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TC75S51FUTE85LF TC75S51FUTE85LF Toshiba Semiconductor and Storage TC75S51F_datasheet_en_20190911.pdf?did=21004&prodName=TC75S51F Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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37+0.57 EUR
43+0.5 EUR
100+0.42 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.32 EUR
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RN4985,LXHF(CT RN4985,LXHF(CT Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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3000+0.13 EUR
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RN4985,LXHF(CT RN4985,LXHF(CT Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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RN1909,LF(CT RN1909,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1909,LF(CT RN1909,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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72+0.3 EUR
108+0.19 EUR
161+0.13 EUR
500+0.099 EUR
1000+0.089 EUR
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DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=13209&prodName=DF2B6.8M1ACT Description: TVS DIODE 5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TPC8125,LQ(S TPC8125,LQ(S Toshiba Semiconductor and Storage TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125 Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
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TPC8125,LQ(S TPC8125,LQ(S Toshiba Semiconductor and Storage TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125 Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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15+1.49 EUR
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500+0.77 EUR
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SSM3K16FV,L3F SSM3K16FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM3K16FV,L3F SSM3K16FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
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GT15J341,S4X GT15J341,S4X Toshiba Semiconductor and Storage docget.jsp?did=12748&prodName=GT15J341 Description: IGBT 600V 15A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 300V, 15A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
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TC75W54FU,LF TC75W54FU,LF Toshiba Semiconductor and Storage docget.jsp?did=21024&prodName=TC75W54FU Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Produkt ist nicht verfügbar
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TC75W54FU,LF TC75W54FU,LF Toshiba Semiconductor and Storage docget.jsp?did=21024&prodName=TC75W54FU Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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500+0.43 EUR
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2SK2962,T6F(J 2SK2962,T6F(J Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,F(J 2SK2962,F(J Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6WNLF(M 2SK2962,T6WNLF(M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962(TE6,F,M) 2SK2962(TE6,F,M) Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6WNLF(J 2SK2962,T6WNLF(J Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6F(M 2SK2962,T6F(M Toshiba Semiconductor and Storage 2SK2962_2009-09-29.pdf Description: MOSFET N-CH TO92MOD
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785(D4-Y-F6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TLP785(GRL-TP6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Produkt ist nicht verfügbar
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TLP9104A(TOYOG2TLF Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(ND-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(FD-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(TOJS-TL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(AST-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(HNE-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(OGI-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(NCN-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104A(TOYOGTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9104(TOYOG-TL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9104(OGI-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9104(SND-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9104(HNE-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9104(HITJ-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TK090N65Z,S1F TK090N65Z,S1F Toshiba Semiconductor and Storage docget.jsp?did=63656&prodName=TK090N65Z Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
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74LCX257FT 74LCX257FT Toshiba Semiconductor and Storage docget.jsp?did=15647&prodName=74LCX257FT Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LCX257FT 74LCX257FT Toshiba Semiconductor and Storage docget.jsp?did=15647&prodName=74LCX257FT Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6N37FE,LM SSM6N37FE,LM Toshiba Semiconductor and Storage SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N37FE,LM SSM6N37FE,LM Toshiba Semiconductor and Storage SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
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SSM6N36FE,LM SSM6N36FE,LM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N36FE,LM SSM6N36FE,LM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
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RN4907FE,LXHF(CT RN4907FE,LXHF(CT Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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RN4907FE,LXHF(CT RN4907FE,LXHF(CT Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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RN2907FE,LXHF(CT RN2907FE,LXHF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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4000+0.15 EUR
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RN2907FE,LXHF(CT RN2907FE,LXHF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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28+0.77 EUR
45+0.48 EUR
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500+0.23 EUR
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RN1907FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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4000+0.15 EUR
8000+0.14 EUR
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RN1907FE,LXHF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13065 Stücke:
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28+0.77 EUR
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500+0.23 EUR
1000+0.2 EUR
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TCR3DF29,LM(CT TCR3DF29,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF29 Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TCR3DF29,LM(CT TCR3DF29,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF29 Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 788 Stücke:
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TCR3DF295,LM(CT TCR3DF295,LM(CT Toshiba Semiconductor and Storage TCR3DF_Series_11-15-23.pdf Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
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TCR3DF295,LM(CT TCR3DF295,LM(CT Toshiba Semiconductor and Storage TCR3DF_Series_11-15-23.pdf Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 7630 Stücke:
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TLP3905(TPL,E TLP3905(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=15185&prodName=TLP3905 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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3000+1.23 EUR
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TLP3905(TPL,E TLP3905(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=15185&prodName=TLP3905 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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TLP3905(TPR,E TLP3905(TPR,E Toshiba Semiconductor and Storage docget.jsp?did=15185&prodName=TLP3905 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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TLP3905(TPR,E TLP3905(TPR,E Toshiba Semiconductor and Storage docget.jsp?did=15185&prodName=TLP3905 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 16604 Stücke:
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TLP191B(TPL,U,C,F) TLP191B(TPL,U,C,F) Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP191B(MBSTPL,C,F TLP191B(MBSTPL,C,F Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP191B(TOJSTLUC,F TLP191B(TOJSTLUC,F Toshiba Semiconductor and Storage TLP191B_6-17-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP290(V4GBTP,SE TLP290(V4GBTP,SE Toshiba Semiconductor and Storage docget.jsp?did=14154&prodName=TLP290(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2500 Stücke:
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2500+0.37 EUR
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TC75S51FUTE85LF TC75S51F_datasheet_en_20190911.pdf?did=21004&prodName=TC75S51F
TC75S51FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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25+0.86 EUR
37+0.57 EUR
43+0.5 EUR
100+0.42 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.32 EUR
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RN4985,LXHF(CT RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985
RN4985,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN4985,LXHF(CT RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985
RN4985,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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RN1909,LF(CT docget.jsp?did=18826&prodName=RN1908
RN1909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1909,LF(CT docget.jsp?did=18826&prodName=RN1908
RN1909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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72+0.3 EUR
108+0.19 EUR
161+0.13 EUR
500+0.099 EUR
1000+0.089 EUR
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DF2B6.8M1ACT,L3F docget.jsp?did=13209&prodName=DF2B6.8M1ACT
DF2B6.8M1ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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TPC8125,LQ(S TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125
TPC8125,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
auf Bestellung 2500 Stücke:
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TPC8125,LQ(S TPC8125_datasheet_en_20131101.pdf?did=1895&prodName=TPC8125
TPC8125,LQ(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4525 Stücke:
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11+1.93 EUR
15+1.49 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
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SSM3K16FV,L3F docget.jsp?did=591&prodName=SSM3K16FV
SSM3K16FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM3K16FV,L3F docget.jsp?did=591&prodName=SSM3K16FV
SSM3K16FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
auf Bestellung 104 Stücke:
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56+0.38 EUR
95+0.23 EUR
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GT15J341,S4X docget.jsp?did=12748&prodName=GT15J341
GT15J341,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 15A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 300V, 15A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 115 Stücke:
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4+5.28 EUR
50+2.63 EUR
100+2.37 EUR
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TC75W54FU,LF docget.jsp?did=21024&prodName=TC75W54FU
TC75W54FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Produkt ist nicht verfügbar
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TC75W54FU,LF docget.jsp?did=21024&prodName=TC75W54FU
TC75W54FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1081 Stücke:
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24+0.88 EUR
34+0.62 EUR
38+0.56 EUR
100+0.48 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.4 EUR
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2SK2962,T6F(J 2SK2962_2009-09-29.pdf
2SK2962,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,F(J 2SK2962_2009-09-29.pdf
2SK2962,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6WNLF(M 2SK2962_2009-09-29.pdf
2SK2962,T6WNLF(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962(TE6,F,M) 2SK2962_2009-09-29.pdf
2SK2962(TE6,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6WNLF(J 2SK2962_2009-09-29.pdf
2SK2962,T6WNLF(J
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK2962,T6F(M 2SK2962_2009-09-29.pdf
2SK2962,T6F(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP785(D4-Y-F6,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TLP785(GRL-TP6,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Produkt ist nicht verfügbar
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TLP9104A(TOYOG2TLF
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(ND-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(FD-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(TOJS-TL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(AST-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(HNE-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(OGI-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(NCN-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104A(TOYOGTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104(TOYOG-TL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104(OGI-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104(SND-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104(HNE-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9104(HITJ-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TK090N65Z,S1F docget.jsp?did=63656&prodName=TK090N65Z
TK090N65Z,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Produkt ist nicht verfügbar
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74LCX257FT docget.jsp?did=15647&prodName=74LCX257FT
74LCX257FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LCX257FT docget.jsp?did=15647&prodName=74LCX257FT
74LCX257FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6N37FE,LM SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE
SSM6N37FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N37FE,LM SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE
SSM6N37FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3995 Stücke:
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31+0.69 EUR
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SSM6N36FE,LM Mosfets_Prod_Guide.pdf
SSM6N36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6N36FE,LM Mosfets_Prod_Guide.pdf
SSM6N36FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 2258 Stücke:
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26+0.82 EUR
37+0.57 EUR
100+0.29 EUR
500+0.24 EUR
1000+0.18 EUR
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RN4907FE,LXHF(CT RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE
RN4907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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4000+0.15 EUR
8000+0.13 EUR
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RN4907FE,LXHF(CT RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE
RN4907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
30+0.71 EUR
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RN2907FE,LXHF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
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RN2907FE,LXHF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7390 Stücke:
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28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
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RN1907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
8000+0.14 EUR
12000+0.13 EUR
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RN1907FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13065 Stücke:
Lieferzeit 10-14 Tag (e)
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28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
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TCR3DF29,LM(CT docget.jsp?did=14709&prodName=TCR3DF29
TCR3DF29,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF29,LM(CT docget.jsp?did=14709&prodName=TCR3DF29
TCR3DF29,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 788 Stücke:
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22+0.99 EUR
29+0.74 EUR
33+0.64 EUR
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TCR3DF295,LM(CT TCR3DF_Series_11-15-23.pdf
TCR3DF295,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 6000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
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TCR3DF295,LM(CT TCR3DF_Series_11-15-23.pdf
TCR3DF295,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 7630 Stücke:
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23+0.92 EUR
31+0.69 EUR
35+0.61 EUR
100+0.39 EUR
250+0.32 EUR
500+0.26 EUR
1000+0.2 EUR
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TLP3905(TPL,E docget.jsp?did=15185&prodName=TLP3905
TLP3905(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.23 EUR
6000+1.18 EUR
9000+1.15 EUR
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TLP3905(TPL,E docget.jsp?did=15185&prodName=TLP3905
TLP3905(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 14937 Stücke:
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7+3.03 EUR
10+2.15 EUR
100+1.63 EUR
500+1.4 EUR
1000+1.32 EUR
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TLP3905(TPR,E docget.jsp?did=15185&prodName=TLP3905
TLP3905(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.23 EUR
6000+1.18 EUR
9000+1.15 EUR
15000+1.13 EUR
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TLP3905(TPR,E docget.jsp?did=15185&prodName=TLP3905
TLP3905(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 16604 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
10+2.15 EUR
100+1.63 EUR
500+1.4 EUR
1000+1.32 EUR
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TLP191B(TPL,U,C,F) TLP191B_6-17-19.pdf
TLP191B(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP191B(MBSTPL,C,F TLP191B_6-17-19.pdf
TLP191B(MBSTPL,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP191B(TOJSTLUC,F TLP191B_6-17-19.pdf
TLP191B(TOJSTLUC,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP290(V4GBTP,SE docget.jsp?did=14154&prodName=TLP290(SE
TLP290(V4GBTP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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