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TW015N65C,S1F TW015N65C,S1F Toshiba Semiconductor and Storage TW015N65C_datasheet_en_20220615.pdf?did=143225&prodName=TW015N65C Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 39 Stücke:
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1+89.41 EUR
30+68.85 EUR
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TPH9R506PL,LQ TPH9R506PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55559&prodName=TPH9R506PL Description: MOSFET N-CH 60V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Produkt ist nicht verfügbar
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TPH9R506PL,LQ TPH9R506PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55559&prodName=TPH9R506PL Description: MOSFET N-CH 60V 34A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
auf Bestellung 4631 Stücke:
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10+1.94 EUR
15+1.24 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
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TCR5RG18A,LF TCR5RG18A,LF Toshiba Semiconductor and Storage TCR5RG17A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG17A Description: LDO REG, IOUT: 500MA VOUT: 1.8V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5RG18A,LF TCR5RG18A,LF Toshiba Semiconductor and Storage TCR5RG17A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG17A Description: LDO REG, IOUT: 500MA VOUT: 1.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 480 Stücke:
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19+0.93 EUR
24+0.75 EUR
26+0.69 EUR
100+0.51 EUR
250+0.46 EUR
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TCR3RM28A,LF(SE TCR3RM28A,LF(SE Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM28A,LF(SE TCR3RM28A,LF(SE Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5610 Stücke:
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27+0.66 EUR
30+0.6 EUR
100+0.45 EUR
250+0.4 EUR
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2500+0.23 EUR
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TCR2LN18,LF(SE TCR2LN18,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.5V I=200MA
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TCR2LN18,LF(SE TCR2LN18,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 14320 Stücke:
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28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
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TCR2EN18,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.8V IOUT=200MA
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TCR2EN18,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.8V IOUT=200MA
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41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
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TCR2LN18,LSF(SE TCR2LN18,LSF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.8V I=200MA
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10000+0.13 EUR
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TCR2LN18,LSF(SE TCR2LN18,LSF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.8V I=200MA
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34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
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TCR3UM18A,LF(SE TCR3UM18A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM18A,LF(SE TCR3UM18A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
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1000+0.21 EUR
2500+0.19 EUR
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SSM6J212FE,LF SSM6J212FE,LF Toshiba Semiconductor and Storage docget.jsp?did=1906&prodName=SSM6J212FE Description: MOSFET P-CH 20V 4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J212FE,LF SSM6J212FE,LF Toshiba Semiconductor and Storage docget.jsp?did=1906&prodName=SSM6J212FE Description: MOSFET P-CH 20V 4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Produkt ist nicht verfügbar
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CUZ20V,H3F CUZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ20V Description: TVS DIODE 20VWM 30.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.089 EUR
Mindestbestellmenge: 3000
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CUZ20V,H3F CUZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ20V Description: TVS DIODE 20VWM 30.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 6883 Stücke:
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108+0.16 EUR
500+0.12 EUR
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MUZ20V,LF MUZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.094 EUR
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MUZ20V,LF MUZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5990 Stücke:
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33+0.55 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
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MSZ20V,LF MSZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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MSZ20V,LF MSZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5970 Stücke:
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34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
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CEZ20V,L3F CEZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ20V Description: TVS DIODE 20VWM 30.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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CEZ20V,L3F CEZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ20V Description: TVS DIODE 20VWM 30.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
110+0.16 EUR
231+0.076 EUR
500+0.073 EUR
1000+0.07 EUR
2000+0.069 EUR
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CUHZ20V,H3F CUHZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ20V Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 9000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
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CUHZ20V,H3F CUHZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ20V Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 11967 Stücke:
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33+0.55 EUR
45+0.39 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1104 Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1104 Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
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RN1105MFV,L3XHF(CT RN1105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1105MFV Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
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RN1105MFV,L3XHF(CT RN1105MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1105MFV Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
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500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
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RN1103MFV,L3F(CT RN1103MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1103MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
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RN1103MFV,L3F(CT RN1103MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1103MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
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56+0.32 EUR
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RN1108MFV,L3F RN1108MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5880&prodName=RN1108MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
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RN1108MFV,L3F RN1108MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5880&prodName=RN1108MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
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TK5R3E08QM,S1X TK5R3E08QM,S1X Toshiba Semiconductor and Storage Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
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TK3R2A08QM,S4X TK3R2A08QM,S4X Toshiba Semiconductor and Storage TK3R2A08QM_datasheet_en_20210201.pdf?did=70417&prodName=TK3R2A08QM Description: UMOS10 TO-220SIS 80V 3.2MOHM
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TK5R1A08QM,S4X TK5R1A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70419&prodName=TK5R1A08QM Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 53 Stücke:
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TK2R4E08QM,S1X TK2R4E08QM,S1X Toshiba Semiconductor and Storage Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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TB62214AFG,C8,EL TB62214AFG,C8,EL Toshiba Semiconductor and Storage TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFG,C8,EL TB62214AFG,C8,EL Toshiba Semiconductor and Storage TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TLP3546A(TP1,F TLP3546A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60321&prodName=TLP3546A Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 1500 Stücke:
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1500+4.18 EUR
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TLP3546A(TP1,F TLP3546A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60321&prodName=TLP3546A Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 2138 Stücke:
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3+6.04 EUR
10+5.38 EUR
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500+4.42 EUR
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TLP3554(LF1,F) TLP3554(LF1,F) Toshiba Semiconductor and Storage TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554 Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.09 EUR
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25+4.23 EUR
50+4.02 EUR
100+3.81 EUR
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TLP714F(4HWTP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-MBSTP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4HW1TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(TP,F) Toshiba Semiconductor and Storage TLP714_Rev6.0_12-25-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714(D4-TP,F) Toshiba Semiconductor and Storage TLP714_Rev6.0_12-25-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(TP,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TBD62308APG,HZ TBD62308APG,HZ Toshiba Semiconductor and Storage TBD62308APG_datasheet_en_20151217.pdf?did=30803&prodName=TBD62308APG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
25+1.69 EUR
100+1.34 EUR
500+1.06 EUR
Mindestbestellmenge: 6
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TCR3DM12,LF(SE TCR3DM12,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR3DM12,LF(SE TCR3DM12,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 39902 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
44+0.41 EUR
48+0.37 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 33
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TLP630(GB-FANUC,F) Toshiba Semiconductor and Storage TLP630_6-24-19.pdf Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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RN1415,LXHF RN1415,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.095 EUR
Mindestbestellmenge: 3000
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RN1415,LXHF RN1415,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
Mindestbestellmenge: 34
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RN2408,LXHF RN2408,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18876&prodName=RN2408 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.097 EUR
6000+0.087 EUR
Mindestbestellmenge: 3000
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RN2408,LXHF RN2408,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18876&prodName=RN2408 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
60+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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TLP781F(YH,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TW015N65C,S1F TW015N65C_datasheet_en_20220615.pdf?did=143225&prodName=TW015N65C
TW015N65C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+89.41 EUR
30+68.85 EUR
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TPH9R506PL,LQ docget.jsp?did=55559&prodName=TPH9R506PL
TPH9R506PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Produkt ist nicht verfügbar
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TPH9R506PL,LQ docget.jsp?did=55559&prodName=TPH9R506PL
TPH9R506PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
auf Bestellung 4631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.24 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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TCR5RG18A,LF TCR5RG17A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG17A
TCR5RG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.8V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5RG18A,LF TCR5RG17A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG17A
TCR5RG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
24+0.75 EUR
26+0.69 EUR
100+0.51 EUR
250+0.46 EUR
Mindestbestellmenge: 19
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TCR3RM28A,LF(SE TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM28A,LF(SE TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
27+0.66 EUR
30+0.6 EUR
100+0.45 EUR
250+0.4 EUR
500+0.33 EUR
1000+0.25 EUR
2500+0.23 EUR
5000+0.22 EUR
Mindestbestellmenge: 22
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TCR2LN18,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR2LN18,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 14320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
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TCR2EN18,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR2EN18,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
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TCR2LN18,LSF(SE
TCR2LN18,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
Mindestbestellmenge: 10000
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TCR2LN18,LSF(SE
TCR2LN18,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 26
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TCR3UM18A,LF(SE
TCR3UM18A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM18A,LF(SE
TCR3UM18A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 3608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
28+0.64 EUR
31+0.58 EUR
100+0.4 EUR
250+0.34 EUR
500+0.27 EUR
1000+0.21 EUR
2500+0.19 EUR
Mindestbestellmenge: 21
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SSM6J212FE,LF docget.jsp?did=1906&prodName=SSM6J212FE
SSM6J212FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J212FE,LF docget.jsp?did=1906&prodName=SSM6J212FE
SSM6J212FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Produkt ist nicht verfügbar
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CUZ20V,H3F docget.jsp?did=155999&prodName=CUZ20V
CUZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.089 EUR
Mindestbestellmenge: 3000
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CUZ20V,H3F docget.jsp?did=155999&prodName=CUZ20V
CUZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 6883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
68+0.26 EUR
108+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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MUZ20V,LF
MUZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.094 EUR
Mindestbestellmenge: 3000
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MUZ20V,LF
MUZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 33
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MSZ20V,LF
MSZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.091 EUR
Mindestbestellmenge: 3000
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MSZ20V,LF
MSZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
Mindestbestellmenge: 34
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CEZ20V,L3F docget.jsp?did=155995&prodName=CEZ20V
CEZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CEZ20V,L3F docget.jsp?did=155995&prodName=CEZ20V
CEZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
110+0.16 EUR
231+0.076 EUR
500+0.073 EUR
1000+0.07 EUR
2000+0.069 EUR
Mindestbestellmenge: 72
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CUHZ20V,H3F docget.jsp?did=70664&prodName=CUHZ20V
CUHZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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CUHZ20V,H3F docget.jsp?did=70664&prodName=CUHZ20V
CUHZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 11967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
45+0.39 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 33
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1104
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1104
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
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RN1105MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1105MFV
RN1105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.094 EUR
Mindestbestellmenge: 8000
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RN1105MFV,L3XHF(CT docget.jsp?did=5879&prodName=RN1105MFV
RN1105MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
35+0.5 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
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RN1103MFV,L3F(CT docget.jsp?did=5879&prodName=RN1103MFV
RN1103MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN1103MFV,L3F(CT docget.jsp?did=5879&prodName=RN1103MFV
RN1103MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
60+0.3 EUR
110+0.16 EUR
Mindestbestellmenge: 56
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RN1108MFV,L3F docget.jsp?did=5880&prodName=RN1108MFV
RN1108MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.052 EUR
16000+0.045 EUR
24000+0.04 EUR
Mindestbestellmenge: 8000
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RN1108MFV,L3F docget.jsp?did=5880&prodName=RN1108MFV
RN1108MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
auf Bestellung 31576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
60+0.3 EUR
110+0.16 EUR
500+0.099 EUR
1000+0.067 EUR
2000+0.057 EUR
Mindestbestellmenge: 56
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TK5R3E08QM,S1X
TK5R3E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
50+1.91 EUR
Mindestbestellmenge: 8
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TK3R2A08QM,S4X TK3R2A08QM_datasheet_en_20210201.pdf?did=70417&prodName=TK3R2A08QM
TK3R2A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 3.2MOHM
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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TK5R1A08QM,S4X docget.jsp?did=70419&prodName=TK5R1A08QM
TK5R1A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
50+1.58 EUR
Mindestbestellmenge: 6
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TK2R4E08QM,S1X
TK2R4E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
50+3.88 EUR
100+3.33 EUR
Mindestbestellmenge: 4
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TB62214AFG,C8,EL TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG
TB62214AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFG,C8,EL TB62214AFG_datasheet_en_20141001.pdf?did=13038&prodName=TB62214AFG
TB62214AFG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TLP3546A(TP1,F docget.jsp?did=60321&prodName=TLP3546A
TLP3546A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.18 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP3546A(TP1,F docget.jsp?did=60321&prodName=TLP3546A
TLP3546A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
auf Bestellung 2138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+5.38 EUR
25+5.14 EUR
50+4.97 EUR
100+4.8 EUR
250+4.58 EUR
500+4.42 EUR
Mindestbestellmenge: 3
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TLP3554(LF1,F) TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554
TLP3554(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+4.76 EUR
25+4.23 EUR
50+4.02 EUR
100+3.81 EUR
Mindestbestellmenge: 4
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TLP714F(4HWTP,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4-TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP714F(D4-MBSTP,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TLP714F(D4HW1TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP714(TP,F) TLP714_Rev6.0_12-25-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP714(D4-TP,F) TLP714_Rev6.0_12-25-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP714F(TP,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Produkt ist nicht verfügbar
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TBD62308APG,HZ TBD62308APG_datasheet_en_20151217.pdf?did=30803&prodName=TBD62308APG
TBD62308APG,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
25+1.69 EUR
100+1.34 EUR
500+1.06 EUR
Mindestbestellmenge: 6
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TCR3DM12,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM12,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR3DM12,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM12,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 39902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
44+0.41 EUR
48+0.37 EUR
100+0.25 EUR
250+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
TLP630(GB-FANUC,F) TLP630_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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RN1415,LXHF docget.jsp?did=18796&prodName=RN1415
RN1415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.095 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1415,LXHF docget.jsp?did=18796&prodName=RN1415
RN1415,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN2408,LXHF docget.jsp?did=18876&prodName=RN2408
RN2408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.097 EUR
6000+0.087 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2408,LXHF docget.jsp?did=18876&prodName=RN2408
RN2408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
60+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
TLP781F(YH,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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