Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13063) > Seite 182 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TCR2EN285,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.85V IOUT=200MA |
Produkt ist nicht verfügbar |
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TCR2EN285,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.85V IOUT=200MA |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN32,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.2V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN32,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.2V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN08,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=0.8V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN08,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=0.8V I=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN31,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.1V I=200MA |
Produkt ist nicht verfügbar |
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TCR2LN31,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.1V I=200MA |
auf Bestellung 9400 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN21,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.1V IOUT=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN21,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=2.1V IOUT=200MA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.46V @ 150mA Protection Features: Over Current |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.46V @ 150mA Protection Features: Over Current |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
auf Bestellung 5500 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74HC157AP(F) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 4 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-DIP |
Produkt ist nicht verfügbar |
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GT40QR21(STA1,E,D | Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 290µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 230 W |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHC174FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 120 MHz Input Capacitance: 4 pF Supplier Device Package: 16-TSSOPB Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF Number of Bits per Element: 6 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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74LCX374FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
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TLP2710(E | Toshiba Semiconductor and Storage |
Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.9V (Max) Data Rate: 5MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 1 Current - Output / Channel: 10 mA |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK22925G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E |
Produkt ist nicht verfügbar |
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TCK22925G,LF | Toshiba Semiconductor and Storage | Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E |
Produkt ist nicht verfügbar |
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74HCT4053D | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT X 3 110OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 110Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 4.5V ~ 5.5V Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 45ns, 59ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT4053D | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT X 3 110OHM 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 110Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 4.5V ~ 5.5V Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 45ns, 59ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
auf Bestellung 6878 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7WH32FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE OR 2CH 2-INP SM8 |
Produkt ist nicht verfügbar |
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BAV70,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 100V 215MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
Produkt ist nicht verfügbar |
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BAV70,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 100V 215MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 1524 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP785(TELS,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER TRANS OUT |
Produkt ist nicht verfügbar |
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CUZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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CUZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
auf Bestellung 8063 Stücke: Lieferzeit 10-14 Tag (e) |
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TK25S06N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 25A DPAK |
Produkt ist nicht verfügbar |
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TK25S06N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 25A DPAK |
Produkt ist nicht verfügbar |
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TK25S06N1L,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 25A DPAK |
Produkt ist nicht verfügbar |
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BAS516,H3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 100V 250MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS516,H3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 100V 250MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 7160 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms |
Produkt ist nicht verfügbar |
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RN2131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms |
auf Bestellung 7900 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP293-4(GBTPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP293-4(GBTPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 2383 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP187(TPR,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SOP Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP187(TPR,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SOP Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3910 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H450AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC BRUSHED MOTOR DRVR 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67H450AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC BRUSHED MOTOR DRVR 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
auf Bestellung 33293 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP188(GB,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR COUPLER; DC INPUT,VCE Packaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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TLP628M(LF5,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; GULL WIN Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628M(LF1,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; GULL WIN Packaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628M(GB-LF1,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; GULL WIN Packaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628MF(GB,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4 WIDE CREEPAGE; Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628M(GB,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628M(GB-LF5,E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; GULL WIN Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP628M(E | Toshiba Semiconductor and Storage |
Description: TR COUPLER; DIP4; ROHS; Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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TK110E65Z,S1X | Toshiba Semiconductor and Storage |
Description: 650V DTMOS VI TO-220 110MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2105,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM, |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2105,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM, |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2106,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM, |
Produkt ist nicht verfügbar |
TCR2EN285,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
Produkt ist nicht verfügbar
TCR2EN285,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2LN32,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.2V I=200MA
Description: LDO REG VOUT=3.2V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.13 EUR |
TCR2LN32,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.2V I=200MA
Description: LDO REG VOUT=3.2V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
34+ | 0.53 EUR |
37+ | 0.48 EUR |
100+ | 0.33 EUR |
250+ | 0.28 EUR |
500+ | 0.23 EUR |
1000+ | 0.17 EUR |
2500+ | 0.16 EUR |
5000+ | 0.15 EUR |
TCR2LN11,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
TCR2LN11,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2LN08,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
TCR2LN08,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2LN31,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
Produkt ist nicht verfügbar
TCR2LN31,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
auf Bestellung 9400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2EN21,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.1V IOUT=200MA
Description: LDO REG VOUT=2.1V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
TCR2EN21,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.1V IOUT=200MA
Description: LDO REG VOUT=2.1V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
41+ | 0.43 EUR |
100+ | 0.3 EUR |
250+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
TCR2LN09,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.13 EUR |
TCR2LN09,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
5000+ | 0.14 EUR |
MSZ30V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.09 EUR |
MSZ30V,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
48+ | 0.37 EUR |
100+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
TC74HC157AP(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Produkt ist nicht verfügbar
GT40QR21(STA1,E,D |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.68 EUR |
25+ | 4.5 EUR |
74VHC174FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Number of Bits per Element: 6
Grade: Automotive
Qualification: AEC-Q100
Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Number of Bits per Element: 6
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
74LCX374FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
TLP2710(E |
Hersteller: Toshiba Semiconductor and Storage
Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: HI SPEED LOGIC OUTPUT OPTOCOUPLE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.59 EUR |
11+ | 1.64 EUR |
125+ | 1.21 EUR |
TCK22925G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Produkt ist nicht verfügbar
TCK22925G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Produkt ist nicht verfügbar
74HCT4053D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.23 EUR |
74HCT4053D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 6878 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
27+ | 0.67 EUR |
29+ | 0.61 EUR |
100+ | 0.45 EUR |
250+ | 0.41 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
TC7WH32FU,LJ(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP SM8
Description: IC GATE OR 2CH 2-INP SM8
Produkt ist nicht verfügbar
BAV70,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 100V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE ARRAY GP 100V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
BAV70,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 100V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE ARRAY GP 100V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
77+ | 0.23 EUR |
142+ | 0.12 EUR |
500+ | 0.098 EUR |
1000+ | 0.068 EUR |
TLP785(TELS,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Description: PHOTOCOUPLER TRANS OUT
Produkt ist nicht verfügbar
CUZ30V,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.093 EUR |
6000+ | 0.087 EUR |
CUZ30V,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 8063 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
47+ | 0.38 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
TK25S06N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
TK25S06N1L,LXHQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
TK25S06N1L,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
BAS516,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.049 EUR |
BAS516,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 7160 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
87+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
2000+ | 0.049 EUR |
RN1131MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.046 EUR |
RN1131MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
87+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
2000+ | 0.049 EUR |
RN2131MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
RN2131MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.28 EUR |
87+ | 0.2 EUR |
163+ | 0.11 EUR |
500+ | 0.085 EUR |
1000+ | 0.059 EUR |
2000+ | 0.049 EUR |
TLP293-4(GBTPR,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.89 EUR |
TLP293-4(GBTPR,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.64 EUR |
11+ | 1.66 EUR |
100+ | 1.23 EUR |
500+ | 1.13 EUR |
1000+ | 0.93 EUR |
TLP187(TPR,E |
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
TLP187(TPR,E |
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
17+ | 1.04 EUR |
100+ | 0.77 EUR |
500+ | 0.71 EUR |
1000+ | 0.58 EUR |
2SC2712-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SC2712-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
79+ | 0.22 EUR |
163+ | 0.11 EUR |
500+ | 0.09 EUR |
TB67H450AFNG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3500+ | 1.12 EUR |
7000+ | 1.06 EUR |
10500+ | 1.02 EUR |
TB67H450AFNG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 33293 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.64 EUR |
10+ | 2.36 EUR |
25+ | 2.24 EUR |
100+ | 1.84 EUR |
250+ | 1.72 EUR |
500+ | 1.52 EUR |
1000+ | 1.2 EUR |
TLP188(GB,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
TLP628M(LF5,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
TLP628M(LF1,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
TLP628M(GB-LF1,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
100+ | 0.61 EUR |
TLP628MF(GB,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4 WIDE CREEPAGE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4 WIDE CREEPAGE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
TLP628M(GB,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
100+ | 0.61 EUR |
TLP628M(GB-LF5,E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS; GULL WIN
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
100+ | 0.61 EUR |
TLP628M(E |
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
19+ | 0.93 EUR |
100+ | 0.61 EUR |
TK110E65Z,S1X |
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 110MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: 650V DTMOS VI TO-220 110MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.64 EUR |
RN2105,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
RN2105,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.26 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
RN2106,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
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