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TLP3910(D4-TP,E TLP3910(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=70690&prodName=TLP3910 Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1410 Stücke:
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4+5.32 EUR
10+3.76 EUR
100+3.08 EUR
500+2.59 EUR
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TPCP8107,LF TPCP8107,LF Toshiba Semiconductor and Storage datasheet_en_20160223.pdf?did=13672 Description: MOSFET P-CH 40V 8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2992 Stücke:
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11+1.64 EUR
18+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
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TC74AC14F(EL,F) TC74AC14F(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=70724&prodName=TC74AC14F Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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TPH4R10ANL,L1Q TPH4R10ANL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55592&prodName=TPH4R10ANL Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+1.01 EUR
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TPH4R10ANL,L1Q TPH4R10ANL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=55592&prodName=TPH4R10ANL Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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5+3.63 EUR
10+2.32 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.24 EUR
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74VHCT08AFT 74VHCT08AFT Toshiba Semiconductor and Storage docget.jsp?did=14138&prodName=74VHCT08AFT Description: IC GATE AND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHCT08AFT 74VHCT08AFT Toshiba Semiconductor and Storage docget.jsp?did=14138&prodName=74VHCT08AFT Description: IC GATE AND 4CH 2-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
auf Bestellung 680 Stücke:
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40+0.44 EUR
60+0.29 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
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GT50JR21(STA1,E,S) GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage GT50JR21_datasheet_en_20140107.pdf?did=13656&prodName=GT50JR21 Description: IGBT 600V 50A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 24 Stücke:
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2+9.87 EUR
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TLP2358(TPL,E) TLP2358(TPL,E) Toshiba Semiconductor and Storage TLP2358_datasheet_en_20191119.pdf?did=11865&prodName=TLP2358 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 12000 Stücke:
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3000+0.62 EUR
6000+0.59 EUR
9000+0.58 EUR
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TLP2358(TPL,E) TLP2358(TPL,E) Toshiba Semiconductor and Storage TLP2358_datasheet_en_20191119.pdf?did=11865&prodName=TLP2358 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 14549 Stücke:
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11+1.64 EUR
16+1.16 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.68 EUR
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RN4910,LXHF(CT RN4910,LXHF(CT Toshiba Semiconductor and Storage RN4910_datasheet_en_20210824.pdf?did=18967&prodName=RN4910 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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RN4910,LXHF(CT RN4910,LXHF(CT Toshiba Semiconductor and Storage RN4910_datasheet_en_20210824.pdf?did=18967&prodName=RN4910 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
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42+0.42 EUR
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RN4906,LXHF(CT RN4906,LXHF(CT Toshiba Semiconductor and Storage RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN4906,LXHF(CT RN4906,LXHF(CT Toshiba Semiconductor and Storage RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2700 Stücke:
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30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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RN2906,LXHF(CT RN2906,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Produkt ist nicht verfügbar
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RN2906,LXHF(CT RN2906,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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TLP352F(D4,F) TLP352F(D4,F) Toshiba Semiconductor and Storage docget.jsp?did=12756&prodName=TLP352F Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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50+1.7 EUR
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TLP267J(TPR,E TLP267J(TPR,E Toshiba Semiconductor and Storage TLP267J_datasheet_en_20200217.pdf?did=14463&prodName=TLP267J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
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3000+0.51 EUR
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TLP267J(TPR,E TLP267J(TPR,E Toshiba Semiconductor and Storage TLP267J_datasheet_en_20200217.pdf?did=14463&prodName=TLP267J Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
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10+1.78 EUR
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500+0.6 EUR
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74HC4049D 74HC4049D Toshiba Semiconductor and Storage 74HC4049D_datasheet_en_20201117.pdf?did=37239&prodName=74HC4049D Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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74HC4049D 74HC4049D Toshiba Semiconductor and Storage 74HC4049D_datasheet_en_20201117.pdf?did=37239&prodName=74HC4049D Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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DF3D36FU,LXHF DF3D36FU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=37069&prodName=DF3D36FU Description: TVS DIODE 28VWM 60VC SC70
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
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DF3D36FU,LXHF DF3D36FU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=37069&prodName=DF3D36FU Description: TVS DIODE 28VWM 60VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5964 Stücke:
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DF3D29FU,LXHF DF3D29FU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=29931&prodName=DF3D29FU Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
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DF3D29FU,LXHF DF3D29FU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=29931&prodName=DF3D29FU Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5493 Stücke:
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40+0.44 EUR
62+0.29 EUR
100+0.2 EUR
500+0.16 EUR
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TLP2355(TPL,E TLP2355(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=11905&prodName=TLP2355 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 74800 Stücke:
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3000+0.62 EUR
6000+0.59 EUR
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15000+0.56 EUR
21000+0.55 EUR
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TLP2355(TPL,E TLP2355(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=11905&prodName=TLP2355 Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 74990 Stücke:
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74LCX245FT 74LCX245FT Toshiba Semiconductor and Storage docget.jsp?did=14672&prodName=74LCX245FT Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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74LCX245FT 74LCX245FT Toshiba Semiconductor and Storage docget.jsp?did=14672&prodName=74LCX245FT Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3580 Stücke:
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100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
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TC74LCX245FK(EL,K) TC74LCX245FK(EL,K) Toshiba Semiconductor and Storage docget.jsp?did=63393&prodName=TC74LCX245FK Description: IC TXRX 1.65V/3.6V 20-VSSOP
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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TC74LCX245FK(EL,K) TC74LCX245FK(EL,K) Toshiba Semiconductor and Storage docget.jsp?did=63393&prodName=TC74LCX245FK Description: IC TXRX 1.65V/3.6V 20-VSSOP
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
auf Bestellung 2500 Stücke:
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29+0.63 EUR
32+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
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TC74LCX245F(EL,K,F TC74LCX245F(EL,K,F Toshiba Semiconductor and Storage docget.jsp?did=63393&prodName=TC74LCX245F Description: IC TXRX NON-INVERT 3.6V 20SOP
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TC74LCX245F(EL,K,F TC74LCX245F(EL,K,F Toshiba Semiconductor and Storage docget.jsp?did=63393&prodName=TC74LCX245F Description: IC TXRX NON-INVERT 3.6V 20SOP
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RN1101,LXHF(CT RN1101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
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3000+0.085 EUR
6000+0.077 EUR
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RN1101,LXHF(CT RN1101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8939 Stücke:
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56+0.32 EUR
81+0.22 EUR
121+0.15 EUR
500+0.11 EUR
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RN1101MFV,L3XHF(CT RN1101MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.074 EUR
16000+0.067 EUR
24000+0.064 EUR
Mindestbestellmenge: 8000 Stücke
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RN1101MFV,L3XHF(CT RN1101MFV,L3XHF(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 24000 Stücke:
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42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.092 EUR
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TK12A60W,S4VX TK12A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13487&prodName=TK12A60W Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 50 Stücke:
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3+7.18 EUR
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TK13P25D,RQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
auf Bestellung 2000 Stücke:
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2000+0.58 EUR
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TK13P25D,RQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 2398 Stücke:
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13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
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2SC6000(TE16L1,NQ) Toshiba Semiconductor and Storage Description: 2SC6000(TE16L1,NQ)
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XPQ1R004PB,LXHQ XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage datasheet_en_20230609.pdf?did=147473 Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Supplier Device Package: L-TOGL™
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 4500 Stücke:
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1500+1.99 EUR
Mindestbestellmenge: 1500 Stücke
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XPQ1R004PB,LXHQ XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage datasheet_en_20230609.pdf?did=147473 Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
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3+5.91 EUR
10+3.86 EUR
100+2.7 EUR
500+2.2 EUR
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XPQR3004PB,LXHQ XPQR3004PB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=147477&prodName=XPQR3004PB Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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1500+4.6 EUR
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XPQR3004PB,LXHQ XPQR3004PB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=147477&prodName=XPQR3004PB Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1823 Stücke:
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74VHC04FT 74VHC04FT Toshiba Semiconductor and Storage docget.jsp?did=14143&prodName=74VHC04FT Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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74VHC04FT 74VHC04FT Toshiba Semiconductor and Storage docget.jsp?did=14143&prodName=74VHC04FT Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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TC74VHC04FK(EL,K) TC74VHC04FK(EL,K) Toshiba Semiconductor and Storage Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
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TC74VHC04FK(EL,K) TC74VHC04FK(EL,K) Toshiba Semiconductor and Storage Description: IC INVERTER 6CH 1-INP 14VSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6L40TU,LF SSM6L40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11245&prodName=SSM6L40TU Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SSM6L40TU,LF SSM6L40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11245&prodName=SSM6L40TU Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Power - Max: 500mW (Ta)
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TC7SET14FU,LJ(CT TC7SET14FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=53722&prodName=TC7SET14FU Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
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TC7SET14FU,LJ(CT TC7SET14FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=53722&prodName=TC7SET14FU Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
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HN1C01FE-GR,LF HN1C01FE-GR,LF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Produkt ist nicht verfügbar
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HN1C01FE-GR,LF HN1C01FE-GR,LF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2848 Stücke:
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TB67H400AHG TB67H400AHG Toshiba Semiconductor and Storage TB67H400AHG_datasheet_en_20161222.pdf?did=56938&prodName=TB67H400AHG Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 397 Stücke:
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2+9.45 EUR
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TC7WH08FU,LJ(CT TC7WH08FU,LJ(CT Toshiba Semiconductor and Storage TC7WH08FU_datasheet_en_20200205.pdf?did=20117&prodName=TC7WH08FU Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
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3000+0.11 EUR
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2SC6042,T2HOSH1Q(J 2SC6042,T2HOSH1Q(J Toshiba Semiconductor and Storage 2SC6042_2006-11-13.pdf Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC6042,T2WNLQ(J 2SC6042,T2WNLQ(J Toshiba Semiconductor and Storage 2SC6042_2006-11-13.pdf Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC6142(Q) Toshiba Semiconductor and Storage 2SC6142_datasheet_en_20131101.pdf?did=1725&prodName=2SC6142 Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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TLP3910(D4-TP,E docget.jsp?did=70690&prodName=TLP3910
TLP3910(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1410 Stücke:
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4+5.32 EUR
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TPCP8107,LF datasheet_en_20160223.pdf?did=13672
TPCP8107,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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11+1.64 EUR
18+1.02 EUR
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TC74AC14F(EL,F) docget.jsp?did=70724&prodName=TC74AC14F
TC74AC14F(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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TPH4R10ANL,L1Q docget.jsp?did=55592&prodName=TPH4R10ANL
TPH4R10ANL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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5000+1.01 EUR
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TPH4R10ANL,L1Q docget.jsp?did=55592&prodName=TPH4R10ANL
TPH4R10ANL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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5+3.63 EUR
10+2.32 EUR
100+1.59 EUR
500+1.27 EUR
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74VHCT08AFT docget.jsp?did=14138&prodName=74VHCT08AFT
74VHCT08AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHCT08AFT docget.jsp?did=14138&prodName=74VHCT08AFT
74VHCT08AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
auf Bestellung 680 Stücke:
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40+0.44 EUR
60+0.29 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
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GT50JR21(STA1,E,S) GT50JR21_datasheet_en_20140107.pdf?did=13656&prodName=GT50JR21
GT50JR21(STA1,E,S)
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.87 EUR
Mindestbestellmenge: 2 Stücke
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TLP2358(TPL,E) TLP2358_datasheet_en_20191119.pdf?did=11865&prodName=TLP2358
TLP2358(TPL,E)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.62 EUR
6000+0.59 EUR
9000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
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TLP2358(TPL,E) TLP2358_datasheet_en_20191119.pdf?did=11865&prodName=TLP2358
TLP2358(TPL,E)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 14549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.64 EUR
16+1.16 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.68 EUR
Mindestbestellmenge: 11 Stücke
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RN4910,LXHF(CT RN4910_datasheet_en_20210824.pdf?did=18967&prodName=RN4910
RN4910,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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RN4910,LXHF(CT RN4910_datasheet_en_20210824.pdf?did=18967&prodName=RN4910
RN4910,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
Mindestbestellmenge: 42 Stücke
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RN4906,LXHF(CT RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906
RN4906,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN4906,LXHF(CT RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906
RN4906,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30 Stücke
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RN2906,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2906,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2906,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2906,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42 Stücke
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TLP352F(D4,F) docget.jsp?did=12756&prodName=TLP352F
TLP352F(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.89 EUR
50+1.7 EUR
Mindestbestellmenge: 7 Stücke
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TLP267J(TPR,E TLP267J_datasheet_en_20200217.pdf?did=14463&prodName=TLP267J
TLP267J(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.51 EUR
Mindestbestellmenge: 3000 Stücke
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TLP267J(TPR,E TLP267J_datasheet_en_20200217.pdf?did=14463&prodName=TLP267J
TLP267J(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 4714 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.78 EUR
17+1.08 EUR
100+0.74 EUR
500+0.6 EUR
1000+0.56 EUR
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74HC4049D 74HC4049D_datasheet_en_20201117.pdf?did=37239&prodName=74HC4049D
74HC4049D
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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74HC4049D 74HC4049D_datasheet_en_20201117.pdf?did=37239&prodName=74HC4049D
74HC4049D
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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DF3D36FU,LXHF docget.jsp?did=37069&prodName=DF3D36FU
DF3D36FU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC SC70
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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DF3D36FU,LXHF docget.jsp?did=37069&prodName=DF3D36FU
DF3D36FU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5964 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
36+0.49 EUR
100+0.3 EUR
500+0.25 EUR
1000+0.21 EUR
Mindestbestellmenge: 24 Stücke
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DF3D29FU,LXHF docget.jsp?did=29931&prodName=DF3D29FU
DF3D29FU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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DF3D29FU,LXHF docget.jsp?did=29931&prodName=DF3D29FU
DF3D29FU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
62+0.29 EUR
100+0.2 EUR
500+0.16 EUR
Mindestbestellmenge: 40 Stücke
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TLP2355(TPL,E docget.jsp?did=11905&prodName=TLP2355
TLP2355(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 74800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.62 EUR
6000+0.59 EUR
9000+0.58 EUR
15000+0.56 EUR
21000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
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TLP2355(TPL,E docget.jsp?did=11905&prodName=TLP2355
TLP2355(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 74990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.64 EUR
16+1.16 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.68 EUR
Mindestbestellmenge: 11 Stücke
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74LCX245FT docget.jsp?did=14672&prodName=74LCX245FT
74LCX245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.24 EUR
Mindestbestellmenge: 2500 Stücke
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74LCX245FT docget.jsp?did=14672&prodName=74LCX245FT
74LCX245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3580 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
46+0.39 EUR
51+0.35 EUR
100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
1000+0.25 EUR
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TC74LCX245FK(EL,K) docget.jsp?did=63393&prodName=TC74LCX245FK
TC74LCX245FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.4 EUR
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TC74LCX245FK(EL,K) docget.jsp?did=63393&prodName=TC74LCX245FK
TC74LCX245FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
29+0.63 EUR
32+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.42 EUR
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TC74LCX245F(EL,K,F docget.jsp?did=63393&prodName=TC74LCX245F
TC74LCX245F(EL,K,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Produkt ist nicht verfügbar
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TC74LCX245F(EL,K,F docget.jsp?did=63393&prodName=TC74LCX245F
TC74LCX245F(EL,K,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RN1101,LXHF(CT docget.jsp?did=18746&prodName=RN1105
RN1101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.085 EUR
6000+0.077 EUR
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RN1101,LXHF(CT docget.jsp?did=18746&prodName=RN1105
RN1101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
81+0.22 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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RN1101MFV,L3XHF(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8000+0.074 EUR
16000+0.067 EUR
24000+0.064 EUR
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RN1101MFV,L3XHF(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.092 EUR
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TK12A60W,S4VX docget.jsp?did=13487&prodName=TK12A60W
TK12A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.18 EUR
50+3.72 EUR
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TK13P25D,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.58 EUR
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TK13P25D,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 2398 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
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2SC6000(TE16L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ)
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XPQ1R004PB,LXHQ datasheet_en_20230609.pdf?did=147473
XPQ1R004PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Supplier Device Package: L-TOGL™
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+1.99 EUR
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XPQ1R004PB,LXHQ datasheet_en_20230609.pdf?did=147473
XPQ1R004PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
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AnzahlPreis
3+5.91 EUR
10+3.86 EUR
100+2.7 EUR
500+2.2 EUR
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XPQR3004PB,LXHQ docget.jsp?did=147477&prodName=XPQR3004PB
XPQR3004PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+4.6 EUR
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XPQR3004PB,LXHQ docget.jsp?did=147477&prodName=XPQR3004PB
XPQR3004PB,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1823 Stücke:
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AnzahlPreis
2+11.83 EUR
10+8 EUR
100+5.84 EUR
500+5.63 EUR
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74VHC04FT docget.jsp?did=14143&prodName=74VHC04FT
74VHC04FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.21 EUR
5000+0.2 EUR
Mindestbestellmenge: 2500 Stücke
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74VHC04FT docget.jsp?did=14143&prodName=74VHC04FT
74VHC04FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 5115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
36+0.49 EUR
52+0.34 EUR
58+0.31 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 36 Stücke
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TC74VHC04FK(EL,K)
TC74VHC04FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC74VHC04FK(EL,K)
TC74VHC04FK(EL,K)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6L40TU,LF docget.jsp?did=11245&prodName=SSM6L40TU
SSM6L40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
30000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6L40TU,LF docget.jsp?did=11245&prodName=SSM6L40TU
SSM6L40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Power - Max: 500mW (Ta)
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AnzahlPreis
18+0.99 EUR
30+0.61 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
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TC7SET14FU,LJ(CT docget.jsp?did=53722&prodName=TC7SET14FU
TC7SET14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.1 EUR
6000+0.091 EUR
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TC7SET14FU,LJ(CT docget.jsp?did=53722&prodName=TC7SET14FU
TC7SET14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
auf Bestellung 12770 Stücke:
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AnzahlPreis
33+0.55 EUR
44+0.4 EUR
50+0.35 EUR
100+0.23 EUR
250+0.19 EUR
500+0.15 EUR
1000+0.12 EUR
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HN1C01FE-GR,LF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Produkt ist nicht verfügbar
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HN1C01FE-GR,LF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2848 Stücke:
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AnzahlPreis
44+0.4 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
2000+0.086 EUR
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TB67H400AHG TB67H400AHG_datasheet_en_20161222.pdf?did=56938&prodName=TB67H400AHG
TB67H400AHG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 397 Stücke:
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AnzahlPreis
2+9.45 EUR
10+7.26 EUR
25+6.71 EUR
100+6.11 EUR
250+5.82 EUR
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TC7WH08FU,LJ(CT TC7WH08FU_datasheet_en_20200205.pdf?did=20117&prodName=TC7WH08FU
TC7WH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
6000+0.1 EUR
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2SC6042,T2HOSH1Q(J 2SC6042_2006-11-13.pdf
2SC6042,T2HOSH1Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC6042,T2WNLQ(J 2SC6042_2006-11-13.pdf
2SC6042,T2WNLQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC6142(Q) 2SC6142_datasheet_en_20131101.pdf?did=1725&prodName=2SC6142
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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