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SMCJ5.0CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ5.0CAH TAIWAN SEMICONDUCTOR SMCJH SERIES_A2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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RSFBL TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Max. forward voltage: 1.3V
Max. off-state voltage: 0.1kV
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
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BZW04-20 BZW04-20 TAIWAN SEMICONDUCTOR bzw045v8.pdf BZW04 SERIES_J2104.pdf en.CD00000693.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-20B BZW04-20B TAIWAN SEMICONDUCTOR BZW04 SERIES_J2104.pdf bzw045v8.pdf description Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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S1M S1M TAIWAN SEMICONDUCTOR S1D-M2G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 12pF
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394+0.21 EUR
702+0.12 EUR
1060+0.08 EUR
1254+0.068 EUR
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MBR20200CT MBR20200CT TAIWAN SEMICONDUCTOR MBR2035CT-DTE.pdf MBR20200CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 150A
Kind of package: tube
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1SMA4742 TAIWAN SEMICONDUCTOR 1SMA4741-4764%20N0194%20REV.C.pdf 1SMA4737 SERIES_P2102.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
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SMAJ26CAH SMAJ26CAH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TSCDH20065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDH20065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 76A
Leakage current: 0.2mA
Kind of package: tube
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BZT52B8V2S RRG BZT52B8V2S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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TSZU52C13 RGG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
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219+0.39 EUR
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MBR10100 MBR10100 TAIWAN SEMICONDUCTOR MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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TS2581CS RLG TS2581CS RLG TAIWAN SEMICONDUCTOR Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Topology: buck
Mounting: SMD
Input voltage: 8...40V DC
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Integrated circuit features: PWM
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.1MHz
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SMAJ15A SMAJ15A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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P4SMA6.8CA P4SMA6.8CA TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf SMAP4SMA6V8CAC.pdf P4SMA SERIES_S2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA6.8A P4SMA6.8A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf 5272_P4SMA6.8A.pdf SMAP4SMA6V8ASA.pdf P4SMA SERIES_S2102.pdf P4SMAx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA68CA P4SMA68CA TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 SMAP4SMA68CASC.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA68A P4SMA68A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf SMAP4SMA68AS0A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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SSL14 M2G SSL14 M2G TAIWAN SEMICONDUCTOR SSL12_14.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
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B0540W RHG B0540W RHG TAIWAN SEMICONDUCTOR B0540W-RHG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
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SF16G SF16G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 30A
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SF1608GH SF1608GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1604GH SF1604GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1604PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1606GH SF1606GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 125A
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SF1606PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1608PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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TSF40H100C C0G TSF40H100C C0G TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
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SMBJ11A SMBJ11A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
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MBR2060CT MBR2060CT TAIWAN SEMICONDUCTOR MBR2050-2060CT%20MBRB2050CT%20N0034%20REV.C.pdf littelfuse_power_semiconductor_schottky_diode_mbr2060ct_datasheet.pdf?assetguid=06bd1c81-fa73-485c-90fc-f7c31d66faf2 MBR2035%7E60CT.pdf MBR2035CT SERIES_M2104.pdf MBR%28F%292045CT-2060CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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80+1.07 EUR
90+0.95 EUR
95+0.89 EUR
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MBR2060CT MBR2060CT TAIWAN SEMICONDUCTOR MBR2035CT-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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BZW04-40 BZW04-40 TAIWAN SEMICONDUCTOR BZW04 SERIES_J2104.pdf bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-40B BZW04-40B TAIWAN SEMICONDUCTOR bzw045v8.pdf BZW04 SERIES_J2104.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BYG23M BYG23M TAIWAN SEMICONDUCTOR BYG23M_C2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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BYG23MH BYG23MH TAIWAN SEMICONDUCTOR BYG23MH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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BYG23M M2G TAIWAN SEMICONDUCTOR BYG23M_B14.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
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SR110 SR110 TAIWAN SEMICONDUCTOR SR102 SERIES_G2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
auf Bestellung 509 Stücke:
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200+0.43 EUR
295+0.29 EUR
509+0.17 EUR
Mindestbestellmenge: 200 Stücke
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SMCJ36CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ15A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSM100N06CZ C0G TSM100N06CZ C0G TAIWAN SEMICONDUCTOR TSM100N06.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
Produkt ist nicht verfügbar
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1N4007G 1N4007G TAIWAN SEMICONDUCTOR 1N4001-D.PDF 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
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113+0.75 EUR
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SMCJ5.0CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ5.0CAH SMCJH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RSFBL
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Max. forward voltage: 1.3V
Max. off-state voltage: 0.1kV
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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BZW04-20 bzw045v8.pdf BZW04 SERIES_J2104.pdf en.CD00000693.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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BZW04-20B description BZW04 SERIES_J2104.pdf bzw045v8.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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S1M S1D-M2G.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 12pF
auf Bestellung 3769 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
394+0.21 EUR
702+0.12 EUR
1060+0.08 EUR
1254+0.068 EUR
2000+0.057 EUR
Mindestbestellmenge: 278 Stücke
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MBR20200CT MBR2035CT-DTE.pdf MBR20200CT.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 150A
Kind of package: tube
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1SMA4742 1SMA4741-4764%20N0194%20REV.C.pdf 1SMA4737 SERIES_P2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Produkt ist nicht verfügbar
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SMAJ26CAH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSCDH20065G1 pdf.php?pn=TSCDH20065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 76A
Leakage current: 0.2mA
Kind of package: tube
Produkt ist nicht verfügbar
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BZT52B8V2S RRG BZT52B2V4S SERIES_H2212.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 50 Stücke:
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AnzahlPrivatkunde
50+1.7 EUR
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TSZU52C13 RGG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
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162+0.52 EUR
219+0.39 EUR
380+0.23 EUR
Mindestbestellmenge: 162 Stücke
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MBR10100 MBR1035 SERIES_M2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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TS2581CS RLG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Topology: buck
Mounting: SMD
Input voltage: 8...40V DC
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Integrated circuit features: PWM
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.1MHz
Produkt ist nicht verfügbar
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SMAJ15A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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P4SMA6.8CA tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf SMAP4SMA6V8CAC.pdf P4SMA SERIES_S2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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P4SMA6.8A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf 5272_P4SMA6.8A.pdf SMAP4SMA6V8ASA.pdf P4SMA SERIES_S2102.pdf P4SMAx.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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P4SMA68CA tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 SMAP4SMA68CASC.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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P4SMA68A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf SMAP4SMA68AS0A.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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SSL14 M2G SSL12_14.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5 EUR
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B0540W RHG B0540W-RHG.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
auf Bestellung 206 Stücke:
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206+0.4 EUR
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SF16G SF11G SERIES_H2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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SF1608GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF1604GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF1604PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF1606GH SF1601G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Produkt ist nicht verfügbar
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SF1606PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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SF1608PTH SF1601PT SERIES_G2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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TSF40H100C C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
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SMBJ11A SMBJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
Produkt ist nicht verfügbar
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MBR2060CT MBR2050-2060CT%20MBRB2050CT%20N0034%20REV.C.pdf littelfuse_power_semiconductor_schottky_diode_mbr2060ct_datasheet.pdf?assetguid=06bd1c81-fa73-485c-90fc-f7c31d66faf2 MBR2035%7E60CT.pdf MBR2035CT SERIES_M2104.pdf MBR%28F%292045CT-2060CT.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.07 EUR
90+0.95 EUR
95+0.89 EUR
Mindestbestellmenge: 80 Stücke
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MBR2060CT MBR2035CT-DTE.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BZW04-40 BZW04 SERIES_J2104.pdf bzw045v8.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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BZW04-40B bzw045v8.pdf BZW04 SERIES_J2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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BYG23M BYG23M_C2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYG23MH BYG23MH_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BYG23M M2G BYG23M_B14.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22500+0.036 EUR
Mindestbestellmenge: 22500 Stücke
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SR110 SR102 SERIES_G2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
295+0.29 EUR
509+0.17 EUR
Mindestbestellmenge: 200 Stücke
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SMCJ36CA SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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SMCJ15A SMCJ.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSM100N06CZ C0G TSM100N06.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
Produkt ist nicht verfügbar
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1N4007G 1N4001-D.PDF 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
113+0.75 EUR
Mindestbestellmenge: 113 Stücke
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