Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (49683) > Seite 829 nach 829
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| HDBL105G | TAIWAN SEMICONDUCTOR |
 Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Version: DIP Case: DBL Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.7V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 33mΩ Mounting: SMD Gate charge: 14nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
| HDBL105G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM2312CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |