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TLP385(GR-TPL,E TLP385(GR-TPL,E Toshiba Semiconductor and Storage TLP385_datasheet_en_20220518.pdf?did=15496&prodName=TLP385 Description: TRANSISTOR OPTOCOUPLER; 4-PIN SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.25 EUR
Mindestbestellmenge: 3000
TLP385(GR-TPL,E TLP385(GR-TPL,E Toshiba Semiconductor and Storage TLP385_datasheet_en_20220518.pdf?did=15496&prodName=TLP385 Description: TRANSISTOR OPTOCOUPLER; 4-PIN SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8445 Stücke:
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20+0.9 EUR
31+ 0.58 EUR
100+ 0.39 EUR
1000+ 0.3 EUR
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TCK303G,LF TCK303G,LF Toshiba Semiconductor and Storage TCK302G_datasheet_en_20151130.pdf?did=30163&prodName=TCK302G Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
TCK303G,LF TCK303G,LF Toshiba Semiconductor and Storage TCK302G_datasheet_en_20151130.pdf?did=30163&prodName=TCK302G Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
10+ 1.91 EUR
25+ 1.81 EUR
100+ 1.49 EUR
250+ 1.39 EUR
500+ 1.23 EUR
1000+ 0.97 EUR
2500+ 0.91 EUR
Mindestbestellmenge: 9
TCR3DM28,LF(SE TCR3DM28,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DM28,LF(SE TCR3DM28,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2300 Stücke:
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22+0.83 EUR
29+ 0.62 EUR
32+ 0.56 EUR
100+ 0.39 EUR
250+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 22
TPH3R506PL,LQ TPH3R506PL,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 94A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
TCR8BM33A,L3F TCR8BM33A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.25 EUR
Mindestbestellmenge: 5000
TCR8BM33A,L3F TCR8BM33A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9964 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
28+ 0.63 EUR
30+ 0.59 EUR
100+ 0.47 EUR
250+ 0.44 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2500+ 0.26 EUR
Mindestbestellmenge: 24
TK210V65Z,LQ TK210V65Z,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 2500 Stücke:
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2500+2.41 EUR
Mindestbestellmenge: 2500
TK210V65Z,LQ TK210V65Z,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.95 EUR
10+ 4.15 EUR
100+ 3.36 EUR
500+ 2.98 EUR
1000+ 2.56 EUR
Mindestbestellmenge: 4
74LCX02FT Toshiba Semiconductor and Storage 74LCX02FT_datasheet_en_20160913.pdf?did=15645&prodName=74LCX02FT Description: PB-F LCX TSSOP 14 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
74LCX02FT Toshiba Semiconductor and Storage 74LCX02FT_datasheet_en_20160913.pdf?did=15645&prodName=74LCX02FT Description: PB-F LCX TSSOP 14 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
32+ 0.56 EUR
35+ 0.5 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
SSM6N813R,LF SSM6N813R,LF Toshiba Semiconductor and Storage SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
Mindestbestellmenge: 3000
SSM6N813R,LF SSM6N813R,LF Toshiba Semiconductor and Storage SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 8270 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
22+ 0.83 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 19
TLP268J(TPR,E TLP268J(TPR,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP268J(TPR,E TLP268J(TPR,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
17+ 1.06 EUR
100+ 0.7 EUR
1000+ 0.55 EUR
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TLP268J(TPL,E TLP268J(TPL,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
Mindestbestellmenge: 3000
TLP268J(TPL,E TLP268J(TPL,E Toshiba Semiconductor and Storage TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
17+ 1.06 EUR
100+ 0.7 EUR
1000+ 0.55 EUR
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TLP240A(D4,F TLP240A(D4,F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 500 mA
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(D4,LF1,F TLP240A(D4,LF1,F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+ 2.03 EUR
25+ 1.81 EUR
50+ 1.72 EUR
100+ 1.63 EUR
300+ 1.44 EUR
Mindestbestellmenge: 9
TLP240A(D4,TP1,F TLP240A(D4,TP1,F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(D4,TP1,F TLP240A(D4,TP1,F Toshiba Semiconductor and Storage TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+ 2.03 EUR
25+ 1.81 EUR
50+ 1.72 EUR
100+ 1.63 EUR
250+ 1.44 EUR
500+ 1.35 EUR
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SSM6K810R,LF SSM6K810R,LF Toshiba Semiconductor and Storage SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000
SSM6K810R,LF SSM6K810R,LF Toshiba Semiconductor and Storage SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 5954 Stücke:
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Mindestbestellmenge: 22
TPC8408,LQ(S TPC8408,LQ(S Toshiba Semiconductor and Storage TPC8408_datasheet_en_20140107.pdf?did=8872&prodName=TPC8408 Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
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2500+0.35 EUR
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TPC8408,LQ(S TPC8408,LQ(S Toshiba Semiconductor and Storage TPC8408_datasheet_en_20140107.pdf?did=8872&prodName=TPC8408 Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
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TK160F10N1L,LQ TK160F10N1L,LQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Produkt ist nicht verfügbar
TK160F10N1L,LQ TK160F10N1L,LQ Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Produkt ist nicht verfügbar
RN2103MFV,L3XHF(CT RN2103MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2103MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.086 EUR
Mindestbestellmenge: 8000
RN2103MFV,L3XHF(CT RN2103MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2103MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
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100+ 0.19 EUR
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1000+ 0.11 EUR
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RN2103,LXHF(CT RN2103,LXHF(CT Toshiba Semiconductor and Storage RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
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3000+0.1 EUR
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Mindestbestellmenge: 3000
RN2103,LXHF(CT RN2103,LXHF(CT Toshiba Semiconductor and Storage RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
43+ 0.42 EUR
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500+ 0.16 EUR
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MSZ6V2,LF MSZ6V2,LF Toshiba Semiconductor and Storage MSZ6V2_datasheet_en_20201026.pdf?did=69349&prodName=MSZ6V2 Description: TVS DIODE 6.2VWM 10VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
Mindestbestellmenge: 3000
MSZ6V2,LF MSZ6V2,LF Toshiba Semiconductor and Storage MSZ6V2_datasheet_en_20201026.pdf?did=69349&prodName=MSZ6V2 Description: TVS DIODE 6.2VWM 10VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 5989 Stücke:
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32+0.56 EUR
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CUZ6V2,H3F CUZ6V2,H3F Toshiba Semiconductor and Storage CUZ6V2_datasheet_en_20201026.pdf?did=69335&prodName=CUZ6V2 Description: TVS DIODE 6.2VWM 10VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
CUZ6V2,H3F CUZ6V2,H3F Toshiba Semiconductor and Storage CUZ6V2_datasheet_en_20201026.pdf?did=69335&prodName=CUZ6V2 Description: TVS DIODE 6.2VWM 10VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 2146 Stücke:
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31+0.58 EUR
38+ 0.47 EUR
100+ 0.25 EUR
500+ 0.17 EUR
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TC75S67TU,LF TC75S67TU,LF Toshiba Semiconductor and Storage docget.jsp?did=58519&prodName=TC75S67TU Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 430µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 21000 Stücke:
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3000+0.23 EUR
6000+ 0.21 EUR
15000+ 0.2 EUR
Mindestbestellmenge: 3000
TC75S67TU,LF TC75S67TU,LF Toshiba Semiconductor and Storage docget.jsp?did=58519&prodName=TC75S67TU Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 430µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 24044 Stücke:
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30+ 0.59 EUR
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TC75S103F,LF(CT TC75S103F,LF(CT Toshiba Semiconductor and Storage Description: IC CMOS 1 CIRCUIT
Packaging: Tape & Reel (TR)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 100µA
Slew Rate: 0.52V/µs
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
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3000+0.25 EUR
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TC75S103F,LF(CT TC75S103F,LF(CT Toshiba Semiconductor and Storage Description: IC CMOS 1 CIRCUIT
Packaging: Cut Tape (CT)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 100µA
Slew Rate: 0.52V/µs
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 8591 Stücke:
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TTD1415B,S4X(S Toshiba Semiconductor and Storage docget.jsp?did=13875&prodName=TTD1415B Description: TRANSISTOR NPN TO220SIS
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
74VHC153FT 74VHC153FT Toshiba Semiconductor and Storage Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.18 EUR
5000+ 0.17 EUR
Mindestbestellmenge: 2500
74VHC153FT 74VHC153FT Toshiba Semiconductor and Storage Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
auf Bestellung 9600 Stücke:
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29+0.62 EUR
36+ 0.5 EUR
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500+ 0.26 EUR
1000+ 0.19 EUR
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SSM6K781G,LF SSM6K781G,LF Toshiba Semiconductor and Storage SSM6K781G_datasheet_en_20140404.pdf?did=14759&prodName=SSM6K781G Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
Produkt ist nicht verfügbar
SSM6K781G,LF SSM6K781G,LF Toshiba Semiconductor and Storage SSM6K781G_datasheet_en_20140404.pdf?did=14759&prodName=SSM6K781G Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
Produkt ist nicht verfügbar
SSM6K406TU,LF SSM6K406TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11741&prodName=SSM6K406TU Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+0.3 EUR
Mindestbestellmenge: 3000
SSM6K406TU,LF SSM6K406TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11741&prodName=SSM6K406TU Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
25+ 0.73 EUR
100+ 0.54 EUR
500+ 0.43 EUR
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TLP3554(F) TLP3554(F) Toshiba Semiconductor and Storage TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554 Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.16 EUR
10+ 4.83 EUR
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50+ 4.08 EUR
100+ 3.86 EUR
Mindestbestellmenge: 4
RN4903,LXHF(CT RN4903,LXHF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
RN4903,LXHF(CT RN4903,LXHF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
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24+0.76 EUR
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500+ 0.21 EUR
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Mindestbestellmenge: 24
TK3P80E,RQ Toshiba Semiconductor and Storage TK3P80E_datasheet_en_20140917.pdf?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
TK3P80E,RQ Toshiba Semiconductor and Storage TK3P80E_datasheet_en_20140917.pdf?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1859 Stücke:
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500+ 0.96 EUR
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TODX2960A(F) Toshiba Semiconductor and Storage TODX2960A(F)_datasheet_en_20160415.pdf?did=37192&prodName=TODX2960A(F) Description: MOD OPTICAL TXRX GP 10PIN
Packaging: Tube
Connector Type: JIS F07
Wavelength: 770nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Part Status: Not For New Designs
Produkt ist nicht verfügbar
SSM6J808R,LF SSM6J808R,LF Toshiba Semiconductor and Storage Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
Mindestbestellmenge: 3000
SSM6J808R,LF SSM6J808R,LF Toshiba Semiconductor and Storage Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5983 Stücke:
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18+1.02 EUR
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500+ 0.47 EUR
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SSM6J825R,LF SSM6J825R,LF Toshiba Semiconductor and Storage docget.jsp?did=141463&prodName=SSM6J825R Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.21 EUR
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SSM6J825R,LF SSM6J825R,LF Toshiba Semiconductor and Storage docget.jsp?did=141463&prodName=SSM6J825R Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
30+ 0.6 EUR
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500+ 0.31 EUR
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TK2R9E10PL,S1X Toshiba Semiconductor and Storage TK2R9E10PL_datasheet_en_20210202.pdf?did=60422&prodName=TK2R9E10PL Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 47 Stücke:
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4+4.54 EUR
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TK8R2E06PL,S1X Toshiba Semiconductor and Storage TK8R2E06PL_datasheet_en_20210202.pdf?did=55709&prodName=TK8R2E06PL Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 59 Stücke:
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10+1.85 EUR
50+ 1.49 EUR
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TLP385(GR-TPL,E TLP385_datasheet_en_20220518.pdf?did=15496&prodName=TLP385
TLP385(GR-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; 4-PIN SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.25 EUR
Mindestbestellmenge: 3000
TLP385(GR-TPL,E TLP385_datasheet_en_20220518.pdf?did=15496&prodName=TLP385
TLP385(GR-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; 4-PIN SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
31+ 0.58 EUR
100+ 0.39 EUR
1000+ 0.3 EUR
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TCK303G,LF TCK302G_datasheet_en_20151130.pdf?did=30163&prodName=TCK302G
TCK303G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
TCK303G,LF TCK302G_datasheet_en_20151130.pdf?did=30163&prodName=TCK302G
TCK303G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
10+ 1.91 EUR
25+ 1.81 EUR
100+ 1.49 EUR
250+ 1.39 EUR
500+ 1.23 EUR
1000+ 0.97 EUR
2500+ 0.91 EUR
Mindestbestellmenge: 9
TCR3DM28,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM28,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DM28,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM28,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2300 Stücke:
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Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.62 EUR
32+ 0.56 EUR
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250+ 0.32 EUR
500+ 0.26 EUR
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TPH3R506PL,LQ
TPH3R506PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 94A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
TCR8BM33A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM33A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.25 EUR
Mindestbestellmenge: 5000
TCR8BM33A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM33A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
28+ 0.63 EUR
30+ 0.59 EUR
100+ 0.47 EUR
250+ 0.44 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2500+ 0.26 EUR
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TK210V65Z,LQ
TK210V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 2500 Stücke:
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Anzahl Preis ohne MwSt
2500+2.41 EUR
Mindestbestellmenge: 2500
TK210V65Z,LQ
TK210V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.95 EUR
10+ 4.15 EUR
100+ 3.36 EUR
500+ 2.98 EUR
1000+ 2.56 EUR
Mindestbestellmenge: 4
74LCX02FT 74LCX02FT_datasheet_en_20160913.pdf?did=15645&prodName=74LCX02FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TSSOP 14 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.16 EUR
Mindestbestellmenge: 2500
74LCX02FT 74LCX02FT_datasheet_en_20160913.pdf?did=15645&prodName=74LCX02FT
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F LCX TSSOP 14 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
32+ 0.56 EUR
35+ 0.5 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
SSM6N813R,LF SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R
SSM6N813R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
Mindestbestellmenge: 3000
SSM6N813R,LF SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R
SSM6N813R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 8270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
22+ 0.83 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 19
TLP268J(TPR,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP268J(TPR,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
17+ 1.06 EUR
100+ 0.7 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 11
TLP268J(TPL,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
Mindestbestellmenge: 3000
TLP268J(TPL,E TLP268J_datasheet_en_20200217.pdf?did=14464&prodName=TLP268J
TLP268J(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
17+ 1.06 EUR
100+ 0.7 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 11
TLP240A(D4,F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(D4,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 500 mA
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(D4,LF1,F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(D4,LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.16 EUR
10+ 2.03 EUR
25+ 1.81 EUR
50+ 1.72 EUR
100+ 1.63 EUR
300+ 1.44 EUR
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TLP240A(D4,TP1,F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(D4,TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Produkt ist nicht verfügbar
TLP240A(D4,TP1,F TLP240A_datasheet_en_20200217.pdf?did=13992&prodName=TLP240A
TLP240A(D4,TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.16 EUR
10+ 2.03 EUR
25+ 1.81 EUR
50+ 1.72 EUR
100+ 1.63 EUR
250+ 1.44 EUR
500+ 1.35 EUR
Mindestbestellmenge: 9
SSM6K810R,LF SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R
SSM6K810R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
Mindestbestellmenge: 3000
SSM6K810R,LF SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R
SSM6K810R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 5954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 22
TPC8408,LQ(S TPC8408_datasheet_en_20140107.pdf?did=8872&prodName=TPC8408
TPC8408,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.35 EUR
Mindestbestellmenge: 2500
TPC8408,LQ(S TPC8408_datasheet_en_20140107.pdf?did=8872&prodName=TPC8408
TPC8408,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
TK160F10N1L,LQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Produkt ist nicht verfügbar
TK160F10N1L,LQ TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
TK160F10N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Produkt ist nicht verfügbar
RN2103MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2103MFV
RN2103MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.086 EUR
Mindestbestellmenge: 8000
RN2103MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2103MFV
RN2103MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
Mindestbestellmenge: 33
RN2103,LXHF(CT RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103
RN2103,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN2103,LXHF(CT RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103
RN2103,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
43+ 0.42 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
MSZ6V2,LF MSZ6V2_datasheet_en_20201026.pdf?did=69349&prodName=MSZ6V2
MSZ6V2,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
Mindestbestellmenge: 3000
MSZ6V2,LF MSZ6V2_datasheet_en_20201026.pdf?did=69349&prodName=MSZ6V2
MSZ6V2,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 5989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
39+ 0.46 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
CUZ6V2,H3F CUZ6V2_datasheet_en_20201026.pdf?did=69335&prodName=CUZ6V2
CUZ6V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
CUZ6V2,H3F CUZ6V2_datasheet_en_20201026.pdf?did=69335&prodName=CUZ6V2
CUZ6V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 2146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
38+ 0.47 EUR
100+ 0.25 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
TC75S67TU,LF docget.jsp?did=58519&prodName=TC75S67TU
TC75S67TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 430µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.21 EUR
15000+ 0.2 EUR
Mindestbestellmenge: 3000
TC75S67TU,LF docget.jsp?did=58519&prodName=TC75S67TU
TC75S67TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 430µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 24044 Stücke:
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Anzahl Preis ohne MwSt
22+0.81 EUR
28+ 0.65 EUR
30+ 0.59 EUR
100+ 0.44 EUR
250+ 0.4 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 22
TC75S103F,LF(CT
TC75S103F,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT
Packaging: Tape & Reel (TR)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 100µA
Slew Rate: 0.52V/µs
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
Mindestbestellmenge: 3000
TC75S103F,LF(CT
TC75S103F,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT
Packaging: Cut Tape (CT)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 100µA
Slew Rate: 0.52V/µs
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 8591 Stücke:
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26+0.69 EUR
30+ 0.59 EUR
32+ 0.55 EUR
100+ 0.44 EUR
250+ 0.41 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 26
TTD1415B,S4X(S docget.jsp?did=13875&prodName=TTD1415B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO220SIS
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
74VHC153FT
74VHC153FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.18 EUR
5000+ 0.17 EUR
Mindestbestellmenge: 2500
74VHC153FT
74VHC153FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
36+ 0.5 EUR
39+ 0.46 EUR
100+ 0.34 EUR
250+ 0.31 EUR
500+ 0.26 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 29
SSM6K781G,LF SSM6K781G_datasheet_en_20140404.pdf?did=14759&prodName=SSM6K781G
SSM6K781G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
Produkt ist nicht verfügbar
SSM6K781G,LF SSM6K781G_datasheet_en_20140404.pdf?did=14759&prodName=SSM6K781G
SSM6K781G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
Produkt ist nicht verfügbar
SSM6K406TU,LF docget.jsp?did=11741&prodName=SSM6K406TU
SSM6K406TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
Mindestbestellmenge: 3000
SSM6K406TU,LF docget.jsp?did=11741&prodName=SSM6K406TU
SSM6K406TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
25+ 0.73 EUR
100+ 0.54 EUR
500+ 0.43 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
TLP3554(F) TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554
TLP3554(F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.16 EUR
10+ 4.83 EUR
25+ 4.29 EUR
50+ 4.08 EUR
100+ 3.86 EUR
Mindestbestellmenge: 4
RN4903,LXHF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
RN4903,LXHF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
32+ 0.56 EUR
100+ 0.32 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TK3P80E,RQ TK3P80E_datasheet_en_20140917.pdf?did=14695&prodName=TK3P80E
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
TK3P80E,RQ TK3P80E_datasheet_en_20140917.pdf?did=14695&prodName=TK3P80E
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 10
TODX2960A(F) TODX2960A(F)_datasheet_en_20160415.pdf?did=37192&prodName=TODX2960A(F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOD OPTICAL TXRX GP 10PIN
Packaging: Tube
Connector Type: JIS F07
Wavelength: 770nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Part Status: Not For New Designs
Produkt ist nicht verfügbar
SSM6J808R,LF
SSM6J808R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
Mindestbestellmenge: 3000
SSM6J808R,LF
SSM6J808R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
SSM6J825R,LF docget.jsp?did=141463&prodName=SSM6J825R
SSM6J825R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
Mindestbestellmenge: 3000
SSM6J825R,LF docget.jsp?did=141463&prodName=SSM6J825R
SSM6J825R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
30+ 0.6 EUR
100+ 0.41 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 24
TK2R9E10PL,S1X TK2R9E10PL_datasheet_en_20210202.pdf?did=60422&prodName=TK2R9E10PL
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.54 EUR
Mindestbestellmenge: 4
TK8R2E06PL,S1X TK8R2E06PL_datasheet_en_20210202.pdf?did=55709&prodName=TK8R2E06PL
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.85 EUR
50+ 1.49 EUR
Mindestbestellmenge: 10
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