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TCR2LN11,LF(SE TCR2LN11,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.1V I=200MA
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TCR2LN11,LF(SE TCR2LN11,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.1V I=200MA
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28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.30 EUR
250+0.25 EUR
500+0.20 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
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TCR2LN08,LF(SE TCR2LN08,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=0.8V I=200MA
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TCR2LN08,LF(SE TCR2LN08,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=0.8V I=200MA
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28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.30 EUR
250+0.25 EUR
500+0.20 EUR
1000+0.16 EUR
2500+0.14 EUR
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TCR2LN31,LF(SE TCR2LN31,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=3.1V I=200MA
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TCR2LN31,LF(SE TCR2LN31,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=3.1V I=200MA
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100+0.30 EUR
250+0.25 EUR
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1000+0.16 EUR
2500+0.14 EUR
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TCR2EN21,LF(SE TCR2EN21,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=2.1V IOUT=200MA
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TCR2EN21,LF(SE TCR2EN21,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=2.1V IOUT=200MA
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41+0.43 EUR
100+0.30 EUR
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TCR2LN09,LF(SE TCR2LN09,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
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TCR2LN09,LF(SE TCR2LN09,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
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1000+0.17 EUR
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MSZ30V,LF MSZ30V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ30V Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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MSZ30V,LF MSZ30V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ30V Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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TC74HC157AP(F) TC74HC157AP(F) Toshiba Semiconductor and Storage Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Produkt ist nicht verfügbar
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GT40QR21(STA1,E,D GT40QR21(STA1,E,D Toshiba Semiconductor and Storage docget.jsp?did=9834&prodName=GT40QR21 Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
auf Bestellung 68 Stücke:
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3+8.20 EUR
25+4.75 EUR
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74VHC174FT 74VHC174FT Toshiba Semiconductor and Storage docget.jsp?did=15747&prodName=74VHC174FT Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LCX374FT Toshiba Semiconductor and Storage docget.jsp?did=15176&prodName=74LCX374FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TLP2710(E TLP2710(E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 235 Stücke:
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8+2.46 EUR
11+1.75 EUR
125+1.29 EUR
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TCK22925G,LF TCK22925G,LF Toshiba Semiconductor and Storage TCK22921G_datasheet_en_20211118.pdf?did=53117&prodName=TCK22921G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
Produkt ist nicht verfügbar
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TCK22925G,LF TCK22925G,LF Toshiba Semiconductor and Storage TCK22921G_datasheet_en_20211118.pdf?did=53117&prodName=TCK22921G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
auf Bestellung 4275 Stücke:
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24+0.76 EUR
27+0.65 EUR
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500+0.36 EUR
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74HCT4053D 74HCT4053D Toshiba Semiconductor and Storage 74HCT4053D_datasheet_en_20201117.pdf?did=54977&prodName=74HCT4053D Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
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2500+0.20 EUR
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74HCT4053D 74HCT4053D Toshiba Semiconductor and Storage 74HCT4053D_datasheet_en_20201117.pdf?did=54977&prodName=74HCT4053D Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 12201 Stücke:
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35+0.51 EUR
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58+0.31 EUR
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BAV70,LM BAV70,LM Toshiba Semiconductor and Storage docget.jsp?did=55438&prodName=BAV70 Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 6000 Stücke:
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3000+0.05 EUR
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BAV70,LM BAV70,LM Toshiba Semiconductor and Storage docget.jsp?did=55438&prodName=BAV70 Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 6047 Stücke:
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72+0.25 EUR
122+0.14 EUR
167+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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TLP785(TELS,F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Produkt ist nicht verfügbar
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CUZ30V,H3F CUZ30V,H3F Toshiba Semiconductor and Storage Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
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6000+0.06 EUR
9000+0.06 EUR
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CUZ30V,H3F CUZ30V,H3F Toshiba Semiconductor and Storage Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 12971 Stücke:
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72+0.25 EUR
104+0.17 EUR
178+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
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TK25S06N1L,LXHQ TK25S06N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
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TK25S06N1L,LXHQ TK25S06N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
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TK25S06N1L,LQ TK25S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 25A DPAK
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BAS516,H3F BAS516,H3F Toshiba Semiconductor and Storage BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4000 Stücke:
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4000+0.05 EUR
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BAS516,H3F BAS516,H3F Toshiba Semiconductor and Storage BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 7484 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
92+0.19 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 63
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RN1131MFV,L3F RN1131MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=727&prodName=RN1132MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 8000 Stücke:
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8000+0.04 EUR
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RN1131MFV,L3F RN1131MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=727&prodName=RN1132MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
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RN2131MFV,L3F RN2131MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=1075&prodName=RN2131MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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RN2131MFV,L3F RN2131MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=1075&prodName=RN2131MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
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TLP293-4(GBTPR,E TLP293-4(GBTPR,E Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2000 Stücke:
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2000+1.06 EUR
Mindestbestellmenge: 2000
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TLP293-4(GBTPR,E TLP293-4(GBTPR,E Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2509 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+1.83 EUR
100+1.38 EUR
500+1.18 EUR
1000+1.12 EUR
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TLP187(TPR,E TLP187(TPR,E Toshiba Semiconductor and Storage TLP187_datasheet_en_20191119.pdf?did=13690&prodName=TLP187 Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
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3000+0.61 EUR
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TLP187(TPR,E TLP187(TPR,E Toshiba Semiconductor and Storage TLP187_datasheet_en_20191119.pdf?did=13690&prodName=TLP187 Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5537 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
14+1.26 EUR
100+0.87 EUR
500+0.71 EUR
1000+0.67 EUR
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2SC2712-BL,LF 2SC2712-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
Mindestbestellmenge: 3000
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2SC2712-BL,LF 2SC2712-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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TB67H450AFNG,EL TB67H450AFNG,EL Toshiba Semiconductor and Storage datasheet_en_20201217.pdf?did=70454 Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 7000 Stücke:
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3500+0.96 EUR
7000+0.94 EUR
Mindestbestellmenge: 3500
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TB67H450AFNG,EL TB67H450AFNG,EL Toshiba Semiconductor and Storage datasheet_en_20201217.pdf?did=70454 Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 9293 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
10+2.31 EUR
25+1.95 EUR
100+1.54 EUR
250+1.34 EUR
500+1.21 EUR
1000+1.11 EUR
Mindestbestellmenge: 5
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TLP188(GB,E Toshiba Semiconductor and Storage TLP188_datasheet_en_20191119.pdf?did=13932&prodName=TLP188 Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 125 Stücke:
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14+1.34 EUR
21+0.86 EUR
125+0.57 EUR
Mindestbestellmenge: 14
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TLP628M(LF5,E TLP628M(LF5,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
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TLP628M(LF1,E TLP628M(LF1,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95 Stücke:
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13+1.36 EUR
19+0.95 EUR
Mindestbestellmenge: 13
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TLP628M(GB-LF1,E TLP628M(GB-LF1,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 90 Stücke:
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17+1.09 EUR
24+0.76 EUR
Mindestbestellmenge: 17
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TLP628MF(GB,E TLP628MF(GB,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
19+0.95 EUR
Mindestbestellmenge: 13
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TLP628M(GB,E TLP628M(GB,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
Mindestbestellmenge: 13
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TLP628M(GB-LF5,E TLP628M(GB-LF5,E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
Mindestbestellmenge: 13
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TLP628M(E TLP628M(E Toshiba Semiconductor and Storage TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 148 Stücke:
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13+1.43 EUR
19+0.93 EUR
100+0.61 EUR
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TK110E65Z,S1X TK110E65Z,S1X Toshiba Semiconductor and Storage TK110E65Z_datasheet_en_20220201.pdf?did=139853&prodName=TK110E65Z Description: 650V DTMOS VI TO-220 110MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 42 Stücke:
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3+6.64 EUR
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RN2105,LXHF(CT RN2105,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2105 Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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RN2105,LXHF(CT RN2105,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2105 Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
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RN2106,LXHF(CT RN2106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
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RN2106,LXHF(CT RN2106,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
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RN2102,LXHF(CT RN2102,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2102 Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
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RN2102,LXHF(CT RN2102,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2102 Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
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RN2107,LXHF(CT RN2107,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
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RN2107,LXHF(CT RN2107,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
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TCR2LN11,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
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TCR2LN11,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
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TCR2LN08,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN08,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
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TCR2LN08,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN08,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
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28+0.63 EUR
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TCR2LN31,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN31,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Produkt ist nicht verfügbar
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TCR2LN31,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN31,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
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37+0.48 EUR
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TCR2EN21,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN21,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.1V IOUT=200MA
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TCR2EN21,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN21,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.1V IOUT=200MA
auf Bestellung 10000 Stücke:
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28+0.63 EUR
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TCR2LN09,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN09,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
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TCR2LN09,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN09,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
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27+0.67 EUR
35+0.51 EUR
39+0.46 EUR
100+0.32 EUR
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MSZ30V,LF docget.jsp?did=69349&prodName=MSZ30V
MSZ30V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 3000 Stücke:
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MSZ30V,LF docget.jsp?did=69349&prodName=MSZ30V
MSZ30V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5500 Stücke:
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34+0.53 EUR
48+0.37 EUR
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TC74HC157AP(F)
TC74HC157AP(F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Produkt ist nicht verfügbar
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GT40QR21(STA1,E,D docget.jsp?did=9834&prodName=GT40QR21
GT40QR21(STA1,E,D
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
auf Bestellung 68 Stücke:
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3+8.20 EUR
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74VHC174FT docget.jsp?did=15747&prodName=74VHC174FT
74VHC174FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 6BIT 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LCX374FT docget.jsp?did=15176&prodName=74LCX374FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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TLP2710(E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 235 Stücke:
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8+2.46 EUR
11+1.75 EUR
125+1.29 EUR
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TCK22925G,LF TCK22921G_datasheet_en_20211118.pdf?did=53117&prodName=TCK22921G
TCK22925G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
Produkt ist nicht verfügbar
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TCK22925G,LF TCK22921G_datasheet_en_20211118.pdf?did=53117&prodName=TCK22921G
TCK22925G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
auf Bestellung 4275 Stücke:
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Anzahl Preis
24+0.76 EUR
27+0.65 EUR
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500+0.36 EUR
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74HCT4053D 74HCT4053D_datasheet_en_20201117.pdf?did=54977&prodName=74HCT4053D
74HCT4053D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
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2500+0.20 EUR
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74HCT4053D 74HCT4053D_datasheet_en_20201117.pdf?did=54977&prodName=74HCT4053D
74HCT4053D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
auf Bestellung 12201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
51+0.35 EUR
58+0.31 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
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BAV70,LM docget.jsp?did=55438&prodName=BAV70
BAV70,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.05 EUR
6000+0.04 EUR
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BAV70,LM docget.jsp?did=55438&prodName=BAV70
BAV70,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 6047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
122+0.14 EUR
167+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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TLP785(TELS,F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Produkt ist nicht verfügbar
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CUZ30V,H3F
CUZ30V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
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CUZ30V,H3F
CUZ30V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 12971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
104+0.17 EUR
178+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 72
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TK25S06N1L,LXHQ docget.jsp?did=29750&prodName=TK25S06N1L
TK25S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
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TK25S06N1L,LXHQ docget.jsp?did=29750&prodName=TK25S06N1L
TK25S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
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TK25S06N1L,LQ
TK25S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Produkt ist nicht verfügbar
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BAS516,H3F BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516
BAS516,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.05 EUR
Mindestbestellmenge: 4000
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BAS516,H3F BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516
BAS516,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 7484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
92+0.19 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 63
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RN1131MFV,L3F docget.jsp?did=727&prodName=RN1132MFV
RN1131MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.04 EUR
Mindestbestellmenge: 8000
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RN1131MFV,L3F docget.jsp?did=727&prodName=RN1132MFV
RN1131MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 72
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RN2131MFV,L3F docget.jsp?did=1075&prodName=RN2131MFV
RN2131MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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RN2131MFV,L3F docget.jsp?did=1075&prodName=RN2131MFV
RN2131MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
182+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 72
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TLP293-4(GBTPR,E TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(GBTPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.06 EUR
Mindestbestellmenge: 2000
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TLP293-4(GBTPR,E TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(GBTPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+1.83 EUR
100+1.38 EUR
500+1.18 EUR
1000+1.12 EUR
Mindestbestellmenge: 7
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TLP187(TPR,E TLP187_datasheet_en_20191119.pdf?did=13690&prodName=TLP187
TLP187(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
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TLP187(TPR,E TLP187_datasheet_en_20191119.pdf?did=13690&prodName=TLP187
TLP187(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER ROHS SO6 T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.26 EUR
100+0.87 EUR
500+0.71 EUR
1000+0.67 EUR
Mindestbestellmenge: 9
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2SC2712-BL,LF docget.jsp?did=19227&prodName=2SC2712
2SC2712-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
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2SC2712-BL,LF docget.jsp?did=19227&prodName=2SC2712
2SC2712-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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TB67H450AFNG,EL datasheet_en_20201217.pdf?did=70454
TB67H450AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.96 EUR
7000+0.94 EUR
Mindestbestellmenge: 3500
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TB67H450AFNG,EL datasheet_en_20201217.pdf?did=70454
TB67H450AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 9293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.31 EUR
25+1.95 EUR
100+1.54 EUR
250+1.34 EUR
500+1.21 EUR
1000+1.11 EUR
Mindestbestellmenge: 5
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TLP188(GB,E TLP188_datasheet_en_20191119.pdf?did=13932&prodName=TLP188
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
21+0.86 EUR
125+0.57 EUR
Mindestbestellmenge: 14
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TLP628M(LF5,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(LF5,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
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TLP628M(LF1,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(LF1,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.95 EUR
Mindestbestellmenge: 13
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TLP628M(GB-LF1,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(GB-LF1,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
24+0.76 EUR
Mindestbestellmenge: 17
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TLP628MF(GB,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628MF(GB,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.95 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLP628M(GB,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(GB,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLP628M(GB-LF5,E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(GB-LF5,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.95 EUR
100+0.70 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLP628M(E TLP628M_datasheet_en_20181206.pdf?did=63802&prodName=TLP628M
TLP628M(E
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; DIP4; ROHS;
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.93 EUR
100+0.61 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TK110E65Z,S1X TK110E65Z_datasheet_en_20220201.pdf?did=139853&prodName=TK110E65Z
TK110E65Z,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 110MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.64 EUR
Mindestbestellmenge: 3
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RN2105,LXHF(CT docget.jsp?did=18841&prodName=RN2105
RN2105,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2105,LXHF(CT docget.jsp?did=18841&prodName=RN2105
RN2105,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
RN2106,LXHF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2106,LXHF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
RN2102,LXHF(CT docget.jsp?did=18841&prodName=RN2102
RN2102,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN2102,LXHF(CT docget.jsp?did=18841&prodName=RN2102
RN2102,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LXHF(CT docget.jsp?did=18845&prodName=RN2107
RN2107,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LXHF(CT docget.jsp?did=18845&prodName=RN2107
RN2107,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
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