Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (50148) > Seite 833 nach 836
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SF1606PTH | TAIWAN SEMICONDUCTOR |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.4kV Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
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| SF1608PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.6kV Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
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TSF40H100C C0G | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.65V Max. forward impulse current: 250A Kind of package: tube |
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SMBJ11A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape Leakage current: 1µA |
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MBR2060CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW04-40 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
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BZW04-40B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
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BYG23M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 65ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
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BYG23MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 65ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
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| BYG23M M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMA; 1.7V Type of diode: rectifying Case: SMA Max. forward voltage: 1.7V |
auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 22500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SR110 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.85V |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMCJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 64A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Mounting: THT Power dissipation: 107W Gate charge: 81nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 6.7mΩ |
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P6SMB200A R4 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MUR1640CT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 100A Case: TO220AB Reverse recovery time: 50ns Max. load current: 16A |
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MUR1640CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Reverse recovery time: 50ns Application: automotive industry Max. load current: 16A |
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| SFF2004GAH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
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| SFF2004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
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SF2004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
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| SF2004PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO3P Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
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TS25P07G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Max. forward impulse current: 350A Max. forward voltage: 1.1V Version: flat Max. off-state voltage: 1kV Electrical mounting: THT Load current: 25A Case: TS-6P Type of bridge rectifier: single-phase |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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TS50P06G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A Leads: flat pin Max. forward impulse current: 0.4kA Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 50A Kind of package: tube Case: TS-6P Type of bridge rectifier: single-phase |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRAD20100H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.85V Kind of package: reel; tape Application: automotive industry |
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SMBJ28A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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BZT52C20 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1PGSMB5955 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 180V Type of diode: Zener |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU805 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV19WS RRG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323F Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBJ15CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 25.1A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Number of channels: 1 |
auf Bestellung 7650 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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TSM260P02CX6 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26 Mounting: SMD Power dissipation: 1.56W Drain current: -6.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Case: SOT26 |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1N5402G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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1PGSMB5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Semiconductor structure: single diode Kind of package: reel; tape |
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P4SMA18A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Breakdown voltage: 17.1V Max. forward impulse current: 16.5A Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V |
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P4SMA18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Breakdown voltage: 17.1V Max. forward impulse current: 16.5A Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V |
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P4SMA18AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Breakdown voltage: 17.1V Max. forward impulse current: 16.5A Peak pulse power dissipation: 0.4kW Application: automotive industry Max. off-state voltage: 15.3V |
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SS19 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Case: SMA Max. off-state voltage: 90V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.8V |
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SS19L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape Case: subSMA Max. off-state voltage: 90V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.8V |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMF100A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 111V; 1.08A; unidirectional; SOD123W; reel,tape Case: SOD123W Mounting: SMD Type of diode: TVS Breakdown voltage: 111V Max. forward impulse current: 1.08A Peak pulse power dissipation: 0.2kW Max. off-state voltage: 0.1kV Kind of package: reel; tape Semiconductor structure: unidirectional |
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1.5SMC36CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Application: automotive industry Manufacturer series: 1.5SMC |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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| 5KSMC36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 40÷44.2V; 86A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 86A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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1.5SMC36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
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| 1.5SMC36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
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| 1.5SMC36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry |
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| SMCJ75A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMCJ75AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
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| TSM025NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 113nC Kind of package: tape Kind of channel: enhancement |
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BZW04-58 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 64.6V; 4.3A; unidirectional; DO41; BZW04 Mounting: THT Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58.1V Semiconductor structure: unidirectional Case: DO41 Type of diode: TVS Breakdown voltage: 64.6V Manufacturer series: BZW04 Max. forward impulse current: 4.3A |
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BZW04-5V8B | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.45V; 38A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 38A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
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BZW04-5V8 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 6.45V; 38A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 38A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
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BZW04-58B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 64.6V; 4.3A; bidirectional; DO41; 0.4kW; BZW04 Mounting: THT Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58.1V Semiconductor structure: bidirectional Case: DO41 Type of diode: TVS Breakdown voltage: 64.6V Manufacturer series: BZW04 Max. forward impulse current: 4.3A |
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| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
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SF804GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4Ax2; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 8A Reverse recovery time: 35ns Application: automotive industry |
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TBS410 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 110A; TBS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 110A Case: TBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.96V Features of semiconductor devices: glass passivated |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRF20H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.95V Kind of package: tube |
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MBRF30200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRF30200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
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SR310 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V Max. forward impulse current: 80A Kind of package: tape |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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| SF1606PTH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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| SF1608PTH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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| TSF40H100C C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
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| SMBJ11A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
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| MBR2060CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| BZW04-40 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BZW04-40B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BYG23M |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| BYG23MH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| BYG23M M2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
| SR110 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ36CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ15A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM100N06CZ C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
Produkt ist nicht verfügbar
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| P6SMB200A R4 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| MUR1640CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
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| MUR1640CTH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
Produkt ist nicht verfügbar
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| SFF2004GAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SFF2004GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SF2004GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SF2004PTH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| TS25P07G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| TS50P06G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Leads: flat pin
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Leads: flat pin
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRAD20100H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ28A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZT52C20 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| 1PGSMB5955 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| GBU805 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV19WS RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| SMBJ15CA R5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
auf Bestellung 7650 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ33A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM260P02CX6 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5402G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| 1PGSMB5929 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SMA5929 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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| P4SMA18A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
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| P4SMA18CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Produkt ist nicht verfügbar
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| P4SMA18AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 15.3V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 15.3V
Produkt ist nicht verfügbar
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| SS19 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.8V
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| SS19L |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
| SMF100A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 111V; 1.08A; unidirectional; SOD123W; reel,tape
Case: SOD123W
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 111V
Max. forward impulse current: 1.08A
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 111V; 1.08A; unidirectional; SOD123W; reel,tape
Case: SOD123W
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 111V
Max. forward impulse current: 1.08A
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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| 1.5SMC36CAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
| 5KSMC36AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 1.5SMC36CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC36A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC36AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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| SMCJ75A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ75AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| TSM025NB04CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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| BZW04-58 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.3A; unidirectional; DO41; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: unidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.3A; unidirectional; DO41; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: unidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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| BZW04-5V8B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 38A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 38A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BZW04-5V8 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.45V; 38A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.45V; 38A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BZW04-58B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 64.6V; 4.3A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 64.6V; 4.3A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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| 1N5408G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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| SF804GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Reverse recovery time: 35ns
Application: automotive industry
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| TBS410 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 110A; TBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 110A
Case: TBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.96V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 110A; TBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 110A
Case: TBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.96V
Features of semiconductor devices: glass passivated
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRF20H100CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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| MBRF30200CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRF30200CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
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| SR310 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)