Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13050) > Seite 194 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK15S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK15S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC244D | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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74HC244D | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 20SOIC Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
auf Bestellung 1368 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
auf Bestellung 20588 Stücke: Lieferzeit 10-14 Tag (e) |
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TK62N60W5,S1VF | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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TB62747AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: 16-CH CONSTANT CURRENT LED DRIVE Packaging: Cut Tape (CT) Package / Case: 24-SOP (0.236", 6.00mm Width) Voltage - Output: 26V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Current - Output / Channel: 45mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 2383 Stücke: Lieferzeit 10-14 Tag (e) |
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TOTX1353(F) | Toshiba Semiconductor and Storage |
Description: XMITTER FIBER OPTIC 650NM Packaging: Tube Connector Type: TOSLINK Wavelength: 650nm Voltage - Forward (Vf) (Typ): 1.75V Part Status: Active Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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TK20E60W,S1VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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TK25E60X5,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1304,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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RN1304,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 2902 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1308,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1308,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK10P50W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK10P50W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
auf Bestellung 1613 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J401TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
Produkt ist nicht verfügbar |
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SSM6J401TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
auf Bestellung 2733 Stücke: Lieferzeit 10-14 Tag (e) |
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TC4069UBF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 4V ~ 12V Input Logic Level - Low: 1V ~ 3V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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TC4069UBF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 4V ~ 12V Input Logic Level - Low: 1V ~ 3V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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TBD62089APG | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 20DIP Packaging: Tray Package / Case: 20-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 8 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 1.6Ohm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 20-DIP Part Status: Active |
Produkt ist nicht verfügbar |
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CRH02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 500MA S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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CRH02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 500MA S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 2539 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3073(LF1,F | Toshiba Semiconductor and Storage |
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 1mA (Typ) Supplier Device Package: 6-SO, 5 Lead Zero Crossing Circuit: No Static dV/dt (Min): 2000V/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 800 V Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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TLP3062A(LF1,F | Toshiba Semiconductor and Storage |
Description: OPTO TRIAC COUPLER; ZERO-VOLTAGE Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 600µA (Typ) Supplier Device Package: 6-SO, 5 Lead Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP5751(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SO Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC74D | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DUAL 1BIT 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 67 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC74D | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DUAL 1BIT 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 67 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 3567 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP183(GRH-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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TLP183(GRH-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN3R804NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 40A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN3R804NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 40A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V |
auf Bestellung 12570 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN9R614MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN9R614MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 13147 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN7R104NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Power Dissipation (Max): 840mW (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN7R104NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Power Dissipation (Max): 840mW (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V |
auf Bestellung 9050 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC123D | Toshiba Semiconductor and Storage |
Description: IC MULTIVIBRATOR 40NS 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 40 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC123D | Toshiba Semiconductor and Storage |
Description: IC MULTIVIBRATOR 40NS 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 40 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V |
auf Bestellung 15355 Stücke: Lieferzeit 10-14 Tag (e) |
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CUHS20S60,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CUHS20S60,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V |
auf Bestellung 6336 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74AC14F(EL,F) | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 6CH 6IN 14SOP Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
Produkt ist nicht verfügbar |
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TC74VHC4040F(E,K,F | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12-BIT 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-SOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 12 |
Produkt ist nicht verfügbar |
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TC74VHC4040F(E,K,F | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12-BIT 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-SOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 12 |
Produkt ist nicht verfügbar |
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TC74VHC4040FK(EL,K | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12BIT 16VSSOP Packaging: Tape & Reel (TR) Package / Case: 16-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-VSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 12 |
Produkt ist nicht verfügbar |
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TC74VHC4040FK(EL,K | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12BIT 16VSSOP Packaging: Cut Tape (CT) Package / Case: 16-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-VSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 12 |
Produkt ist nicht verfügbar |
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74HC540D | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 6V 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC540D | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 6V 20SOIC Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
auf Bestellung 6964 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP750(PPA,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
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TLP750(PP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
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TLP750(D4-COS-F2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 15V Turn On / Turn Off Time (Typ): 200ns, 1µs Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
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TLP750(D4COS-TP5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 15V Turn On / Turn Off Time (Typ): 200ns, 1µs Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
Produkt ist nicht verfügbar |
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TLP291(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: X36 PB-F TRANSISTOR COUPLER SO4 Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP291(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: X36 PB-F TRANSISTOR COUPLER SO4 Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3530 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3914(TP15,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 20µA Voltage - Isolation: 1500Vrms Supplier Device Package: 4-SSOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 600µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
Produkt ist nicht verfügbar |
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TLP3914(TP15,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 20µA Voltage - Isolation: 1500Vrms Supplier Device Package: 4-SSOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 600µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3910(D4C20TPE | Toshiba Semiconductor and Storage |
Description: PHOTOVOLTAIC COUPLER; HIGH VOC; Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 3.3V Input Type: DC Voltage - Isolation: 5000Vrms Supplier Device Package: 6-SO Voltage - Output (Max): 24V Turn On / Turn Off Time (Typ): 300µs, 100µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 1033 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3910(D4-TP,E | Toshiba Semiconductor and Storage |
Description: PHOTOVOLTAIC COUPLER; HIGH VOC; Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 3.3V Input Type: DC Voltage - Isolation: 5000Vrms Supplier Device Package: 6-SO Voltage - Output (Max): 24V Turn On / Turn Off Time (Typ): 300µs, 100µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 30 mA |
Produkt ist nicht verfügbar |
TK15S04N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
TK15S04N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
14+ | 1.29 EUR |
100+ | 0.89 EUR |
500+ | 0.75 EUR |
1000+ | 0.64 EUR |
74HC244D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER NON-INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Produkt ist nicht verfügbar
74HC244D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER NON-INVERT 6V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 1368 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.2 EUR |
17+ | 1.06 EUR |
25+ | 0.99 EUR |
100+ | 0.81 EUR |
250+ | 0.75 EUR |
500+ | 0.64 EUR |
1000+ | 0.51 EUR |
SSM6L39TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.18 EUR |
SSM6L39TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 20588 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.61 EUR |
100+ | 0.36 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
TK62N60W5,S1VF |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.03 EUR |
10+ | 18.41 EUR |
TB62747AFG,C8,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: 16-CH CONSTANT CURRENT LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 45mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: 16-CH CONSTANT CURRENT LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 45mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.97 EUR |
10+ | 1.77 EUR |
25+ | 1.68 EUR |
100+ | 1.38 EUR |
250+ | 1.29 EUR |
500+ | 1.14 EUR |
1000+ | 0.9 EUR |
TOTX1353(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.82 EUR |
10+ | 15.1 EUR |
TK20E60W,S1VX |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.29 EUR |
10+ | 6.96 EUR |
TK25E60X5,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.08 EUR |
10+ | 7.26 EUR |
RN1304,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1304,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=47KOH
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
36+ | 0.49 EUR |
100+ | 0.28 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
RN1307,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.064 EUR |
RN1307,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
59+ | 0.3 EUR |
111+ | 0.16 EUR |
500+ | 0.1 EUR |
1000+ | 0.071 EUR |
RN1308,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
RN1308,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=22KOH
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
36+ | 0.49 EUR |
100+ | 0.28 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
TK10P50W,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
TK10P50W,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 1613 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.71 EUR |
10+ | 2.25 EUR |
100+ | 1.79 EUR |
500+ | 1.52 EUR |
1000+ | 1.29 EUR |
SSM6J401TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Produkt ist nicht verfügbar
SSM6J401TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
auf Bestellung 2733 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
28+ | 0.65 EUR |
100+ | 0.44 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
TC4069UBF(EL,N,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TC4069UBF(EL,N,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
TBD62089APG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
Produkt ist nicht verfügbar
CRH02(TE85L,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
CRH02(TE85L,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
39+ | 0.46 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.17 EUR |
TLP3073(LF1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 1mA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2000V/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 1mA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2000V/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP3062A(LF1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; ZERO-VOLTAGE
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTO TRIAC COUPLER; ZERO-VOLTAGE
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.62 EUR |
50+ | 1.65 EUR |
TLP5751(D4-LF4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.87 EUR |
10+ | 2.58 EUR |
125+ | 1.99 EUR |
74HC74D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.32 EUR |
74HC74D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 3567 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
23+ | 0.77 EUR |
25+ | 0.72 EUR |
100+ | 0.57 EUR |
250+ | 0.53 EUR |
500+ | 0.45 EUR |
1000+ | 0.35 EUR |
TLP183(GRH-TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP183(GRH-TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
33+ | 0.54 EUR |
100+ | 0.36 EUR |
XPN3R804NC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.8 EUR |
XPN3R804NC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 12570 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.02 EUR |
11+ | 1.65 EUR |
100+ | 1.29 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
2000+ | 0.84 EUR |
XPN9R614MC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.8 EUR |
XPN9R614MC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 13147 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.02 EUR |
11+ | 1.66 EUR |
100+ | 1.29 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
2000+ | 0.84 EUR |
XPN7R104NC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.77 EUR |
XPN7R104NC,L1XHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 9050 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.95 EUR |
12+ | 1.6 EUR |
100+ | 1.24 EUR |
500+ | 1.05 EUR |
1000+ | 0.86 EUR |
2000+ | 0.81 EUR |
74HC123D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIVIBRATOR 40NS 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Description: IC MULTIVIBRATOR 40NS 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.36 EUR |
5000+ | 0.34 EUR |
12500+ | 0.32 EUR |
74HC123D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIVIBRATOR 40NS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Description: IC MULTIVIBRATOR 40NS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
auf Bestellung 15355 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.82 EUR |
25+ | 0.77 EUR |
100+ | 0.63 EUR |
250+ | 0.58 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
CUHS20S60,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
CUHS20S60,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
auf Bestellung 6336 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
41+ | 0.44 EUR |
100+ | 0.26 EUR |
500+ | 0.24 EUR |
1000+ | 0.16 EUR |
TC74AC14F(EL,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
TC74VHC4040F(E,K,F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
TC74VHC4040F(E,K,F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
TC74VHC4040FK(EL,K |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12BIT 16VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-VSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12BIT 16VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-VSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
TC74VHC4040FK(EL,K |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12BIT 16VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-VSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12BIT 16VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-VSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
74HC540D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.51 EUR |
6000+ | 0.47 EUR |
74HC540D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER INVERT 6V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 6964 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.32 EUR |
16+ | 1.16 EUR |
25+ | 1.09 EUR |
100+ | 0.89 EUR |
250+ | 0.83 EUR |
500+ | 0.7 EUR |
1000+ | 0.56 EUR |
TLP750(PPA,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP750(PP,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP750(D4-COS-F2,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP750(D4COS-TP5,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
TLP291(V4GBTP,SE |
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRANSISTOR COUPLER SO4
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: X36 PB-F TRANSISTOR COUPLER SO4
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.25 EUR |
TLP291(V4GBTP,SE |
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRANSISTOR COUPLER SO4
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: X36 PB-F TRANSISTOR COUPLER SO4
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3530 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
30+ | 0.6 EUR |
100+ | 0.34 EUR |
1000+ | 0.27 EUR |
TLP3914(TP15,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 20µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 600µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 20µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 600µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3914(TP15,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 20µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 600µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 20µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 600µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.11 EUR |
10+ | 5.02 EUR |
100+ | 4.12 EUR |
TLP3910(D4C20TPE |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 3.3V
Input Type: DC
Voltage - Isolation: 5000Vrms
Supplier Device Package: 6-SO
Voltage - Output (Max): 24V
Turn On / Turn Off Time (Typ): 300µs, 100µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 30 mA
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 3.3V
Input Type: DC
Voltage - Isolation: 5000Vrms
Supplier Device Package: 6-SO
Voltage - Output (Max): 24V
Turn On / Turn Off Time (Typ): 300µs, 100µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.32 EUR |
10+ | 3.76 EUR |
100+ | 3.08 EUR |
500+ | 2.59 EUR |
TLP3910(D4-TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 3.3V
Input Type: DC
Voltage - Isolation: 5000Vrms
Supplier Device Package: 6-SO
Voltage - Output (Max): 24V
Turn On / Turn Off Time (Typ): 300µs, 100µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 30 mA
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 3.3V
Input Type: DC
Voltage - Isolation: 5000Vrms
Supplier Device Package: 6-SO
Voltage - Output (Max): 24V
Turn On / Turn Off Time (Typ): 300µs, 100µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar