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RN4985FE,LXHF(CT RN4985FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
auf Bestellung 4000 Stücke:
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4000+0.18 EUR
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RN4985FE,LXHF(CT RN4985FE,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=19050&prodName=RN4985FE Description: AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
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27+0.8 EUR
36+0.58 EUR
100+0.37 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 27 Stücke
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RN1905,LXHF(CT RN1905,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
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3000+0.2 EUR
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RN1905,LXHF(CT RN1905,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
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30+0.71 EUR
37+0.57 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.21 EUR
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RN2905,LXHF(CT RN2905,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2905,LXHF(CT RN2905,LXHF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
64+0.33 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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TC7WHU04FK,LJ(CT TC7WHU04FK,LJ(CT Toshiba Semiconductor and Storage TC7WHU04FK_datasheet_en_20170517.pdf?did=54642&prodName=TC7WHU04FK Description: IC INV 3-CIR 3-IN 8-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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3000+0.14 EUR
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TC7WHU04FK,LJ(CT TC7WHU04FK,LJ(CT Toshiba Semiconductor and Storage TC7WHU04FK_datasheet_en_20170517.pdf?did=54642&prodName=TC7WHU04FK Description: IC INV 3-CIR 3-IN 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
auf Bestellung 4724 Stücke:
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59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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RN2401,LXHF RN2401,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
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RN2401,LXHF RN2401,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2401 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
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RN2403,LXHF RN2403,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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RN2403,LXHF RN2403,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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RN1416,LXHF RN1416,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1416 Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
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RN1416,LXHF RN1416,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1416 Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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RN2407,LXHF RN2407,LXHF Toshiba Semiconductor and Storage RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
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RN2407,LXHF RN2407,LXHF Toshiba Semiconductor and Storage RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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RN2417,LXHF RN2417,LXHF Toshiba Semiconductor and Storage RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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RN2417,LXHF RN2417,LXHF Toshiba Semiconductor and Storage RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417 Description: TRANS PREBIAS PNP 50V SMINI
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
Mindestbestellmenge: 34 Stücke
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74HC240D 74HC240D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D description Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 2000 Stücke:
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2000+0.6 EUR
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74HC240D 74HC240D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D description Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
23+0.92 EUR
26+0.82 EUR
100+0.71 EUR
250+0.67 EUR
500+0.63 EUR
1000+0.61 EUR
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HN1A01FU-GR,LF HN1A01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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HN1A01FU-GR,LF HN1A01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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TLP185(GR-TPR,SE TLP185(GR-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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TLP185(GR-TPR,SE TLP185(GR-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 18581 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
33+0.65 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.36 EUR
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TLP715(D4-TP,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Produkt ist nicht verfügbar
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TLP715F(D4-TP,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715(D4-MBS-TP,F Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Produkt ist nicht verfügbar
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TLP715(D4,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(TP,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Produkt ist nicht verfügbar
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TLP715(TP,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(D4,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2710(D4,E TLP2710(D4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 105 Stücke:
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8+2.81 EUR
11+2 EUR
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TLP2710(LF4,E TLP2710(LF4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 133 Stücke:
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8+2.81 EUR
11+2 EUR
125+1.46 EUR
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TLP2710(D4-LF4,E TLP2710(D4-LF4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Input Type: DC
Data Rate: 5MBd
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 11ns, 13ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
auf Bestellung 105 Stücke:
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11+1.93 EUR
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SSM6K341NU,LF SSM6K341NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56020&prodName=SSM6K341NU Description: MOSFET N-CH 60V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6K341NU,LF SSM6K341NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56020&prodName=SSM6K341NU Description: MOSFET N-CH 60V 6A 6UDFNB
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 2154 Stücke:
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15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.45 EUR
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CSLZ6V2,L3F CSLZ6V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V2 Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ6V2,L3F CSLZ6V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V2 Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
auf Bestellung 9284 Stücke:
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56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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CSLZ6V8,L3F CSLZ6V8,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V8 Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ6V8,L3F CSLZ6V8,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V8 Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ30V,L3F CSLZ30V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ30V Description: TVS DIODE 23VWM 51VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ30V,L3F CSLZ30V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ30V Description: TVS DIODE 23VWM 51VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
auf Bestellung 8192 Stücke:
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56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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CSLZ20V,L3F CSLZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ20V Description: TVS DIODE 15VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ20V,L3F CSLZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ20V Description: TVS DIODE 15VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 7387 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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CSLZ16V,L3F CSLZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ16V Description: TVS DIODE 12VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ16V,L3F CSLZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ16V Description: TVS DIODE 12VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ10V,L3F CSLZ10V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ10V Description: TVS DIODE 8VWM 18VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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CSLZ10V,L3F CSLZ10V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ10V Description: TVS DIODE 8VWM 18VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 9190 Stücke:
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56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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CSLZ12V,L3F CSLZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ12V Description: TVS DIODE 9VWM 28VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ12V,L3F CSLZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ12V Description: TVS DIODE 9VWM 28VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ8V2,L3F CSLZ8V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ8V2 Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ8V2,L3F CSLZ8V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ8V2 Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
auf Bestellung 9864 Stücke:
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56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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2SD2257(CANO,Q,M) 2SD2257(CANO,Q,M) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,NIKKIQ(J 2SD2257,NIKKIQ(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257(Q,M) 2SD2257(Q,M) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Produkt ist nicht verfügbar
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2SD2257(CANO,A,Q) 2SD2257(CANO,A,Q) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,Q(J 2SD2257,Q(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,KEHINQ(J 2SD2257,KEHINQ(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Produkt ist nicht verfügbar
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74HC541D 74HC541D Toshiba Semiconductor and Storage 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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RN4985FE,LXHF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
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AnzahlPrivatkunde
4000+0.18 EUR
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RN4985FE,LXHF(CT docget.jsp?did=19050&prodName=RN4985FE
RN4985FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
auf Bestellung 7980 Stücke:
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AnzahlPrivatkunde
27+0.8 EUR
36+0.58 EUR
100+0.37 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.18 EUR
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RN1905,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1905,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
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3000+0.2 EUR
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RN1905,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1905,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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30+0.71 EUR
37+0.57 EUR
100+0.39 EUR
500+0.3 EUR
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RN2905,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2905,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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RN2905,LXHF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2905,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
auf Bestellung 2970 Stücke:
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AnzahlPrivatkunde
42+0.5 EUR
64+0.33 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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TC7WHU04FK,LJ(CT TC7WHU04FK_datasheet_en_20170517.pdf?did=54642&prodName=TC7WHU04FK
TC7WHU04FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INV 3-CIR 3-IN 8-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.14 EUR
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TC7WHU04FK,LJ(CT TC7WHU04FK_datasheet_en_20170517.pdf?did=54642&prodName=TC7WHU04FK
TC7WHU04FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INV 3-CIR 3-IN 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
auf Bestellung 4724 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
87+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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RN2401,LXHF docget.jsp?did=18874&prodName=RN2401
RN2401,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
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RN2401,LXHF docget.jsp?did=18874&prodName=RN2401
RN2401,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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RN2403,LXHF docget.jsp?did=18874&prodName=RN2404
RN2403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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RN2403,LXHF docget.jsp?did=18874&prodName=RN2404
RN2403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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RN1416,LXHF docget.jsp?did=18796&prodName=RN1416
RN1416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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RN1416,LXHF docget.jsp?did=18796&prodName=RN1416
RN1416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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RN2407,LXHF RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407
RN2407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.13 EUR
6000+0.11 EUR
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RN2407,LXHF RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407
RN2407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
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RN2417,LXHF RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417
RN2417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.13 EUR
6000+0.11 EUR
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RN2417,LXHF RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417
RN2417,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
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74HC240D description 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC240D
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 2000 Stücke:
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2000+0.6 EUR
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74HC240D description 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC240D
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
23+0.92 EUR
26+0.82 EUR
100+0.71 EUR
250+0.67 EUR
500+0.63 EUR
1000+0.61 EUR
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HN1A01FU-GR,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1A01FU-GR,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
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50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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TLP185(GR-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GR-TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
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TLP185(GR-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GR-TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 18581 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
33+0.65 EUR
100+0.48 EUR
500+0.39 EUR
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TLP715(D4-TP,F) TLP715_9-25-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Produkt ist nicht verfügbar
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TLP715F(D4-TP,F) TLP715F_6-3-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(F) TLP715F_6-3-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715(D4-MBS-TP,F TLP715_9-25-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Produkt ist nicht verfügbar
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TLP715(D4,F) TLP715_9-25-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(TP,F) TLP715F_6-3-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP
Produkt ist nicht verfügbar
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TLP715(TP,F) TLP715_9-25-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP715F(D4,F) TLP715F_6-3-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SDIP Gull Wing
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.6V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2710(D4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
11+2 EUR
Mindestbestellmenge: 8 Stücke
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TLP2710(LF4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
11+2 EUR
125+1.46 EUR
Mindestbestellmenge: 8 Stücke
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TLP2710(D4-LF4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Input Type: DC
Data Rate: 5MBd
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 11ns, 13ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.73 EUR
11+1.93 EUR
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SSM6K341NU,LF docget.jsp?did=56020&prodName=SSM6K341NU
SSM6K341NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM6K341NU,LF docget.jsp?did=56020&prodName=SSM6K341NU
SSM6K341NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.45 EUR
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CSLZ6V2,L3F docget.jsp?did=142902&prodName=CSLZ6V2
CSLZ6V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ6V2,L3F docget.jsp?did=142902&prodName=CSLZ6V2
CSLZ6V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
auf Bestellung 9284 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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CSLZ6V8,L3F docget.jsp?did=142902&prodName=CSLZ6V8
CSLZ6V8,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ6V8,L3F docget.jsp?did=142902&prodName=CSLZ6V8
CSLZ6V8,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ30V,L3F docget.jsp?did=142902&prodName=CSLZ30V
CSLZ30V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 51VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ30V,L3F docget.jsp?did=142902&prodName=CSLZ30V
CSLZ30V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 51VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
auf Bestellung 8192 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
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CSLZ20V,L3F docget.jsp?did=142902&prodName=CSLZ20V
CSLZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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CSLZ20V,L3F docget.jsp?did=142902&prodName=CSLZ20V
CSLZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 7387 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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CSLZ16V,L3F docget.jsp?did=142902&prodName=CSLZ16V
CSLZ16V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ16V,L3F docget.jsp?did=142902&prodName=CSLZ16V
CSLZ16V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ10V,L3F docget.jsp?did=142902&prodName=CSLZ10V
CSLZ10V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ10V,L3F docget.jsp?did=142902&prodName=CSLZ10V
CSLZ10V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 9190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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CSLZ12V,L3F docget.jsp?did=142902&prodName=CSLZ12V
CSLZ12V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 28VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ12V,L3F docget.jsp?did=142902&prodName=CSLZ12V
CSLZ12V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 28VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ8V2,L3F docget.jsp?did=142902&prodName=CSLZ8V2
CSLZ8V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
Produkt ist nicht verfügbar
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CSLZ8V2,L3F docget.jsp?did=142902&prodName=CSLZ8V2
CSLZ8V2,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
auf Bestellung 9864 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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2SD2257(CANO,Q,M) 2SD2257_2006-11-21.pdf
2SD2257(CANO,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,NIKKIQ(J 2SD2257_2006-11-21.pdf
2SD2257,NIKKIQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257(Q,M) 2SD2257_2006-11-21.pdf
2SD2257(Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Produkt ist nicht verfügbar
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2SD2257(CANO,A,Q) 2SD2257_2006-11-21.pdf
2SD2257(CANO,A,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,Q(J 2SD2257_2006-11-21.pdf
2SD2257,Q(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SD2257,KEHINQ(J 2SD2257_2006-11-21.pdf
2SD2257,KEHINQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Operating Temperature: 150°C (TJ)
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Produkt ist nicht verfügbar
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74HC541D 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D
74HC541D
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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