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TK10E80W,S1X Toshiba Semiconductor and Storage TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
auf Bestellung 50 Stücke:
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4+5.63 EUR
50+4.47 EUR
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DF2B36FU,H3XHF DF2B36FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=36248&prodName=DF2B36FU Description: TVS DIODE 28VWM 60VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.098 EUR
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DF2B36FU,H3XHF DF2B36FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=36248&prodName=DF2B36FU Description: TVS DIODE 28VWM 60VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4336 Stücke:
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62+0.29 EUR
113+0.16 EUR
500+0.14 EUR
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74LCX573FT 74LCX573FT Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
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2500+0.3 EUR
5000+0.27 EUR
7500+0.26 EUR
12500+0.24 EUR
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74LCX573FT 74LCX573FT Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
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22+0.81 EUR
27+0.67 EUR
100+0.51 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
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SSM6L12TU,LF SSM6L12TU,LF Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
Produkt ist nicht verfügbar
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SSM6L12TU,LF SSM6L12TU,LF Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 1980 Stücke:
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20+0.9 EUR
25+0.73 EUR
100+0.5 EUR
500+0.37 EUR
1000+0.28 EUR
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TLP9121A(KBDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(MBHAGBTLF Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9121A(YSKGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(NCNGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(FD-GBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(BYDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(OGIGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(ASTGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(HNEGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(CK-GBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(PSDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(TOYOGTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9121A(MURGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9121A(PASGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP701H(GEHC,F) Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701HF(D4MBSTP,F Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701H(D4-TP,F) Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701H(D4-MBSTP,F Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701HF(D4-TP,F) Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701HF(TP,F) Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701HF(F) Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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1SS226,LF 1SS226,LF Toshiba Semiconductor and Storage datasheet_en_20221122.pdf?did=3281 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS226,LF 1SS226,LF Toshiba Semiconductor and Storage datasheet_en_20221122.pdf?did=3281 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1878 Stücke:
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84+0.21 EUR
117+0.15 EUR
180+0.098 EUR
500+0.08 EUR
1000+0.075 EUR
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TCR3DG11,LF TCR3DG11,LF Toshiba Semiconductor and Storage datasheet_en_20231101.pdf?did=36247 Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
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TCR3DG11,LF TCR3DG11,LF Toshiba Semiconductor and Storage datasheet_en_20231101.pdf?did=36247 Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
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28+0.63 EUR
35+0.51 EUR
38+0.47 EUR
100+0.35 EUR
250+0.31 EUR
500+0.26 EUR
1000+0.19 EUR
2500+0.18 EUR
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TC4S66F,LF TC4S66F,LF Toshiba Semiconductor and Storage TC4S66F_datasheet_en_20140301.pdf?did=20150&prodName=TC4S66F Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
Mindestbestellmenge: 3000
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TC4S66F,LF TC4S66F,LF Toshiba Semiconductor and Storage TC4S66F_datasheet_en_20140301.pdf?did=20150&prodName=TC4S66F Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 38344 Stücke:
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53+0.33 EUR
63+0.28 EUR
67+0.27 EUR
100+0.24 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
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TPD2017FN,L1F(S Toshiba Semiconductor and Storage TPD2017FN_datasheet_en_20220629.pdf?did=142105&prodName=TPD2017FN Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Produkt ist nicht verfügbar
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TPD2017FN,L1F(S Toshiba Semiconductor and Storage TPD2017FN_datasheet_en_20220629.pdf?did=142105&prodName=TPD2017FN Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
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3+6.6 EUR
10+5 EUR
25+4.6 EUR
100+4.16 EUR
250+3.95 EUR
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TPD2015FN,L1F(S TPD2015FN,L1F(S Toshiba Semiconductor and Storage TPD2015FN_datasheet_en_20220704.pdf?did=142101&prodName=TPD2015FN Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
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TPD2015FN,L1F(S TPD2015FN,L1F(S Toshiba Semiconductor and Storage TPD2015FN_datasheet_en_20220704.pdf?did=142101&prodName=TPD2015FN Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Cut Tape (CT)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
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10+4.4 EUR
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GT50N322A GT50N322A Toshiba Semiconductor and Storage GT50N322A_datasheet_en_20080111.pdf?did=11080&prodName=GT50N322A Description: IGBT 1000V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
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3+8.54 EUR
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TA58M08S(LS2FJT,AQ TA58M08S(LS2FJT,AQ Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 8V 500MA TO220NIS
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TA58M08S(FJTN,QM) TA58M08S(FJTN,QM) Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 8V 500MA TO220NIS
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TA58M06S,MTDQ(M TA58M06S,MTDQ(M Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 6V 500MA TO220NIS
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TA58M06S,MTDQ(J TA58M06S,MTDQ(J Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 6V 500MA TO220NIS
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TA58M08S(FJTN,AQ) TA58M08S(FJTN,AQ) Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 8V 500MA TO220NIS
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TA58M12S,Q(J TA58M12S,Q(J Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 12V 500MA TO220NIS
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TA58M06S,SUMISQ(M TA58M06S,SUMISQ(M Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 6V 500MA TO220NIS
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TLP700HF(D4MBSTP,F Toshiba Semiconductor and Storage TLP700HF_Rev6.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP700HF(D4-TP,F) Toshiba Semiconductor and Storage TLP700HF_Rev6.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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2SA2060(TE12L,F) 2SA2060(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20447&prodName=2SA2060 Description: TRANS PNP 50V 2A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2060(TE12L,F) 2SA2060(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20447&prodName=2SA2060 Description: TRANS PNP 50V 2A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 33 Stücke:
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14+1.34 EUR
22+0.84 EUR
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TMPM366FYFG Toshiba Semiconductor and Storage docget.jsp?did=12648&prodName=TMPM366FYFG Description: IC MCU 32BIT 256KB FLASH 100LQFP
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TCD1103GFG Toshiba Semiconductor and Storage TCD1103GFG.pdf Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
auf Bestellung 2 Stücke:
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1+32.21 EUR
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TB67H450FNG,EL TB67H450FNG,EL Toshiba Semiconductor and Storage TB67H450FNG_datasheet_en_20201126.pdf?did=65346&prodName=TB67H450FNG Description: 3A/50V 1CH BRUSHED
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 3500 Stücke:
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3500+0.94 EUR
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2SC6026CT-GR,L3F 2SC6026CT-GR,L3F Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 40000 Stücke:
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10000+0.076 EUR
20000+0.069 EUR
30000+0.066 EUR
Mindestbestellmenge: 10000
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2SC6026CT-GR,L3F 2SC6026CT-GR,L3F Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 52600 Stücke:
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40+0.44 EUR
65+0.27 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.084 EUR
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CSLZ5V6,L3F Toshiba Semiconductor and Storage CSLZ10V_datasheet_en_20220524.pdf?did=142902&prodName=CSLZ10V Description: 5.6V ZNR DIODE SOD-962 OVP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ5V6,L3F Toshiba Semiconductor and Storage CSLZ10V_datasheet_en_20220524.pdf?did=142902&prodName=CSLZ10V Description: 5.6V ZNR DIODE SOD-962 OVP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
auf Bestellung 9340 Stücke:
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53+0.33 EUR
76+0.23 EUR
154+0.11 EUR
500+0.095 EUR
1000+0.066 EUR
2000+0.057 EUR
5000+0.053 EUR
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TBD62183AFWG,EL TBD62183AFWG,EL Toshiba Semiconductor and Storage TBD62183AFWG_datasheet_en_20160715.pdf?did=53652&prodName=TBD62183AFWG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 2.8V ~ 25V
Current - Output (Max): 50mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 14000 Stücke:
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1000+0.78 EUR
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TBD62183AFWG,EL TBD62183AFWG,EL Toshiba Semiconductor and Storage TBD62183AFWG_datasheet_en_20160715.pdf?did=53652&prodName=TBD62183AFWG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 2.8V ~ 25V
Current - Output (Max): 50mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 15482 Stücke:
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8+2.36 EUR
12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
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RN2301,LXHF RN2301,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.099 EUR
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TK10E80W,S1X TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
auf Bestellung 50 Stücke:
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Anzahl Preis
4+5.63 EUR
50+4.47 EUR
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DF2B36FU,H3XHF docget.jsp?did=36248&prodName=DF2B36FU
DF2B36FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.098 EUR
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DF2B36FU,H3XHF docget.jsp?did=36248&prodName=DF2B36FU
DF2B36FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
62+0.29 EUR
113+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
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74LCX573FT docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.3 EUR
5000+0.27 EUR
7500+0.26 EUR
12500+0.24 EUR
Mindestbestellmenge: 2500
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74LCX573FT docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 16482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
22+0.81 EUR
27+0.67 EUR
100+0.51 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
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SSM6L12TU,LF docget.jsp?did=22374&prodName=SSM6L12TU
SSM6L12TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6L12TU,LF docget.jsp?did=22374&prodName=SSM6L12TU
SSM6L12TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
25+0.73 EUR
100+0.5 EUR
500+0.37 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(KBDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(MBHAGBTLF
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(YSKGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(NCNGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(FD-GBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(BYDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(OGIGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(ASTGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(HNEGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(CK-GBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(PSDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(TOYOGTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(MURGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP9121A(PASGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(GEHC,F) TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(D4MBSTP,F TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(D4-TP,F) TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(D4-MBSTP,F TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(D4-TP,F) TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(TP,F) TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(F) TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS226,LF datasheet_en_20221122.pdf?did=3281
1SS226,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS226,LF datasheet_en_20221122.pdf?did=3281
1SS226,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
117+0.15 EUR
180+0.098 EUR
500+0.08 EUR
1000+0.075 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
TCR3DG11,LF datasheet_en_20231101.pdf?did=36247
TCR3DG11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR3DG11,LF datasheet_en_20231101.pdf?did=36247
TCR3DG11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
auf Bestellung 4893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
35+0.51 EUR
38+0.47 EUR
100+0.35 EUR
250+0.31 EUR
500+0.26 EUR
1000+0.19 EUR
2500+0.18 EUR
Mindestbestellmenge: 28
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TC4S66F,LF TC4S66F_datasheet_en_20140301.pdf?did=20150&prodName=TC4S66F
TC4S66F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
Mindestbestellmenge: 3000
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TC4S66F,LF TC4S66F_datasheet_en_20140301.pdf?did=20150&prodName=TC4S66F
TC4S66F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 38344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
63+0.28 EUR
67+0.27 EUR
100+0.24 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 53
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TPD2017FN,L1F(S TPD2017FN_datasheet_en_20220629.pdf?did=142105&prodName=TPD2017FN
Hersteller: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPD2017FN,L1F(S TPD2017FN_datasheet_en_20220629.pdf?did=142105&prodName=TPD2017FN
Hersteller: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5 EUR
25+4.6 EUR
100+4.16 EUR
250+3.95 EUR
500+3.82 EUR
Mindestbestellmenge: 3
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TPD2015FN,L1F(S TPD2015FN_datasheet_en_20220704.pdf?did=142101&prodName=TPD2015FN
TPD2015FN,L1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Produkt ist nicht verfügbar
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TPD2015FN,L1F(S TPD2015FN_datasheet_en_20220704.pdf?did=142101&prodName=TPD2015FN
TPD2015FN,L1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Cut Tape (CT)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
auf Bestellung 1618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+4.4 EUR
25+4.04 EUR
100+3.64 EUR
250+3.45 EUR
500+3.34 EUR
1000+3.24 EUR
Mindestbestellmenge: 4
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GT50N322A GT50N322A_datasheet_en_20080111.pdf?did=11080&prodName=GT50N322A
GT50N322A
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
Mindestbestellmenge: 3
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TA58M08S(LS2FJT,AQ TA58MxxS_2009-09-30.pdf
TA58M08S(LS2FJT,AQ
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M08S(FJTN,QM) TA58MxxS_2009-09-30.pdf
TA58M08S(FJTN,QM)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M06S,MTDQ(M TA58MxxS_2009-09-30.pdf
TA58M06S,MTDQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M06S,MTDQ(J TA58MxxS_2009-09-30.pdf
TA58M06S,MTDQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M08S(FJTN,AQ) TA58MxxS_2009-09-30.pdf
TA58M08S(FJTN,AQ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M12S,Q(J TA58MxxS_2009-09-30.pdf
TA58M12S,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 500MA TO220NIS
Produkt ist nicht verfügbar
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TA58M06S,SUMISQ(M TA58MxxS_2009-09-30.pdf
TA58M06S,SUMISQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 500MA TO220NIS
Produkt ist nicht verfügbar
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TLP700HF(D4MBSTP,F TLP700HF_Rev6.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP700HF(D4-TP,F) TLP700HF_Rev6.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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2SA2060(TE12L,F) docget.jsp?did=20447&prodName=2SA2060
2SA2060(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2060(TE12L,F) docget.jsp?did=20447&prodName=2SA2060
2SA2060(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.84 EUR
Mindestbestellmenge: 14
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TMPM366FYFG docget.jsp?did=12648&prodName=TMPM366FYFG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Produkt ist nicht verfügbar
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TCD1103GFG TCD1103GFG.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.21 EUR
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TB67H450FNG,EL TB67H450FNG_datasheet_en_20201126.pdf?did=65346&prodName=TB67H450FNG
TB67H450FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 3A/50V 1CH BRUSHED
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.94 EUR
Mindestbestellmenge: 3500
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2SC6026CT-GR,L3F docget.jsp?did=713&prodName=2SC6026CT
2SC6026CT-GR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.076 EUR
20000+0.069 EUR
30000+0.066 EUR
Mindestbestellmenge: 10000
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2SC6026CT-GR,L3F docget.jsp?did=713&prodName=2SC6026CT
2SC6026CT-GR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 52600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.084 EUR
Mindestbestellmenge: 40
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CSLZ5V6,L3F CSLZ10V_datasheet_en_20220524.pdf?did=142902&prodName=CSLZ10V
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6V ZNR DIODE SOD-962 OVP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ5V6,L3F CSLZ10V_datasheet_en_20220524.pdf?did=142902&prodName=CSLZ10V
Hersteller: Toshiba Semiconductor and Storage
Description: 5.6V ZNR DIODE SOD-962 OVP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
auf Bestellung 9340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
154+0.11 EUR
500+0.095 EUR
1000+0.066 EUR
2000+0.057 EUR
5000+0.053 EUR
Mindestbestellmenge: 53
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TBD62183AFWG,EL TBD62183AFWG_datasheet_en_20160715.pdf?did=53652&prodName=TBD62183AFWG
TBD62183AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 2.8V ~ 25V
Current - Output (Max): 50mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.78 EUR
Mindestbestellmenge: 1000
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TBD62183AFWG,EL TBD62183AFWG_datasheet_en_20160715.pdf?did=53652&prodName=TBD62183AFWG
TBD62183AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 2.8V ~ 25V
Current - Output (Max): 50mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
auf Bestellung 15482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
Mindestbestellmenge: 8
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RN2301,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2301,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
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