Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (50361) > Seite 828 nach 840
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BC847CW RFG | TAIWAN SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Frequency: 100MHz |
auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TESDL5V0B45P1M3 RWG | TAIWAN SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.5÷9.5V; 12A; 130W; bidirectional; ESD; SOD323 Type of diode: TVS array Peak pulse power dissipation: 0.13kW Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Version: ESD Leakage current: 0.1µA Number of channels: 1 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| TS40P07G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 40A Max. forward impulse current: 0.4kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| TS50P07G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 50A Max. forward impulse current: 0.4kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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BZT52C6V2 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5SMC39CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
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1.5SMC39CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry |
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MBRS1045CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2 Max. forward voltage: 0.8V Max. off-state voltage: 45V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying Mounting: SMD |
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| MBRAD1045H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape Application: automotive industry |
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| MBRAD1045DH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Kind of package: reel; tape Application: automotive industry |
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| SMF43A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
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| MURF1640CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Reverse recovery time: 50ns Application: automotive industry Max. load current: 16A |
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| MURF8L60H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Reverse recovery time: 65ns Application: automotive industry |
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BYG20D | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape |
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BYG20DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape Application: automotive industry |
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SMCJ18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 53A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ13A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 29A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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| ES3FH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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TSM2314CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Kind of package: tape Polarisation: unipolar Gate charge: 14nC On-state resistance: 33mΩ Power dissipation: 0.8W Drain current: 4.9A Gate-source voltage: ±12V Drain-source voltage: 20V |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRAD20200H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
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P6SMB24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMB Kind of package: reel; tape |
auf Bestellung 3719 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB24CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMB6.8CA | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Manufacturer series: P6SMB Kind of package: reel; tape |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMB6.8A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZW06-33 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 Max. forward impulse current: 11.1A |
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BZW06-33B R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO204AC Mounting: THT Leakage current: 1µA Max. forward impulse current: 11.1A |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BZW06-33B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 Max. forward impulse current: 11.1A |
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BZW06-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Max. forward impulse current: 28A |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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SS215 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX55C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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TSCDT20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| SFF508GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 2.5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 5A Reverse recovery time: 35ns Application: automotive industry |
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| TQM138KCU RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: tape Kind of channel: enhancement |
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| S10MCH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape Max. forward voltage: 1.1V Application: automotive industry Max. off-state voltage: 1kV Load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: rectifying Mounting: SMD |
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| UG54GSH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 65A Case: DO15; DO204AC Max. forward voltage: 1.1V Reverse recovery time: 20ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TUAS8K | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277A Max. forward voltage: 1.1V Kind of package: reel; tape |
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| TUAS8KH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277A Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
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| SMA6J30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Manufacturer series: SMA6J |
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| TSM60NE069PW C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
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SMAJ75AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
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| SMA4F60AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 67.1...74.1V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Manufacturer series: SMA4F Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BZT52B12-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SFF505GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 2.5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 5A Reverse recovery time: 35ns Application: automotive industry |
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| SFS1605GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: D2PAK Max. forward voltage: 1.3V Max. load current: 16A Kind of package: reel; tape Application: automotive industry |
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| UR4KB60-B | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 135A Version: flat Case: D3K Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V |
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| TSM60NE069CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 89W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement |
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| TQM138KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: tape Kind of channel: enhancement |
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| HS5JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
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TESD5V0V4UCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4 Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 6A Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Leakage current: 3µA Number of channels: 4 Application: Ethernet; USB Kind of package: reel; tape |
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| GBPC3506 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
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| GBPC3506W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| ABS6 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Features of semiconductor devices: glass passivated Max. off-state voltage: 0.6kV Electrical mounting: SMT Load current: 1A Kind of package: reel; tape Case: ABS Type of bridge rectifier: single-phase Max. forward impulse current: 30A Max. forward voltage: 0.95V |
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ABS6 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS Features of semiconductor devices: glass passivated Max. off-state voltage: 0.6kV Electrical mounting: SMT Load current: 1A Kind of package: reel; tape Case: ABS Type of bridge rectifier: single-phase Max. forward impulse current: 30A Max. forward voltage: 0.95V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TSP15U50S | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape Case: TO277A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.56V Load current: 15A Max. off-state voltage: 50V Semiconductor structure: single diode |
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TS2940CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: SMD Case: SOT223 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Input voltage: 10...26V Output current: 0.8A Voltage drop: 0.8V Output voltage: 5V Number of channels: 1 |
auf Bestellung 542 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: SMD Case: SOT223 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Input voltage: 8.3...26V Output current: 0.8A Voltage drop: 0.8V Output voltage: 3.3V Number of channels: 1 |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: THT Case: TO220 Operating temperature: -40...125°C Kind of package: tube Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Input voltage: 8.3...26V Output current: 0.8A Voltage drop: 0.8V Output voltage: 3.3V Number of channels: 1 |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: THT Case: TO220 Operating temperature: -40...125°C Kind of package: tube Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Input voltage: 10...26V Output current: 0.8A Voltage drop: 0.8V Output voltage: 5V Number of channels: 1 |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Type of integrated circuit: voltage regulator Tolerance: ±2% Mounting: SMD Case: D2PAK Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Input voltage: 10...26V Output current: 0.8A Voltage drop: 0.8V Output voltage: 5V Number of channels: 1 |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2N7002AKCU RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 298mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
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| BC847CW RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 100MHz
auf Bestellung 87000 Stücke:
Lieferzeit 14-21 Tag (e)
| TESDL5V0B45P1M3 RWG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷9.5V; 12A; 130W; bidirectional; ESD; SOD323
Type of diode: TVS array
Peak pulse power dissipation: 0.13kW
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷9.5V; 12A; 130W; bidirectional; ESD; SOD323
Type of diode: TVS array
Peak pulse power dissipation: 0.13kW
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Number of channels: 1
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| TS40P07G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| TS50P07G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| BZT52C6V2 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5SMC39CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC39CAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 37.1V; 29A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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| MBRS1045CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Max. forward voltage: 0.8V
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Max. forward voltage: 0.8V
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
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| MBRAD1045H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
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| MBRAD1045DH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
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| SMF43A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| MURF1640CTH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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| MURF8L60H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
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| BYG20D |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
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| BYG20DH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
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| SMCJ18CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBJ13A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| ES3FH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| TSM2314CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRAD20200H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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Im Einkaufswagen
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| P6SMB24A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMB
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMB
Kind of package: reel; tape
auf Bestellung 3719 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMB24CA M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMB6.8CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Manufacturer series: P6SMB
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Manufacturer series: P6SMB
Kind of package: reel; tape
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMB6.8A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| BZW06-33 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Max. forward impulse current: 11.1A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Max. forward impulse current: 11.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW06-33B R0 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 11.1A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 11.1A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
| BZW06-33B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Max. forward impulse current: 11.1A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Max. forward impulse current: 11.1A
Produkt ist nicht verfügbar
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| BZW06-13B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
| SS215 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C4V3 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
| TSCDT20065G1 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SFF508GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TQM138KCU RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S10MCH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UG54GSH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TUAS8K |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TUAS8KH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMA6J30AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60NE069PW C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ75AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMA4F60AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZT52B12-G RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
| SFF505GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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| SFS1605GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
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| UR4KB60-B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
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| TSM60NE069CIT C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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| TQM138KCX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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| HS5JH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| TESD5V0V4UCU6 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
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| GBPC3506 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC3506W |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| ABS6 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Max. forward voltage: 0.95V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Max. forward voltage: 0.95V
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| ABS6 RGG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Max. forward voltage: 0.95V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Max. forward voltage: 0.95V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| TSP15U50S |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
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| TS2940CW50 RPG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
auf Bestellung 542 Stücke:
Lieferzeit 14-21 Tag (e)
| TS2940CW33 RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 8.3...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 3.3V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 8.3...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 3.3V
Number of channels: 1
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
| TS2940CZ33 C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: THT
Case: TO220
Operating temperature: -40...125°C
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 8.3...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 3.3V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: THT
Case: TO220
Operating temperature: -40...125°C
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 8.3...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 3.3V
Number of channels: 1
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| TS2940CZ50 C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: THT
Case: TO220
Operating temperature: -40...125°C
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: THT
Case: TO220
Operating temperature: -40...125°C
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| TS2940CM50 RNG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: D2PAK
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: D2PAK
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Input voltage: 10...26V
Output current: 0.8A
Voltage drop: 0.8V
Output voltage: 5V
Number of channels: 1
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| TSM2N7002AKCU RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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