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TC7SBL384CFU,LF(CT TC7SBL384CFU,LF(CT Toshiba Semiconductor and Storage TC7SBL384CFU_datasheet_en_20220825.pdf?did=139883&prodName=TC7SBL384CFU Description: IC SWITCH SPST-NOX1 18OHM 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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38+0.56 EUR
41+0.51 EUR
100+0.38 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.21 EUR
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TK6R9P08QM,RQ TK6R9P08QM,RQ Toshiba Semiconductor and Storage docget.jsp?did=70424&prodName=TK6R9P08QM Description: UMOS10 DPAK 80V 6.9MOHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
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TK6R9P08QM,RQ TK6R9P08QM,RQ Toshiba Semiconductor and Storage docget.jsp?did=70424&prodName=TK6R9P08QM Description: UMOS10 DPAK 80V 6.9MOHM
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
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TLP351H(TP1,F) TLP351H(TP1,F) Toshiba Semiconductor and Storage docget.jsp?did=11330&prodName=TLP351H Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
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TLP351H(TP1,F) TLP351H(TP1,F) Toshiba Semiconductor and Storage docget.jsp?did=11330&prodName=TLP351H Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
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TLP351A(F) TLP351A(F) Toshiba Semiconductor and Storage docget.jsp?did=12709&prodName=TLP351A Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
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TLP3062A(TP1,F TLP3062A(TP1,F Toshiba Semiconductor and Storage TLP3062A_datasheet_en_20191118.pdf?did=30346&prodName=TLP3062A Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
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TLP3062A(TP1,F TLP3062A(TP1,F Toshiba Semiconductor and Storage TLP3062A_datasheet_en_20191118.pdf?did=30346&prodName=TLP3062A Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK16A60W5,S4VX TK16A60W5,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13747&prodName=TK16A60W5 Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
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TC74HC08APF TC74HC08APF Toshiba Semiconductor and Storage docget.jsp?did=7565&prodName=TC74HC08AP Description: IC GATE AND 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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TLP224GA(F) TLP224GA(F) Toshiba Semiconductor and Storage Description: PHOTORELAY MOSFET OUT 4-DIP
Part Status: Active
Approval Agency: CSA, cUL, UL
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP
Load Current: 120 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Packaging: Tube
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
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TLP209D(TP,F) TLP209D(TP,F) Toshiba Semiconductor and Storage Description: PHOTORELAY MOSFET OUT 8-SOP
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 50 Ohms
Voltage - Load: 0 V ~ 200 V
Supplier Device Package: 8-SOP (2.54mm)
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A) x 2
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD, Gull Wing
Part Status: Active
Produkt ist nicht verfügbar
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TLP209D(TP,F) TLP209D(TP,F) Toshiba Semiconductor and Storage Description: PHOTORELAY MOSFET OUT 8-SOP
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 50 Ohms
Voltage - Load: 0 V ~ 200 V
Supplier Device Package: 8-SOP (2.54mm)
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A) x 2
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD, Gull Wing
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC74HC244AF(EL,F) TC74HC244AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=13648&prodName=TC74HC244AF Description: IC BUFF 2V/6V 20-SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Part Status: Active
Produkt ist nicht verfügbar
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TC74HC244AF(EL,F) TC74HC244AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=13648&prodName=TC74HC244AF Description: IC BUFF 2V/6V 20-SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Part Status: Active
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TP89R103NL,LQ TP89R103NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14089&prodName=TP89R103NL Description: MOSFET N CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
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TP89R103NL,LQ TP89R103NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14089&prodName=TP89R103NL Description: MOSFET N CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
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TTC5200(Q) TTC5200(Q) Toshiba Semiconductor and Storage docget.jsp?did=962&prodName=TTC5200 Description: TRANS NPN 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
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TB67B000AFG,EL TB67B000AFG,EL Toshiba Semiconductor and Storage docget.jsp?did=68643&prodName=TB67B000AFG Description: 600V/2A FULLY INTEGRATED BRUSHLE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 34-HSSOP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
Packaging: Tape & Reel (TR)
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TB67B000AFG,EL TB67B000AFG,EL Toshiba Semiconductor and Storage docget.jsp?did=68643&prodName=TB67B000AFG Description: 600V/2A FULLY INTEGRATED BRUSHLE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 34-HSSOP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
Packaging: Cut Tape (CT)
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TK110A10PL,S4X TK110A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60953&prodName=TK110A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
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TLP2372(V4-TPR,E TLP2372(V4-TPR,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
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TLP2372(V4-TPR,E TLP2372(V4-TPR,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
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GT50J341,Q GT50J341,Q Toshiba Semiconductor and Storage docget.jsp?did=9712&prodName=GT50J341 Description: IGBT 600V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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TCK22910G,LF TCK22910G,LF Toshiba Semiconductor and Storage docget.jsp?did=53242&prodName=TCK22910G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
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TCK22910G,LF TCK22910G,LF Toshiba Semiconductor and Storage docget.jsp?did=53242&prodName=TCK22910G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
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TPD1052F,LXHF Toshiba Semiconductor and Storage TPD1052F_datasheet_en_20131101.pdf?did=12801&prodName=TPD1052F Description: IPD IC PS8 V=18 PD=0.7W F=1MHZ
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Supply (Vcc/Vdd): 5V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 500mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C
Switch Type: Relay, Solenoid Driver
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TDTC143Z,LM TDTC143Z,LM Toshiba Semiconductor and Storage docget.jsp?did=36374&prodName=TDTC143Z Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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TDTC143Z,LM TDTC143Z,LM Toshiba Semiconductor and Storage docget.jsp?did=36374&prodName=TDTC143Z Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TC74VHC165FK(EL,K) TC74VHC165FK(EL,K) Toshiba Semiconductor and Storage Description: IC 8-BIT SHIFT REGISTER 16VSSOP
Number of Bits per Element: 8
Part Status: Active
Supplier Device Package: 16-VSSOP
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Parallel or Serial to Serial
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC74VHC165FK(EL,K) TC74VHC165FK(EL,K) Toshiba Semiconductor and Storage Description: IC 8-BIT SHIFT REGISTER 16VSSOP
Number of Bits per Element: 8
Part Status: Active
Supplier Device Package: 16-VSSOP
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Parallel or Serial to Serial
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM3K37CT,L3F SSM3K37CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=6169&prodName=SSM3K37CT Description: MOSFET N-CH 20V 200MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K37CT,L3F SSM3K37CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=6169&prodName=SSM3K37CT Description: MOSFET N-CH 20V 200MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
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TLP185(V4GRTR,SE TLP185(V4GRTR,SE Toshiba Semiconductor and Storage datasheet_en_20191118.pdf?did=14111 Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP185(V4GRTR,SE TLP185(V4GRTR,SE Toshiba Semiconductor and Storage datasheet_en_20191118.pdf?did=14111 Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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SSM6N55NU,LF SSM6N55NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13426&prodName=SSM6N55NU Description: MOSFET 2N-CH 30V 4A UDFN6
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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SSM6N55NU,LF SSM6N55NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13426&prodName=SSM6N55NU Description: MOSFET 2N-CH 30V 4A UDFN6
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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TCK2065G,LF TCK2065G,LF Toshiba Semiconductor and Storage docget.jsp?did=36710&prodName=TCK2065G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.11A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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TCK2065G,LF TCK2065G,LF Toshiba Semiconductor and Storage docget.jsp?did=36710&prodName=TCK2065G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.11A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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50+0.42 EUR
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TB67B001BFTG,EL TB67B001BFTG,EL Toshiba Semiconductor and Storage TB67B001BFTG_datasheet_en_20220816.pdf?did=143561&prodName=TB67B001BFTG Description: BRUSHLESS MOTOR DRIVER IC FOR SE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 36-VQFN (5x5)
Voltage - Load: 4V ~ 22V
Technology: NMOS, PMOS
Applications: General Purpose
Voltage - Supply: 4V ~ 22V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 105°C
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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TB67B001BFTG,EL TB67B001BFTG,EL Toshiba Semiconductor and Storage TB67B001BFTG_datasheet_en_20220816.pdf?did=143561&prodName=TB67B001BFTG Description: BRUSHLESS MOTOR DRIVER IC FOR SE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 36-VQFN (5x5)
Voltage - Load: 4V ~ 22V
Technology: NMOS, PMOS
Applications: General Purpose
Voltage - Supply: 4V ~ 22V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 105°C
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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TK11P65W,RQ TK11P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15424&prodName=TK11P65W Description: MOSFET N-CH 650V 11.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
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TK11P65W,RQ TK11P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15424&prodName=TK11P65W Description: MOSFET N-CH 650V 11.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
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TCR2EE19,LM(CT TCR2EE19,LM(CT Toshiba Semiconductor and Storage TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105 Description: IC REG LINEAR 1.9V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE19,LM(CT TCR2EE19,LM(CT Toshiba Semiconductor and Storage TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105 Description: IC REG LINEAR 1.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TLP5774H(TP4,E TLP5774H(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
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10+3.36 EUR
100+2.58 EUR
500+2.33 EUR
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TK4P60D,RQ TK4P60D,RQ Toshiba Semiconductor and Storage docget.jsp?did=12804&prodName=TK4P60D Description: PB-F POWER MOSFET TRANSISTOR DP(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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TK4P60D,RQ TK4P60D,RQ Toshiba Semiconductor and Storage docget.jsp?did=12804&prodName=TK4P60D Description: PB-F POWER MOSFET TRANSISTOR DP(
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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TCR3DG12,LF TCR3DG12,LF Toshiba Semiconductor and Storage TCR3DG33_datasheet_en_20221118.pdf?did=36247&prodName=TCR3DG33 Description: IC REG LINEAR 1.2V 300MA 4WCSPE
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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TCR3DG12,LF TCR3DG12,LF Toshiba Semiconductor and Storage TCR3DG33_datasheet_en_20221118.pdf?did=36247&prodName=TCR3DG33 Description: IC REG LINEAR 1.2V 300MA 4WCSPE
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
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TK110Z65Z,S1F TK110Z65Z,S1F Toshiba Semiconductor and Storage Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
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TDTA143Z,LM TDTA143Z,LM Toshiba Semiconductor and Storage docget.jsp?did=36368&prodName=TDTA143Z Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA143Z,LM TDTA143Z,LM Toshiba Semiconductor and Storage docget.jsp?did=36368&prodName=TDTA143Z Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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TPH2R903PL,L1Q TPH2R903PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55619&prodName=TPH2R903PL Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Produkt ist nicht verfügbar
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TPH2R903PL,L1Q TPH2R903PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55619&prodName=TPH2R903PL Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
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CUZ6V8,H3F CUZ6V8,H3F Toshiba Semiconductor and Storage Description: TVS DIODE 6.8VWM 13VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
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CUZ6V8,H3F CUZ6V8,H3F Toshiba Semiconductor and Storage Description: TVS DIODE 6.8VWM 13VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
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TLP184(TPR,SE TLP184(TPR,SE Toshiba Semiconductor and Storage TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP184(TPR,SE TLP184(TPR,SE Toshiba Semiconductor and Storage TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP184(GB-TPR,SE TLP184(GB-TPR,SE Toshiba Semiconductor and Storage TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TC7SBL384CFU,LF(CT TC7SBL384CFU_datasheet_en_20220825.pdf?did=139883&prodName=TC7SBL384CFU
TC7SBL384CFU,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NOX1 18OHM 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 6ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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38+0.56 EUR
41+0.51 EUR
100+0.38 EUR
250+0.35 EUR
500+0.29 EUR
1000+0.21 EUR
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TK6R9P08QM,RQ docget.jsp?did=70424&prodName=TK6R9P08QM
TK6R9P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 6.9MOHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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TK6R9P08QM,RQ docget.jsp?did=70424&prodName=TK6R9P08QM
TK6R9P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 6.9MOHM
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
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10+2.21 EUR
100+1.52 EUR
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TLP351H(TP1,F) docget.jsp?did=11330&prodName=TLP351H
TLP351H(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP351H(TP1,F) docget.jsp?did=11330&prodName=TLP351H
TLP351H(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
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TLP351A(F) docget.jsp?did=12709&prodName=TLP351A
TLP351A(F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
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8+2.75 EUR
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TLP3062A(TP1,F TLP3062A_datasheet_en_20191118.pdf?did=30346&prodName=TLP3062A
TLP3062A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP3062A(TP1,F TLP3062A_datasheet_en_20191118.pdf?did=30346&prodName=TLP3062A
TLP3062A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK16A60W5,S4VX docget.jsp?did=13747&prodName=TK16A60W5
TK16A60W5,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.71 EUR
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TC74HC08APF docget.jsp?did=7565&prodName=TC74HC08AP
TC74HC08APF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 3747 Stücke:
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AnzahlPrivatkunde
13+1.7 EUR
18+1.21 EUR
25+1.09 EUR
100+0.96 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.83 EUR
2500+0.8 EUR
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TLP224GA(F)
TLP224GA(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 4-DIP
Part Status: Active
Approval Agency: CSA, cUL, UL
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP
Load Current: 120 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Packaging: Tube
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
auf Bestellung 150 Stücke:
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10+2.32 EUR
11+2.06 EUR
25+1.98 EUR
50+1.9 EUR
100+1.83 EUR
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TLP209D(TP,F)
TLP209D(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 50 Ohms
Voltage - Load: 0 V ~ 200 V
Supplier Device Package: 8-SOP (2.54mm)
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A) x 2
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD, Gull Wing
Part Status: Active
Produkt ist nicht verfügbar
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TLP209D(TP,F)
TLP209D(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 50 Ohms
Voltage - Load: 0 V ~ 200 V
Supplier Device Package: 8-SOP (2.54mm)
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A) x 2
Voltage - Input: 1.15VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD, Gull Wing
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC74HC244AF(EL,F) docget.jsp?did=13648&prodName=TC74HC244AF
TC74HC244AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Part Status: Active
Produkt ist nicht verfügbar
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TC74HC244AF(EL,F) docget.jsp?did=13648&prodName=TC74HC244AF
TC74HC244AF(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Part Status: Active
auf Bestellung 1391 Stücke:
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AnzahlPrivatkunde
12+1.84 EUR
16+1.32 EUR
25+1.19 EUR
100+1.05 EUR
250+0.99 EUR
500+0.94 EUR
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TP89R103NL,LQ docget.jsp?did=14089&prodName=TP89R103NL
TP89R103NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
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TP89R103NL,LQ docget.jsp?did=14089&prodName=TP89R103NL
TP89R103NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 15A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.52 EUR
100+1 EUR
500+0.79 EUR
1000+0.71 EUR
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TTC5200(Q) docget.jsp?did=962&prodName=TTC5200
TTC5200(Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 407 Stücke:
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4+6.72 EUR
10+4.39 EUR
100+3.06 EUR
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TB67B000AFG,EL docget.jsp?did=68643&prodName=TB67B000AFG
TB67B000AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 600V/2A FULLY INTEGRATED BRUSHLE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 34-HSSOP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB67B000AFG,EL docget.jsp?did=68643&prodName=TB67B000AFG
TB67B000AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 600V/2A FULLY INTEGRATED BRUSHLE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 34-HSSOP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 115°C
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 225 Stücke:
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AnzahlPrivatkunde
2+16.34 EUR
10+11 EUR
25+9.59 EUR
100+8.01 EUR
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TK110A10PL,S4X docget.jsp?did=60953&prodName=TK110A10PL
TK110A10PL,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
50+1.62 EUR
100+1.44 EUR
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TLP2372(V4-TPR,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(V4-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Produkt ist nicht verfügbar
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TLP2372(V4-TPR,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(V4-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 2462 Stücke:
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7+3.28 EUR
10+2.34 EUR
100+1.77 EUR
500+1.52 EUR
1000+1.44 EUR
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GT50J341,Q docget.jsp?did=9712&prodName=GT50J341
GT50J341,Q
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
auf Bestellung 38 Stücke:
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AnzahlPrivatkunde
3+8.98 EUR
10+5.95 EUR
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TCK22910G,LF docget.jsp?did=53242&prodName=TCK22910G
TCK22910G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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TCK22910G,LF docget.jsp?did=53242&prodName=TCK22910G
TCK22910G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
23+0.92 EUR
100+0.58 EUR
500+0.45 EUR
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TPD1052F,LXHF TPD1052F_datasheet_en_20131101.pdf?did=12801&prodName=TPD1052F
Hersteller: Toshiba Semiconductor and Storage
Description: IPD IC PS8 V=18 PD=0.7W F=1MHZ
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Supply (Vcc/Vdd): 5V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 500mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C
Switch Type: Relay, Solenoid Driver
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
6000+0.71 EUR
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TDTC143Z,LM docget.jsp?did=36374&prodName=TDTC143Z
TDTC143Z,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTC143Z,LM docget.jsp?did=36374&prodName=TDTC143Z
TDTC143Z,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TC74VHC165FK(EL,K)
TC74VHC165FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC 8-BIT SHIFT REGISTER 16VSSOP
Number of Bits per Element: 8
Part Status: Active
Supplier Device Package: 16-VSSOP
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Parallel or Serial to Serial
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC74VHC165FK(EL,K)
TC74VHC165FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC 8-BIT SHIFT REGISTER 16VSSOP
Number of Bits per Element: 8
Part Status: Active
Supplier Device Package: 16-VSSOP
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Parallel or Serial to Serial
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM3K37CT,L3F docget.jsp?did=6169&prodName=SSM3K37CT
SSM3K37CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 200MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3K37CT,L3F docget.jsp?did=6169&prodName=SSM3K37CT
SSM3K37CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 200MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
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42+0.5 EUR
70+0.3 EUR
113+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.093 EUR
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TLP185(V4GRTR,SE datasheet_en_20191118.pdf?did=14111
TLP185(V4GRTR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP185(V4GRTR,SE datasheet_en_20191118.pdf?did=14111
TLP185(V4GRTR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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SSM6N55NU,LF docget.jsp?did=13426&prodName=SSM6N55NU
SSM6N55NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A UDFN6
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N55NU,LF docget.jsp?did=13426&prodName=SSM6N55NU
SSM6N55NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A UDFN6
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
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TCK2065G,LF docget.jsp?did=36710&prodName=TCK2065G
TCK2065G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.11A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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TCK2065G,LF docget.jsp?did=36710&prodName=TCK2065G
TCK2065G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.11A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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31+0.69 EUR
45+0.48 EUR
50+0.42 EUR
100+0.37 EUR
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500+0.32 EUR
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2500+0.29 EUR
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TB67B001BFTG,EL TB67B001BFTG_datasheet_en_20220816.pdf?did=143561&prodName=TB67B001BFTG
TB67B001BFTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR DRIVER IC FOR SE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 36-VQFN (5x5)
Voltage - Load: 4V ~ 22V
Technology: NMOS, PMOS
Applications: General Purpose
Voltage - Supply: 4V ~ 22V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 105°C
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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2000+2.81 EUR
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TB67B001BFTG,EL TB67B001BFTG_datasheet_en_20220816.pdf?did=143561&prodName=TB67B001BFTG
TB67B001BFTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR DRIVER IC FOR SE
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 36-VQFN (5x5)
Voltage - Load: 4V ~ 22V
Technology: NMOS, PMOS
Applications: General Purpose
Voltage - Supply: 4V ~ 22V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 105°C
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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4+5.26 EUR
10+3.94 EUR
25+3.61 EUR
100+3.24 EUR
250+3.07 EUR
500+2.96 EUR
1000+2.87 EUR
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TK11P65W,RQ docget.jsp?did=15424&prodName=TK11P65W
TK11P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK11P65W,RQ docget.jsp?did=15424&prodName=TK11P65W
TK11P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 451 Stücke:
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4+5.34 EUR
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TCR2EE19,LM(CT TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105
TCR2EE19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE19,LM(CT TCR2EF105_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF105
TCR2EE19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TLP5774H(TP4,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1350 Stücke:
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5+5.02 EUR
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100+2.58 EUR
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TK4P60D,RQ docget.jsp?did=12804&prodName=TK4P60D
TK4P60D,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DP(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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2000+0.69 EUR
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TK4P60D,RQ docget.jsp?did=12804&prodName=TK4P60D
TK4P60D,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DP(
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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10+2.24 EUR
15+1.49 EUR
100+0.99 EUR
500+0.83 EUR
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TCR3DG12,LF TCR3DG33_datasheet_en_20221118.pdf?did=36247&prodName=TCR3DG33
TCR3DG12,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 300MA 4WCSPE
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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5000+0.23 EUR
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TCR3DG12,LF TCR3DG33_datasheet_en_20221118.pdf?did=36247&prodName=TCR3DG33
TCR3DG12,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 300MA 4WCSPE
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
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27+0.8 EUR
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TK110Z65Z,S1F
TK110Z65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 32 Stücke:
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2+11.58 EUR
25+9.19 EUR
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TDTA143Z,LM docget.jsp?did=36368&prodName=TDTA143Z
TDTA143Z,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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TDTA143Z,LM docget.jsp?did=36368&prodName=TDTA143Z
TDTA143Z,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 2977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
106+0.2 EUR
172+0.12 EUR
500+0.089 EUR
1000+0.077 EUR
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TPH2R903PL,L1Q docget.jsp?did=55619&prodName=TPH2R903PL
TPH2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Produkt ist nicht verfügbar
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TPH2R903PL,L1Q docget.jsp?did=55619&prodName=TPH2R903PL
TPH2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 4487 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
12+1.76 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.83 EUR
2000+0.76 EUR
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CUZ6V8,H3F
CUZ6V8,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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CUZ6V8,H3F
CUZ6V8,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 3886 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
110+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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TLP184(TPR,SE TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE
TLP184(TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.35 EUR
9000+0.33 EUR
Mindestbestellmenge: 3000 Stücke
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TLP184(TPR,SE TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE
TLP184(TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 14764 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
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TLP184(GB-TPR,SE TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE
TLP184(GB-TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
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