Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Seite 178 nach 227

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 173 174 175 176 177 178 179 180 181 182 183 198 220 227  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN2102MFV,L3XHF(CT RN2102MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LXHF(CT RN2101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LXHF(CT RN2101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LF(CT RN2101,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT RN2104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT RN2104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2107MFV,L3F(CT RN2107MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5884 Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107MFV,L3F(CT RN2107MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5884 Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 7080 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
113+0.19 EUR
183+0.12 EUR
500+0.083 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2108,LF(CT RN2108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2108,LF(CT RN2108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
60+0.36 EUR
113+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CT RN2107,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CT RN2107,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2109,LF(CT RN2109,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2109 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2109,LF(CT RN2109,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2109 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TTC015B,Q TTC015B,Q Toshiba Semiconductor and Storage docget.jsp?did=28833&prodName=TTC015B Description: TRANS NPN 80V 2A TO-126N
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-126N
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tray
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
18+1.18 EUR
250+0.67 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2903,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2903,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TAR5S16U(TE85L,F) TAR5S16U(TE85L,F) Toshiba Semiconductor and Storage TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U Description: IC REG LINEAR 1.6V 200MA UFV
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TAR5S16U(TE85L,F) TAR5S16U(TE85L,F) Toshiba Semiconductor and Storage TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U Description: IC REG LINEAR 1.6V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
20+1.07 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP9148J(YZK-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(TPR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(D4-LF4,E TLP5752(D4-LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(LF4,E TLP5752(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+3.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(LF4,E TLP5752H(LF4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.08 EUR
10+2.93 EUR
125+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4LF4,E TLP5752H(D4LF4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.08 EUR
10+2.93 EUR
125+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Packaging: Cut Tape (CT)
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
auf Bestellung 5710 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
23+0.93 EUR
28+0.77 EUR
100+0.6 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 1719 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.99 EUR
10+3.88 EUR
50+2.98 EUR
100+2.69 EUR
500+2.18 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG09ACP18TA MG09ACP18TA Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG09ACP18TE MG09ACP18TE Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V/12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.39 EUR
6000+0.38 EUR
15000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 66352 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
33+0.64 EUR
37+0.57 EUR
100+0.49 EUR
250+0.45 EUR
500+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TTC011B,Q TTC011B,Q Toshiba Semiconductor and Storage docget.jsp?did=35681&prodName=TTC011B Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.44 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.3 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
10+2.73 EUR
100+2.13 EUR
500+1.75 EUR
1000+1.38 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R8A08QM,S4X TK6R8A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70423&prodName=TK6R8A08QM Description: UMOS10 TO-220SIS 80V 6.8MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK170V65Z,LQ TK170V65Z,LQ Toshiba Semiconductor and Storage TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4933 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.13 EUR
10+6.05 EUR
100+4.28 EUR
500+3.72 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.95 EUR
12+1.87 EUR
50+1.39 EUR
100+1.24 EUR
500+0.98 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(TP,E TLP5752H(TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4-TP,E TLP5752H(D4-TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(E TLP5752H(E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2958(D4-MBT1,F) TLP2958(D4-MBT1,F) Toshiba Semiconductor and Storage TLP2958_Rev3.0_11-30-15.pdf Description: OPTOISOLTR 5KV PUSH PULL 8-DIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB67H401FTG,EL TB67H401FTG,EL Toshiba Semiconductor and Storage TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+4.25 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.83 EUR
10+4.47 EUR
100+3.13 EUR
500+2.56 EUR
1000+2.37 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK090E65Z,S1X TK090E65Z,S1X Toshiba Semiconductor and Storage TK090E65Z_datasheet_en_20220201.pdf?did=139849&prodName=TK090E65Z Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.83 EUR
10+7.93 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN36,LF(SE TCR2LN36,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN36,LF(SE TCR2LN36,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9371 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
98+0.21 EUR
111+0.19 EUR
130+0.17 EUR
250+0.14 EUR
1000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN115,LF(SE TCR2LN115,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN115,LF(SE TCR2LN115,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
37+0.57 EUR
41+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC4066D 74HC4066D Toshiba Semiconductor and Storage 74HC4066D_datasheet_en_20201124.pdf?did=55443&prodName=74HC4066D Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 15549 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
40+0.52 EUR
45+0.46 EUR
100+0.4 EUR
250+0.38 EUR
500+0.36 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67H451AFNG,EL TB67H451AFNG,EL Toshiba Semiconductor and Storage TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
3500+1.13 EUR
7000+1.11 EUR
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67H451AFNG,EL TB67H451AFNG,EL Toshiba Semiconductor and Storage TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
auf Bestellung 10110 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
13+1.7 EUR
25+1.54 EUR
100+1.37 EUR
250+1.29 EUR
500+1.23 EUR
1000+1.19 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7WH00FU,LJ(CT TC7WH00FU,LJ(CT Toshiba Semiconductor and Storage TC7WH00FU_datasheet_en_20200205.pdf?did=20115&prodName=TC7WH00FU Description: IC GATE NAND 2CH 2-INP 8SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 8-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 13740 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2102MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2102MFV
RN2102MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LXHF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LXHF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
47+0.45 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2101,LF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2107MFV,L3F(CT docget.jsp?did=5884
RN2107MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107MFV,L3F(CT docget.jsp?did=5884
RN2107MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 7080 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
113+0.19 EUR
183+0.12 EUR
500+0.083 EUR
1000+0.073 EUR
2000+0.064 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2108,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2108,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
60+0.36 EUR
113+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2109,LF(CT docget.jsp?did=18845&prodName=RN2109
RN2109,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2109,LF(CT docget.jsp?did=18845&prodName=RN2109
RN2109,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TTC015B,Q docget.jsp?did=28833&prodName=TTC015B
TTC015B,Q
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A TO-126N
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-126N
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tray
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
18+1.18 EUR
250+0.67 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TAR5S16U(TE85L,F) TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U
TAR5S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TAR5S16U(TE85L,F) TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U
TAR5S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
20+1.07 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP9148J(YZK-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(D4-LF4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(LF4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+3.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(LF4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+2.93 EUR
125+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4LF4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(D4LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+2.93 EUR
125+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Packaging: Cut Tape (CT)
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
auf Bestellung 5710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
23+0.93 EUR
28+0.77 EUR
100+0.6 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 1719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.99 EUR
10+3.88 EUR
50+2.98 EUR
100+2.69 EUR
500+2.18 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG09ACP18TA p_l_mg09aca16tay_210202072836_1_0_0e.pdf
MG09ACP18TA
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG09ACP18TE p_l_mg09aca16tay_210202072836_1_0_0e.pdf
MG09ACP18TE
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V/12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
6000+0.38 EUR
15000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 66352 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
37+0.57 EUR
100+0.49 EUR
250+0.45 EUR
500+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TTC011B,Q docget.jsp?did=35681&prodName=TTC011B
TTC011B,Q
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.44 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.3 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
10+2.73 EUR
100+2.13 EUR
500+1.75 EUR
1000+1.38 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R8A08QM,S4X docget.jsp?did=70423&prodName=TK6R8A08QM
TK6R8A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK170V65Z,LQ TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z
TK170V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4933 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
10+6.05 EUR
100+4.28 EUR
500+3.72 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R7P06PL,RQ docget.jsp?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK6R7P06PL,RQ docget.jsp?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
12+1.87 EUR
50+1.39 EUR
100+1.24 EUR
500+0.98 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4-TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2958(D4-MBT1,F) TLP2958_Rev3.0_11-30-15.pdf
TLP2958(D4-MBT1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 8-DIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB67H401FTG,EL TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG
TB67H401FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+4.25 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.83 EUR
10+4.47 EUR
100+3.13 EUR
500+2.56 EUR
1000+2.37 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK090E65Z,S1X TK090E65Z_datasheet_en_20220201.pdf?did=139849&prodName=TK090E65Z
TK090E65Z,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.83 EUR
10+7.93 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN36,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN36,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN36,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN36,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
98+0.21 EUR
111+0.19 EUR
130+0.17 EUR
250+0.14 EUR
1000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN115,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.14 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN115,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
37+0.57 EUR
41+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74HC4066D 74HC4066D_datasheet_en_20201124.pdf?did=55443&prodName=74HC4066D
74HC4066D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 15549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
45+0.46 EUR
100+0.4 EUR
250+0.38 EUR
500+0.36 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67H451AFNG,EL TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG
TB67H451AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3500+1.13 EUR
7000+1.11 EUR
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TB67H451AFNG,EL TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG
TB67H451AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
auf Bestellung 10110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
13+1.7 EUR
25+1.54 EUR
100+1.37 EUR
250+1.29 EUR
500+1.23 EUR
1000+1.19 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7WH00FU,LJ(CT TC7WH00FU_datasheet_en_20200205.pdf?did=20115&prodName=TC7WH00FU
TC7WH00FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP 8SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 8-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 13740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 154 173 174 175 176 177 178 179 180 181 182 183 198 220 227  [ Nächste Seite >> ]