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P4SMA27A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA27AH TAIWAN SEMICONDUCTOR P4SMAH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR BZX55C10-R0.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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496+0.17 EUR
564+0.15 EUR
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MBR20H100CT TAIWAN SEMICONDUCTOR MBR20H100CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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BZX85C36 R0G BZX85C36 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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BZT52C36 RHG BZT52C36 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123F; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Zener voltage: 36V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
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SMAJ64A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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TSM2323CX RFG TSM2323CX RFG TAIWAN SEMICONDUCTOR TSM2323_F15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
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74+1.17 EUR
117+0.73 EUR
119+0.71 EUR
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BZX85C13 R0G BZX85C13 R0G TAIWAN SEMICONDUCTOR BZX85C3V3%20SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; tape
Tolerance: ±5%
Mounting: THT
Power dissipation: 1.3W
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Zener voltage: 13V
Type of diode: Zener
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264+0.32 EUR
477+0.18 EUR
723+0.12 EUR
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TSM090N03CP ROG TSM090N03CP ROG TAIWAN SEMICONDUCTOR TSM090N03CP_B1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhancement
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MBR745 MBR745 TAIWAN SEMICONDUCTOR MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
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SMAJ100CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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BZT52B10S RRG BZT52B10S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S%20series_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323F; reel,tape; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
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DBL156G TAIWAN SEMICONDUCTOR DBL151G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
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BZS55C12 RAG BZS55C12 RAG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
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DBL157G TAIWAN SEMICONDUCTOR DBL151G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
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1KSMB30A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1ksmb_datasheet.pdf?assetguid=0f4270b9-cf6a-4a93-9359-922a13265558 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
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1KSMB30AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
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SMF36A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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P4SMA10CA TAIWAN SEMICONDUCTOR P4SMA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 29A
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Peak pulse power dissipation: 0.4kW
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P4SMA100CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf P4SMA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 3A
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
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P4SMA10A P4SMA10A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 SMAP4SMA10AS0A.pdf P4SMA SERIES_S2102.pdf P4SMA.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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SMDJ36AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
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5.0SMDJ36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
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TESDU24V RGG TESDU24V RGG TAIWAN SEMICONDUCTOR TESDUxx.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 47W
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TSZU52C4V3 RGG TAIWAN SEMICONDUCTOR TSZU52C2V0%20SERIES_F1601.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
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TSZU52C4V7 RGG TAIWAN SEMICONDUCTOR TSZU52C2V0 SERIES_G2009.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
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DBL205G TAIWAN SEMICONDUCTOR DBL201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
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TSM048NB06LCR RLG TSM048NB06LCR RLG TAIWAN SEMICONDUCTOR TSM048NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 105nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
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27+3.21 EUR
30+2.89 EUR
32+2.65 EUR
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SMAJ170A TAIWAN SEMICONDUCTOR SMAJ.pdf SMAJ SERIES_U2102.pdf view?usp=sharing SMAJ%20Series%20Rev-1.pdf SMAJ170A00S0SR.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ170A%20SMA.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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SMAJ170CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf smaj%20series(400w,5v_440v).pdf SMAJ%20SERIES%20N0223%20REV.B.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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GBL10 TAIWAN SEMICONDUCTOR GBL005 SERIES_K2103.pdf gbl10.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
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GBL10 TAIWAN SEMICONDUCTOR GBL005 SERIES_K2103.pdf gbl10.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
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MBR2545CT MBR2545CT TAIWAN SEMICONDUCTOR MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Kind of package: tube
Max. forward impulse current: 200A
Max. load current: 25A
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33+2.64 EUR
35+2.45 EUR
38+2.28 EUR
43+1.99 EUR
50+1.75 EUR
100+1.54 EUR
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SMBJ60CA SMBJ60CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BAV103 L0G BAV103 L0G TAIWAN SEMICONDUCTOR BAV101 SERIES_E2301.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50ns; MiniMELF,SOD80; 1V; 4A
Type of diode: switching
Mounting: SMD
Reverse recovery time: 50ns
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 4A
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DBL106G TAIWAN SEMICONDUCTOR DBL101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
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MBRAD8150H TAIWAN SEMICONDUCTOR MBRAD8150H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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GBPC2501 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: in-tray
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
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DBL105G TAIWAN SEMICONDUCTOR DBL101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
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HDBL105G TAIWAN SEMICONDUCTOR HDBL101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
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TSM2312CX RFG TSM2312CX RFG TAIWAN SEMICONDUCTOR TSM2312_E15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
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GP1604H GP1604H TAIWAN SEMICONDUCTOR GP1601 SERIES_G2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
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UF1JLWH TAIWAN SEMICONDUCTOR UF1DLWH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX85C3V9 R0G BZX85C3V9 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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SSL14 SSL14 TAIWAN SEMICONDUCTOR SSL12 SERIES_I2304.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SF3004PT SF3004PT TAIWAN SEMICONDUCTOR SF3001PT_ser.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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DBL155G TAIWAN SEMICONDUCTOR DBL151G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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SMCJ40A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ40AH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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SMBJ40A SMBJ40A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM043NB04CZ C0G TSM043NB04CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
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TSM043NB04LCZ C0G TSM043NB04LCZ C0G TAIWAN SEMICONDUCTOR TSM043NB04LCZ_A2008.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Produkt ist nicht verfügbar
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TSM045NB06CR RLG TAIWAN SEMICONDUCTOR TSM045NB06CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 5mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 104nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
Produkt ist nicht verfügbar
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BZX55B7V5 A0G BZX55B7V5 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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BZT52C7V5 RHG BZT52C7V5 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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BZX55B8V2 A0G BZX55B8V2 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
Produkt ist nicht verfügbar
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BZX55C8V2 R0G BZX55C8V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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675+0.13 EUR
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BZT52C8V2 RHG BZT52C8V2 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; reel,tape; single diode
Produkt ist nicht verfügbar
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P4SMA27A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA27AH P4SMAH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
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BZX55C2V7 R0 BZX55C10-R0.pdf
BZX55C2V7 R0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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200+0.43 EUR
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BZX55C2V7 R0G
BZX55C2V7 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 564 Stücke:
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358+0.24 EUR
496+0.17 EUR
564+0.15 EUR
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MBR20H100CT MBR20H100CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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BZX85C36 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C36 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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BZT52C36 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C36 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123F; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Zener voltage: 36V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
auf Bestellung 922 Stücke:
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SMAJ64A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
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58+1.48 EUR
74+1.17 EUR
117+0.73 EUR
119+0.71 EUR
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BZX85C13 R0G BZX85C3V3%20SERIES_H2301.pdf
BZX85C13 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; tape
Tolerance: ±5%
Mounting: THT
Power dissipation: 1.3W
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Zener voltage: 13V
Type of diode: Zener
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200+0.43 EUR
264+0.32 EUR
477+0.18 EUR
723+0.12 EUR
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TSM090N03CP ROG TSM090N03CP_B1807.pdf
TSM090N03CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR745 MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf
MBR745
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
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71+1.21 EUR
79+1.08 EUR
84+1.02 EUR
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SMAJ100CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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BZT52B10S RRG BZT52B2V4S%20series_G1804.pdf
BZT52B10S RRG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323F; reel,tape; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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DBL156G DBL151G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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BZS55C12 RAG
BZS55C12 RAG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
Produkt ist nicht verfügbar
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DBL157G DBL151G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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1KSMB30A littelfuse_tvs_diode_1ksmb_datasheet.pdf?assetguid=0f4270b9-cf6a-4a93-9359-922a13265558
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
Produkt ist nicht verfügbar
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1KSMB30AH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
Produkt ist nicht verfügbar
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SMF36A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P4SMA10CA P4SMA.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 29A
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Peak pulse power dissipation: 0.4kW
Produkt ist nicht verfügbar
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P4SMA100CA littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf P4SMA.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 3A
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Produkt ist nicht verfügbar
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P4SMA10A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 SMAP4SMA10AS0A.pdf P4SMA SERIES_S2102.pdf P4SMA.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf
P4SMA10A
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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SMDJ36AH
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
Produkt ist nicht verfügbar
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5.0SMDJ36A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Produkt ist nicht verfügbar
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TESDU24V RGG TESDUxx.pdf
TESDU24V RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 47W
Produkt ist nicht verfügbar
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TSZU52C4V3 RGG TSZU52C2V0%20SERIES_F1601.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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TSZU52C4V7 RGG TSZU52C2V0 SERIES_G2009.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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DBL205G DBL201G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 105nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.21 EUR
30+2.89 EUR
32+2.65 EUR
Mindestbestellmenge: 27 Stücke
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SMAJ170A SMAJ.pdf SMAJ SERIES_U2102.pdf view?usp=sharing SMAJ%20Series%20Rev-1.pdf SMAJ170A00S0SR.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ170A%20SMA.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMAJ170CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf smaj%20series(400w,5v_440v).pdf SMAJ%20SERIES%20N0223%20REV.B.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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GBL10 GBL005 SERIES_K2103.pdf gbl10.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Produkt ist nicht verfügbar
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GBL10 GBL005 SERIES_K2103.pdf gbl10.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
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MBR2545CT MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf
MBR2545CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Kind of package: tube
Max. forward impulse current: 200A
Max. load current: 25A
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.64 EUR
35+2.45 EUR
38+2.28 EUR
43+1.99 EUR
50+1.75 EUR
100+1.54 EUR
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SMBJ60CA SMBJ.pdf
SMBJ60CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BAV103 L0G BAV101 SERIES_E2301.pdf
BAV103 L0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 50ns; MiniMELF,SOD80; 1V; 4A
Type of diode: switching
Mounting: SMD
Reverse recovery time: 50ns
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 4A
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20000+0.044 EUR
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DBL106G DBL101G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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MBRAD8150H MBRAD8150H_A2303.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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GBPC2501 GBPC15_25_35_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: in-tray
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
Produkt ist nicht verfügbar
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DBL105G DBL101G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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HDBL105G HDBL101G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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TSM2312CX RFG TSM2312_E15.pdf
TSM2312CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.74 EUR
Mindestbestellmenge: 18 Stücke
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GP1604H GP1601 SERIES_G2104.pdf
GP1604H
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
Produkt ist nicht verfügbar
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UF1JLWH UF1DLWH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX85C3V9 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C3V9 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
335+0.25 EUR
Mindestbestellmenge: 335 Stücke
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SSL14 SSL12 SERIES_I2304.pdf
SSL14
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
235+0.36 EUR
Mindestbestellmenge: 228 Stücke
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SF3004PT SF3001PT_ser.pdf
SF3004PT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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DBL155G DBL151G_ser.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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SMCJ40A SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ40AH SMCJH.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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SMBJ40A SMBJ.pdf
SMBJ40A
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM043NB04CZ C0G
TSM043NB04CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
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TSM043NB04LCZ C0G TSM043NB04LCZ_A2008.pdf
TSM043NB04LCZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
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TSM045NB06CR RLG TSM045NB06CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 5mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 104nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
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BZX55B7V5 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B7V5 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1090+0.079 EUR
Mindestbestellmenge: 1090 Stücke
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BZT52C7V5 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C7V5 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.06 EUR
Mindestbestellmenge: 80 Stücke
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BZX55B8V2 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B8V2 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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BZX55C8V2 R0G
BZX55C8V2 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
675+0.13 EUR
Mindestbestellmenge: 675 Stücke
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BZT52C8V2 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C8V2 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; reel,tape; single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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