Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13050) > Seite 187 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
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CMF03(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 900V 500MA M-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 900 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 900 V |
auf Bestellung 2894 Stücke: Lieferzeit 10-14 Tag (e) |
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TPCC8104,L1Q(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V |
Produkt ist nicht verfügbar |
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TPCC8104,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V |
Produkt ist nicht verfügbar |
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TLP5772H(D4,E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; HIGH T Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Number of Channels: 1 |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP5772H(TP4,E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; WIDER Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 30V Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Number of Channels: 1 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP5772H(LF4,E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; WIDER Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Number of Channels: 1 |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP5772H(TP,E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; HIGH T Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Number of Channels: 1 |
Produkt ist nicht verfügbar |
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TLP5772H(D4LF4,E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; WIDER Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Part Status: Active Number of Channels: 1 |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP5772H(E | Toshiba Semiconductor and Storage |
Description: GATE DRIVE COUPLER; 2.5A; HIGH T Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Number of Channels: 1 |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B29FU,H3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO |
Produkt ist nicht verfügbar |
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DF2B29FU,H3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO |
auf Bestellung 5800 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR8BM30A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17 Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.285V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR8BM30A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17 Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.285V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
auf Bestellung 9970 Stücke: Lieferzeit 10-14 Tag (e) |
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CRS30I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 3A S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
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CRS30I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 3A S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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TA78DS10BP(6MB1,FM | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 10V 30MA LSTM |
Produkt ist nicht verfügbar |
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2SA2061(TE85L,F) | Toshiba Semiconductor and Storage |
Description: PB-F POWER TRANSISTOR TSM MOQ=30 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: TSM Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2061(TE85L,F) | Toshiba Semiconductor and Storage |
Description: PB-F POWER TRANSISTOR TSM MOQ=30 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: TSM Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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TTA1452B,S4X | Toshiba Semiconductor and Storage | Description: PB-F POWER MOSFET TRANSISTOR TO- |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP781(D4-Y-LF6,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
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TLP2958(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 15ns, 10ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 1 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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TPC6503(TE85L,F,M) | Toshiba Semiconductor and Storage | Description: TRANS NPN 30V 1.5A VS-6 |
Produkt ist nicht verfügbar |
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RN1301,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1301,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 11620 Stücke: Lieferzeit 10-14 Tag (e) |
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1SV279,H3F | Toshiba Semiconductor and Storage | Description: PB-F ESC VARICAP DIODE (HF), IR= |
Produkt ist nicht verfügbar |
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1SV279,H3F | Toshiba Semiconductor and Storage | Description: PB-F ESC VARICAP DIODE (HF), IR= |
Produkt ist nicht verfügbar |
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RN4904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1904,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1904,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4984,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4984,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN2904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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1SV308,L3F | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: ESC Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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1SV308,L3F | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: ESC Current - Max: 50 mA |
auf Bestellung 6336 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN27,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.7V I=200MA |
Produkt ist nicht verfügbar |
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TCR2LN27,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.7V I=200MA |
auf Bestellung 6555 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V IOUT=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.21V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V IOUT=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.21V @ 150mA Protection Features: Over Current |
auf Bestellung 7550 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V I=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V I=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
auf Bestellung 19535 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UM185A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
Produkt ist nicht verfügbar |
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TCR3UM185A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
auf Bestellung 9985 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UG25A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.327V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UG25A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.327V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
auf Bestellung 9028 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UM175A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUT Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.75V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.573V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UM175A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUT Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.75V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.573V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP512(NEMIC,TP1,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
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TLP512(NEMIC-LF1,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
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TLP512(NEMIC-TP1,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
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TLP512(NEMIC,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
CMF03(TE12L,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 900V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Description: DIODE GEN PURP 900V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
25+ | 0.7 EUR |
100+ | 0.48 EUR |
500+ | 0.36 EUR |
1000+ | 0.27 EUR |
TPCC8104,L1Q(CM |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8104,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
TLP5772H(D4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.92 EUR |
10+ | 2.62 EUR |
125+ | 2.02 EUR |
TLP5772H(TP4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.69 EUR |
TLP5772H(LF4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.24 EUR |
10+ | 2.83 EUR |
125+ | 2.18 EUR |
TLP5772H(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
TLP5772H(D4LF4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.24 EUR |
10+ | 2.83 EUR |
125+ | 2.18 EUR |
TLP5772H(E |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.92 EUR |
10+ | 2.62 EUR |
DF2B29FU,H3XHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Produkt ist nicht verfügbar
DF2B29FU,H3XHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
auf Bestellung 5800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
35+ | 0.51 EUR |
100+ | 0.29 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
TCR8BM30A,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.25 EUR |
TCR8BM30A,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
28+ | 0.63 EUR |
30+ | 0.59 EUR |
100+ | 0.47 EUR |
250+ | 0.44 EUR |
500+ | 0.37 EUR |
1000+ | 0.29 EUR |
2500+ | 0.26 EUR |
CRS30I30A(TE85L,QM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
CRS30I30A(TE85L,QM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
27+ | 0.67 EUR |
100+ | 0.4 EUR |
500+ | 0.37 EUR |
1000+ | 0.25 EUR |
TA78DS10BP(6MB1,FM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 30MA LSTM
Description: IC REG LINEAR 10V 30MA LSTM
Produkt ist nicht verfügbar
2SA2061(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
2SA2061(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
30+ | 0.6 EUR |
100+ | 0.36 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
TTA1452B,S4X |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Description: PB-F POWER MOSFET TRANSISTOR TO-
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.36 EUR |
10+ | 3.01 EUR |
RN1903,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
RN1903,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
40+ | 0.44 EUR |
100+ | 0.26 EUR |
500+ | 0.24 EUR |
1000+ | 0.17 EUR |
TLP781(D4-Y-LF6,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
TLP2958(D4-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
TPC6503(TE85L,F,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 1.5A VS-6
Description: TRANS NPN 30V 1.5A VS-6
Produkt ist nicht verfügbar
RN1301,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
6000+ | 0.11 EUR |
RN1301,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: AUTO AEC-Q SINGLE NPN , R1=4.7KO
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 11620 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
36+ | 0.49 EUR |
100+ | 0.28 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
1SV279,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Description: PB-F ESC VARICAP DIODE (HF), IR=
Produkt ist nicht verfügbar
1SV279,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Description: PB-F ESC VARICAP DIODE (HF), IR=
Produkt ist nicht verfügbar
RN4904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
RN4904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.58 EUR |
100+ | 0.33 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
RN1904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
RN1904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
37+ | 0.48 EUR |
100+ | 0.33 EUR |
500+ | 0.25 EUR |
1000+ | 0.18 EUR |
RN2904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.15 EUR |
8000+ | 0.14 EUR |
RN2904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.49 EUR |
100+ | 0.31 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
RN4904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.15 EUR |
8000+ | 0.14 EUR |
RN4904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.49 EUR |
100+ | 0.31 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
RN4984,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
RN4984,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.58 EUR |
100+ | 0.33 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
RN1904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.15 EUR |
8000+ | 0.14 EUR |
RN1904FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.49 EUR |
100+ | 0.31 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
RN2904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
RN2904,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.58 EUR |
100+ | 0.33 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
1SV308,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
Description: RF DIODE PIN 30V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
Produkt ist nicht verfügbar
1SV308,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
Description: RF DIODE PIN 30V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
auf Bestellung 6336 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
34+ | 0.52 EUR |
39+ | 0.45 EUR |
100+ | 0.29 EUR |
250+ | 0.24 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
2500+ | 0.13 EUR |
TCR2LN27,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
Description: LDO REG VOUT=2.7V I=200MA
Produkt ist nicht verfügbar
TCR2LN27,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
Description: LDO REG VOUT=2.7V I=200MA
auf Bestellung 6555 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2EN28,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EN28,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
auf Bestellung 7550 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
5000+ | 0.14 EUR |
TCR2LN28,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.13 EUR |
TCR2LN28,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
auf Bestellung 19535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
5000+ | 0.14 EUR |
TCR3UM185A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
TCR3UM185A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
29+ | 0.61 EUR |
32+ | 0.55 EUR |
100+ | 0.38 EUR |
250+ | 0.32 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
2500+ | 0.18 EUR |
5000+ | 0.17 EUR |
TCR3UG25A,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.21 EUR |
TCR3UG25A,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 9028 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
29+ | 0.62 EUR |
31+ | 0.57 EUR |
100+ | 0.43 EUR |
250+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
2500+ | 0.22 EUR |
TCR3UM175A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.15 EUR |
TCR3UM175A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.58 EUR |
34+ | 0.52 EUR |
100+ | 0.36 EUR |
250+ | 0.3 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2500+ | 0.17 EUR |
5000+ | 0.16 EUR |
TLP512(NEMIC,TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
TLP512(NEMIC-LF1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
TLP512(NEMIC-TP1,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
TLP512(NEMIC,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar