Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (50189) > Seite 832 nach 837
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| TSM280NB06LCR RLG | TAIWAN SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: tape Kind of channel: enhancement |
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TSD20H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 120V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.87V Max. forward impulse current: 100A |
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| TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
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| DBL206G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.15V Electrical mounting: THT Version: DIP |
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1SMA4756 R3G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.25W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS2545CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.82V Load current: 12.5A x2 Max. load current: 25A Max. off-state voltage: 45V Semiconductor structure: common cathode; double |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLD5S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 3.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 212A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD5S |
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| TLD6S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 271A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD6S |
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| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 388A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD8S |
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TSM4946DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 30nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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SFAS804GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 8A Max. off-state voltage: 200V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
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SFAS805GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 300V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
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SFAS806GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 0.4kV Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
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SFAS808GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: D2PAK Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
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TSM60NB380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 19.4nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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| HERF1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 10A Reverse recovery time: 50ns Application: automotive industry |
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SMAJ45CA R3G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Operating temperature: -55...150°C Number of channels: 1 |
auf Bestellung 32400 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSSE3H45H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Kind of package: reel; tape Application: automotive industry |
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SK520CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 120A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 200V Load current: 5A |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5927 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
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1SMA5938 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| TS10KL100 D3 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A Type of bridge rectifier: single-phase Max. forward impulse current: 180A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 10A Kind of package: tube Case: KBJL |
Produkt ist nicht verfügbar |
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| SFAF508GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Reverse recovery time: 35ns Application: automotive industry |
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BZT52C10 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
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BZT52C2V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 959 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TSM120N06LCS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 37nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM120N06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 14W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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KBL404G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Case: KBL Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 4A Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| KBL402G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBL Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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TPMR6GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V Mounting: SMD Max. forward voltage: 1.8V Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.4kV Load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: TO277A Type of diode: rectifying Reverse recovery time: 60ns |
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TPMR6JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.6kV Load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: TO277A Type of diode: rectifying Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
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RABS20M | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Case: ABS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1.16V |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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RABS20M M3G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Case: ABS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1.16V |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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B0530WS RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape Mounting: SMD Max. forward impulse current: 5A Max. forward voltage: 0.47V Max. off-state voltage: 30V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323F Capacitance: 0.16nF Type of diode: Schottky switching |
auf Bestellung 14275 Stücke: Lieferzeit 14-21 Tag (e) |
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SK210A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape |
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| TSM070NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Power dissipation: 28W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 39nC Kind of package: tape Kind of channel: enhancement |
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TSM250N02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 25mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
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TSM2NB60CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.35A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 9.4nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tape Kind of channel: enhancement |
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TS5205CX533 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.275V Output voltage: 3.3V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC2506 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
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| GBPC2506W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
Produkt ist nicht verfügbar |
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| TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
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SMCJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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LL4006G L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Case: MELF Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMCJ26CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SMCJ26CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
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| TQM025NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 136W Case: PDFN56U Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TS5205CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.165V Output voltage: 1.5...15V Output current: 0.15A Case: SOT25 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 2.5...16V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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TS5205CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.275V Output voltage: 2.4...15V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Power dissipation: 36W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 79nC Kind of package: tape Kind of channel: enhancement |
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TS5205CX550 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.275V Output voltage: 5V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V |
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BYG21M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 13pF Case: SMA Max. forward voltage: 1.6V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG21MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.6V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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PU2BAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.93V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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TQL851CSV33 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 3.3V Output current: 0.5A Case: SO8-EP Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...50V |
Produkt ist nicht verfügbar |
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TQL851CSV50 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 5V Output current: 0.5A Case: SO8-EP Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...50V |
Produkt ist nicht verfügbar |
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PU2DBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.73V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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ES2AAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape Max. off-state voltage: 50V Load current: 2A Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
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BZT52B15-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 573 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM280NB06LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TSD20H120CW MNG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TSM220NB06CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| DBL206G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1SMA4756 R3G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.84 EUR |
| MBRS2545CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.77 EUR |
| 57+ | 1.51 EUR |
| 61+ | 1.39 EUR |
| 100+ | 1.24 EUR |
| TLD5S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLD6S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TLD8S10AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Produkt ist nicht verfügbar
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| TSM4946DCS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 1.54 EUR |
| 68+ | 1.26 EUR |
| SFAS804GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SFAS805GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SFAS806GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFAS808GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| TSM60NB380CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.69 EUR |
| 35+ | 2.43 EUR |
| 40+ | 2.14 EUR |
| HERF1005GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
Produkt ist nicht verfügbar
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| SMAJ45CA R3G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
auf Bestellung 32400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19842+ | 0.035 EUR |
| TSSE3H45H |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| SK520CH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.98 EUR |
| 1SMA5927 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1SMA5938 M2G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 10.64 EUR |
| TS10KL100 D3 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
Produkt ist nicht verfügbar
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| SFAF508GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZT52C10 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52C2V7 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 959 Stücke:
Lieferzeit 14-21 Tag (e)
| TSM120N06LCS RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TSM120N06LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBL404G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBL402G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPMR6GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPMR6JH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RABS20M |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 0.73 EUR |
| 175+ | 0.49 EUR |
| 296+ | 0.29 EUR |
| 500+ | 0.19 EUR |
| RABS20M M3G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.58 EUR |
| B0530WS RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
auf Bestellung 14275 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 516+ | 0.17 EUR |
| 837+ | 0.1 EUR |
| 1158+ | 0.074 EUR |
| 1327+ | 0.064 EUR |
| 3000+ | 0.052 EUR |
| 6000+ | 0.051 EUR |
| SK210A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM070NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM250N02CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM2NB60CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM025NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS5205CX533 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.31 EUR |
| GBPC2506 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2506W |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| TSM110NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| SMCJ24CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| LL4006G L0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
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| SMCJ26CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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Im Einkaufswagen
Stück im Wert von UAH
| SMCJ26CAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TQM025NH04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS5205CX5 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.15 EUR |
| TS5205CX5 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 128+ | 0.67 EUR |
| 149+ | 0.57 EUR |
| 198+ | 0.43 EUR |
| TSM033NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS5205CX550 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYG21M |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 244+ | 0.35 EUR |
| 275+ | 0.31 EUR |
| BYG21MH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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| PU2BAH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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Stück im Wert von UAH
| TQL851CSV33 RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TQL851CSV50 RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PU2DBH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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| ES2AAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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Im Einkaufswagen
Stück im Wert von UAH
| BZT52B15-G RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 424+ | 0.2 EUR |
| 539+ | 0.15 EUR |
| 573+ | 0.14 EUR |