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TK5A60W5,S5VX TK5A60W5,S5VX Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Produkt ist nicht verfügbar
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RN2425(TE85L,F) RN2425(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2425 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R2 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
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RN2425(TE85L,F) RN2425(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2425 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R2 Only
auf Bestellung 11279 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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CMS08(TE12L,Q,M) CMS08(TE12L,Q,M) Toshiba Semiconductor and Storage CMS08_datasheet_en_20190307.pdf?did=3142&prodName=CMS08 Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Produkt ist nicht verfügbar
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TCR3RM285A,LF(SE TCR3RM285A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.85V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM285A,LF(SE TCR3RM285A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.85V 300MA 4DFNC
auf Bestellung 8940 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
28+0.65 EUR
30+0.60 EUR
100+0.44 EUR
250+0.40 EUR
500+0.33 EUR
1000+0.25 EUR
2500+0.23 EUR
5000+0.21 EUR
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TCR3RM09A,LF(SE TCR3RM09A,LF(SE Toshiba Semiconductor and Storage docget.jsp?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM09A,LF(SE TCR3RM09A,LF(SE Toshiba Semiconductor and Storage docget.jsp?did=69842&prodName=TCR3RM33A Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
auf Bestellung 9955 Stücke:
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17+1.09 EUR
27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.30 EUR
1000+0.27 EUR
2500+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 17
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TTD1409B,S4X TTD1409B,S4X Toshiba Semiconductor and Storage TTD1409B_datasheet_en_20150806.pdf?did=13852&prodName=TTD1409B Description: TRANS NPN DARL 400V 6A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V
Supplier Device Package: TO-220SIS
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 1 Stücke:
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2SC3303-Y(T6L1,NQ) 2SC3303-Y(T6L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=20516&prodName=2SC3303 Description: TRANS NPN 80V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC3303-Y(T6L1,NQ) 2SC3303-Y(T6L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=20516&prodName=2SC3303 Description: TRANS NPN 80V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.03 EUR
10+1.93 EUR
100+1.30 EUR
500+1.03 EUR
Mindestbestellmenge: 6
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2SA1201-Y(TE12L,ZC 2SA1201-Y(TE12L,ZC Toshiba Semiconductor and Storage docget.jsp?did=20286&prodName=2SA1201 Description: TRANS PNP 120V 0.8A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 885 Stücke:
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14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
Mindestbestellmenge: 14
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74VHC165FT 74VHC165FT Toshiba Semiconductor and Storage docget.jsp?did=14003&prodName=74VHC165FT Description: IC REG SHIFT PISO 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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2500+0.21 EUR
Mindestbestellmenge: 2500
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74VHC165FT 74VHC165FT Toshiba Semiconductor and Storage docget.jsp?did=14003&prodName=74VHC165FT Description: IC REG SHIFT PISO 8BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7806 Stücke:
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35+0.51 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 35
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GT40WR21,Q GT40WR21,Q Toshiba Semiconductor and Storage GT40WR21_datasheet_en_20180423.pdf?did=13219&prodName=GT40WR21 Description: IGBT 1350V 40A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 375 W
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.04 EUR
10+13.21 EUR
25+11.68 EUR
100+9.93 EUR
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74LCX08FT 74LCX08FT Toshiba Semiconductor and Storage docget.jsp?did=15274&prodName=74LCX08FT Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
auf Bestellung 2300 Stücke:
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74LCX08FT 74LCX08FT Toshiba Semiconductor and Storage docget.jsp?did=15274&prodName=74LCX08FT Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
auf Bestellung 2482 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
56+0.32 EUR
63+0.28 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.20 EUR
Mindestbestellmenge: 38
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TLP250H(TP1,F) TLP250H(TP1,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2.5 A
auf Bestellung 1500 Stücke:
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1500+1.22 EUR
Mindestbestellmenge: 1500
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TLP250H(TP1,F) TLP250H(TP1,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2.5 A
auf Bestellung 1787 Stücke:
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7+2.85 EUR
10+2.03 EUR
100+1.54 EUR
500+1.33 EUR
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BAS316,H3F BAS316,H3F Toshiba Semiconductor and Storage docget.jsp?did=55416&prodName=BAS316 Description: DIODE STANDARD 100V 250MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: USC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
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BAS316,H3F BAS316,H3F Toshiba Semiconductor and Storage docget.jsp?did=55416&prodName=BAS316 Description: DIODE STANDARD 100V 250MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: USC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
150+0.12 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 84
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74HC4053D 74HC4053D Toshiba Semiconductor and Storage 74HC4053D_datasheet_en_20201124.pdf?did=54976&prodName=74HC4053D Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 2500 Stücke:
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2500+0.19 EUR
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74HC4053D 74HC4053D Toshiba Semiconductor and Storage 74HC4053D_datasheet_en_20201124.pdf?did=54976&prodName=74HC4053D Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 2697 Stücke:
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38+0.48 EUR
54+0.33 EUR
60+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 38
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BAV99,LM BAV99,LM Toshiba Semiconductor and Storage docget.jsp?did=55420&prodName=BAV99 Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
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BAV99,LM BAV99,LM Toshiba Semiconductor and Storage docget.jsp?did=55420&prodName=BAV99 Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 1762 Stücke:
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63+0.28 EUR
91+0.20 EUR
182+0.10 EUR
500+0.08 EUR
1000+0.06 EUR
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TC74HC126AP(F) TC74HC126AP(F) Toshiba Semiconductor and Storage docget.jsp?did=8783&prodName=TC74HC125AF Description: IC BUFFER NON-INVERT 6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-DIP
Part Status: Active
Produkt ist nicht verfügbar
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RN2704,LF RN2704,LF Toshiba Semiconductor and Storage RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704 Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000
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RN2704,LF RN2704,LF Toshiba Semiconductor and Storage RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704 Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
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RN2910,LF(CT RN2910,LF(CT Toshiba Semiconductor and Storage RN2910_datasheet_en_20211223.pdf?did=18911&prodName=RN2910 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000
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RN2910,LF(CT RN2910,LF(CT Toshiba Semiconductor and Storage RN2910_datasheet_en_20211223.pdf?did=18911&prodName=RN2910 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
Mindestbestellmenge: 36
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RN2309,LXHF RN2309,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2309,LXHF RN2309,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2861 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
70+0.25 EUR
105+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
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RN2316,LXHF RN2316,LXHF Toshiba Semiconductor and Storage Description: AUTO AEC-Q TR PNP BRT, Q1BSR=4.7
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
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RN2316,LXHF RN2316,LXHF Toshiba Semiconductor and Storage Description: AUTO AEC-Q TR PNP BRT, Q1BSR=4.7
auf Bestellung 5300 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
34+0.53 EUR
100+0.30 EUR
500+0.20 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
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RN1310,LXHF RN1310,LXHF Toshiba Semiconductor and Storage datasheet_en_20231102.pdf?did=18781 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN1310,LXHF RN1310,LXHF Toshiba Semiconductor and Storage datasheet_en_20231102.pdf?did=18781 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
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RN2304,LXHF RN2304,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
Mindestbestellmenge: 3000
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RN2304,LXHF RN2304,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5780 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
69+0.26 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 46
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RN1710JE(TE85L,F) RN1710JE(TE85L,F) Toshiba Semiconductor and Storage RN1710JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1710JE Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1710JE(TE85L,F) RN1710JE(TE85L,F) Toshiba Semiconductor and Storage RN1710JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1710JE Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ESV
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 28
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TK5A80E,S4X TK5A80E,S4X Toshiba Semiconductor and Storage docget.jsp?did=30681&prodName=TK5A80E Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 5 Stücke:
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TK4A80E,S4X Toshiba Semiconductor and Storage TK4A80E_datasheet_en_20151124.pdf?did=30527&prodName=TK4A80E Description: PB-FPOWERMOSFETTRANSISTORTO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 400µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
11+1.62 EUR
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TK7R7P10PL,RQ TK7R7P10PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=60584&prodName=TK7R7P10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.82 EUR
5000+0.78 EUR
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TK7R7P10PL,RQ TK7R7P10PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=60584&prodName=TK7R7P10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 7487 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+1.87 EUR
100+1.26 EUR
500+1.00 EUR
1000+0.91 EUR
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BAV99W,LF BAV99W,LF Toshiba Semiconductor and Storage docget.jsp?did=55417&prodName=BAV99W Description: DIODE ARRAY GP 100V 150MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: USM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.03 EUR
Mindestbestellmenge: 3000
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BAV99W,LF BAV99W,LF Toshiba Semiconductor and Storage docget.jsp?did=55417&prodName=BAV99W Description: DIODE ARRAY GP 100V 150MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: USM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4045 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
148+0.12 EUR
220+0.08 EUR
500+0.06 EUR
1000+0.06 EUR
Mindestbestellmenge: 100
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CEZ30V,L3F CEZ30V,L3F Toshiba Semiconductor and Storage Description: TVS DIODE 30VWM 47.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.06 EUR
Mindestbestellmenge: 8000
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CEZ30V,L3F CEZ30V,L3F Toshiba Semiconductor and Storage Description: TVS DIODE 30VWM 47.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 17907 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
93+0.19 EUR
215+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
Mindestbestellmenge: 63
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CEZ6V2,L3F CEZ6V2,L3F Toshiba Semiconductor and Storage Description: TVS DIODE 6.2VWM 10VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.08 EUR
16000+0.06 EUR
24000+0.06 EUR
Mindestbestellmenge: 8000
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CEZ6V2,L3F CEZ6V2,L3F Toshiba Semiconductor and Storage Description: TVS DIODE 6.2VWM 10VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 35835 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
52+0.34 EUR
106+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
2000+0.08 EUR
Mindestbestellmenge: 35
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TLP3052A(TP1,F TLP3052A(TP1,F Toshiba Semiconductor and Storage TLP3052A_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052A Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.85 EUR
3000+0.81 EUR
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TLP3052A(TP1,F TLP3052A(TP1,F Toshiba Semiconductor and Storage TLP3052A_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052A Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4095 Stücke:
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11+1.61 EUR
100+1.13 EUR
500+0.94 EUR
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TMPM370FYDFG Toshiba Semiconductor and Storage docget.jsp?did=6324&prodName=TMPM370FYDFG Description: IC MCU 32BIT 256KB FLASH 100QFP
Produkt ist nicht verfügbar
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TCK207G,LF TCK207G,LF Toshiba Semiconductor and Storage TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.33 EUR
6000+0.30 EUR
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TCK207G,LF TCK207G,LF Toshiba Semiconductor and Storage TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 8002 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
22+0.82 EUR
26+0.69 EUR
100+0.53 EUR
250+0.46 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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74VHC164FT 74VHC164FT Toshiba Semiconductor and Storage docget.jsp?did=14140&prodName=74VHC164FT Description: IC REG SHIFT SIPO 8BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
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2500+0.22 EUR
Mindestbestellmenge: 2500
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74VHC164FT 74VHC164FT Toshiba Semiconductor and Storage docget.jsp?did=14140&prodName=74VHC164FT Description: IC REG SHIFT SIPO 8BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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TLP2310(TPL,E TLP2310(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=29657&prodName=TLP2310 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2310(TPL,E TLP2310(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=29657&prodName=TLP2310 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
11+1.70 EUR
100+1.28 EUR
500+1.09 EUR
1000+1.03 EUR
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TLP2348(V4-TPL,E TLP2348(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14703&prodName=TLP2348 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 3000 Stücke:
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3000+0.71 EUR
Mindestbestellmenge: 3000
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TK5A60W5,S5VX
TK5A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Produkt ist nicht verfügbar
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RN2425(TE85L,F) docget.jsp?did=18885&prodName=RN2425
RN2425(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R2 Only
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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RN2425(TE85L,F) docget.jsp?did=18885&prodName=RN2425
RN2425(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R2 Only
auf Bestellung 11279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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CMS08(TE12L,Q,M) CMS08_datasheet_en_20190307.pdf?did=3142&prodName=CMS08
CMS08(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Produkt ist nicht verfügbar
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TCR3RM285A,LF(SE
TCR3RM285A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.85V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM285A,LF(SE
TCR3RM285A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.85V 300MA 4DFNC
auf Bestellung 8940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
28+0.65 EUR
30+0.60 EUR
100+0.44 EUR
250+0.40 EUR
500+0.33 EUR
1000+0.25 EUR
2500+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 23
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TCR3RM09A,LF(SE docget.jsp?did=69842&prodName=TCR3RM33A
TCR3RM09A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM09A,LF(SE docget.jsp?did=69842&prodName=TCR3RM33A
TCR3RM09A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
auf Bestellung 9955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.66 EUR
33+0.54 EUR
100+0.41 EUR
250+0.34 EUR
500+0.30 EUR
1000+0.27 EUR
2500+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 17
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TTD1409B,S4X TTD1409B_datasheet_en_20150806.pdf?did=13852&prodName=TTD1409B
TTD1409B,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN DARL 400V 6A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V
Supplier Device Package: TO-220SIS
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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2SC3303-Y(T6L1,NQ) docget.jsp?did=20516&prodName=2SC3303
2SC3303-Y(T6L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC3303-Y(T6L1,NQ) docget.jsp?did=20516&prodName=2SC3303
2SC3303-Y(T6L1,NQ)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 5A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.93 EUR
100+1.30 EUR
500+1.03 EUR
Mindestbestellmenge: 6
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2SA1201-Y(TE12L,ZC docget.jsp?did=20286&prodName=2SA1201
2SA1201-Y(TE12L,ZC
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
Mindestbestellmenge: 14
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74VHC165FT docget.jsp?did=14003&prodName=74VHC165FT
74VHC165FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG SHIFT PISO 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.21 EUR
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74VHC165FT docget.jsp?did=14003&prodName=74VHC165FT
74VHC165FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG SHIFT PISO 8BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 35
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GT40WR21,Q GT40WR21_datasheet_en_20180423.pdf?did=13219&prodName=GT40WR21
GT40WR21,Q
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 375 W
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.04 EUR
10+13.21 EUR
25+11.68 EUR
100+9.93 EUR
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74LCX08FT docget.jsp?did=15274&prodName=74LCX08FT
74LCX08FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
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74LCX08FT docget.jsp?did=15274&prodName=74LCX08FT
74LCX08FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
auf Bestellung 2482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
56+0.32 EUR
63+0.28 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.20 EUR
Mindestbestellmenge: 38
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TLP250H(TP1,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250H(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2.5 A
auf Bestellung 1500 Stücke:
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Anzahl Preis
1500+1.22 EUR
Mindestbestellmenge: 1500
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TLP250H(TP1,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250H(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2.5 A
auf Bestellung 1787 Stücke:
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Anzahl Preis
7+2.85 EUR
10+2.03 EUR
100+1.54 EUR
500+1.33 EUR
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BAS316,H3F docget.jsp?did=55416&prodName=BAS316
BAS316,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: USC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
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BAS316,H3F docget.jsp?did=55416&prodName=BAS316
BAS316,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: USC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
150+0.12 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
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74HC4053D 74HC4053D_datasheet_en_20201124.pdf?did=54976&prodName=74HC4053D
74HC4053D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
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74HC4053D 74HC4053D_datasheet_en_20201124.pdf?did=54976&prodName=74HC4053D
74HC4053D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 2697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
54+0.33 EUR
60+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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BAV99,LM docget.jsp?did=55420&prodName=BAV99
BAV99,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Produkt ist nicht verfügbar
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BAV99,LM docget.jsp?did=55420&prodName=BAV99
BAV99,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 1762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
91+0.20 EUR
182+0.10 EUR
500+0.08 EUR
1000+0.06 EUR
Mindestbestellmenge: 63
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TC74HC126AP(F) docget.jsp?did=8783&prodName=TC74HC125AF
TC74HC126AP(F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-DIP
Part Status: Active
Produkt ist nicht verfügbar
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RN2704,LF RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704
RN2704,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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RN2704,LF RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704
RN2704,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
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RN2910,LF(CT RN2910_datasheet_en_20211223.pdf?did=18911&prodName=RN2910
RN2910,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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RN2910,LF(CT RN2910_datasheet_en_20211223.pdf?did=18911&prodName=RN2910
RN2910,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
Mindestbestellmenge: 36
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RN2309,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2309,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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RN2309,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2309,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
105+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
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RN2316,LXHF
RN2316,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP BRT, Q1BSR=4.7
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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RN2316,LXHF
RN2316,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP BRT, Q1BSR=4.7
auf Bestellung 5300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
34+0.53 EUR
100+0.30 EUR
500+0.20 EUR
1000+0.15 EUR
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RN1310,LXHF datasheet_en_20231102.pdf?did=18781
RN1310,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN1310,LXHF datasheet_en_20231102.pdf?did=18781
RN1310,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
Mindestbestellmenge: 31
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RN2304,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2304,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
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RN2304,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2304,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
69+0.26 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 46
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RN1710JE(TE85L,F) RN1710JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1710JE
RN1710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ESV
Produkt ist nicht verfügbar
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RN1710JE(TE85L,F) RN1710JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1710JE
RN1710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ESV
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 28
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TK5A80E,S4X docget.jsp?did=30681&prodName=TK5A80E
TK5A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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TK4A80E,S4X TK4A80E_datasheet_en_20151124.pdf?did=30527&prodName=TK4A80E
Hersteller: Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORTO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 400µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
11+1.62 EUR
Mindestbestellmenge: 9
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TK7R7P10PL,RQ docget.jsp?did=60584&prodName=TK7R7P10PL
TK7R7P10PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.82 EUR
5000+0.78 EUR
Mindestbestellmenge: 2500
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TK7R7P10PL,RQ docget.jsp?did=60584&prodName=TK7R7P10PL
TK7R7P10PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 7487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.87 EUR
100+1.26 EUR
500+1.00 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
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BAV99W,LF docget.jsp?did=55417&prodName=BAV99W
BAV99W,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 100V 150MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: USM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
Mindestbestellmenge: 3000
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BAV99W,LF docget.jsp?did=55417&prodName=BAV99W
BAV99W,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 100V 150MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: USM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
148+0.12 EUR
220+0.08 EUR
500+0.06 EUR
1000+0.06 EUR
Mindestbestellmenge: 100
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CEZ30V,L3F
CEZ30V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.06 EUR
Mindestbestellmenge: 8000
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CEZ30V,L3F
CEZ30V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 17907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
93+0.19 EUR
215+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
Mindestbestellmenge: 63
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CEZ6V2,L3F
CEZ6V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.08 EUR
16000+0.06 EUR
24000+0.06 EUR
Mindestbestellmenge: 8000
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CEZ6V2,L3F
CEZ6V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Part Status: Active
auf Bestellung 35835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
106+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
2000+0.08 EUR
Mindestbestellmenge: 35
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TLP3052A(TP1,F TLP3052A_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052A
TLP3052A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.85 EUR
3000+0.81 EUR
Mindestbestellmenge: 1500
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TLP3052A(TP1,F TLP3052A_datasheet_en_20201022.pdf?did=30349&prodName=TLP3052A
TLP3052A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.61 EUR
100+1.13 EUR
500+0.94 EUR
Mindestbestellmenge: 7
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TMPM370FYDFG docget.jsp?did=6324&prodName=TMPM370FYDFG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100QFP
Produkt ist nicht verfügbar
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TCK207G,LF TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G
TCK207G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.30 EUR
Mindestbestellmenge: 3000
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TCK207G,LF TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G
TCK207G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 8002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
26+0.69 EUR
100+0.53 EUR
250+0.46 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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74VHC164FT docget.jsp?did=14140&prodName=74VHC164FT
74VHC164FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG SHIFT SIPO 8BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
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74VHC164FT docget.jsp?did=14140&prodName=74VHC164FT
74VHC164FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG SHIFT SIPO 8BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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TLP2310(TPL,E docget.jsp?did=29657&prodName=TLP2310
TLP2310(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2310(TPL,E docget.jsp?did=29657&prodName=TLP2310
TLP2310(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
11+1.70 EUR
100+1.28 EUR
500+1.09 EUR
1000+1.03 EUR
Mindestbestellmenge: 8
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TLP2348(V4-TPL,E docget.jsp?did=14703&prodName=TLP2348
TLP2348(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.71 EUR
Mindestbestellmenge: 3000
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