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74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
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2500+0.29 EUR
5000+0.26 EUR
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74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Packaging: Cut Tape (CT)
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
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23+0.78 EUR
28+0.65 EUR
100+0.5 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
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TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
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TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MG09ACP18TA Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V-12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
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MG09ACP18TE Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
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TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
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TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 1072 Stücke:
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TTC011B,Q TTC011B,Q Toshiba Semiconductor and Storage docget.jsp?did=35681&prodName=TTC011B Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
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TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TK6R8A08QM,S4X TK6R8A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70423&prodName=TK6R8A08QM Description: UMOS10 TO-220SIS 80V 6.8MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK170V65Z,LQ TK170V65Z,LQ Toshiba Semiconductor and Storage TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4938 Stücke:
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TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
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TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage docget.jsp?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
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TLP5752H(TP,E TLP5752H(TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP5752H(D4-TP,E TLP5752H(D4-TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP5752H(E TLP5752H(E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
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TLP2958(D4-MBT1,F) Toshiba Semiconductor and Storage TLP2958_Rev3.0_11-30-15.pdf Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TB67H401FTG,EL TB67H401FTG,EL Toshiba Semiconductor and Storage TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
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4000+3.57 EUR
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TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
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TK090E65Z,S1X TK090E65Z,S1X Toshiba Semiconductor and Storage docget.jsp?did=139849&prodName=TK090E65Z Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
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TCR2LN36,LF(SE TCR2LN36,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TCR2LN36,LF(SE TCR2LN36,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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TCR2LN115,LF(SE TCR2LN115,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.15V I=200MA
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TCR2LN115,LF(SE TCR2LN115,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=1.15V I=200MA
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100+0.3 EUR
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500+0.2 EUR
1000+0.16 EUR
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74HC4066D 74HC4066D Toshiba Semiconductor and Storage 74HC4066D_datasheet_en_20201124.pdf?did=55443&prodName=74HC4066D Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
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TB67H451AFNG,EL TB67H451AFNG,EL Toshiba Semiconductor and Storage TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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TB67H451AFNG,EL TB67H451AFNG,EL Toshiba Semiconductor and Storage TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
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TC7WH00FU,LJ(CT TC7WH00FU,LJ(CT Toshiba Semiconductor and Storage TC7WH00FU_datasheet_en_20200205.pdf?did=20115&prodName=TC7WH00FU Description: IC GATE NAND 2CH 2-INP 8SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 8-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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TC7WH241FUTE12LF TC7WH241FUTE12LF Toshiba Semiconductor and Storage TC7WH241FU%2CFK.pdf Description: IC BUFFER NON-INVERT 5.5V SM8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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TK10E80W,S1X Toshiba Semiconductor and Storage TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
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DF2B36FU,H3XHF DF2B36FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=36248&prodName=DF2B36FU Description: TVS DIODE 28VWM 60VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DF2B36FU,H3XHF DF2B36FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=36248&prodName=DF2B36FU Description: TVS DIODE 28VWM 60VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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74LCX573FT 74LCX573FT Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: IC D-TYPE 8:8 20-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
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74LCX573FT 74LCX573FT Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: IC D-TYPE 8:8 20-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
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SSM6L12TU,LF SSM6L12TU,LF Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SSM6L12TU,LF SSM6L12TU,LF Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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TLP9121A(KBDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(MBHAGBTLF Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9121A(YSKGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(NCNGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(FD-GBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(BYDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(OGIGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(ASTGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(CK-GBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(PSDGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP9121A(TOYOGTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
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TLP9121A(MURGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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TLP9121A(PASGBTL,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
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TLP701H(GEHC,F) Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
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TLP701HF(D4MBSTP,F Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
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TLP701H(D4-TP,F) Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
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TLP701H(D4-MBSTP,F Toshiba Semiconductor and Storage TLP701H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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TLP701HF(D4-TP,F) Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(TP,F) Toshiba Semiconductor and Storage TLP701HF_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
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74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.29 EUR
5000+0.26 EUR
Mindestbestellmenge: 2500 Stücke
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74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOPB
Input Capacitance: 4 pF
Packaging: Cut Tape (CT)
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
auf Bestellung 5710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.3 EUR
23+0.78 EUR
28+0.65 EUR
100+0.5 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
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TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.63 EUR
Mindestbestellmenge: 1000 Stücke
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TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.84 EUR
10+3.14 EUR
100+2.17 EUR
500+1.76 EUR
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SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MG09ACP18TA p_l_mg09aca16tay_210202072836_1_0_0e.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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MG09ACP18TE p_l_mg09aca16tay_210202072836_1_0_0e.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 1072 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
26+0.69 EUR
37+0.49 EUR
41+0.43 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 26 Stücke
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TTC011B,Q docget.jsp?did=35681&prodName=TTC011B
TTC011B,Q
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.72 EUR
17+1.08 EUR
Mindestbestellmenge: 11 Stücke
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TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.09 EUR
Mindestbestellmenge: 2500 Stücke
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TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.57 EUR
10+2.29 EUR
100+1.79 EUR
500+1.47 EUR
1000+1.16 EUR
Mindestbestellmenge: 7 Stücke
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TK6R8A08QM,S4X docget.jsp?did=70423&prodName=TK6R8A08QM
TK6R8A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
Mindestbestellmenge: 10 Stücke
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TK170V65Z,LQ TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z
TK170V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.25 EUR
10+5.5 EUR
100+3.94 EUR
500+3.81 EUR
Mindestbestellmenge: 3 Stücke
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TK6R7P06PL,RQ docget.jsp?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.76 EUR
5000+0.71 EUR
7500+0.68 EUR
12500+0.65 EUR
17500+0.64 EUR
Mindestbestellmenge: 2500 Stücke
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TK6R7P06PL,RQ docget.jsp?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 21266 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7 Stücke
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TLP5752H(TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP5752H(D4-TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP5752H(E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
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TLP2958(D4-MBT1,F) TLP2958_Rev3.0_11-30-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TB67H401FTG,EL TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG
TB67H401FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+3.57 EUR
Mindestbestellmenge: 4000 Stücke
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TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
auf Bestellung 3920 Stücke:
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4+5.74 EUR
10+3.76 EUR
100+2.63 EUR
500+2.15 EUR
1000+1.99 EUR
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TK090E65Z,S1X docget.jsp?did=139849&prodName=TK090E65Z
TK090E65Z,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 73 Stücke:
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AnzahlPreis
2+9.01 EUR
10+8.09 EUR
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TCR2LN36,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN36,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2LN36,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN36,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9371 Stücke:
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AnzahlPreis
63+0.28 EUR
98+0.18 EUR
111+0.16 EUR
130+0.14 EUR
250+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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TCR2LN115,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
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AnzahlPreis
10000+0.12 EUR
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TCR2LN115,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
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74HC4066D 74HC4066D_datasheet_en_20201124.pdf?did=55443&prodName=74HC4066D
74HC4066D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 12149 Stücke:
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AnzahlPreis
29+0.62 EUR
42+0.43 EUR
47+0.38 EUR
100+0.33 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.28 EUR
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TB67H451AFNG,EL TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG
TB67H451AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3500+0.95 EUR
7000+0.93 EUR
Mindestbestellmenge: 3500 Stücke
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TB67H451AFNG,EL TB67H451AFNG_datasheet_en_20201217.pdf?did=70456&prodName=TB67H451AFNG
TB67H451AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-HSOP
Voltage - Load: 4.5V ~ 44V
Technology: BiCDMOS
Applications: General Purpose
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Current - Output: 3.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
auf Bestellung 10110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
13+1.43 EUR
25+1.29 EUR
100+1.15 EUR
250+1.08 EUR
500+1.03 EUR
1000+1 EUR
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TC7WH00FU,LJ(CT TC7WH00FU_datasheet_en_20200205.pdf?did=20115&prodName=TC7WH00FU
TC7WH00FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP 8SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 8-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 14983 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
39+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
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TC7WH241FUTE12LF TC7WH241FU%2CFK.pdf
TC7WH241FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK10E80W,S1X TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.63 EUR
50+4.47 EUR
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DF2B36FU,H3XHF docget.jsp?did=36248&prodName=DF2B36FU
DF2B36FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.1 EUR
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DF2B36FU,H3XHF docget.jsp?did=36248&prodName=DF2B36FU
DF2B36FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 3833 Stücke:
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AnzahlPreis
44+0.4 EUR
67+0.26 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
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74LCX573FT docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 15000 Stücke:
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AnzahlPreis
2500+0.23 EUR
7500+0.22 EUR
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74LCX573FT docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
auf Bestellung 21377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
45+0.39 EUR
51+0.35 EUR
100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
1000+0.25 EUR
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SSM6L12TU,LF docget.jsp?did=22374&prodName=SSM6L12TU
SSM6L12TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6L12TU,LF docget.jsp?did=22374&prodName=SSM6L12TU
SSM6L12TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
25+0.73 EUR
100+0.5 EUR
500+0.37 EUR
1000+0.28 EUR
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TLP9121A(KBDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(MBHAGBTLF
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9121A(YSKGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(NCNGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(FD-GBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(BYDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(OGIGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(ASTGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(HNEGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(CK-GBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(PSDGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP9121A(TOYOGTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP9121A(MURGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLP9121A(PASGBTL,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(GEHC,F) TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(D4MBSTP,F TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(D4-TP,F) TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701H(D4-MBSTP,F TLP701H_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(D4-TP,F) TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP701HF(TP,F) TLP701HF_Rev7.0_2-17-20.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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