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Preis
RN2105MFV,L3F(CT RN2105MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2105MFV,L3F(CT RN2105MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
auf Bestellung 6627 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
58+0.31 EUR
106+0.17 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
Mindestbestellmenge: 53
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RN2105,LF(CT RN2105,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2105 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
Mindestbestellmenge: 3000
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RN2105,LF(CT RN2105,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2105 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
60+0.30 EUR
113+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
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RN2108,LXHF(CT RN2108,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Produkt ist nicht verfügbar
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RN2108,LXHF(CT RN2108,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Produkt ist nicht verfügbar
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RN2102MFV,L3XHF(CT RN2102MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2102MFV,L3XHF(CT RN2102MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2101,LXHF(CT RN2101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
Mindestbestellmenge: 3000
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RN2101,LXHF(CT RN2101,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
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RN2101,LF(CT RN2101,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
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RN2104,LXHF(CT RN2104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
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RN2104,LXHF(CT RN2104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
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RN2107MFV,L3XHF(CT RN2107MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5884&prodName=RN2107MFV Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2107MFV,L3XHF(CT RN2107MFV,L3XHF(CT Toshiba Semiconductor and Storage docget.jsp?did=5884&prodName=RN2107MFV Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2107MFV,L3F(CT RN2107MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5884&prodName=RN2107MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2107MFV,L3F(CT RN2107MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5884&prodName=RN2107MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2108,LF(CT RN2108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2108,LF(CT RN2108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
60+0.30 EUR
113+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
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RN2107,LF(CT RN2107,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2107,LF(CT RN2107,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
52+0.34 EUR
Mindestbestellmenge: 42
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RN2109,LF(CT RN2109,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2109 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2109,LF(CT RN2109,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2109 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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TTC015B,Q Toshiba Semiconductor and Storage TTC015B_datasheet_en_20150122.pdf?did=28833&prodName=TTC015B Description: PB-F POWER TRANSISTOR TO-126N PC
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
19+0.95 EUR
25+0.89 EUR
80+0.66 EUR
250+0.63 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2903,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2903,LXHF(CT RN2903,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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TAR5S16U(TE85L,F) TAR5S16U(TE85L,F) Toshiba Semiconductor and Storage TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U Description: IC REG LINEAR 1.6V 200MA UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
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TAR5S16U(TE85L,F) TAR5S16U(TE85L,F) Toshiba Semiconductor and Storage TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U Description: IC REG LINEAR 1.6V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+0.90 EUR
Mindestbestellmenge: 17
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TLP9148J(YZK-TL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2066(TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP2066(V4-TPL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2066(V4-TPR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2066(TPR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP5752(D4-LF4,E TLP5752(D4-LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+3.03 EUR
125+2.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(LF4,E TLP5752(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=15367&prodName=TLP5752 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.12 EUR
10+2.97 EUR
Mindestbestellmenge: 5
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TLP5752H(LF4,E TLP5752H(LF4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.40 EUR
125+1.79 EUR
Mindestbestellmenge: 6
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TLP5752H(D4LF4,E TLP5752H(D4LF4,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.40 EUR
125+1.79 EUR
Mindestbestellmenge: 6
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74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.29 EUR
5000+0.26 EUR
Mindestbestellmenge: 2500
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74VHC273FT 74VHC273FT Toshiba Semiconductor and Storage 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5710 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.30 EUR
23+0.78 EUR
28+0.65 EUR
100+0.50 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 14
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TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.63 EUR
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TK60F10N1L,LXGQ TK60F10N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.84 EUR
10+3.14 EUR
100+2.17 EUR
500+1.76 EUR
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SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10333&prodName=SSM6K404TU Description: MOSFET N-CH 20V 3A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 2737 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
26+0.69 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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MG09ACP18TA Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG09ACP18TE Toshiba Semiconductor and Storage p_l_mg09aca16tay_210202072836_1_0_0e.pdf Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
6000+0.33 EUR
9000+0.31 EUR
15000+0.30 EUR
21000+0.29 EUR
Mindestbestellmenge: 3000
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TC7USB40MU,LF(S2E TC7USB40MU,LF(S2E Toshiba Semiconductor and Storage docget.jsp?did=13632&prodName=TC7USB40MU Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 43193 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.60 EUR
19+0.97 EUR
25+0.80 EUR
100+0.61 EUR
250+0.52 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 11
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TTC011B,Q TTC011B,Q Toshiba Semiconductor and Storage docget.jsp?did=35681&prodName=TTC011B Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
auf Bestellung 386 Stücke:
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11+1.67 EUR
16+1.14 EUR
250+0.72 EUR
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TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.09 EUR
Mindestbestellmenge: 2500
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TK5R1P08QM,RQ TK5R1P08QM,RQ Toshiba Semiconductor and Storage TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
10+2.29 EUR
100+1.79 EUR
500+1.47 EUR
1000+1.16 EUR
Mindestbestellmenge: 7
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TK6R8A08QM,S4X TK6R8A08QM,S4X Toshiba Semiconductor and Storage docget.jsp?did=70423&prodName=TK6R8A08QM Description: UMOS10 TO-220SIS 80V 6.8MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
Mindestbestellmenge: 10
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TK170V65Z,LQ TK170V65Z,LQ Toshiba Semiconductor and Storage docget.jsp?did=67740&prodName=TK170V65Z Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.43 EUR
10+4.92 EUR
100+4.08 EUR
Mindestbestellmenge: 3
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TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.61 EUR
5000+0.58 EUR
12500+0.55 EUR
Mindestbestellmenge: 2500
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TK6R7P06PL,RQ TK6R7P06PL,RQ Toshiba Semiconductor and Storage TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 25753 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
15+1.20 EUR
100+0.94 EUR
500+0.79 EUR
1000+0.65 EUR
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TLP5752H(TP,E TLP5752H(TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4-TP,E TLP5752H(D4-TP,E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(E TLP5752H(E Toshiba Semiconductor and Storage TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP2958(D4-MBT1,F) Toshiba Semiconductor and Storage TLP2958_Rev3.0_11-30-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TB67H401FTG,EL TB67H401FTG,EL Toshiba Semiconductor and Storage TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+3.54 EUR
Mindestbestellmenge: 4000
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TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+3.76 EUR
100+2.63 EUR
500+2.15 EUR
1000+1.99 EUR
Mindestbestellmenge: 4
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RN2105MFV,L3F(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2105MFV,L3F(CT docget.jsp?did=5883&prodName=RN2105MFV
RN2105MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
auf Bestellung 6627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
58+0.31 EUR
106+0.17 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
Mindestbestellmenge: 53
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RN2105,LF(CT docget.jsp?did=18841&prodName=RN2105
RN2105,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
Mindestbestellmenge: 3000
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RN2105,LF(CT docget.jsp?did=18841&prodName=RN2105
RN2105,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
60+0.30 EUR
113+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
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RN2108,LXHF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Produkt ist nicht verfügbar
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RN2108,LXHF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Produkt ist nicht verfügbar
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RN2102MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2102MFV
RN2102MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2102MFV,L3XHF(CT docget.jsp?did=5883&prodName=RN2102MFV
RN2102MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2101,LXHF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
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RN2101,LXHF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
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RN2101,LF(CT docget.jsp?did=18841&prodName=RN2101
RN2101,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2104,LXHF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2107MFV,L3XHF(CT docget.jsp?did=5884&prodName=RN2107MFV
RN2107MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2107MFV,L3XHF(CT docget.jsp?did=5884&prodName=RN2107MFV
RN2107MFV,L3XHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Produkt ist nicht verfügbar
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RN2107MFV,L3F(CT docget.jsp?did=5884&prodName=RN2107MFV
RN2107MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2107MFV,L3F(CT docget.jsp?did=5884&prodName=RN2107MFV
RN2107MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2108,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2108,LF(CT docget.jsp?did=18845&prodName=RN2108
RN2108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
60+0.30 EUR
113+0.16 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
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RN2107,LF(CT docget.jsp?did=18845&prodName=RN2107
RN2107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CT docget.jsp?did=18845&prodName=RN2107
RN2107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
52+0.34 EUR
Mindestbestellmenge: 42
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RN2109,LF(CT docget.jsp?did=18845&prodName=RN2109
RN2109,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2109,LF(CT docget.jsp?did=18845&prodName=RN2109
RN2109,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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TTC015B,Q TTC015B_datasheet_en_20150122.pdf?did=28833&prodName=TTC015B
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR TO-126N PC
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
19+0.95 EUR
25+0.89 EUR
80+0.66 EUR
250+0.63 EUR
Mindestbestellmenge: 16
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RN2903,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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TAR5S16U(TE85L,F) TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U
TAR5S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
Produkt ist nicht verfügbar
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TAR5S16U(TE85L,F) TAR5S16U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S16U
TAR5S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 850 µA
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
20+0.90 EUR
Mindestbestellmenge: 17
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TLP9148J(YZK-TL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2066(V4-TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2066(TPR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Produkt ist nicht verfügbar
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TLP5752(D4-LF4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+3.03 EUR
125+2.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752(LF4,E docget.jsp?did=15367&prodName=TLP5752
TLP5752(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.12 EUR
10+2.97 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(LF4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.40 EUR
125+1.79 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLP5752H(D4LF4,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(D4LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.40 EUR
125+1.79 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.29 EUR
5000+0.26 EUR
Mindestbestellmenge: 2500
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74VHC273FT 74VHC273FT_datasheet_en_20170222.pdf?did=14592&prodName=74VHC273FT
74VHC273FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
23+0.78 EUR
28+0.65 EUR
100+0.50 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 14
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TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.63 EUR
Mindestbestellmenge: 1000
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TK60F10N1L,LXGQ docget.jsp?did=58169&prodName=TK60F10N1L
TK60F10N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.14 EUR
100+2.17 EUR
500+1.76 EUR
Mindestbestellmenge: 4
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SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6K404TU,LF docget.jsp?did=10333&prodName=SSM6K404TU
SSM6K404TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 2737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.69 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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MG09ACP18TA p_l_mg09aca16tay_210202072836_1_0_0e.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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MG09ACP18TE p_l_mg09aca16tay_210202072836_1_0_0e.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.33 EUR
9000+0.31 EUR
15000+0.30 EUR
21000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7USB40MU,LF(S2E docget.jsp?did=13632&prodName=TC7USB40MU
TC7USB40MU,LF(S2E
Hersteller: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 10UQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1.5GHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 43193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
19+0.97 EUR
25+0.80 EUR
100+0.61 EUR
250+0.52 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 11
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TTC011B,Q docget.jsp?did=35681&prodName=TTC011B
TTC011B,Q
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-126N
Packaging: Tray
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 1.5 W
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
16+1.14 EUR
250+0.72 EUR
Mindestbestellmenge: 11
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TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.09 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK5R1P08QM,RQ TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM
TK5R1P08QM,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+2.29 EUR
100+1.79 EUR
500+1.47 EUR
1000+1.16 EUR
Mindestbestellmenge: 7
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TK6R8A08QM,S4X docget.jsp?did=70423&prodName=TK6R8A08QM
TK6R8A08QM,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 6.8MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
Mindestbestellmenge: 10
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TK170V65Z,LQ docget.jsp?did=67740&prodName=TK170V65Z
TK170V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
10+4.92 EUR
100+4.08 EUR
Mindestbestellmenge: 3
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TK6R7P06PL,RQ TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
5000+0.58 EUR
12500+0.55 EUR
Mindestbestellmenge: 2500
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TK6R7P06PL,RQ TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL
TK6R7P06PL,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 25753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.20 EUR
100+0.94 EUR
500+0.79 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
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TLP5752H(TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(D4-TP,E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP5752H(E TLP5752H_datasheet_en_20200901.pdf?did=66188&prodName=TLP5752H
TLP5752H(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP2958(D4-MBT1,F) TLP2958_Rev3.0_11-30-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TB67H401FTG,EL TB67H401FTG_datasheet_en_20180426.pdf?did=61997&prodName=TB67H401FTG
TB67H401FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+3.54 EUR
Mindestbestellmenge: 4000
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TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
10+3.76 EUR
100+2.63 EUR
500+2.15 EUR
1000+1.99 EUR
Mindestbestellmenge: 4
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