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1SS181,LF 1SS181,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3263 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.048 EUR
6000+0.043 EUR
9000+0.041 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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1SS181,LF 1SS181,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3263 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 17840 Stücke:
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77+0.23 EUR
108+0.16 EUR
190+0.093 EUR
500+0.075 EUR
1000+0.07 EUR
Mindestbestellmenge: 77
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1SS187,LF 1SS187,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3268 Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS187,LF 1SS187,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3268 Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 2820 Stücke:
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91+0.19 EUR
122+0.14 EUR
164+0.11 EUR
500+0.084 EUR
1000+0.074 EUR
Mindestbestellmenge: 91
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GT20J341,S4X(S Toshiba Semiconductor and Storage GT20J341_datasheet_en_20140107.pdf?did=12743&prodName=GT20J341 Description: DISCRETE IGBT TRANSISTOR TO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
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10+3.25 EUR
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74VHC00FT 74VHC00FT Toshiba Semiconductor and Storage docget.jsp?did=14032&prodName=74VHC00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
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74VHC00FT 74VHC00FT Toshiba Semiconductor and Storage docget.jsp?did=14032&prodName=74VHC00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 4277 Stücke:
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34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
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CMF03(TE12L,Q,M) CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03 Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Produkt ist nicht verfügbar
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CMF03(TE12L,Q,M) CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03 Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
auf Bestellung 2521 Stücke:
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19+0.95 EUR
30+0.59 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
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TPCC8104,L1Q(CM TPCC8104,L1Q(CM Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8104,L1Q TPCC8104,L1Q Toshiba Semiconductor and Storage docget.jsp?did=6090&prodName=TPCC8104 Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
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TLP5772H(D4,E TLP5772H(D4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 115 Stücke:
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5+4.28 EUR
10+2.8 EUR
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TLP5772H(TP4,E TLP5772H(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(LF4,E TLP5772H(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 125 Stücke:
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4+4.52 EUR
10+2.98 EUR
125+2.14 EUR
Mindestbestellmenge: 4
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TLP5772H(TP,E TLP5772H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(D4LF4,E TLP5772H(D4LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
auf Bestellung 123 Stücke:
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5+3.63 EUR
10+2.38 EUR
Mindestbestellmenge: 5
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TLP5772H(E TLP5772H(E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 123 Stücke:
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5+4.28 EUR
10+2.8 EUR
Mindestbestellmenge: 5
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DF2B29FU,H3XHF DF2B29FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=29929&prodName=DF2B29FU Description: TVS DIODE 24VWM 47VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.1 EUR
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DF2B29FU,H3XHF DF2B29FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=29929&prodName=DF2B29FU Description: TVS DIODE 24VWM 47VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3730 Stücke:
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44+0.4 EUR
67+0.26 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
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TCR8BM30A,L3F TCR8BM30A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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5000+0.2 EUR
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TCR8BM30A,L3F TCR8BM30A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9970 Stücke:
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14+1.28 EUR
23+0.77 EUR
28+0.64 EUR
100+0.48 EUR
250+0.41 EUR
500+0.36 EUR
1000+0.32 EUR
2500+0.28 EUR
Mindestbestellmenge: 14
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CRS30I30A(TE85L,QM CRS30I30A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=14967&prodName=CRS30I30A Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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CRS30I30A(TE85L,QM CRS30I30A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=14967&prodName=CRS30I30A Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2984 Stücke:
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21+0.86 EUR
27+0.67 EUR
100+0.4 EUR
500+0.37 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
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TA78DS10BP(6MB1,FM TA78DS10BP(6MB1,FM Toshiba Semiconductor and Storage TA78DSxxBP_05CP_2009-09-30.pdf Description: IC REG LINEAR 10V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.4 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.4 mA
Produkt ist nicht verfügbar
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2SA2061(TE85L,F) 2SA2061(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20449&prodName=2SA2061 Description: TRANS PNP 20V 2.5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SA2061(TE85L,F) 2SA2061(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20449&prodName=2SA2061 Description: TRANS PNP 20V 2.5A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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TTA1452B,S4X TTA1452B,S4X Toshiba Semiconductor and Storage docget.jsp?did=13850&prodName=TTA1452B&returnFlg=false Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.29 EUR
10+2.77 EUR
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RN1903,LXHF(CT RN1903,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1903,LXHF(CT RN1903,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
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TLP781(D4-Y-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP2958(D4-TP1,F) Toshiba Semiconductor and Storage TLP2958_Rev3.0_11-30-15.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPC6503(TE85L,F,M) Toshiba Semiconductor and Storage Description: TRANS NPN 30V 1.5A VS-6
Produkt ist nicht verfügbar
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RN1301,LXHF RN1301,LXHF Toshiba Semiconductor and Storage RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.097 EUR
9000+0.092 EUR
Mindestbestellmenge: 3000
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RN1301,LXHF RN1301,LXHF Toshiba Semiconductor and Storage RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 11605 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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1SV279,H3F 1SV279,H3F Toshiba Semiconductor and Storage 1SV279_datasheet_en_20140301.pdf?did=2793&prodName=1SV279 Description: PB-F ESC VARICAP DIODE (HF), IR=
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
1SV279,H3F 1SV279,H3F Toshiba Semiconductor and Storage 1SV279_datasheet_en_20140301.pdf?did=2793&prodName=1SV279 Description: PB-F ESC VARICAP DIODE (HF), IR=
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 6853 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
Mindestbestellmenge: 28
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RN4904,LXHF(CT RN4904,LXHF(CT Toshiba Semiconductor and Storage RN4904_datasheet_en_20210824.pdf?did=18954&prodName=RN4904 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4904,LXHF(CT RN4904,LXHF(CT Toshiba Semiconductor and Storage RN4904_datasheet_en_20210824.pdf?did=18954&prodName=RN4904 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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RN1904,LXHF(CT RN1904,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1904,LXHF(CT RN1904,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
37+0.48 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.18 EUR
Mindestbestellmenge: 30
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RN4984,LXHF(CT RN4984,LXHF(CT Toshiba Semiconductor and Storage RN4984_datasheet_en_20210824.pdf?did=18978&prodName=RN4984 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4984,LXHF(CT RN4984,LXHF(CT Toshiba Semiconductor and Storage RN4984_datasheet_en_20210824.pdf?did=18978&prodName=RN4984 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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RN1904FE,LXHF(CT RN1904FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN1904FE,LXHF(CT RN1904FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+0.49 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 27
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RN2904,LXHF(CT RN2904,LXHF(CT Toshiba Semiconductor and Storage RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904,LXHF(CT RN2904,LXHF(CT Toshiba Semiconductor and Storage RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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1SV308,L3F 1SV308,L3F Toshiba Semiconductor and Storage 1SV308_datasheet_en_20140301.pdf?did=2836&prodName=1SV308 Description: RF DIODE PIN 30V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SV308,L3F 1SV308,L3F Toshiba Semiconductor and Storage 1SV308_datasheet_en_20140301.pdf?did=2836&prodName=1SV308 Description: RF DIODE PIN 30V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
auf Bestellung 6336 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
34+0.52 EUR
39+0.45 EUR
100+0.29 EUR
250+0.24 EUR
500+0.19 EUR
1000+0.15 EUR
2500+0.13 EUR
Mindestbestellmenge: 26
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TCR2LN27,LF(SE TCR2LN27,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.7V I=200MA
Produkt ist nicht verfügbar
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TCR2LN27,LF(SE TCR2LN27,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.7V I=200MA
auf Bestellung 6555 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
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TCR2EN28,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EN28,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
auf Bestellung 7550 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
35+0.51 EUR
39+0.46 EUR
100+0.32 EUR
250+0.27 EUR
500+0.22 EUR
1000+0.17 EUR
2500+0.15 EUR
5000+0.14 EUR
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TCR2LN28,LF(SE TCR2LN28,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.8V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN28,LF(SE TCR2LN28,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.8V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
auf Bestellung 4484 Stücke:
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29+0.62 EUR
39+0.46 EUR
43+0.42 EUR
100+0.29 EUR
250+0.24 EUR
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TCR3UM185A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM185A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 9985 Stücke:
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22+0.81 EUR
29+0.61 EUR
32+0.55 EUR
100+0.38 EUR
250+0.32 EUR
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1000+0.2 EUR
2500+0.18 EUR
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TCR3UG25A,LF TCR3UG25A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 5000 Stücke:
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5000+0.2 EUR
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TCR3UG25A,LF TCR3UG25A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 13999 Stücke:
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24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
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TCR3UM175A,LF(SE TCR3UM175A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
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10000+0.15 EUR
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TCR3UM175A,LF(SE TCR3UM175A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
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23+0.77 EUR
31+0.58 EUR
34+0.52 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
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1SS181,LF datasheet_en_20221128.pdf?did=3263
1SS181,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.048 EUR
6000+0.043 EUR
9000+0.041 EUR
15000+0.04 EUR
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1SS181,LF datasheet_en_20221128.pdf?did=3263
1SS181,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 17840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
108+0.16 EUR
190+0.093 EUR
500+0.075 EUR
1000+0.07 EUR
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1SS187,LF datasheet_en_20221128.pdf?did=3268
1SS187,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS187,LF datasheet_en_20221128.pdf?did=3268
1SS187,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
122+0.14 EUR
164+0.11 EUR
500+0.084 EUR
1000+0.074 EUR
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GT20J341,S4X(S GT20J341_datasheet_en_20140107.pdf?did=12743&prodName=GT20J341
Hersteller: Toshiba Semiconductor and Storage
Description: DISCRETE IGBT TRANSISTOR TO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.25 EUR
Mindestbestellmenge: 5
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74VHC00FT docget.jsp?did=14032&prodName=74VHC00FT
74VHC00FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
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74VHC00FT docget.jsp?did=14032&prodName=74VHC00FT
74VHC00FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 4277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
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CMF03(TE12L,Q,M) CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03
CMF03(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Produkt ist nicht verfügbar
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CMF03(TE12L,Q,M) CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03
CMF03(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
auf Bestellung 2521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 19
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TPCC8104,L1Q(CM
TPCC8104,L1Q(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
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TPCC8104,L1Q docget.jsp?did=6090&prodName=TPCC8104
TPCC8104,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Produkt ist nicht verfügbar
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TLP5772H(D4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.8 EUR
Mindestbestellmenge: 5
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TLP5772H(TP4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(LF4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+2.98 EUR
125+2.14 EUR
Mindestbestellmenge: 4
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TLP5772H(TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
Produkt ist nicht verfügbar
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TLP5772H(D4LF4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.38 EUR
Mindestbestellmenge: 5
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TLP5772H(E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(E
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.8 EUR
Mindestbestellmenge: 5
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DF2B29FU,H3XHF docget.jsp?did=29929&prodName=DF2B29FU
DF2B29FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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DF2B29FU,H3XHF docget.jsp?did=29929&prodName=DF2B29FU
DF2B29FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
67+0.26 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 44
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TCR8BM30A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM30A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.2 EUR
Mindestbestellmenge: 5000
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TCR8BM30A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM30A,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.77 EUR
28+0.64 EUR
100+0.48 EUR
250+0.41 EUR
500+0.36 EUR
1000+0.32 EUR
2500+0.28 EUR
Mindestbestellmenge: 14
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CRS30I30A(TE85L,QM docget.jsp?did=14967&prodName=CRS30I30A
CRS30I30A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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CRS30I30A(TE85L,QM docget.jsp?did=14967&prodName=CRS30I30A
CRS30I30A(TE85L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
27+0.67 EUR
100+0.4 EUR
500+0.37 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
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TA78DS10BP(6MB1,FM TA78DSxxBP_05CP_2009-09-30.pdf
TA78DS10BP(6MB1,FM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.4 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.4 mA
Produkt ist nicht verfügbar
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2SA2061(TE85L,F) docget.jsp?did=20449&prodName=2SA2061
2SA2061(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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2SA2061(TE85L,F) docget.jsp?did=20449&prodName=2SA2061
2SA2061(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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TTA1452B,S4X docget.jsp?did=13850&prodName=TTA1452B&returnFlg=false
TTA1452B,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.77 EUR
Mindestbestellmenge: 5
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RN1903,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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RN1903,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1903,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
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TLP781(D4-Y-LF6,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2958(D4-TP1,F) TLP2958_Rev3.0_11-30-15.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TPC6503(TE85L,F,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 1.5A VS-6
Produkt ist nicht verfügbar
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RN1301,LXHF RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301
RN1301,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.097 EUR
9000+0.092 EUR
Mindestbestellmenge: 3000
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RN1301,LXHF RN1301_datasheet_en_20210824.pdf?did=18776&prodName=RN1301
RN1301,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 11605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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1SV279,H3F 1SV279_datasheet_en_20140301.pdf?did=2793&prodName=1SV279
1SV279,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
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1SV279,H3F 1SV279_datasheet_en_20140301.pdf?did=2793&prodName=1SV279
1SV279,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 6853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
Mindestbestellmenge: 28
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RN4904,LXHF(CT RN4904_datasheet_en_20210824.pdf?did=18954&prodName=RN4904
RN4904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN4904,LXHF(CT RN4904_datasheet_en_20210824.pdf?did=18954&prodName=RN4904
RN4904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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RN1904,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RN1904,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
37+0.48 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.18 EUR
Mindestbestellmenge: 30
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RN4984,LXHF(CT RN4984_datasheet_en_20210824.pdf?did=18978&prodName=RN4984
RN4984,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN4984,LXHF(CT RN4984_datasheet_en_20210824.pdf?did=18978&prodName=RN4984
RN4984,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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RN1904FE,LXHF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
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Anzahl Preis
4000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 4000
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RN1904FE,LXHF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.49 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.15 EUR
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RN2904,LXHF(CT RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901
RN2904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN2904,LXHF(CT RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901
RN2904,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
64+0.28 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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1SV308,L3F 1SV308_datasheet_en_20140301.pdf?did=2836&prodName=1SV308
1SV308,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
Produkt ist nicht verfügbar
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1SV308,L3F 1SV308_datasheet_en_20140301.pdf?did=2836&prodName=1SV308
1SV308,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 50 mA
auf Bestellung 6336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.52 EUR
39+0.45 EUR
100+0.29 EUR
250+0.24 EUR
500+0.19 EUR
1000+0.15 EUR
2500+0.13 EUR
Mindestbestellmenge: 26
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TCR2LN27,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN27,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
Produkt ist nicht verfügbar
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TCR2LN27,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN27,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
auf Bestellung 6555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
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TCR2EN28,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EN28,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
auf Bestellung 7550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.51 EUR
39+0.46 EUR
100+0.32 EUR
250+0.27 EUR
500+0.22 EUR
1000+0.17 EUR
2500+0.15 EUR
5000+0.14 EUR
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TCR2LN28,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN28,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TCR2LN28,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN28,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
auf Bestellung 4484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
39+0.46 EUR
43+0.42 EUR
100+0.29 EUR
250+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2500+0.14 EUR
Mindestbestellmenge: 29
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TCR3UM185A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM185A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
29+0.61 EUR
32+0.55 EUR
100+0.38 EUR
250+0.32 EUR
500+0.26 EUR
1000+0.2 EUR
2500+0.18 EUR
5000+0.17 EUR
Mindestbestellmenge: 22
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TCR3UG25A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG25A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.2 EUR
Mindestbestellmenge: 5000
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TCR3UG25A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG25A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 13999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
29+0.61 EUR
32+0.56 EUR
100+0.41 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.23 EUR
2500+0.21 EUR
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TCR3UM175A,LF(SE
TCR3UM175A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
Mindestbestellmenge: 10000
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TCR3UM175A,LF(SE
TCR3UM175A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.75V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.573V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.58 EUR
34+0.52 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 23
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