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2SK2962(TE6,F,M) 2SK2962(TE6,F,M) Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962,T6WNLF(J 2SK2962,T6WNLF(J Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962,T6F(M 2SK2962,T6F(M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP785(D4-Y-F6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785(GRL-TP6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP9104A(TOYOG2TLF Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(ND-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(FD-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(TOJS-TL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(AST-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(HNE-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(OGI-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(NCN-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(TOYOGTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(TOYOG-TL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(OGI-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(SND-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(HNE-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(HITJ-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TK090N65Z,S1F TK090N65Z,S1F Toshiba Semiconductor and Storage TK090N65Z_datasheet_en_20181126.pdf?did=63656&prodName=TK090N65Z Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.16 EUR
Mindestbestellmenge: 2
74LCX257FT 74LCX257FT Toshiba Semiconductor and Storage docget.jsp?did=15647&prodName=74LCX257FT Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Produkt ist nicht verfügbar
74LCX257FT 74LCX257FT Toshiba Semiconductor and Storage docget.jsp?did=15647&prodName=74LCX257FT Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Produkt ist nicht verfügbar
SSM6N37FE,LM SSM6N37FE,LM Toshiba Semiconductor and Storage SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N37FE,LM SSM6N37FE,LM Toshiba Semiconductor and Storage SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
Mindestbestellmenge: 31
SSM6N36FE,LM SSM6N36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11225&prodName=SSM6N36FE Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N36FE,LM SSM6N36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11225&prodName=SSM6N36FE Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
Mindestbestellmenge: 24
RN4907FE,LXHF(CT RN4907FE,LXHF(CT Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
RN4907FE,LXHF(CT RN4907FE,LXHF(CT Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
RN2907FE,LXHF(CT RN2907FE,LXHF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
RN2907FE,LXHF(CT RN2907FE,LXHF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7390 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 31
RN1907FE,LXHF(CT RN1907FE,LXHF(CT Toshiba Semiconductor and Storage RN1907FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1907FE,LXHF(CT RN1907FE,LXHF(CT Toshiba Semiconductor and Storage RN1907FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1907FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 30
CRS15I40A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=15094&prodName=CRS15I40A Description: DIODE SCHOTTKY 40V 1.5A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
TCR3DF29,LM(CT TCR3DF29,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF29 Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DF29,LM(CT TCR3DF29,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF29 Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+ 0.62 EUR
33+ 0.54 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.23 EUR
Mindestbestellmenge: 22
TCR3DF295,LM(CT TCR3DF295,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF295 Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+ 0.14 EUR
Mindestbestellmenge: 3000
TCR3DF295,LM(CT TCR3DF295,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF295 Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+ 0.62 EUR
33+ 0.54 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 22
TLP3905(TPL,E TLP3905(TPL,E Toshiba Semiconductor and Storage Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3905(TPL,E TLP3905(TPL,E Toshiba Semiconductor and Storage Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+ 1.87 EUR
100+ 1.39 EUR
500+ 1.27 EUR
Mindestbestellmenge: 6
TLP3905(TPR,E TLP3905(TPR,E Toshiba Semiconductor and Storage Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3905(TPR,E TLP3905(TPR,E Toshiba Semiconductor and Storage Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1639 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+ 1.87 EUR
100+ 1.39 EUR
500+ 1.27 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 6
TLP191B(TPL,U,C,F) TLP191B(TPL,U,C,F) Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP191B(MBSTPL,C,F TLP191B(MBSTPL,C,F Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP191B(TOJSTLUC,F TLP191B(TOJSTLUC,F Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP290(V4GBTP,SE TLP290(V4GBTP,SE Toshiba Semiconductor and Storage TLP290%28SE_datasheet_en_20190520.pdf?did=14154&prodName=TLP290(SE Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
TLP290(V4GBTP,SE TLP290(V4GBTP,SE Toshiba Semiconductor and Storage TLP290%28SE_datasheet_en_20190520.pdf?did=14154&prodName=TLP290(SE Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4086 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
34+ 0.53 EUR
100+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 22
74LCX74FT 74LCX74FT Toshiba Semiconductor and Storage 74LCX74FT_datasheet_en_20160915.pdf?did=15373&prodName=74LCX74FT Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
Produkt ist nicht verfügbar
74LCX74FT 74LCX74FT Toshiba Semiconductor and Storage 74LCX74FT_datasheet_en_20160915.pdf?did=15373&prodName=74LCX74FT Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
32+ 0.56 EUR
35+ 0.5 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
GT30J65MRB,S1E GT30J65MRB,S1E Toshiba Semiconductor and Storage Description: 650V SILICON N-CHANNEL IGBT, TO-
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.12 EUR
25+ 3.31 EUR
Mindestbestellmenge: 5
TC74HC251AP(F) TC74HC251AP(F) Toshiba Semiconductor and Storage TC74HC251AP_datasheet_en_20140301.pdf?did=14078&prodName=TC74HC251AP Description: IC MULTIPLEXER 1 X 8:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Produkt ist nicht verfügbar
TCD1103GFG(8Z) Toshiba Semiconductor and Storage Description: TCD1103GFG(8Z)
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
Produkt ist nicht verfügbar
TK090Z65Z,S1F TK090Z65Z,S1F Toshiba Semiconductor and Storage TK090Z65Z_datasheet_en_20181120.pdf?did=63649&prodName=TK090Z65Z Description: MOSFET N-CH 650V 30A TO247-4L
Packaging: Tube
Part Status: Active
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.12 EUR
10+ 8.68 EUR
Mindestbestellmenge: 2
SSM6L820R,LF SSM6L820R,LF Toshiba Semiconductor and Storage SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.33 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 3000
SSM6L820R,LF SSM6L820R,LF Toshiba Semiconductor and Storage SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+ 0.8 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 19
SSM5N15FE(TE85L,F) SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE Description: MOSFET N-CH 30V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
SSM5N15FE(TE85L,F) SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE Description: MOSFET N-CH 30V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
30+ 0.59 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 23
SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 31
MT3S113(TE85L,F) MT3S113(TE85L,F) Toshiba Semiconductor and Storage MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113 Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar
MT3S113(TE85L,F) MT3S113(TE85L,F) Toshiba Semiconductor and Storage MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113 Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 1617 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.03 EUR
25+ 0.93 EUR
100+ 0.82 EUR
250+ 0.72 EUR
500+ 0.63 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
2SK2962(TE6,F,M) 2SK2962_2009-09-29.pdf
2SK2962(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962,T6WNLF(J 2SK2962_2009-09-29.pdf
2SK2962,T6WNLF(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
2SK2962,T6F(M 2SK2962_2009-09-29.pdf
2SK2962,T6F(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP785(D4-Y-F6,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP785(GRL-TP6,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
TLP9104A(TOYOG2TLF
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(ND-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(FD-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(TOJS-TL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(AST-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(HNE-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(OGI-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(NCN-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104A(TOYOGTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(TOYOG-TL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(OGI-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(SND-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(HNE-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TLP9104(HITJ-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
TK090N65Z,S1F TK090N65Z_datasheet_en_20181126.pdf?did=63656&prodName=TK090N65Z
TK090N65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.16 EUR
Mindestbestellmenge: 2
74LCX257FT docget.jsp?did=15647&prodName=74LCX257FT
74LCX257FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Produkt ist nicht verfügbar
74LCX257FT docget.jsp?did=15647&prodName=74LCX257FT
74LCX257FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Produkt ist nicht verfügbar
SSM6N37FE,LM SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE
SSM6N37FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N37FE,LM SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE
SSM6N37FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
Mindestbestellmenge: 31
SSM6N36FE,LM docget.jsp?did=11225&prodName=SSM6N36FE
SSM6N36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N36FE,LM docget.jsp?did=11225&prodName=SSM6N36FE
SSM6N36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
Mindestbestellmenge: 24
RN4907FE,LXHF(CT RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE
RN4907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
Mindestbestellmenge: 4000
RN4907FE,LXHF(CT RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE
RN4907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 30
RN2907FE,LXHF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.13 EUR
Mindestbestellmenge: 4000
RN2907FE,LXHF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
43+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 31
RN1907FE,LXHF(CT RN1907FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1907FE
RN1907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1907FE,LXHF(CT RN1907FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1907FE
RN1907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 30
CRS15I40A(TE85L,QM docget.jsp?did=15094&prodName=CRS15I40A
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Produkt ist nicht verfügbar
TCR3DF29,LM(CT docget.jsp?did=14709&prodName=TCR3DF29
TCR3DF29,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DF29,LM(CT docget.jsp?did=14709&prodName=TCR3DF29
TCR3DF29,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.62 EUR
33+ 0.54 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.23 EUR
Mindestbestellmenge: 22
TCR3DF295,LM(CT docget.jsp?did=14709&prodName=TCR3DF295
TCR3DF295,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
Mindestbestellmenge: 3000
TCR3DF295,LM(CT docget.jsp?did=14709&prodName=TCR3DF295
TCR3DF295,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.62 EUR
33+ 0.54 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 22
TLP3905(TPL,E
TLP3905(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3905(TPL,E
TLP3905(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.97 EUR
10+ 1.87 EUR
100+ 1.39 EUR
500+ 1.27 EUR
Mindestbestellmenge: 6
TLP3905(TPR,E
TLP3905(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3905(TPR,E
TLP3905(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORVOLTAIC; 3.75KV BV; SO6; 1
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.97 EUR
10+ 1.87 EUR
100+ 1.39 EUR
500+ 1.27 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 6
TLP191B(TPL,U,C,F) TLP191B_6-17-19.pdf
TLP191B(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP191B(MBSTPL,C,F TLP191B_6-17-19.pdf
TLP191B(MBSTPL,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP191B(TOJSTLUC,F TLP191B_6-17-19.pdf
TLP191B(TOJSTLUC,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP290(V4GBTP,SE TLP290%28SE_datasheet_en_20190520.pdf?did=14154&prodName=TLP290(SE
TLP290(V4GBTP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.25 EUR
Mindestbestellmenge: 2500
TLP290(V4GBTP,SE TLP290%28SE_datasheet_en_20190520.pdf?did=14154&prodName=TLP290(SE
TLP290(V4GBTP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
34+ 0.53 EUR
100+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 22
74LCX74FT 74LCX74FT_datasheet_en_20160915.pdf?did=15373&prodName=74LCX74FT
74LCX74FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
Produkt ist nicht verfügbar
74LCX74FT 74LCX74FT_datasheet_en_20160915.pdf?did=15373&prodName=74LCX74FT
74LCX74FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
32+ 0.56 EUR
35+ 0.5 EUR
100+ 0.35 EUR
250+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 24
GT30J65MRB,S1E
GT30J65MRB,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: 650V SILICON N-CHANNEL IGBT, TO-
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.12 EUR
25+ 3.31 EUR
Mindestbestellmenge: 5
TC74HC251AP(F) TC74HC251AP_datasheet_en_20140301.pdf?did=14078&prodName=TC74HC251AP
TC74HC251AP(F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 1 X 8:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Produkt ist nicht verfügbar
TCD1103GFG(8Z)
Hersteller: Toshiba Semiconductor and Storage
Description: TCD1103GFG(8Z)
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
Produkt ist nicht verfügbar
TK090Z65Z,S1F TK090Z65Z_datasheet_en_20181120.pdf?did=63649&prodName=TK090Z65Z
TK090Z65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247-4L
Packaging: Tube
Part Status: Active
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.12 EUR
10+ 8.68 EUR
Mindestbestellmenge: 2
SSM6L820R,LF SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R
SSM6L820R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 3000
SSM6L820R,LF SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R
SSM6L820R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.8 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 19
SSM5N15FE(TE85L,F) SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE
SSM5N15FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
SSM5N15FE(TE85L,F) SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE
SSM5N15FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
30+ 0.59 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 23
SSM6N15AFE,LM SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
SSM6N15AFE,LM SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 31
MT3S113(TE85L,F) MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113
MT3S113(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar
MT3S113(TE85L,F) MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113
MT3S113(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 1617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.03 EUR
25+ 0.93 EUR
100+ 0.82 EUR
250+ 0.72 EUR
500+ 0.63 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
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