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CUHZ20V,H3F CUHZ20V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 10851 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
40+0.44 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1104 Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1104 Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30
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RN1105MFV,L3XHF(CT RN1105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1105MFV Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
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8000+0.09 EUR
Mindestbestellmenge: 8000
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RN1105MFV,L3XHF(CT RN1105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1105MFV Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
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29+0.62 EUR
35+0.50 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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RN1103MFV,L3F(CT RN1103MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1103MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN1103MFV,L3F(CT RN1103MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1103MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 315 Stücke:
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56+0.32 EUR
60+0.30 EUR
110+0.16 EUR
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RN1108MFV,L3F RN1108MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5880&prodName=RN1108MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 24000 Stücke:
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8000+0.05 EUR
16000+0.05 EUR
24000+0.04 EUR
Mindestbestellmenge: 8000
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RN1108MFV,L3F RN1108MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5880&prodName=RN1108MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 31576 Stücke:
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56+0.32 EUR
60+0.30 EUR
110+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
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TK5R3E08QM,S1X TK5R3E08QM,S1X Toshiba Semiconductor and Storage Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 81 Stücke:
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8+2.38 EUR
50+1.91 EUR
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TK3R2A08QM,S4X TK3R2A08QM,S4X Toshiba Semiconductor and Storage TK3R2A08QM_datasheet_en_20210201.pdf?did=70417&prodName=TK3R2A08QM Description: UMOS10 TO-220SIS 80V 3.2MOHM
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TK5R1A08QM,S4X TK5R1A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70419&prodName=TK5R1A08QM Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 53 Stücke:
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6+3.26 EUR
50+1.58 EUR
Mindestbestellmenge: 6
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TK2R4E08QM,S1X TK2R4E08QM,S1X Toshiba Semiconductor and Storage Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 176 Stücke:
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4+4.89 EUR
50+3.88 EUR
100+3.33 EUR
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TB62214AFG,C8,EL TB62214AFG,C8,EL Toshiba Semiconductor and Storage TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFG,C8,EL TB62214AFG,C8,EL Toshiba Semiconductor and Storage TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TLP3546A(TP1,F TLP3546A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60321&prodName=TLP3546A Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 1500 Stücke:
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1500+4.18 EUR
Mindestbestellmenge: 1500
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TLP3546A(TP1,F TLP3546A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60321&prodName=TLP3546A Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 2138 Stücke:
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3+6.04 EUR
10+5.38 EUR
25+5.14 EUR
50+4.97 EUR
100+4.80 EUR
250+4.58 EUR
500+4.42 EUR
Mindestbestellmenge: 3
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TLP3554(LF1,F) TLP3554(LF1,F) Toshiba Semiconductor and Storage TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554 Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.09 EUR
10+4.76 EUR
25+4.23 EUR
50+4.02 EUR
100+3.81 EUR
Mindestbestellmenge: 4
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TLP714F(4HWTP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-MBSTP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4HW1TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(TP,F) Toshiba Semiconductor and Storage TLP714_Rev6.0_12-25-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(D4-TP,F) Toshiba Semiconductor and Storage TLP714_Rev6.0_12-25-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TBD62308APG,HZ TBD62308APG,HZ Toshiba Semiconductor and Storage TBD62308APG_datasheet_en_20151217.pdf?did=30803&prodName=TBD62308APG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
25+1.69 EUR
100+1.34 EUR
500+1.06 EUR
Mindestbestellmenge: 6
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TCR3DM12,LF(SE TCR3DM12,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR3DM12,LF(SE TCR3DM12,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 39902 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
44+0.41 EUR
48+0.37 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 33
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TLP630(GB-FANUC,F) Toshiba Semiconductor and Storage TLP630_6-24-19.pdf Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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RN1415,LXHF RN1415,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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3000+0.11 EUR
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RN1415,LXHF RN1415,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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34+0.53 EUR
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RN2408,LXHF RN2408,LXHF Toshiba Semiconductor and Storage RN2408_datasheet_en_20210830.pdf?did=18876&prodName=RN2408 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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3000+0.11 EUR
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RN2408,LXHF RN2408,LXHF Toshiba Semiconductor and Storage RN2408_datasheet_en_20210830.pdf?did=18876&prodName=RN2408 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
35+0.51 EUR
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100+0.19 EUR
500+0.14 EUR
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TLP781F(YH,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP108(TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP781F(D4FUNBLL,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP2768(TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2766(TP,F) Toshiba Semiconductor and Storage TLP2766_Rev5.0_10-06-15.pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3DF285,LM(CT TCR3DF285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF285 Description: IC REG LINEAR 2.85V 300MA SMV
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3000+0.16 EUR
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TCR3DF285,LM(CT TCR3DF285,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF285 Description: IC REG LINEAR 2.85V 300MA SMV
auf Bestellung 4675 Stücke:
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29+0.61 EUR
34+0.53 EUR
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TCR3DM13,LF(SE TCR3DM13,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3DM13,LF(SE TCR3DM13,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 19635 Stücke:
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53+0.33 EUR
75+0.24 EUR
86+0.21 EUR
100+0.18 EUR
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2500+0.14 EUR
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TLP3083(F TLP3083(F Toshiba Semiconductor and Storage TLP3083_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083 Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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7UL1G07FU,LF 7UL1G07FU,LF Toshiba Semiconductor and Storage docget.jsp?did=69981&prodName=7UL1G07FU Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
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3000+0.18 EUR
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7UL1G07FU,LF 7UL1G07FU,LF Toshiba Semiconductor and Storage docget.jsp?did=69981&prodName=7UL1G07FU Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
auf Bestellung 11285 Stücke:
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20+0.88 EUR
34+0.52 EUR
42+0.43 EUR
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1SS403E,L3F 1SS403E,L3F Toshiba Semiconductor and Storage docget.jsp?did=60312&prodName=1SS403E Description: DIODE STANDARD 200V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1SS403E,L3F 1SS403E,L3F Toshiba Semiconductor and Storage docget.jsp?did=60312&prodName=1SS403E Description: DIODE STANDARD 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7796 Stücke:
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56+0.32 EUR
82+0.22 EUR
148+0.12 EUR
500+0.10 EUR
1000+0.10 EUR
2000+0.09 EUR
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TW048N65C,S1F TW048N65C,S1F Toshiba Semiconductor and Storage TW048N65C_datasheet_en_20221214.pdf?did=143241&prodName=TW048N65C Description: G3 650V SIC-MOSFET TO-247 48MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
auf Bestellung 29 Stücke:
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1+31.96 EUR
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TW083N65C,S1F TW083N65C,S1F Toshiba Semiconductor and Storage TW083N65C_datasheet_en_20221214.pdf?did=143249&prodName=TW083N65C Description: G3 650V SIC-MOSFET TO-247 83MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
auf Bestellung 142 Stücke:
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2+16.23 EUR
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TW045N120C,S1F TW045N120C,S1F Toshiba Semiconductor and Storage TW045N120C_datasheet_en_20221214.pdf?did=143237&prodName=TW045N120C Description: G3 1200V SIC-MOSFET TO-247 45MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
auf Bestellung 111 Stücke:
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TW060N120C,S1F TW060N120C,S1F Toshiba Semiconductor and Storage TW060N120C_datasheet_en_20221214.pdf?did=143245&prodName=TW060N120C Description: G3 1200V SIC-MOSFET TO-247 60MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
auf Bestellung 9 Stücke:
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1+38.53 EUR
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TW030N120C,S1F TW030N120C,S1F Toshiba Semiconductor and Storage TW030N120C_datasheet_en_20221214.pdf?did=143235&prodName=TW030N120C Description: G3 1200V SIC-MOSFET TO-247 30MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
auf Bestellung 10 Stücke:
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1+58.94 EUR
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CUHZ16V,H3F CUHZ16V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ16V Description: TVS DIODE 16VWM 17VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
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3000+0.12 EUR
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CUHZ16V,H3F CUHZ16V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ16V Description: TVS DIODE 16VWM 17VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 3294 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
44+0.40 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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CUHZ30V,H3F CUHZ30V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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CUHZ30V,H3F CUHZ30V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 1054 Stücke:
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26+0.69 EUR
41+0.43 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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2SA1943-O(S1,F 2SA1943-O(S1,F Toshiba Semiconductor and Storage docget.jsp?did=20427&prodName=2SA1943 Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.46 EUR
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TLP240J(F TLP240J(F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 90 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.40 EUR
10+2.19 EUR
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TLP240GA(F TLP240GA(F Toshiba Semiconductor and Storage TLP240GA_datasheet_en_20230525.pdf?did=13996&prodName=TLP240GA Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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TLP240GA(LF1,F TLP240GA(LF1,F Toshiba Semiconductor and Storage TLP240GA_datasheet_en_20230525.pdf?did=13996&prodName=TLP240GA Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.29 EUR
10+2.12 EUR
100+1.53 EUR
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CUHZ20V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 10851 Stücke:
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Anzahl Preis
26+0.69 EUR
40+0.44 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1104
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.11 EUR
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1104
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
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RN1105MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1105MFV
RN1105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
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Anzahl Preis
8000+0.09 EUR
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RN1105MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1105MFV
RN1105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
35+0.50 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
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RN1103MFV,L3F(CT docget.jsp?did=5879&prodName=RN1103MFV
RN1103MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN1103MFV,L3F(CT docget.jsp?did=5879&prodName=RN1103MFV
RN1103MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
60+0.30 EUR
110+0.16 EUR
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RN1108MFV,L3F docget.jsp?did=5880&prodName=RN1108MFV
RN1108MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.05 EUR
16000+0.05 EUR
24000+0.04 EUR
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RN1108MFV,L3F docget.jsp?did=5880&prodName=RN1108MFV
RN1108MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 31576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
60+0.30 EUR
110+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
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TK5R3E08QM,S1X
TK5R3E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
50+1.91 EUR
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TK3R2A08QM,S4X TK3R2A08QM_datasheet_en_20210201.pdf?did=70417&prodName=TK3R2A08QM
TK3R2A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 3.2MOHM
auf Bestellung 2 Stücke:
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TK5R1A08QM,S4X docget.jsp?did=70419&prodName=TK5R1A08QM
TK5R1A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
50+1.58 EUR
Mindestbestellmenge: 6
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TK2R4E08QM,S1X
TK2R4E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
50+3.88 EUR
100+3.33 EUR
Mindestbestellmenge: 4
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TB62214AFG,C8,EL TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG
TB62214AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFG,C8,EL TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG
TB62214AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TLP3546A(TP1,F docget.jsp?did=60321&prodName=TLP3546A
TLP3546A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.18 EUR
Mindestbestellmenge: 1500
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TLP3546A(TP1,F docget.jsp?did=60321&prodName=TLP3546A
TLP3546A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 2138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+5.38 EUR
25+5.14 EUR
50+4.97 EUR
100+4.80 EUR
250+4.58 EUR
500+4.42 EUR
Mindestbestellmenge: 3
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TLP3554(LF1,F) TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554
TLP3554(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+4.76 EUR
25+4.23 EUR
50+4.02 EUR
100+3.81 EUR
Mindestbestellmenge: 4
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TLP714F(4HWTP,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-MBSTP,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4HW1TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(TP,F) TLP714_Rev6.0_12-25-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(D4-TP,F) TLP714_Rev6.0_12-25-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TBD62308APG,HZ TBD62308APG_datasheet_en_20151217.pdf?did=30803&prodName=TBD62308APG
TBD62308APG,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
25+1.69 EUR
100+1.34 EUR
500+1.06 EUR
Mindestbestellmenge: 6
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TCR3DM12,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM12,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR3DM12,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM12,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 39902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
44+0.41 EUR
48+0.37 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 33
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TLP630(GB-FANUC,F) TLP630_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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RN1415,LXHF docget.jsp?did=18796&prodName=RN1415
RN1415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN1415,LXHF docget.jsp?did=18796&prodName=RN1415
RN1415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
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RN2408,LXHF RN2408_datasheet_en_20210830.pdf?did=18876&prodName=RN2408
RN2408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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RN2408,LXHF RN2408_datasheet_en_20210830.pdf?did=18876&prodName=RN2408
RN2408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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TLP781F(YH,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP108(TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP781F(D4FUNBLL,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2768(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2766(TP,F) TLP2766_Rev5.0_10-06-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3DF285,LM(CT docget.jsp?did=14709&prodName=TCR3DF285
TCR3DF285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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TCR3DF285,LM(CT docget.jsp?did=14709&prodName=TCR3DF285
TCR3DF285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA SMV
auf Bestellung 4675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
29+0.61 EUR
34+0.53 EUR
100+0.34 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
Mindestbestellmenge: 22
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TCR3DM13,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM13,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
Mindestbestellmenge: 10000
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TCR3DM13,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM13,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 19635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
75+0.24 EUR
86+0.21 EUR
100+0.18 EUR
250+0.16 EUR
500+0.15 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 53
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TLP3083(F TLP3083_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083
TLP3083(F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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7UL1G07FU,LF docget.jsp?did=69981&prodName=7UL1G07FU
7UL1G07FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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7UL1G07FU,LF docget.jsp?did=69981&prodName=7UL1G07FU
7UL1G07FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
auf Bestellung 11285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
34+0.52 EUR
42+0.43 EUR
100+0.32 EUR
250+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 20
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1SS403E,L3F docget.jsp?did=60312&prodName=1SS403E
1SS403E,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1SS403E,L3F docget.jsp?did=60312&prodName=1SS403E
1SS403E,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
82+0.22 EUR
148+0.12 EUR
500+0.10 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 56
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TW048N65C,S1F TW048N65C_datasheet_en_20221214.pdf?did=143241&prodName=TW048N65C
TW048N65C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 48MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.96 EUR
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TW083N65C,S1F TW083N65C_datasheet_en_20221214.pdf?did=143249&prodName=TW083N65C
TW083N65C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 83MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.23 EUR
10+11.74 EUR
Mindestbestellmenge: 2
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TW045N120C,S1F TW045N120C_datasheet_en_20221214.pdf?did=143237&prodName=TW045N120C
TW045N120C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 45MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.81 EUR
30+25.47 EUR
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TW060N120C,S1F TW060N120C_datasheet_en_20221214.pdf?did=143245&prodName=TW060N120C
TW060N120C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 60MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.53 EUR
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TW030N120C,S1F TW030N120C_datasheet_en_20221214.pdf?did=143235&prodName=TW030N120C
TW030N120C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 30MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.94 EUR
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CUHZ16V,H3F docget.jsp?did=70664&prodName=CUHZ16V
CUHZ16V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CUHZ16V,H3F docget.jsp?did=70664&prodName=CUHZ16V
CUHZ16V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 3294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
44+0.40 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
CUHZ30V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ30V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CUHZ30V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ30V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 1054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
41+0.43 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
2SA1943-O(S1,F docget.jsp?did=20427&prodName=2SA1943
2SA1943-O(S1,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLP240J(F
TLP240J(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 90 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.40 EUR
10+2.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLP240GA(F TLP240GA_datasheet_en_20230525.pdf?did=13996&prodName=TLP240GA
TLP240GA(F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP240GA(LF1,F TLP240GA_datasheet_en_20230525.pdf?did=13996&prodName=TLP240GA
TLP240GA(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.12 EUR
100+1.53 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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