TSP15U50S |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS2940CW50 RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.64 EUR |
| TS2940CP33 ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Case: DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 0...26V
Output current: 1A
Tolerance: ±0.2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Case: DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 0...26V
Output current: 1A
Tolerance: ±0.2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 65+ | 1.12 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.9 EUR |
| TS2940CW33 RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 94+ | 0.76 EUR |
| 104+ | 0.69 EUR |
| 112+ | 0.64 EUR |
| 118+ | 0.61 EUR |
| 250+ | 0.58 EUR |
| TS2940CZ33 C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: THT
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: THT
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.37 EUR |
| 34+ | 2.14 EUR |
| 38+ | 1.9 EUR |
| TS2940CZ50 C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: THT
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: THT
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 36+ | 2.02 EUR |
| 42+ | 1.72 EUR |
| TS2940CM50 RNG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Case: D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Case: D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.39 EUR |
| 33+ | 2.2 EUR |
| 39+ | 1.86 EUR |
| TSM2N7002AKCU RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM2N7002AKDCU6 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS316WS RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.036 EUR |